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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,171 records · Page 65
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Effect of disorder on the charge-carrier dynamics in {kappa}-(D{<_8}-ET){<_2}Cu[N(CN){<_2}]Br.

We have applied resistance fluctuation spectroscopy to study the intrinsic low-frequency dynamics of the charge carriers in the system {kappa}-(D{sub 8}-ET){sub 2}Cu[N(CN){sub 2}]Br for two different cooling rates. A strong increase of both the resistance and the noise level is observed below the thermodynamic glass-transition temperature T{sub g}. Surprisingly, the data of the normalized spectral weight <({delta}R){sup 2}>/R{sup 2} fall on top of each other for both cooling rates except for temperatures near the Mott critical point (T{sub 0} {approx_equal} 35 K) and below 28 K. The suppression of the peak in <({delta}R){sup 2}>/R{sup 2} associated with the Mott transition suggests that disorder is an additional parameter in the generalized phase diagram. The enhanced noise level below 28 K might be explained by a disorder-induced staggered magnetic moment in the metallic state close to the antiferromagnetic Mott insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

Doping dependence of the magnetic excitations in La 2 - x Sr x CuO 4

The magnetic correlations within the cuprates have undergone intense scrutiny as part of efforts to understand high-temperature superconductivity. We explore the evolution of the magnetic correlations along the nodal direction of the Brillouin zone in La 2–x Sr x CuO 4 , spanning the doping phase diagram from the antiferromagnetic Mott insulator at x = 0 to the metallic phase at x = 0.26. Magnetic excitations along this direction are found to be systematically softened and broadened with doping, at a higher rate than the excitations along the antinodal direction. This phenomenology is discussed in terms of the nature of the magnetism in the doped cuprates. As a result, survival of the high-energy magnetic excitations, even in the overdoped regime, indicates that these excitations are marginal to pairing, while the influence of the low-energy excitations remains ambiguous.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Modeling Unconventional Superconductivity at the Crossover between Strong and Weak Electronic Interactions

High-temperature superconductivity emerges in many different quantum materials, often in regions of the phase diagram where the electronic kinetic energy is comparable to the electron-electron repulsion. Describing such intermediate-coupling regimes has proven challenging as standard perturbative approaches are inapplicable. In this study, we employ quantum Monte Carlo methods to solve a multiband Hubbard model that does not suffer from the sign problem and in which only repulsive interband interactions are present. In contrast to previous sign-problem-free studies, we treat magnetic, superconducting, and charge degrees of freedom on an equal footing. We find an antiferromagnetic dome accompanied by a metal-to-insulator crossover line in the intermediate-coupling regime, with a smaller superconducting dome appearing in the metallic region. Across the antiferromagnetic dome, the magnetic fluctuations change from overdamped in the metallic region to propagating in the insulating region. Our findings shed new light on the intertwining between superconductivity, magnetism, and charge correlations in quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A hybrid magnetic/complementary metal oxide semiconductor three-context memory bit cell for non-volatile circuit design

After decades of continued scaling to the beat of Moore's law, it now appears that conventional silicon based devices are approaching their physical limits. In today's deep-submicron nodes, a number of short-channel and quantum effects are emerging that affect the manufacturing process, as well as, the functionality of the microelectronic systems-on-chip. Spintronics devices that exploit both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, are promising solutions to circumvent these scaling threats. Being compatible with the CMOS technology, such devices offer a promising synergy of radiation immunity, infinite endurance, non-volatility, increased density, etc. In this paper, we present a hybrid (magnetic/CMOS) cell that is able to store and process data both electrically and magnetically. The cell is based on perpendicular spin-transfer torque magnetic tunnel junctions (STT-MTJs) and is suitable for use in magnetic random access memories and reprogrammable computing (non-volatile registers, processor cache memories, magnetic field-programmable gate arrays, etc). To demonstrate the potential our hybrid cell, we physically implemented a small hybrid memory block using 45 nm × 45 nm round MTJs for the magnetic part and 28 nm fully depleted silicon on insulator (FD-SOI) technology for the CMOS part. We also report the cells measured performances in terms of area, robustness, read/write speed and energy consumption.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Overhauser effects in insulating solids

