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At least 1,189 records · Page 66
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Mechanism of zeolite X crystallization from diatomite

Highlights: • The intermediate species of zeolite X appears on the surface of solid particles. • The β cages build up the intermediate species, which was consist of four-membered rings (4R) and six-membered rings (6R). • The double six-membered ring (D6R) played a critical role for the crystallization process. • The β cages interconnect via double six-membered rings to form the framework of zeolite X. - Abstract: Here we systemically investigated the crystallization process of zeolite X using diatomite, a natural cost-effective silica precursor by the hydrothermal method. To decipher the mechanism, solids were separated from the mixtures at various stages of crystallization and were characterized by XRD, SEM, solid state NMR, FT-IR, UV-Raman and XRF. The XRD patterns revealed that the crystallization started between 3 and 3.5 h and ended by 5 h. The SEM images showed that the intermediate species of zeolite X appear on the surface of particles. The FT-IR and UV-Raman spectra suggested the presence of double six-membered rings (D6R) in the framework of zeolite X and they played a critical role in the crystallization process. Furthermore, the UV-Raman spectra indicated that the secondary building units of β cages formed the intermediate species and they were interconnected via double six-membered rings to form the framework of zeolite X.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Comparison of dislocation content measured with transmission electron microscopy and micro-Laue diffraction based streak analysis

The subsurface dislocation content in a Ti-5Al-2.5Sn (wt%) uniaxial tension sample deformed at ambient temperature was characterized by peak streak analysis of micro-Laue diffraction patterns collected non-destructively by differential aperture X-raymicroscopy, and with focused ion beam transmission electron microscopy of material in the same volume. This comparison reveals that micro-Laue diffraction streak analysis based on an edge dislocation assumption can accurately identify the dominant dislocation slip system history (Burgers vector and plane observed by TEM), despite the fact that dislocations have predominantly screw character. As a result, other dislocations identified by TEM were not convincingly discernible from the peak streak analysis.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Unraveling the Complex Delithiation Mechanisms of Olivine-Type Cathode Materials, LiFe x Co 1– x PO 4

The delithiation mechanisms occurring within the olivine-type class of cathode materials for Li-ion batteries have received considerable attention owing to the good capacity retention at high rates for LiFePO4. A comprehensive mechanistic study of the (de)lithiation reactions that occur when the substituted olivine-type cathode materials LiFexCo1-xPO4 (x = 0, 0.05, 0.125, 0.25, 0.5, 0.75, 0.875, 0.95 and 1) are electrochemically cycled is reported here, using in situ X-ray diffraction (XRD) data. On the first charge, two intermediate phases are observed and identified: Li1-x(Fe3+)x(Co2+)1- xPO4 for 0 < x < 1 (i.e. after oxidation of Fe2+ => Fe3+) and Li2/3FexCo1-xPO4 for 0 ≤ x ≤ 0.5 (i.e. the Co-majority materials). For the Fe-rich materials, we study how nonequilibrium, single-phase mechanisms that occur discretely in single particles, as observed for LiFePO4 at high rates, is affected by Co substitution. In the Co-majority materials, a two-phase mechanism with a coherent interface is observed, as was seen in LiCoPO4, and we discuss how it is manifested in the XRD patterns. We then compare the nonequilibrium, single-phase mechanism with the bulk single-phase and the coherent interface two-phase mechanisms. Despite the apparent differences between these mechanisms, we discuss how they are related and interconverted as a function of Fe/Co substitution and the potential implications for the electrochemistry of this system.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural and Electrochemical Characteristics of Ca-Doped “Flower-like” Li 4 Ti 5 O 12 Motifs as High-Rate Anode Materials for Lithium-Ion Batteries

