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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Spin-orbital liquids and insulator-metal transitions on the pyrochlore lattice

The two orbital Hubbard model, with the electrons additionally coupled to a complex magnetic background, arises in the pyrochlore molybdates. The background involves local moments Hund's coupled to the electrons, driving double exchange ferromagnetism, and antiferromagnetic (AF) tendency arising from competing superexchange. The key scales include the Hubbard repulsion and the superexchange, both of which can be tuned in these materials. They control the phase transition from a ferromagnetic metal to a spin glass metal and then to a spin glass (Mott) insulator. We provide a comprehensive description of the ground state of this model using an unrestricted Hartree-Fock scheme implemented via a simulated annealing procedure and establish the metal-insulator transition line for varying Hubbard interaction and superexchange. The electrons see an effective disorder, due to orbital frustration, already in the ferromagnetic phase. The disorder is further enhanced by antiferromagnetic coupling and the resulting magnetic disorder. As a result, increasing AF coupling shifts the metal-insulator transition to lower Hubbard interaction and gives it an additional "Anderson" character. In conclusion, we provide detailed results on the magnetic and orbital correlations, the density of states, and the optical conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Adsorption geometry, conformation, and electronic structure of 2H-octaethylporphyrin on Ag(111) and Fe metalation in ultra high vacuum

Due to the growing interest in the ferromagnetic properties of Fe-octaethylporphyrins (Fe-OEP) for applications in spintronics, methods to produce stable Fe-porphyrins with no Cl atoms are highly demanded. Here, we demonstrate the formation of Fe-OEP layers on Ag(111) single crystal by the ultra high vacuum in situ metalation of the free-base 2H-2,3,7,8,12,13,17,18-octaethylporphyrin (2H-OEP) molecules. The metalation proceeds exactly as in the case of 2H-5,10,15,20-tetraphenylporphyrin (2H-TPP) on the same substrate. An extensive surface characterization by means of X-ray photoemission spectroscopy, valence band photoemission, and NEXAFS with synchrotron radiation light provides information on molecular conformation and electronic structure in the monolayer and multilayer cases. We demonstrate that the presence of the ethyl groups affects the tilt of the adsorbed molecules, the conformation of the macrocycle, and the polarization screening in multilayers, but has only a minor effect in the metalation process with respect to 2H-TPP.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electrical control of 2D magnetism in bilayer CrI 3

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction. Owing to their unique magnetic properties, the recently reported two-dimensional magnets provide a new system for studying these features. For instance, a bilayer of chromium triiodide (CrI 3 ) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Here, our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stacking order dependence of inverse spin Hall effect and anomalous Hall effect in spin pumping experiments

The dependence of the measured DC voltage on the non-magnetic material (NM) in NM/CoFeB and CoFeB/NM bilayers is studied under ferromagnetic resonance conditions in a TE{sub 011} resonant cavity. The directional change of the inverse spin Hall effect (ISHE) voltage V{sub ISHE} for the stacking order of the bilayer can separate the pure V{sub ISHE} and the anomalous Hall effect (AHE) voltage V{sub AHE} utilizing the method of addition and subtraction. The Ta and Ti NMs show a broad deviation of the spin Hall angle θ{sub ISH}, which originates from the AHE in accordance with the high resistivity of NMs. However, the Pt and Pd NMs show that the kinds of NMs with low resistivity are consistent with the previously reported θ{sub ISH} values. Therefore, the characteristics that NM should simultaneously satisfy to obtain a reasonable V{sub ISHE} value in bilayer systems are large θ{sub ISH} and low resistivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

A high-temperature ferromagnetic topological insulating phase by proximity coupling

