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At least 1,189 records · Page 66

Molecular dynamics of large systems with quantum corrections for the nuclei

This paper describes an approximate approach to quantum dynamics based on the quantum trajectory formulation of the Schrödinger equation. The quantum-mechanical effects are incorporated through the quantum potential of the mean-field type, acting on a trajectory ensemble in addition to the classical potential. Efficiency for large systems is achieved by using the quantum corrections for selected degrees of freedom and introduction of empirical friction into the ground-state energy calculations. The classical potential, if needed, can be computed on-the-fly using the Density Functional Tight Binding method of electronic structure merged with the quantum trajectory dynamics code. The approach is practical for a few hundred atoms. Applications include a study of adsorption of quantum hydrogen colliding with the graphene model, C{sub 37}H{sub 15} and a calculation of the ground state of solid {sup 4}He simulated by a cell 180-atoms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DL_POLY Quantum 2.0: A modular general-purpose software for advanced path integral simulations

DL_POLY Quantum 2.0, a vastly expanded software based on DL_POLY Classic 1.10, is a highly parallelized computational suite written in FORTRAN77 with a modular structure for incorporating nuclear quantum effects into large-scale/long-time molecular dynamics simulations. This is achieved by presenting users with a wide selection of state-of-the-art dynamics methods that utilize the isomorphism between a classical ring polymer and Feynman’s path integral formalism of quantum mechanics. Here, the flexible and user-friendly input/output handling system allows the control of methodology, integration schemes, and thermostatting. DL_POLY Quantum is equipped with a module specifically assigned for calculating correlation functions and printing out the values for sought-after quantities, such as dipole moments and center-of-mass velocities, with packaged tools for calculating infrared absorption spectra and diffusion coefficients.

36 MATERIALS SCIENCE↗

Significant change in the electronic behavior associated with structural distortions in monocrystalline SrAg 4 As 2

Here, we report a combined study of transport and thermodynamic measurements on the layered pnictide material SrAg 4 As 2 . Upon cooling, a drop in electrical and Hall resistivity, a jump in heat capacity, and an increase in susceptibility and magnetoresistance are observed around 110 K. All suggest nonmagnetic phase transitions emerge at around 110 K, likely associated with structural distortions. In sharp contrast with the first-principles calculations based on the crystal structure at room temperature, quantum oscillations reveal small Fermi pockets with light effective masses, suggesting significant change in the Fermi surface topology caused by the low-temperature structural distortion. Furthermore, no superconductivity emerges in SrAg 4 As 2 down to 2 K under pressures up to 2.13 GPa; instead, the low-temperature structural distortion moves up linearly to high temperature at a rate of ≈ 13 K/GPa above 0.89 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dynamic linear response quantum algorithm

The dynamic linear response of a quantum system is critical for understanding both the structure and dynamics of strongly interacting quantum systems, including neutron scattering from materials, photon and electron scattering from atomic systems, and electron and neutrino scattering by nuclei. Here, we present a general algorithm for universal quantum computers to calculate the dynamic linear response function with controlled errors and to obtain information about specific final states that can be directly compared to experimental observations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Mechanism for Anomalous Hall Ferromagnetism in Twisted Bilayer Graphene

Motivated by the recent observation of an anomalous Hall effect in twisted bilayer graphene, here we use a lowest Landau level model to understand the origin of the underlying symmetry-broken correlated state. This effective model is rooted in the occurrence of Chern bands which arise due to the coupling between the graphene device and its encapsulating substrate. Our model exhibits a phase transition from a spin-valley polarized insulator to a partial or fully valley unpolarized metal as the bandwidth is increased relative to the interaction strength, consistent with experimental observations. In sharp contrast to standard quantum Hall ferromagnetism, the Chern number structure of the flat bands precludes an instability to an intervalley coherent phase, but allows for an excitonic vortex lattice at large interaction anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Predictive Capability for Strongly Correlated Systems: Mott Transition in MnO, Multielectron Magnetic Moments, and Dynamics Effects in Correlated Materials

There are classes of materials that are important to DOE and to the science and technology community, generically referred to as strongly correlated electron systems (SCES), which have proven very difficult to understand and to simulate in a material-specific manner. These range from actinides, which are central to the DOE mission, to transition metal oxides, which include the most promising components of new spin electronics applications as well as the high temperature superconductors, to intermetallic compounds whose heavy fermion characteristics and quantum critical behavior has given rise to some of the most active areas in condensed matter theory. The objective of the CMSN cooperative research team was to focus on the application of these new methodologies to the specific issue of Mott transitions, multi-electron magnetic moments, and dynamical properties correlated materials. Working towards this goal, the W&M team extended its first-principles phaseless auxiliary-field quantum Monte Carlo (AFQMC) method to accurately calculate structural phase transitions and excited states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct evidence of single quantum dot emission from GaN islands formed at threading dislocations using nanoscale cathodoluminescence: A source of single photons in the ultraviolet