We report magic angle spinning, dynamic nuclear polarization (DNP) experiments at magnetic fields of 9.4 T, 14.1 T, and 18.8 T using the narrow line polarizing agents 1,3-bisdiphenylene-2-phenylallyl (BDPA) dispersed in polystyrene, and sulfonated-BDPA (SA-BDPA) and trityl OX063 in glassy glycerol/water matrices. The {sup 1}H DNP enhancement field profiles of the BDPA radicals exhibit a significant DNP Overhauser effect (OE) as well as a solid effect (SE) despite the fact that these samples are insulating solids. In contrast, trityl exhibits only a SE enhancement. Data suggest that the appearance of the OE is due to rather strong electron-nuclear hyperfine couplings present in BDPA and SA-BDPA, which are absent in trityl and perdeuterated BDPA (d{sub 21}-BDPA). In addition, and in contrast to other DNP mechanisms such as the solid effect or cross effect, the experimental data suggest that the OE in non-conducting solids scales favorably with magnetic field, increasing in magnitude in going from 5 T, to 9.4 T, to 14.1 T, and to 18.8 T. Simulations using a model two spin system consisting of an electron hyperfine coupled to a {sup 1}H reproduce the essential features of the field profiles and indicate that the OE in these samples originates from the zero and double quantum cross relaxation induced by fluctuating hyperfine interactions between the intramolecular delocalized unpaired electrons and their neighboring nuclei, and that the size of these hyperfine couplings is crucial to the magnitude of the enhancements. Microwave power dependent studies show that the OE saturates at considerably lower power levels than the solid effect in the same samples. Our results provide new insights into the mechanism of the Overhauser effect, and also provide a new approach to perform DNP experiments in chemical, biophysical, and physical systems at high magnetic fields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Interface-induced magnetic polar metal phase in complex oxides

Abstract Polar metals are commonly defined as metals with polar structural distortions. Strict symmetry restrictions make them an extremely rare breed as the structural constraints favor insulating over metallic phase. Moreover, no polar metals are known to be magnetic. Here we report on the realization of a magnetic polar metal phase in a BaTiO 3 /SrRuO 3 /BaTiO 3 heterostructure. Electron microscopy reveals polar lattice distortions in three-unit-cells thick SrRuO 3 between BaTiO 3 layers. Electrical transport and magnetization measurements reveal that this heterostructure possesses a metallic phase with high conductivity and ferromagnetic ordering with high saturation moment. The high conductivity in the SrRuO 3 layer can be attributed to the effect of electrostatic carrier accumulation induced by the BaTiO 3 layers. Density-functional-theory calculations provide insights into the origin of the observed properties of the thin SrRuO 3 film. The present results pave a way to design materials with desired functionalities at oxide interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Picosecond volume expansion drives a later-time insulator–metal transition in a nano-textured Mott insulator

There is significant technological interest in developing ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of both electrons and associated phonons, which is possible with short-pulse photoexcitation. However, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical timescales dominated by slowly coarsening dynamics. Here, in this study, we use time-resolved X-ray diffraction and reflectivity measurements to show that the photoinduced insulator-to-metal transition in an epitaxially strained Mott insulating thin film occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, which is followed by a slower electronic evolution into a metastable nonequilibrium state. Microscopic model calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics explain the threshold behaviour and elucidate the delayed onset of the electronic phase transition. This work highlights the importance of combined electronic and structural studies in unravelling the physics of dynamic transitions and the timescales of photoinduced processes. During a photoinduced phase transition, electronic rearrangements are usually faster than lattice ones. Time-resolved measurements now show that the insulator-to-metal transition in a thin-film Mott insulator is preceded by lattice reconfiguration.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetic Field Penetration Technique to Study High Field Shielding of Multilayered Superconductors

The SIS structure which consists of alternative thin layers of superconductors and insulators on a bulk niobium has been proposed to shield niobium cavity surface from high magnetic field and hence increase the accelerating gradient. The study of the behavior of multilayer super-conductors in an external magnetic field is essential to optimize their SRF performance. In this work we report the development of a simple and efficient technique to measure penetration of magnetic field into bulk, thin film and multilayer superconductors. Experimental setup contains a small superconducting solenoid which can produce a parallel surface magnetic field up to 0.5 T and Hall probes to detect penetrated magnetic field across the superconducting sample. This system was calibrated and used to study the effect of niobium sample thickness on the field of full magnetic flux penetration. We determined the optimum thickness of the niobium substrate to fabricate the multilayer structure for the measurements in our setup. This technique was used to measure penetration fields of Nb₃Sn thin films and Nb₃Sn/Al₂O₃ multi-layers deposited on Al₂O₃ wafers.

Senevirathne, I. H.↗
DOE OSTI2026

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Resolving sub-10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy-dissipation limits of spin-electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy (cm-THz-sSNOM) to resolve the near-field THz spectroscopic evolution of the magnetic field-driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic-field-induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near-field model reveals a multi-scale transition initiated by 1–2 nm isolated spin-flip sites at low magnetic fields, which coalesce into ∼15 nm conducting regions as the threshold field is approached. These results provide an nano-THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

Haeuser, Samuel [Iowa State University, Ames, IA (↗
DOE OSTI2014

Proposal for a phase-coherent thermoelectric transistor

Identifying materials and devices which offer efficient thermoelectric effects at low temperature is a major obstacle for the development of thermal management strategies for low-temperature electronic systems. Superconductors cannot offer a solution since their near perfect electron-hole symmetry leads to a negligible thermoelectric response; however, here we demonstrate theoretically a superconducting thermoelectric transistor which offers unparalleled figures of merit of up to ∼45 and Seebeck coefficients as large as a few mV/K at sub-Kelvin temperatures. The device is also phase-tunable meaning its thermoelectric response for power generation can be precisely controlled with a small magnetic field. Our concept is based on a superconductor-normal metal-superconductor interferometer in which the normal metal weak-link is tunnel coupled to a ferromagnetic insulator and a Zeeman split superconductor. Upon application of an external magnetic flux, the interferometer enables phase-coherent manipulation of thermoelectric properties whilst offering efficiencies which approach the Carnot limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Interfacial Exchange Phenomena Driven by Ferromagnetic Domains