Topological insulators are insulating materials that display conducting surface states protected by time-reversal symmetry 1 , 2 , wherein electron spins are locked to their momentum. This unique property opens up new opportunities for creating next-generation electronic, spintronic and quantum computation devices 3 , 4 , 5 . Introducing ferromagnetic order into a topological insulator system without compromising its distinctive quantum coherent features could lead to the realization of several predicted physical phenomena 6 , 7 . In particular, achieving robust long-range magnetic order at the surface of the topological insulator at specific locations without introducing spin-scattering centres could open up new possibilities for devices. Here we use spin-polarized neutron reflectivity experiments to demonstrate topologically enhanced interface magnetism by coupling a ferromagnetic insulator (EuS) to a topological insulator (Bi 2 Se 3 ) in a bilayer system. This interfacial ferromagnetism persists up to room temperature, even though the ferromagnetic insulator is known to order ferromagnetically only at low temperatures (<17 K). The magnetism induced at the interface resulting from the large spin–orbit interaction and the spin–momentum locking of the topological insulator surface greatly enhances the magnetic ordering (Curie) temperature of this bilayer system. The ferromagnetism extends ~2 nm into the Bi 2 Se 3 from the interface. Owing to the short-range nature of the ferromagnetic exchange interaction, the time-reversal symmetry is broken only near the surface of a topological insulator, while leaving its bulk states unaffected. The topological magneto-electric response originating in such an engineered topological insulator 2 , 8 could allow efficient manipulation of the magnetization dynamics by an electric field, providing an energy-efficient topological control mechanism for future spin-based technologies

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Magnetization dynamics of cobalt grown on graphene

Ferromagnetic resonance (FMR) spin pumping is a rapidly growing field which has demonstrated promising results in a variety of material systems. This technique utilizes the resonant precession of magnetization in a ferromagnet to inject spin into an adjacent non-magnetic material. Spin pumping into graphene is attractive on account of its exceptional spin transport properties. This article reports on FMR characterization of cobalt grown on chemical vapor deposition graphene and examines the validity of linewidth broadening as an indicator of spin pumping. In comparison to cobalt samples without graphene, direct contact cobalt-on-graphene exhibits increased FMR linewidth—an often used signature of spin pumping. Similar results are obtained in Co/MgO/graphene structures, where a 1 nm MgO layer acts as a tunnel barrier. However, magnetometry, magnetic force microscopy, and Kerr microscopy measurements demonstrate increased magnetic disorder in cobalt grown on graphene, perhaps due to changes in the growth process and an increase in defects. This magnetic disorder may account for the observed linewidth enhancement due to effects such as two-magnon scattering or mosaicity. As such, it is not possible to conclude successful spin injection into graphene from FMR linewidth measurements alone.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

X-ray magnetic circular dichroism of ferromagnetic Co{sub 4}N epitaxial films on SrTiO{sub 3}(001) substrates grown by molecular beam epitaxy

5-nm thick Co{sub 4}N layers capped with 3-nm thick Au layers were grown epitaxially on SrTiO{sub 3}(001) substrates by molecular beam epitaxy using solid Co and a radio-frequency NH{sub 3} plasma. Spin and orbital magnetic moments of the Co{sub 4}N layers were estimated using x-ray magnetic circular dichroism (XMCD) measurements at 300 K. The site-averaged Co 3d spin magnetic moment is evaluated to be about 1.4 {mu}{sub B}, which is smaller than that predicted theoretically (1.58 {mu}{sub B}). The element-specific XMCD intensities for the Co L{sub 3} edge and N K edge show that the magnetic moment is induced at the N atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Clear correspondence between magnetoresistance and magnetization of epitaxially grown ordered FeRh thin films

Magnetoresistance and magnetization of the CsCl-type ordered FeRh epitaxial thin films grown on MgO(001) substrates are investigated as a function of temperature and film thickness. All the films show a clear first-order magnetic phase transition from the antiferromagnetic state to the ferromagnetic state at around 380 K. A large negative variation in the field-dependent magnetoresistance of the FeRh thin films, which is accompanied by the field-induced magnetic phase transition, is found to be well scaled with the magnetization squared M{sup 2}. The results indicate that the magnetoresistance primarily arises from spin-dependent scattering through the s-d exchange interactions between conduction electrons and the localized magnetic moments.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films