Intense emission from GaN islands embedded in AlN resulting from GaN/AlN quantum well growth is directly resolved by performing cathodoluminescence spectroscopy in a scanning transmission electron microscope. Line widths down to 440 μeV are measured in a wavelength region between 220 and 310 nm confirming quantum dot like electronic properties in the islands. These quantum dot states can be structurally correlated to islands of slightly enlarged thicknesses of the GaN/AlN quantum well layer preferentially formed in vicinity to dislocations. The quantum dot states exhibit single photon emission in Hanbury Brown-Twiss experiments with a clear antibunching in the second order correlation function at zero time delay.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Dissipative ground state preparation in ab initio electronic structure theory

Dissipative engineering is a powerful tool for quantum state preparation, and has drawn significant attention in quantum algorithms and quantum many-body physics in recent years. In this work, we introduce a novel approach using the Lindblad dynamics to efficiently prepare the ground state for general ab initio electronic structure problems on quantum computers, without variational parameters. These problems often involve Hamiltonians that lack geometric locality or sparsity structures, which we address by proposing two generic types of jump operators for the Lindblad dynamics. Type-I jump operators break the particle number symmetry and should be simulated in the Fock space. Type-II jump operators preserves the particle number symmetry and can be simulated more efficiently in the full configuration interaction space. For both types of jump operators, we prove that in a simplified Hartree-Fock framework, the spectral gap of our Lindbladian is lower bounded by a universal constant. For physical observables such as energy and reduced density matrices, the convergence rate of our Lindblad dynamics with Type-I jump operators remains universal, while the convergence rate with Type-II jump operators only depends on coarse grained information such as the number of orbitals and the number of electrons. To validate our approach, we employ a Monte Carlo trajectory-based algorithm for simulating the Lindblad dynamics for full ab initio Hamiltonians, demonstrating its effectiveness on molecular systems amenable to exact wavefunction treatment.

Quantum chemistry↗

Floquet–Magnus theory and generic transient dynamics in periodically driven many-body quantum systems

This work explores a fundamental dynamical structure for a wide range of many-body quantum systems under periodic driving. Generically, in the thermodynamic limit, such systems are known to heat up to infinite temperature states in the long-time limit irrespective of dynamical details, which kills all the specific properties of the system. In the present study, instead of considering infinitely long-time scale, we aim to provide a general framework to understand the long but finite time behavior, namely the transient dynamics. In our analysis, we focus on the Floquet–Magnus (FM) expansion that gives a formal expression of the effective Hamiltonian on the system. Although in general the full series expansion is not convergent in the thermodynamics limit, we give a clear relationship between the FM expansion and the transient dynamics. More precisely, we rigorously show that a truncated version of the FM expansion accurately describes the exact dynamics for a certain time-scale. Our theory reveals an experimental time-scale for which non-trivial dynamical phenomena can be reliably observed. We discuss several dynamical phenomena, such as the effect of small integrability breaking, efficient numerical simulation of periodically driven systems, dynamical localization and thermalization. Especially on thermalization, we discuss a generic scenario on the prethermalization phenomenon in periodically driven systems. -- Highlights: •A general framework to describe transient dynamics for periodically driven systems. •The theory is applicable to generic quantum many-body systems including long-range interacting systems. •Physical meaning of the truncation of the Floquet–Magnus expansion is rigorously established. •New mechanism of the prethermalization is proposed. •Revealing an experimental time-scale for which non-trivial dynamical phenomena can be reliably observed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Mapping Arbitrarily Sparse Two-body Interactions on One-dimensional Quantum Circuits

We consider an assignment problem arising in Fermionic-swap based mapping of the one-body and two-body interaction terms in simulating time evolution of a sparse second-quantized electronic structure Hamiltonian on a quantum computer. Relative efficiency of different swap networks depends on the relative costs of performing a swap layer and computing a Hamiltonian interaction term. Under the assumption that the interaction term cost dominates the computation, we develop an iterative algorithm that uses hypergraph optimal linear arrangement (HOLA) and partial distance-2 coloring to exploit arbitrary sparsity in the Hamiltonian for efficient computation using swap networks. Using a set of 122 problems from computational chemistry, we demonstrate performance improvements up to 100% relative to the state-of-the-art approaches for one-body terms and up to 86% utilization for two-body terms relative to a theoretical peak utilization. To the best of our knowledge, this is the first study to exploit arbitrary sparsity in orbital interactions for efficient computation on one-dimensional qubit connectivity layouts. The proposed algorithms form the basis for extension to map general k-body interactions that arise in other domains onto generalized qubit connectivity layouts.

quantum computing, Combinatorial Optimization, hyp↗

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100 nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 μm window equal to 42% for U{sub bias} = −0.1 V, 77 K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Tunable-Quantum-Well Infrared Detector

Proposed detector of infrared photons based on photon-assisted, resonant quantum-mechanical tunneling between adjacent energy wells in its semiconductor structure. Wavelength adjusted by changing applied voltage. Device contains alternating layers of different seminconductors which form double-quantum-well electron-energy structure. Tunable-quantum-well detectors made on single chip constitutes line imager. Many such devices stacked to form two-dimensional imaging device. Signal-processing circuitry integrated into chip at its lower end. Potential barriers and wells produced by alternating layers of different semiconductor materials. Steepness of slope proportional to applied electric field. Electric field and thicknesses and heights of barriers selected to favor photon-assisted, resonant quantum-mechanical tunneling at chosen photon frequency.

