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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Implantable digital hearing aid

Hearing aid converts analog output of microphone into digital pulses in about 10 channels of audiofrequencies. Each pulse band could be directly connected to portion of auditory nerve most sensitive to that range.

Kissiah, A. M., Jr.↗
NASA NTRS1977

Effect of surface texture by ion beam sputtering on implant biocompatibility and soft tissue attachment

The objectives in this report were to use the ion beam sputtering technique to produce surface textures on polymers, metals, and ceramics. The morphology of the texture was altered by varying both the width and depth of the square pits which were formed by ion beam erosion. The width of the ribs separating the pits were defined by the mask used to produce the texture. The area of the surface containing pits varies as the width was changed. The biological parameters used to evaluate the biological response to the texture were: (1) fibrous capsule and inflammatory response in subcutaneous soft tissue; (2) strength of the mechanical attachment of the textured surface by the soft tissue; and (3) morphology of the epidermal layer interfacing the textured surface of percutaneous connectors. Because the sputter yield on teflon ribs was approximately an order of magnitude larger than any other material the majority of the measurements presented in the report were obtained with teflon.

Gibbons, D. F.↗
NASA NTRS1980

Evidence for a secular variation in the C-13/C-12 ratio of carbon implanted in lunar soils

A curve of delta(C-13) vs delta(N-15) for lunar soils and breccias shows that the previously recorded 30% change in delta(N-15) is associated with a change in delta(C-13). The correlation represents concurrent changes in the isotope ratios of both elements at their source, and does not result from maturation effects or nonselective sample contamination. A computation of the relative production rates of C-13 and N-15 shows that spallation reactions in the sun could produce the observed ratio of the delta(C-13) to delta (N-15) variations.

Becker, R. H.↗
NASA NTRS1980

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

Woo, D. S.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Ultrasonic and optical evaluation of surgical implant materials and devices. A durability study of pericardial bioprostheses

Laser Doppler Anemometry (LDA) and accelerated fatigue testing were used in an attempt to assess the durability of two cardiac value bioprostheses. The LDA system was used to monitor the function of the cardiac valves over time. This was done through flow characterization in an aortic flow chamber, designed to closely simulate in vivo conditions, both in the near vicinity (sinuses of valsalva region) and also somewhat downstream (aortic region) from the values. The accelerated fatigue tester was operated by opening and closing the valves at a rate of 1300 R.P.M., about 18 x the normal rate. The results from the two test valves indicate a definite change in the flow characteristics downstream from the valve after certain accelerated test intervals. The high velocity cross-sectional flow area seems to increase over time in use, causing a decrease in the peak velocity. The tissue became more flaccid in certain areas, and tears were apparent at about 9.4 million cycles for the Ionescu-Shiley valve and at 24 million cycles for the Carpentier-Edwards valve. The use of Doppler ultrasound as a technique for monitoring the function of bioprostheses over time in vivo is also discussed.

Schuster, P. R.↗
NASA NTRS1982

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The procedure used to generate MEBES masks and produce test wafers from the 10X Mann 1600 Pattern Generator Tape using existing CAD utility programs and the MEBES machine in the RCA Solid State Technology Center are described. The test vehicle used is the MSFC-designed SC102 Solar House Timing Circuit. When transforming the Mann 1600 tapes into MEBES tapes, extreme care is required in order to obtain accurate minimum linewidths when working with two different coding systems because the minimum grid sizes may be different for the two systems. The minimum grid sizes are 0.025 mil for MSFC Mann 1600 and 0.02 mil for MEBES. Some snapping to the next grid is therefore inevitable, and the results of this snapping effect are significant when submicron lines are present. However, no problem was noticed in the SC102 circuit because its minimum linewidth is 0.3 mil (7.6 microns). MEBES masks were fabricated and wafers were processed using the silicon-gate CMOS/SOS and aluminum-gate COS/MOS processing.

Woo, D. S.↗
NASA NTRS1983

Electron microscopic observations of hydrogen implantation in ilmenites

Hydrogen ion beams were found to form submicrometer, bumpy textures on the surface of ilmenite grains. From this effect, it is believed that similar bumpy textures seen on lunar ilmenite, pyroxene, and olivine grains are likely to be caused by solar wind irradiation. As a consequence, the concentration of bumpy textured grains may be a useful index of surface maturity for lunar soils. An attempt was made to search for grains with these bumpy textures in interplanetary dust and lunar and meteoritic regolith breccias in order to obtain information about the duration of their exposure to the solar wind. Solar wind irradiation was simulated on natural, terrestrial ilmenite. Hydrogen ion beams were directed at small grains and polished sections which were then examined by electron microscopy.

Blanford, G. E.↗
NASA NTRS1986

Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si

The interaction of hydrogen, injected into silicon using low-energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.

Singh, R.↗
NASA NTRS1998

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Thaik, Myo↗