Doped motifs offer an intriguing structural pathway toward improving conductivity for battery applications. Specifically, Ca-doped, three-dimensional “flower-like” Li 4–x Ca x Ti 5 O 12 (“x” = 0, 0.1, 0.15, and 0.2) micrometer-scale spheres have been successfully prepared for the first time using a simple and reproducible hydrothermal reaction followed by a short calcination process. The products were experimentally characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) mapping, inductively coupled plasma optical emission spectrometry (ICP-OES), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), and galvanostatic charge–discharge testing. Calcium dopant ions were shown to be uniformly distributed within the LTO structure without altering the underlying “flower-like” morphology. The largest lattice expansion and the highest Ti 3+ ratios were noted with XRD and XPS, respectively, whereas increased charge transfer conductivity and decreased Li + -ion diffusion coefficients were displayed in EIS for the Li 4–x Ca x Ti 5 O 12 (“x” = 0.2) sample. The “x” = 0.2 sample yielded a higher rate capability, an excellent reversibility, and a superior cycling stability, delivering 151 and 143 mAh/g under discharge rates of 20C and 40C at cycles 60 and 70, respectively. In addition, a high cycling stability was demonstrated with a capacity retention of 92% after 300 cycles at a very high discharge rate of 20C. In addition, first-principles calculations based on density functional theory (DFT) were conducted with the goal of further elucidating and understanding the nature of the doping mechanism in this study. The DFT calculations not only determined the structure of the Ca-doped Li 4 Ti 5 O 12 , which was found to be in accordance with the experimentally measured XPD pattern, but also yielded valuable insights into the doping-induced effect on both the atomic and electronic structures of Li 4 Ti 5 O 12 .

25 ENERGY STORAGE↗
DOE OSTI2024

Cu(II) Stability and UV-Induced Electron Transfer in a Metal–Organic Hybrid: An EPR, DFT, and Crystallographic Characterization of Copper-Doped Zinc Creatininium Sulfate

Single-crystal X-ray diffraction and electron paramagnetic resonance (EPR) spectroscopic experiments, complemented by quantum chemical DFT calculations, were carried out on the copper-doped metal–organic hybrid and Tutton salt analogue zinc creatininium sulfate to determine its crystal structure, to characterize the electronic structure of the doped Cu(II) binding site, and to propose a pathway for an excited-state, proton-coupled electron transfer (PCET) process in UV-exposed crystals. The crystal structure is isomorphous to that of cadmium creatininium sulfate, which has the transition ion, not in direct coordination with the creatinine, but forming a hexahydrate complex, which is bridged to a creatininium through an intervening sulfate ion. The EPR g (2.446, 2.112, 2.082) and copper hyperfine (A Cu : -327, -59.6, 10.8 MHz) tensor parameters are consistent with doped copper replacing host zinc in the metal–hexahydrate complex. These parameters are similar to those observed for copper hexahydrate in doped Tutton salt systems at low temperature, where the unpaired electron occupies mainly the copper 3d x 2 –y 2 orbital. At room temperature in the Tutton systems, vibration couplings stemming from a dynamic Jahn–Teller effect cause tensor averaging which results in a reduction in their maximum g-tensor and hyperfine tensor values. However, like for the doped isomorphous Cd creatinine crystal, the Cu(II) EPR exhibits little, or no room temperature averaging compared to its low temperature pattern. Samples exposed to 254 nm UV light generate a carbon-centered free radical species, characterized by an isotropic g-tensor (g = 2.0029) and an alpha-proton hyperfine coupling (-24 -14 +4 G). These parameters identify it as a creatinine radical cation formed by the oxidative release of one of its C2 methylene hydrogens. DFT calculations confirm the unpaired electronic structures of both the Cu(II) site and free radical. The growth in radical concentration with an increase in the UV exposure time coincides with a decrease in the copper EPR signal, indicating a coupled light-induced oxidation reduction process. A comparison of the crystal structure with the EPR parameters and DFT results provides evidence for a UV-induced PCET.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Crystalline 1D Coordination Polymer Inhibitor Layer Leads to Vertical Sidewalls in Selectively Deposited ZnO on Nanoscale Patterns