Abstract Interfacial proximity effects in antiferromagnetic/ferromagnetic (AFM/FM) bilayers control the exchange‐bias (EB) phenomena exploited in most spintronic devices, although still is lack of full understanding. Discordant results, including different exchange‐bias field ( H E ), coercivity ( H C ), or blocking temperature ( T B ) found even in similar systems, are usually ascribed to uncontrolled parameters, namely dissimilar interfacial defects, structure, and thicknesses. Here, it is shown in the very same sample that the magnetic domain structure during the magnetization reversal of the FM layer controls those mentioned effects. Simultaneous transport and vectorial‐resolved magnetic measurements performed in a V 2 O 3 /Co system during warming after different field cooling (FC) procedures exhibit a strong dependence on the FC angle and the domain structure of the FM layer. Remarkably, magnetization reversal analysis reveals 35 K of variation in T B and up to a factor of two in H E . These observations can be explained within the random‐field model for the interfacial exchange coupling with a fixed AFM domain structure in contact with a variable (angle‐dependent) FM domain structure. The results highlight the importance of the domain structure and magnetization reversal of the FM layer (not previously considered) in the EB phenomena, with potential to tailor interfacial effects in future spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermodynamics of energy magnetization

We construct the thermodynamics of energy magnetization in the presence of gravitomagnetic field. We show that the free energy must be modified to account for the modification of the energy current operator in the presence of a confining potential. The explicit expression of the energy magnetization is derived for a periodic system, and the Streda formula for the thermal Hall conductivity is rigorously established. Furthermore, we demonstrate our theory of the energy magnetization and the Streda formula in a Chern insulator.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Direct evidence of ferromagnetism in MnSb 2 Te 4

We report the magnetic imaging of ferromagnetic domains in the van der Waals single crystal MnSb 2 Te 4 from two different sources using cryogenic magnetic force microscopy. The magnetic field dependence of the domains reveals very weak pinning of domain walls in MnSb 2 Te 4 , resulting in a negligibly small magnetic hysteresis loop. Furthermore, the temperature dependence of the domain contrast reveals a mean field like behavior, in good agreement with that of bulk magnetization measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnetization reversal driven by electron localization-delocalization crossover in the inverse spinel Co 2 VO 4

Neutron diffraction, magnetization, and muon spin relaxation measurements, supplemented by density functional theory (DFT) calculations are employed to unravel temperature-driven magnetization reversal in inverse spinel Co 2 VO 4 . All measurements show a second-order magnetic phase transition at T C = 168 K to a collinear ferrimagnetic phase. Neutron diffraction measurements reveal two antiparallel ferromagnetic (FM) sublattices, belonging to magnetic ions on two distinct crystal lattice sites, where the relative balance between the two sublattices determine the net FM moment in the unit cell. As the evolution of the ordered moment with temperature differs between the two sublattices, the net magnetic moment reaches a maximum at T NC = 138 K and reverses its sign at T MR = 65 K. The DFT results suggest that the underlying microscopic mechanism for the reversal is a delocalization of the unfilled 3d -shell electrons on one sublattice just below T C , followed by a gradual localization as the temperature is lowered. Furthermore, this delocalized-localized crossover is supported by muon spectroscopy results, as strong T 1 relaxation observed below T C indicates fluctuating internal fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Single pair of Weyl fermions in the half-metallic semimetal EuC d 2 A s 2 [A Single Pair of Weyl Fermions in Half-metallic EuCd 2 As 2 Semimetal]

Materials with the ideal case of a single pair of Weyl points (WPs) are highly desirable for elucidating the unique properties of Weyl fermions. EuCd 2 As 2 is an antiferromagnetic topological insulator or Dirac semimetal depending on the different magnetic configurations. Using first-principles band-structure calculations, we show that inducing ferromagnetism in EuCd 2 As 2 can generate a single pair of WPs from splitting the single pair of antiferromagnetic Dirac points due to its half-metallic nature. Analysis with a low-energy effective Hamiltonian shows that a single pair of WPs is obtained in EuCd 2 As 2 because the Dirac points are very close to the zone center and the ferromagnetic exchange splitting is large enough to push one pair of WPs to merge and annihilate at Γ while the other pair survives. As a result, we predict that alloying with Ba at the Eu site can stabilize the ferromagnetic configuration and generate a single pair of Weyl points without application of a magnetic field.

36 MATERIALS SCIENCE↗