Probing quantum floating phases in Rydberg atom arrays
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We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360 deg. C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 A ({approx}3.6 ML). Further development of hut arrays consists of simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4x2) or p(2x2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers.
Various top contact metal systems were studied. Only Ti Pd Cu approaches baseline (Ti Pd Ag) quality, but this system shows a lack of long term stability. Aluminum back surface field structures were fabricated and thicknesses of p superscript + material of up to 7.0 microns were achieved with open circuit voltages of 0.59V. A general purpose ultrasonic welder was purchased and tests using various metal foils are under way. During fabrication of the demonstration module, several cells became cracked. Due to redundancy of interconnections, the module was not open circuited but the efficiency was reduced to 8.8%. The broken cell was interconnected with a strap across the back and the efficiency was increased to 11.5%. A cost analysis was made and the results indicate a selling price of $0.56/watt peak (in 1986 with 1975 dollars).
The technological readiness of the proposed process sequence was reviewed. Process steps evaluated include: (1) plasma etching to establish a standard surface; (2) forming junctions by diffusion from an N-type polymeric spray-on source; (3) forming a p+ back contact by firing a screen printed aluminum paste; (4) forming screen printed front contacts after cleaning the back aluminum and removing the diffusion oxide; (5) cleaning the junction by a laser scribe operation; (6) forming an antireflection coating by baking a polymeric spray-on film; (7) ultrasonically tin padding the cells; and (8) assembling cell strings into solar circuits using ethylene vinyl acetate as an encapsulant and laminating medium.
Two process specifications supplied by contractors were tested. The aluminum silk screening process resulted in cells comparable to those from sputtered Al. The electroless plating of contacts specification could be used only with extensive modification. Several experiments suggest that there is some degradation of the front junction during the Al back surface field (BSF) fabrication. A revised process sequence was defined which incorporates Al BSF formation. A cost analysis of this process yielded a selling price of $0.75/watt peak in 1980.
An automated process sequence, to manufacture photovoltaic modules at a capacity of approximately 500 MW per year at a cost of approximately $0.50 per peak watt is described. Verification tests were performed and are reported along with cost predictions.
The process sequence for the fabrication of dendritic web silicon into solar panels was modified to include aluminum back surface field formation. Plasma etching was found to be a feasible technique for pre-diffusion cleaning of the web. Several contacting systems were studied. The total plated Pd-Ni system was not compatible with the process sequence; however, the evaporated TiPd-electroplated Cu system was shown stable under life testing. Ultrasonic bonding parameters were determined for various interconnect and contact metals but the yield of the process was not sufficiently high to use for module fabrication at this time. Over 400 solar cells were fabricated according to the modified sequence. No sub-process incompatibility was seen. These cells were used to fabricate four demonstration modules. A cost analysis of the modified process sequence resulted in a selling price of $0.75/peak watt.
Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work was directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The process was found to be extremely lengthy and cumbersome, and was also found to produce a product virtually identical to that produced by single step electroless nickel plating, as shown by adhesion tests and electrical characteristics of cells under illumination.
Progress was made on the process sequence for module fabrication. A shift from bonding with a conformal coating to laminating with ethylene vinyl acetate and a glass superstrate is recommended for further module fabrication. The processes that were retained for the selected process sequence, spin-on diffusion, print and fire aluminum p+ back, clean, print and fire silver front contact and apply tin pad to aluminum back, were evaluated for their cost contribution.
This paper considers a system that couples several phase-locked loops (PLL's) to improve carrier tracking performance. The system coherently combines the received carrier signals at geographically separated ground antennas to increase the total effective aperture. It automatically aligns the received carrier's phases to enhance received carrier signal-to-noise ratio. The tracking performance of this system is being assessed in terms of rms phase jitter.
Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 Watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.
Coherent combination of the power of several semiconductor lasers fabricated on the same substrate has been the subject of an intense research effort in recent years, the main motivation being to obtain higher power levels than those available from a single laser in a stable radiation pattern. Best results reported so far include 2.6 watts CW emitted power and less than 1 deg far-field angle (in the array plane) in arrays where all the lasers are electrically connected in parallel. A different type of coherent array, where each element has a separate contact, has been recently demonstrated. While requiring the more complex two-level metallization technology, applying a separate contact to each laser provides an additional degree of freedom in the design and the operation of monolithic arrays. The separate contacts can be employed to tailor the near-field and far-field distributions and to compensate for device-to-device nonuniformities. Furthermore, the control of the currents of the array elements allows the performance of a variety of other functions, such as beam scanning, spectral mode control, wavelength tuning and control of the mutual coherence between array elements.
A method for analyzing arbitrary one-dimensional waveguides is described and applied to find the lateral modes of gain-guided laser arrays directly, without the need for a coupled-mode approximation. Detailed results are given for a four-element array for which experimental results are available, and the effect of varying device parameters on the relative gains of the modes is considered. The results show differences between gain-guided and real-index guided arrays which are not evident in prior analyses.
A versatile and powerful streak camera/frame grabber system for studying the evolution of the near and far field radiation patterns of diode lasers was assembled and tested. Software needed to analyze and display the data acquired with the steak camera/frame grabber system was written and the total package used to record and perform preliminary analyses on the behavior of two types of laser, a ten emitter gain guided array and a flared waveguide Y-coupled array. Examples of the information which can be gathered with this system are presented.
Three methods of interpretation of outputs from sparsely sampled two-dimensional array of receiving ultrasonic transducers used in transmission experiments investigated. Methods are: description of sampled beam in terms of first few spatial moments of sampled distribution of energy; use of signal-dependent cutoff to limit extent of effective receiver aperture; and use of spatial interpolation to increase apparent density of sampling during computation. Methods reduce errors in computations of shapes of ultrasonic beams.
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A 640 element phase-steerable dipole array has been used to make highly sensitive observations of the planet Jupiter during the 1973 apparition. The satellite Io is found to have very little influence at the low flux levels, whereas the definition of sources A and B appears to be relatively flux independent. A two-dimensional analysis of the data in the Jupiter-Io plane has revealed considerable source B activity at low intensities which is not influenced by Io.
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