Maserjian, Joseph↗

Band structure effects on resonant tunneling in III-V quantum wells versus two-dimensional vertical heterostructures

Since the invention of the Esaki diode, resonant tunneling devices have been of interest for applications including multi-valued logic and communication systems. These devices are characterized by the presence of negative differential resistance in the current-voltage characteristic, resulting from lateral momentum conservation during the tunneling process. While a large amount of research has focused on III-V material systems, such as the GaAs/AlGaAs system, for resonant tunneling devices, poor device performance and device-to-device variability have limited widespread adoption. Recently, the symmetric field-effect transistor (symFET) was proposed as a resonant tunneling device incorporating symmetric 2-D materials, such as transition metal dichalcogenides (TMDs), separated by an interlayer barrier, such as hexagonal boron-nitride. The achievable peak-to-valley ratio for TMD symFETs has been predicted to be higher than has been observed for III-V resonant tunneling devices. This work examines the effect that band structure differences between III-V devices and TMDs has on device performance. It is shown that tunneling between the quantized subbands in III-V devices increases the valley current and decreases device performance, while the interlayer barrier height has a negligible impact on performance for barrier heights greater than approximately 0.5 eV.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Twisted bilayer graphene as topological heavy fermion: II. Analytical approximations of the model parameters

The recently-introduced topological heavy fermion (THF) model [1] of twisted bilayer graphene (TBG) aims to reconcile the quantum-dot-like electronic structure of the latter observed by scanning tunneling microscopy, with its electron delocalization seen in transport measurements. The THF model achieves this by coupling localized (heavy) fermions with anomalous conduction electrons. Originally, the parameters of the THF model were obtained numerically from the Bistritzer–Macdonald (BM) model of TBG [1]. In this work, we derive analytical expressions for the THF model parameters as a function of the twist angle, the ratio between the tunneling amplitudes at the AA and AB regions (w 0 /w 1 ), and the screening length of the interaction potential. By numerically computing the THF model parameters across an extensive experimentally-relevant parameter space, we show that the resulting approximations are remarkably good, i.e., within the 30% relative error for almost the entire parameter space. At the single-particle level, the THF model accurately captures the energy spectrum of the BM model over a large phase space of angles and tunneling amplitude ratios. When interactions are included, we also show that the THF description of TBG is good around the magic angle for realistic values of the tunneling amplitude ratios (0.6 ≤ w 0 /w 1 ≤ 1.0), for which the hybridization between the localized and conduction fermions γ is smaller than the onsite repulsion of the heavy fermions U 1 (i.e., |γ| < U 1 ).

Approximation methods↗

Quantum tricritical point in the temperature-pressure-magnetic field phase diagram of CeTiGe 3

We report the temperature-pressure-magnetic eld phase diagram of the ferromagnetic Kondolattice CeTiGe 3 determined by means of electrical resistivity measurements. Measurements up to ~5.8GPa reveal a rich phase diagram with multiple phase transitions. At ambient pressure, CeTiGe 3 orders ferromagnetically at T C =14 K. Application of pressure suppresses T C , but a pressure induced ferromagnetic quantum criticality is avoided by the appearance of two new successive transitions for p>4.1GPa that are probably antiferromagnetic in nature. These two transitions are suppressed under pressure, with the lower temperature phase being fully suppressed above 5.3GPa. The critical pressures for the presumed quantum phase transitions are p1≅4.1GPa and p2≅5.3GPa. Above 4.1GPa, application of magnetic eld shows a tricritical point evolving into a wing structure phase with a quantum tricritical point at 2.8T at 5.4GPa, where the rst order antiferromagneticferromagnetic transition changes into the second order antiferromagnetic-ferromagnetic transition.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Superradiance in a two-channel quantum wire

A one-dimensional, two-channel quantum wire is studied in the effective non-Hermitian Hamiltonian framework. Analytical expressions are derived for the band structure of the isolated wire. Quantum states and transport properties of the wire coupled to two ideal leads at the edges are studied in detail. The width distribution of the quasistationary states varies as a function of the coupling strength to the environment. At weak coupling, all the eigenenergies uniformly acquire small widths. The picture changes entirely at strong coupling, a certain number of states (“super-radiant”) are greatly broadened, while the rest remain long-lived states, a pure quantum mechanical effect as a consequence of quantum interference. The transition between the two regimes greatly influences the transport properties of the system. The maximum transmission through the wire occurs at the super-radiance transition. We consider also a realistic situation with energy-dependent coupling to the continuum due to the existence of decay threshold where super-radiance still plays a significant role in transport properties of the system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