Area-selective atomic layer deposition (AS-ALD) is a promising technique for the fabrication of next-generation nanoelectronics. There are two main challenges in AS-ALD: (1) achieving high selectivity of deposition on the growth regions, and (2) preventing mushrooming of the growth material onto the nongrowth regions and achieving well-defined interfaces. In this work, we use benzenethiol (BT) as an inhibitor in the selective deposition of ZnO on SiO 2 in the presence of copper with and without a native oxide (Cu/CuO x ). We observe that BT forms a monolayer on the Cu surface and a Cu-thiolate multilayer structure on CuO x . Using grazing incidence X-ray diffraction combined with simulations, we find that the multilayer structure is crystalline and composed of 1D coordination polymers of Cu-thiolate. Here, using ellipsometry and X-ray photoelectron spectroscopy, we show that the BT consumes the entirety of the CuO x during multilayer formation, allowing the multilayer thickness to be tuned by the thickness of the original oxide. Both the monolayer BT and the multilayer BT prove to be effective inhibitors of ZnO ALD, blocking nearly 500 ALD cycles, which is more than twice that achieved with other thiol inhibitors. Finally, we demonstrate that the multilayer structure can prevent mushrooming of the ALD material onto the nongrowth surface of nanoscale patterns, creating vertical sidewalls with well-defined material interfaces and providing excellent pattern transfer, even for a relatively thick deposited film. As such, these results demonstrate that BT is not only an effective inhibitor but also that its ability to form tunable multilayers makes it well-suited for highly precise nanopatterning applications.

Layers↗
DOE OSTI2019

A Natural 2D Heterostructure [Pb 3.1 Sb 0.9 S 4 ][Au x Te 2– x ] with Large Transverse Nonsaturating Negative Magnetoresistance and High Electron Mobility

We report the two-dimensional (2D) natural hetero-structure [Pb 3.1 Sb 0.9 S 4 ][Au$_x$Te$_{2-x}$] ($x$ = 0.52-0.36) which shows anomalous, transverse nonsaturating negative magnetoresistance (MR). For $x$ = 0.52, the material has a commensurately modulated structure with alternating [Pb3.1Sb0.9S4] rocksalt layers and atomically thin [Au$_x$Te$_{2-x}$] sheets, as determined by single-crystal X-ray diffraction using a (3 + 1)-dimensional space group; for other $x$ compositions, the modulated structure is absent and the Au and Te atoms are disordered. The transport properties in this system at low temperature (<100 K) are dominated by an unusual 2D hopping mechanism, while at room temperature a high carrier mobility of similar to ~1352 cm 2 V -1 s -1 obtained ($x$ = 0.36). The confined electrons within the [Au$_x$Te$_{2-x}$] layers are also exposed to interlayer coupling with the insulating [Pb 3.1 Sb 0.9 S 4 ] layers, and as a result, the properties of the heterostructures emerge not only from the constituent layers but also the interactions between them. Furthermore, the various Au and Te coordination patterns found in the [Au$_x$Te$_{2-x}$] sheets as a function of $x$ further contribute to a unique electronic structure that leads to the anomalous nonsaturating negative MR with different field dependent behaviors. First-principles calculations indicate that the [Au$_x$Te$_{2-x}$] sheets are responsible for the unusual electrical transport properties in this 2D system.

2D materials↗
DOE OSTI2019

Synthesis and Characterization of Single Phase Metal Dodecaboride Solid Solutions: Zr 1-x Y x B 12 and Zr 1-x U x B 12

