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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Reduced electron temperature in a magnetized inductively-coupled plasma with internal coil

The effect of magnetic filtering on the electron energy distribution function is studied in an inductive discharge with internal coil coupling. The coil is placed inside the plasma and driven by a low-frequency power supply (5.8 MHz) which leads to a very high power transfer efficiency. A permanent dipole magnet may be placed inside the internal coil to produce a static magnetic field around 100 Gauss. The coil and the matching system are designed to minimize the capacitive coupling to the plasma. Capacitive coupling is quantified by measuring the radiofrequency (rf) plasma potential with a capacitive probe. Without the permanent magnet, the rf plasma potential is significantly smaller than the electron temperature. When the magnet is present, the rf plasma potential increases. The electron energy distribution function is measured as a function of space with and without the permanent magnet. When the magnet is present, electrons are cooled down to low temperature in the downstream region. This region of low electron temperature may be useful for plasma processing applications, as well as for efficient negative ion production.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

The dependence of potential well formation on the magnetic field strength and electron injection current in a polywell device

A capacitive probe has been used to measure the plasma potential in a polywell device in order to observe the dependence of potential well formation on magnetic field strength, electron injection current, and polywell voltage bias. The effectiveness of the capacitive probe in a high energy electron plasma was determined by measuring the plasma potential of a planar diode with an axial magnetic field. The capacitive probe was translated along the axis of one of the field coils of the polywell, and the spatial profile of the potential well was measured. The confinement time of electrons in the polywell was estimated with a simple analytical model which used the experimentally observed potential well depths, as well as a simulation of the electron trajectories using particle orbit theory.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Solvothermal synthesis of NiAl double hydroxide microspheres on a nickel foam-graphene as an electrode material for pseudo-capacitors

In this paper, we demonstrate excellent pseudo-capacitance behavior of nickel-aluminum double hydroxide microspheres (NiAl DHM) synthesized by a facile solvothermal technique using tertbutanol as a structure-directing agent on nickel foam-graphene (NF-G) current collector as compared to use of nickel foam current collector alone. The structure and surface morphology were studied by X-ray diffraction analysis, Raman spectroscopy and scanning and transmission electron microscopies respectively. NF-G current collector was fabricated by chemical vapor deposition followed by an ex situ coating method of NiAl DHM active material which forms a composite electrode. The pseudocapacitive performance of the composite electrode was investigated by cyclic voltammetry, constant charge–discharge and electrochemical impedance spectroscopy measurements. The composite electrode with the NF-G current collector exhibits an enhanced electrochemical performance due to the presence of the conductive graphene layer on the nickel foam and gives a specific capacitance of 1252 F g{sup −1} at a current density of 1 A g{sup −1} and a capacitive retention of about 97% after 1000 charge–discharge cycles. This shows that these composites are promising electrode materials for energy storage devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermal-to-electric energy conversion using ferroelectric film capacitors

The capacitive ferroelectric thermoelectric converter harvesting electrical energy through non-linear capacitance variation caused by changes in temperature is analyzed. The ferroelectric material used was the thin (0.5 μm) Ba{sub 0.3}Sr{sub 0.7}TiO{sub 3} film. On the basis of experimental dependencies of the ferroelectric film permittivity on temperature ranging from 100 K to 350 K under different electric fields up to 80 V/μm, the optimum values of operating temperatures and electric field for the energy harvesting optimization were determined. For the temperature oscillations of ±15 K around room temperature and electric field about 40 V/μm, the harvested energy was estimated as 30 mJ/cm{sup 3}. It is shown that the use of thin ferroelectric films for rapid capacitance variation versus temperature and microelectromechanical systems for fast temperature modulations may be a relevant solution for creation of small power scale generators for portable electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Relationship between the discharge mode and the spatial oxygen plasma distribution in a large size ferrite inductively coupled plasmas