This work reports on the magnetic properties of Ge{sub 100-x}Mn{sub x} (x=0-24 at. %) films prepared by cosputtering a Ge+Mn target and submitted to cumulative thermal annealing treatments up to 500 deg. C. Both as-deposited and annealed films were investigated by means of compositional analysis, Raman scattering spectroscopy, magnetic force microscopy, superconducting quantum interference device magnetometry, and electrical resistivity measurements. All as-deposited films (either pure or containing Mn) exhibit an amorphous structure, which changes to crystalline as the annealing treatments are performed at increasing temperatures. In fact, the magnetic properties of the present Ge{sub 100-x}Mn{sub x} films are very sensitive to the Mn content and whether their atomic structure is amorphous or crystalline. More specifically: whereas the amorphous Ge{sub 100-x}Mn{sub x} films (with high x) present a characteristic spin glass behavior at low temperature; after crystallization, the films (with moderate Mn contents) are ferromagnetic at room temperature. Moreover, the magnetic behavior of the films scales with their Mn concentration and tends to be more pronounced after crystallization. Finally, the semiconducting behavior of the films, experienced by previous optical studies, was confirmed through electrical measurements, which also indicate the dependence of the resistivity with the atomic composition of the films.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Detection of bottom ferromagnetic electrode oxidation in magnetic tunnel junctions by magnetometry measurements

Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a magnetic tunnel junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier. Since Co rich alloys are commonly used for the FM electrodes in MTJs, overoxidation of the tunnel barrier results in the formation of a CoO antiferromagnetic (AF) interface layer which couples with the bottom FM electrode to form a typical AF/FM exchange bias (EB) system. In this work, surface oxidation of the CoFe and CoFeB bottom electrodes was detected via magnetometry measurements of EB characterizations including the EB field, training effect, uncompensated spin density, and enhanced coercivity. Variations in these parameters were found to be related to the surface oxidation of the bottom electrode, among them the change in coercivity is most sensitive. Annealed samples show evidence for an oxygen migration back to the MgO tunnel barrier by annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Ferromagnetic Cr 4 PtGa 17 : A Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice

Here, we describe the crystal structure and elementary magnetic properties of a previously unreported ternary intermetallic compound, Cr 4 PtGa 17 , which crystallizes in a rhombohedral unit cell in the noncentrosymmetric space group R3m. The crystal structure is closely related to those of XYZ half-Heusler compounds, where X, Y, and Z are reported to be single elements only, occupying three different face-centered-cubic sublattices. The new material, Cr 4 PtGa 17 , can be most straightforwardly illustrated by writing the formula as (PtGa 2 )(Cr 4 Ga 14 )Ga (X = PtGa 2 , Y = Cr 4 Ga 14 , Z = Ga); that is, the X and Y sites are occupied by clusters instead of single elements. The magnetic Cr occupies a breathing pyrochlore lattice. Ferromagnetic ordering is found below T C ~ 61 K, by both neutron diffraction and magnetometer studies, with a small, saturated moment of ~0.25 μ B /Cr observed at 2 K, making Cr 4 PtGa 17 the first ferromagnetically ordered material with a breathing pyrochlore lattice. A magnetoresistance of ~140% was observed at 2 K. DFT calculations suggest that the material has a nearly half-metallic electronic structure. The new material, Cr 4 PtGa 17 , the first realization of both a half-Heusler-type structure and a breathing pyrochlore lattice, might pave a new way to achieve novel types of half-Heusler compounds.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Computationally Driven Two-Dimensional Materials Design: What Is Next?

Two-dimensional (2D) materials offer many key advantages to innovative applications, such as spintronics and quantum information processing. Theoretical computations have accelerated 2D materials design. In this issue of ACS Nano, Kumar et al. report that ferromagnetism can be achieved in functionalized nitride MXene based on first-principles calculations. Their computational results shed light on a potentially vast group of materials for the realization of 2D magnets. In this Perspective, we briefly summarize the promising properties of 2D materials and the role theory has played in predicting these properties. Additionally, we discuss challenges and opportunities to boost the power of computation for the prediction of the 'structure-property-process (synthesizability)' relationship of 2D materials.

2D materials↗
DOE OSTI2011

Structural controlled magnetic anisotropy in Heusler L1{sub 0}-MnGa epitaxial thin films

Ferromagnetic L1{sub 0}-MnGa thin films have been epitaxially grown on GaN, sapphire, and MgO substrates using molecular beam epitaxy. Using diffraction techniques, the epitaxial relationships are determined. It is found that the crystalline orientation of the films differ due to the influence of the substrate. By comparing the magnetic anisotropy to the structural properties, a clear correlation could be established indicating that the in-plane and out-of-plane anisotropy is directly determined by the crystal orientation of the film and could be controlled via selection of the substrates. This result could be helpful in tailoring magnetic anisotropy in thin films for spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Study on the occurrence of spontaneously established perpendicular exchange bias in Co{sub 49}Pt{sub 51}/IrMn bilayers