Single-phase metal dodecaboride solid solutions, Zr 0.5 Y 0.5 B 12 and Zr 0.5 U 0.5 B 12 , were arranged by arc melting from pure elements. The phase purity and composition were established by powder X-ray diffraction (PXRD), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and 10 B and 11 B solid-state nuclear magnetic resonance (NMR) spectroscopy. The effects of carbon addition to Zr 1-x Y x B 12 were studied and it was found that carbon causes fast cooling and as a result rapid nucleation of grains, as well as “templating” and patterning effects of the surface morphology. The hardness of the Zr 0.5 Y 0.5 B 12 phase is 47.6 ± 1.7 GPa at 0.49 N load, which is ~17% higher than that of its parent compounds, ZrB 12 and YB 12 , with hardness values of 41.6 ± 2.6 and 37.5 ± 4.3 GPa, respectively. The hardness of Zr 0.5 U 0.5 B 12 is ~54% higher than that of its UB 12 parent. The dodecaborides were confirmed to be metallic by band structure calculations, diffuse reflectance UV–vis, and solid-state NMR spectroscopies. The nature of the dodecaboride colors—violet for ZrB 12 and blue for YB 12 —can be applied to charge-transfer. XPS indicates that the metals are in the following oxidation states: Y 3+ , Zr 4+ , and U$^{{5+}/^{6+}}$. The superconducting transition temperatures (T c ) of the dodecaborides were determined to be 4.5 and 6.0 K for YB 12 and ZrB 12 , respectively, as shown by resistivity and superconducting quantum interference device (SQUID) measurements. The T c of the Zr 0.5 Y 0.5 B 12 solid solution was suppressed to 2.5 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy

Chemical beam epitaxy has been used to grow layers of GaP1 − xNx, GaP1 − yAsy, and nearly lattice-matched layers GaP1 − x − yAsyNx on Si substrates. To address the issue of antiphase domain generation associated with the growth of polar semiconductors on Si, misoriented Si(001) substrates have been used combined with a carefully designed GaP buffer layer growth. The reflection high-energy electron diffraction pattern exhibits a (2 × 4) surface reconstruction after GaP buffer layer and GaP(As,N) graded layer growth, indicating the good surface quality and planarity of the grown layers. Sample composition was obtained by simultaneous acquisition of Rutherford backscattering spectrometry and nuclear reaction analysis, indicating a linear dependence of N and As mole fractions on the flux of their respective precursor. GaP1 − x − yAsyNx layers grown on Si substrates have a lattice mismatch not larger than ±0.005 for N contents in the range 0.02 < x < 0.05. High-resolution X-ray diffraction reciprocal space maps demonstrate a good crystalline quality. Intense photoluminescence spectra have been measured in all GaP1 − xNx and GaP1 − x − yAsyNx layers, as it is expected for direct bandgap materials. Two wide overlapped emission peaks are observed in all the spectra, most likely related to near bandgap recombination. The position of the higher energy peak for GaP1 − xNx and GaP1 − x − yAsyNx layers has been compared to bandgap energy calculations using the band anticrossing model, showing good agreement.

Ben Saddik, K.↗
DOE OSTI2022

Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness

Wide-bandgap III-nitride heterostructures are required for a variety of device applications. However, this alloy system has a large lattice constant and thermal expansion coefficient mismatch that limits the alloy composition and layer thickness for many heteroepitaxial device structures. Consequently, various methods have been devised to allow the heteroepitaxial growth of AlInGaN heterostructures to accommodate this inherent strain. In this work, we describe a non-planar-growth approach that enables the deposition of crack-free high-Al-mole-fraction Al x Ga 1-x N on patterned GaN/sapphire templates and bulk GaN substrates with large-area mesas. We have studied the effects of the patterned mesa width, the mesa etch depth, and the gap between the mesas on the heteroepitaxy of Al x Ga 1-x N superlattices with an average Al molar fraction 0.11 < x¯ < 0.21 and non-planar overgrowth growth thicknesses up to 3.5 μm. Similar to the planar growth approach, increasing the thickness and Al mole fraction of the Al x Ga 1-x N superlattices leads to surface cracking when exceeding the critical layer thickness. However, limiting the mesa dimension in one direction enables strain mitigation and drastically increases the critical layer thickness. Additionally, larger etch depths of the mesas increase the Al alloy composition and thickness for crack-free AlGaN heteroepitaxy whereas the gap in between the mesas seems to have no crucial influence. We demonstrate that the Al alloy composition and layer thicknesses of such heterostructures can be increased far beyond the critical layer thickness for planar growth and demonstrate the growth of a crack-free full AlxGa 1-x N/GaN quantum-well laser heterostructure designed for operation at ~370 nm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Crystal structure and magnetic properties in semiconducting Eu 3-δ Zn x Sn y As 3 with Eu-Eu dimers