The electrical characteristics and the spatial distribution of oxygen plasma according to the number of turns in ferrite inductively coupled plasmas (ferrite ICPs) are investigated. Through a new ICP model, which includes the capacitive coupling and the power loss of the ferrite material with the conventional ICP model, the variation of the oxygen discharge characteristics depending on the number of turns is simply understood by the electrical measurement, such as the antenna voltages and the currents. As the number of the turns increases, the capacitive coupling dominantly affects the spatial plasma distribution. This capacitive coupling results in a center focused density profile along the radial direction. In spite of the same discharge conditions (discharge chamber, neutral gas, and pressure), the spatial plasma distribution over 450 mm has drastic changes by increasing number of the turns. In addition, the effect of the negative species to the density profile is compared with the argon discharge characteristics at the same discharge configuration.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Equivalent circuit effects on mode transitions in H{sub 2} inductively coupled plasmas

It is well known experimentally that the circuit matching network plays an important role in the mode transition behavior of inductively coupled plasmas. To date, however, there have been no reports of numerical models being used to study the role of the matching circuit in the transition process. In this paper, a new two-dimensional self-consistent fluid model that couples the components of an equivalent circuit module is developed to investigate the effects of the equivalent circuit on the mode transition characteristics of an inductively coupled, hydrogen plasma. The equivalent circuit consists of a current source, impedance matching network, reactor impedance, and plasma transferred impedance. The nonlinear coupling of the external circuit with the internal plasma is investigated by adjusting the matching capacitance at a fixed input current. The electron density and temperature as well as the electromagnetic fields all change suddenly, and the E to H mode transition occurs abruptly at a certain matching capacitance as the impedance matching of the external circuit is varied. We also analyze the fields and the plasma characteristics during the transition process, especially for the case of the capacitive E mode.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

All-solid-state supercapacitors from natural lignin-based composite film by laser direct writing

Lignin as a renewable natural resource has been the aim of numerical interest in applications ranging from pitch to porous carbon material. In this work, a facile method is reported to transform lignin into porous conductive carbon structures and interdigitated circuits for supercapacitor devices using femtosecond laser direct writing. Comparative studies revealed that the laser irradiation induced tetrahedral amorphous carbon while only graphitic carbon was obtained through pyrolysis. At the same time, the composite membrane was easily prepared to further optimize the capacities by mixing functional materials (MoS 2 ) into the lignin/polyacrylonitrile (PAN) composite polymers. A MoS2 decorated porous carbon network material could be fabricated through focused femtosecond pulsed laser irradiation of the corresponding composite membranes. The microstructure and spectroscopic features of these laser induced hybrid carbon materials have been deeply investigated. The supercapacitor based on lignin/PAN has high areal specific capacitances of 6.7 mF cm –2 (0.9 F cm –3 ) at 10 mV s –1 . Moreover, doped microsupercapacitors with MoS2 demonstrated enhanced areal capacitances up to 16 mF cm –2 (2.2 F cm –3 ) and at 10 mV s –1 , respectively. The relatively high areal capacitances indicate that the introduced method is potential for innovative manufacturing energy storage devices based on natural lignin.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Strong-coupling quantum dot microscope

Here, we report the development and fabrication of a novel cryogenic instrument, a scanning quantum dot microscope (SQDM), capable of positioning a quantum dot to within tunneling range of a sample surface. The microscope is strong-coupling in the sense that electron wavefunctions in the quantum dot can directly overlap with electron wavefunctions in the sample, in contrast to probes based on electric-field coupling. The SQDM consists of a sharp glass probe with two asymmetric electrodes leading to an aluminum quantum dot at the apex. One electrode is capacitively coupled to the quantum dot, while the other lead is connected to the dot via a tunneling junction. A charge sensing circuit constructed from a high-electron-mobility transistor is attached to the capacitance lead to measure the charge state of the dot. The last key feature of the design is a tilted-apex geometry. This design feature, in conjunction with the capacitive sensing scheme, results in a robust quantum-dot probe capable of operating within angstrom distances of the sample surface while protecting the single tunnel junction responsible for electron transport onto the quantum dot. We demonstrate that our instrument can detect single-electron tunneling events and can also be operated as a standard scanning tunneling microscope capable of nanometer-scale resolution of the surface topography.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗
DOE OSTI2016

Can ionophobic nanopores enhance the energy storage capacity of electric-double-layer capacitors containing nonaqueous electrolytes?

