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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,171 records · Page 65

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NASA NTRS1979

High density circuit technology

Polyimide dielectric materials were acquired for comparative and evaluative studies in double layer metal processes. Preliminary experiments were performed. Also, the literature indicates that sputtered aluminum films may be successfully patterned using the left-off technique provided the substrate temperature remains low and the argon pressure in the chamber is relatively high at the time of sputtering. Vendors associated with dry processing equipment are identified. A literature search relative to future trends in VLSI fabrication techniques is described.

Wade, T. E.↗

NASA NTRS1981

Forming electrical interconnections through semiconductor wafers

An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.

Anthony, T. R.↗

NASA NTRS1981

Investigation of semiconductor clad optical waveguides

The properties of semiconductor-clad optical waveguides based on glass substrates were investigated. Computer modeling studies on four-layer silicon-clad planar dielectric waveguides indicated that the attenuation and mode index should behave as exponentially damped sinusoids as the silicon thickness is decreased below one micrometer. This effect can be explained as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high refractive index silicon. The computer studies also show that both the attenuation and mode index of the propagating mode are significantly altered by conductivity charges in the silicon. Silicon claddings were RF sputtered onto AgNO3-NaNO3 ion exchanged waveguides and preliminary measurements of attenuation were made. An expression was developed which predicts the attenuation of the silicon clad waveguide from the attenuation and phase characteristics of a silicon waveguide. Several applications of these clad waveguides are suggested and methods for increasing the photo response of the RF sputtered silicon films are described.

Batchman, T. E.↗

NASA NTRS1982

Ion beam microtexturing and enhanced surface diffusion

Ion beam interactions with solid surfaces are discussed with particular emphasis on microtexturing induced by the deliberate deposition of controllable amounts of an impurity material onto a solid surface while simultaneously sputtering the surface with an ion beam. Experimental study of the optical properties of microtextured surfaces is described. Measurements of both absorptance as a function of wavelength and emissivity are presented. A computer code is described that models the sputtering and ion reflection processes involved in microtexture formation.

Robinson, R. S.↗

NASA NTRS1982

Surface diffusion activation energy determination using ion beam microtexturing

The activation energy for impurity atom (adatom) surface diffusion can be determined from the temperature dependence of the spacing of sputter cones. These cones are formed on the surface during sputtering while simultaneously adding impurities. The impurities form clusters by means of surface diffusion, and these clusters in turn initiate cone formation. Values are given for the surface diffusion activation energies for various materials on polycrystalline Cu, Al, Pb, Au, and Ni. The values for different impurity species on each of these substrates are approximately independent of impurity species within the experimental uncertainty, suggesting the absence of strong chemical bonding effects on the diffusion.

Rossnagel, S. M.↗

NASA NTRS1980

Ion microprobe analysis and petrogenetic interpretations of Li, Mg, Ti, K, Sr, Ba in lunar plagioclase

The ion microprobe employed in the considered investigation utilizes a focused primary ion beam to sputter a tiny volume of a sample. A small fraction of the sputtered atoms is ionized and extracted from the sample region for subsequent analysis with a mass spectrometer. A systematic study was conducted to determine which elements can be detected and analyzed in lunar Ca-rich plagioclase. Attention is given to the method of quantitative determination, the selected samples, and aspects of data presentation. A number of general conclusions are discussed. All minor elements in plagioclases from anorthosites from several lunar sites show a restricted range consistent with a common origin. The simplest interpretation is that the anorthosites developed from a moon-wide event, or at least from closely-related events. A moon-wide magma ocean would satisfy this condition.