In this study, perpendicular exchange bias (PEB) effect in the as-grown Co{sub 49}Pt{sub 51}/IrMn bilayers was demonstrated at room temperature using single-layered Co{sub 49}Pt{sub 51} alloy thin film as ferromagnetic (FM) layer. Several unusual features were observed in this system, viz.,: (i) the PEB was spontaneously established without any external magnetic field treatments, (ii) single-shifted loops were obtained rather than double-shifted ones, and (iii) the spontaneous PEB effect was accompanied by a reduction in perpendicular coercivity, H{sub c⊥} from 1024 to 632 Oe. The results of x–ray diffraction revealed the formation of IrMn (111) texture. Training effect studies indicate that the PEB effect is stable in this system with less than 5% variation in PEB value within 15 repetitive scans. Significant reduction in the PEB effect was found for the CoPt/IrMn films either grown or subjected to post-annealing under external magnetic field (H{sub ind}). The thickness dependence of PEB effect with respect to the FM and antiferromagnetic layers were also investigated and a largest PEB value of 533 Oe was obtained for the sample grown with 3-nm thick CoPt and 10-nm thick IrMn layers. The results of present study thus establish an opportunity to realize PEB effect in the absence of external field during fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

The integration of magnetic material with semiconductors has been fertile ground for fundamental science as well as of great practical interest toward the seamless integration of information processing and storage. We create van der Waals heterostructures formed by an ultrathin ferromagnetic semiconductor CrI 3 and a monolayer of WSe 2 . We observe unprecedented control of the spin and valley pseudospin in WSe 2 , where we detect a large magnetic exchange field of nearly 13 T and rapid switching of the WSe 2 valley splitting and polarization via flipping of the CrI 3 magnetization. The WSe2 photoluminescence intensity strongly depends on the relative alignment between photoexcited spins in WSe 2 and the CrI 3 magnetization, because of ultrafast spin-dependent charge hopping across the heterostructure interface. The photoluminescence detection of valley pseudospin provides a simple and sensitive method to probe the intriguing domain dynamics in the ultrathin magnet, as well as the rich spin interactions within the heterostructure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Modulation on Ni{sub 2}MnGa(001) surface

We report periodic modulation on (001) surface of Ni2MnGa ferromagnetic shape memory alloy. For the stoichiometric surface, analysis of the low energy electron diffraction (LEED) spot profiles shows that the modulation is incommensurate. The modulation appears at 200 K, concomitant with the first order structural transition to the martensitic phase.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Modeling of coherent ultrafast magneto-optical experiments: Light-induced molecular mean-field model

We present calculations which aim to describe coherent ultrafast magneto-optical effects observed in time-resolved pump-probe experiments. Our approach is based on a nonlinear semi-classical Drude-Voigt model and is used to interpret experiments performed on nickel ferromagnetic thin film. Within this framework, a phenomenological light-induced coherent molecular mean-field depending on the polarizations of the pump and probe pulses is proposed whose microscopic origin is related to a spin-orbit coupling involving the electron spins of the material sample and the electric field of the laser pulses. Theoretical predictions are compared to available experimental data. The model successfully reproduces the observed experimental trends and gives meaningful insight into the understanding of magneto-optical rotation behavior in the ultrafast regime. Theoretical predictions for further experimental studies are also proposed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

CoFe{sub 2}/Al{sub 2}O{sub 3}/PMNPT multiferroic heterostructures by atomic layer deposition

Multiferroic materials and applications allow electric bias control of magnetism or magnetic bias control of polarization, enabling fast, compact, energy-efficient devices in RF/microwave communication systems such as filters, shifters, and antennas; electronics devices such as inductors and capacitors; and other magnetic material related applications including sensors and memories. In this manuscript, we utilize atomic layer deposition technology to grow magnetic CoFe metallic thin films onto PMNPT, with a ∼110 Oe electric field induced ferromagnetic resonance field shift in the CoFe/Al{sub 2}O{sub 3}/PMNPT multiferroic heterostructure. Our work demonstrates an atomic layer deposition fabricated multiferroic heterostructure with significant tunability and shows that the unique thin film growth mechanism will benefit integrated multiferroic application in near future.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