The ionophobicity effect of nanoporous electrodes on the capacitance and the energy storage capacity of nonaqueous-electrolyte supercapacitors is studied by means of the classical density functional theory (DFT). It has been hypothesized that ionophobic nanopores may create obstacles in charging, but they store energy much more efficiently than ionophilic pores. In this paper, we find that, for both ionic liquids and organic electrolytes, an ionophobic pore exhibits a charging behavior different from that of an ionophilic pore, and that the capacitance–voltage curve changes from a bell shape to a two-hump camel shape when the pore ionophobicity increases. For electric-double-layer capacitors containing organic electrolytes, an increase in the ionophobicity of the nanopores leads to a higher capacity for energy storage. Without taking into account the effects of background screening, the DFT predicts that an ionophobic pore containing an ionic liquid does not enhance the supercapacitor performance within the practical voltage ranges. However, by using an effective dielectric constant to account for ion polarizability, the DFT predicts that, like an organic electrolyte, an ionophobic pore with an ionic liquid is also able to increase the energy stored when the electrode voltage is beyond a certain value. We find that the critical voltage for an enhanced capacitance in an ionic liquid is larger than that in an organic electrolyte. Finally, our theoretical predictions provide further understanding of how chemical modification of porous electrodes affects the performance of supercapacitors.

25 ENERGY STORAGE↗
DOE OSTI2024

Transport signatures of phase fluctuations in superconducting qubits

Abstract Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current–voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.

Wisne, M. (ORCID:0009000610684209)↗
DOE OSTI2020

Merged-Element Transmon

Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb–amorphous-Si–Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state-dependent shift in the low-power regime. The device also demonstrates the single-photon and multiphoton transitions that represent a weakly anharmonic system in two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. Here, a participation-ratio analysis identifies the dielectric loss of the amorphous-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence for relatively small device dimensions when implemented with a low-loss, epitaxially grown, and lattice-matched trilayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗
DOE OSTI2014

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.

Ericson, N↗
DOE OSTI2014

Datasheet Driven Silicon Carbide Power MOSFET Model

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees C to 225 degrees C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

Mudholkar, M↗
DOE OSTI2017

Ultrafast Reverse Recovery Time Measurement for Wide-Bandgap Diodes

A system is presented that is capable of measuring sub-nanosecond reverse recovery times of diodes in wide-bandgap materials over a wide range of forward biases (0 – 1 A) and reverse voltages (0 – 10 kV). The system utilizes the step recovery technique and comprises a cable pulser based on a silicon (Si) Photoconductive Semiconductor Switch (PCSS) triggered with an Ultra Short Pulse Laser (USPL), a pulse charging circuit, a diode biasing circuit, and resistive and capacitive voltage monitors. The PCSS based cable pulser transmits a 130 ps rise time pulse down a transmission line to a capacitively coupled diode, which acts as the terminating element of the transmission line. The temporal nature of the pulse reflected by the diode provides the reverse recovery characteristics of the diode, measured with a high bandwidth capacitive probe integrated into the cable pulser. Furthermore, this system was used to measure the reverse recovery times (including the creation and charging of the depletion region) for two Avogy gallium nitride (GaN) diodes; the initial reverse recovery time was found to be 4 ns and varied minimally over reverse biases of 50 – 100 V and forward current of 1 – 100 mA.

30 DIRECT ENERGY CONVERSION↗