Steele, I. M.↗

NASA NTRS1982

Erosion of frozen sulfur dioxide by ion bombardment - Applications to Io

The erosion of frozen SO2 due to bombardment by both light and heavy ions (He and F) was measured for bombarding energies of 0.08 to 1.3 MeV/amu. The number of SO2 molecules ejected from the target per incident ion (i.e., the sputtering yield) was 50 for 1.5 MeV He ions and 7300 for 6 MeV F ions. Ion bombardment followed by heating produced an oxygen/sulfur residue which was much more stable against subsequent ion bombardment than the initial frozen SO2. The erosion rate of SO2 frost on Jupiter's moon Io depends strongly on the elemental composition and energy spectra of the magnetospheric ion flux which bombards the surface. The combined effects of ion bombardment and heating which produced residues on the target substrates may also occur on Io from magnetospheric ion bombardment and heating by volcanism. The experimental results compare favorably with a new model of the sputtering process which considers the energy loss of the incident ion to electronic excitation in the target.

Melcher, C. L.↗

NASA NTRS1982

Plasma deposition and surface modification techniques for wear resistance

The ion-assisted or plasma coating technology is discussed as it applies to the deposition of hard, wear resistant refractory compound films. Of the many sputtering and ion plating modes and configurations the reactive magnetron sputtering and the reactive triode ion plating techniques are the preferred ones to deposit wear resistant coatings for tribological applications. Both of these techniques incorporate additional means to enhance the ionization efficiency and chemical reaction to precision tailor desirable tribological characteristics. Interrelationships between film formation, structure, and ribological properties are strictly controlled by the deposition parameters and the substrate condition. The enhanced ionization contributes to the excellent adherence and coherence, reduced internal stresses and improved structural growth to form dense, cohesive, equiaxed grain structure for improved wear resistance and control.

Spalvins, T.↗

NASA NTRS1982

On charge exchange and knock-on processes in the exosphere of Io

One direct consequence of magnetospheric interaction of Io is the strong dynamical coupling of its neutral atmosphere with the corotating plasma. The absorption of the thermal ions and the associated neutral injection is an improtant issue not yet explored. As far as nonthermal escape of the neutral atmosphere is concerned, three processes stand out. That is, apart from sputtering, exospheric interactions like atom-ion knock-on collision and charge exchange recombination could be a significant source of the neutral clouds in the Jovian system. Using a current electrodynamic model of Io, both the absorption rate of the corotating thermal plasma and the production rates of new exospheric ions and the fast neutrals are considered. It is found that the source strength of the neutral atoms and molecules with speeds of about 100 km/sec could amount to 10 to the 26th/sec whereas exospheric neutrals emitted at lower speed (of about 10 km/sec) amounts to 4 x 10 to the 25th/sec. The generation of the new ions in connection with the streaming of the magnetospheric plasma around Io could also produce an asymmetric sputtering with a neutral flux of about 10 to the 27th/sec emitted from the region of Io which faces Jupiter. These results may be related to a number of sodium observations.

Ip, W.-H.↗

NASA NTRS1982

The atmospheres of Io and other satellites

Voyager measurements of gaseous SO2 in a hot spot region and of ions of sulfur, oxygen, and SO2(+) in the plasma torus, combined with the groundbased measurements of SO2 frost on the surface, indicate that SO2 is perhaps the dominant constituent of Io's atmosphere. Indeed the ionosphere of Io can be sustained by a pure SO2 atmosphere in thermal equilibrium with the surface. Upper limits on common volatiles H2O, CO2, NH3, and CH4 and exceedingly small, although S2 and Ar may still be present. Photochemistry of SO2 could lead to O2 as the major gas on the night side. Reasonable processes for loss to the torus include thermal escape, sputtering, and sweep-up of ions. The symmetry of the sodium cloud between eastern and western elongation is difficult to reconcile with any substantial, diurnally varying atmosphere. Europa, Ganymede, and Callisto may have oxygen atmospheres resulting from photolysis of water vapor. A pressure of approximately 10 to the -6th microbar is predicted, consistent with the Voyager upper limit for Ganymede. A much higher pressure might be present if the water vapor pressure is increased by a low albedo (Callisto) or sputtering (Europa).

Kumar, S.↗

NASA NTRS1984

Material growth and characterization for solid state devices

During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area.

Stefanakos, E. K.↗

NASA NTRS1984

Grain destruction in interstellar shocks

The destruction of interstellar grains by nonthermal sputtering, thermal sputtering, and grain-grain collisions is discussed. It is concluded that large grains are easily destroyed by shocks in the interstellar medium, but that small grains are much more persistent. Since the MRN model has many more small grains than large ones, this means that the total number of grains is not significantly reduced even when half or more of the grain material is returned to the gas phase. Thus, the small grains are always available as condensation cores for mantle formation or redepletion of refractory grain materials.

Seab, C. G.↗

NASA NTRS1984

Erosion and modification of SO2 ice by ion bombardment of the surface of Io

New measurements on the effect of slow ion bombardment of SO2 ice using Ar(+) in the 15-45 keV range are presented. Total yields for loss of SO2 are given along with the energy spectra of the ejected molecules and molecular fragments and information on the chemical changes induced by the ion bombardment. These data are used to estimate that the direct sputter ejection rate of sulfur into the Jovian plasma is of the order of 10 billion atoms/sq cm/s, that the erosion rate of fresh SO2 deposits due to sputtering is of the order of 0.001 cm/yr, and that a significant and possibly observable column density of SO3 can be produced in an SO2 front only for penetrating ion bombardment. Chemical activity occurs even in rather low-temperature SO2 ice bombardment by ions in the nuclear stopping region, and this activity is likely to increase with increasing temperature.

Johnson, R. E.↗

NASA NTRS1984

Etching of diamond with argon and oxygen ion beams

The angular dependences of the sputter yield of (100) single crystal diamond under argon and oxygen ion beams were investigated. For argon ion beams a large increase in the sputter yield was observed as the angle of incidence was increased from the normal, with a maximum occurring at approximately 60 deg from the normal. The magnitude of the increase and the angle at which the maximum was observed were dependent on the ion energy and species. The shape of the yield versus angle of incidence curve indicated the presence of a highly damaged surface layer. Large deviations from this curve were observed where ion incidence was along channeling directions. Studies with oxygen ion beams showed almost no angular dependence for 500 eV ions while at an energy of 1000 eV the angular dependence was similar to that for argon ions. At normal incidence the yield for 500 eV oxygen ions was seven times larger than that for 500 eV argon ions. For 1000 eV oxygen and argon ions the corresponding ratio is only 2.5. Implications for mechanisms of inert and reactive ion etching are discussed. Application of the data to ion beam shaping of diamond tips for ultrahigh pressure research is discussed.

Whetten, T. J.↗

NASA NTRS1985

Bondability of Al-Si thin film in thermosonic gold wire bonding

The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

Nakagawa, K.↗

NASA NTRS1984

Advanced thin film thermocouples

The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.

Kreider, K. G.↗

NASA NTRS1985

Liquid crystal light valve structures

An improved photosensor film and liquid crystal light valves embodying said film is provided. The photosensor film and liquid crystal light valve is characterized by a significant lower image retention time while maintaining acceptable photosensitivity. The photosensor film is produced by sputter depositing CdS onto an ITO substrate in an atmosphere of argon/H2S gas while maintaining the substrate at a temperature in the range of about 130 C to about 200 C and while introducing nitrogen gas into the system to the extent of not more than about 1% of plasma mixture. Following sputter deposition of the CdS, the film is annealed in an inert gas at temperatures ranging from about 300 C to about 425 C.

Koda, N. J.↗

NASA NTRS1986

Ion-Deposited Polished Coatings

Polished, dense, adherent coatings relatively free of imperfections. New process consists of using broad-beam ion source in evacuated chamber to ion-clean rotating surface that allows grazing incidence of ion beam. This sputter cleans off absorbed gases, organic contaminants, and oxides of mirror surface. In addition to cleaning, surface protrusions sputter-etched away. Process particularly adaptable to polishing of various substrates for optical or esthetic purposes.

Banks, B. A.↗