Magnetic structure and crystal symmetry, which primarily determine the time-reversal and inversion symmetry, may give rise to numerous exotic quantum phenomena in magnetic semiconductors and semimetals when arranged in different patterns. Here, a new layered magnetic semiconductor, Eu 3-δ Zn x Sn y As 3 , was discovered and high-quality single crystals were grown using the Sn flux. According to structural characterization by x-ray diffraction and atomic-resolution scanning transmission electron microscopy, Eu 3-δ Zn x Sn y As 3 is found to crystallize in a hexagonal symmetry with the space group P6 3 /mmc (No. 194). After examining different specimens, we conclude that their stoichiometry is fixed at ~Eu 2.6 Zn 0.65 Sn 0.85 As 3 , which meets the chemical charge balance. Eu 3-δ Zn x Sn y As 3 is composed of septuple (Eu 1-δ Sn y As 2 )-Eu-(Zn x As)-Eu sequences. The shortest Eu–Eu distance in the system is between two Eu layers separated by Zn x As along the c-axis. Magnetization measurement shows an antiferromagnetic ordering in Eu 3-δ Zn x Sn y As 3 at T N ~ 12 K, where the magnetic easy-axis is along the c-axis, and Mössbauer spectroscopy observes magnetic hyperfine splitting on Eu and Sn at 6 K. Magnetic anisotropy is significantly different from the ones along the ab-plane in other layered Eu-based magnetic semimetals. Heat capacity measurements confirm the magnetic transition around 12 K. Electrical resistivity measurement indicates semiconductor behavior with a band gap of ~0.86 eV. Finally, various Eu-based magnetic semiconductors could provide a tunable platform to study potential topological and magnetic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Robust superconductivity and the suppression of charge-density wave in the quasi-skutterudites Ca 3 ( Ir 1 – x Rh x ) 4 Sn 13 single crystals at ambient pressure

Single crystals of the quasi-skutterudite compounds Ca 3 (Ir 1-x Rh x ) 4 Sn 13 (3–4–13) were synthesized by flux growth and characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, magnetization, resistivity, and radio frequency magnetic susceptibility techniques. The coexistence and competition between the charge density wave (CDW) and superconductivity was studied by varying the Rh/Ir ratio. The superconducting transition temperature, T c , varies from 7 K in pure Ir (x = 0) to 8.3 K in pure Rh (x = 1). Temperature-dependent electrical resistivity reveals monotonic suppression of the CDW transition temperature, T CDW (x). The CDW starts in pure Ir, x = 0, at T CDW ≈ 40 K and extrapolates roughly linearly to zero at x c ≈ 0.53–0.58 under the superconducting dome. Magnetization and transport measurements show a significant influence of CDW on superconducting and normal states. Meissner expulsion is substantially reduced in the CDW region, indicating competition between the CDW and superconductivity. The low-temperature resistivity is higher in the CDW part of the phase diagram, consistent with the reduced density of states due to CDW gapping. Its temperature dependence just above T c shows signs of non-Fermi liquid behavior in a cone-like composition pattern. We conclude that the Ca 3 (Ir 1-x Rh x ) 4 Sn 13 alloy is a good candidate for a composition-driven quantum critical point at ambient pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Doping effects of Cr on the physical properties of BaFe 1.9 - x Ni 0.1 Cr x As 2

We present a systematic study on the heavily Cr doped iron pnictides BaFe1.9_xNi0.1CrxAs2 by using elastic neutron scattering, high-resolution synchrotron x-ray diffraction (XRD), resistivity, and Hall transport measurements. When the Cr concentration increases from x = 0 to 0.8, neutron diffraction experiments suggest that the collinear antiferromagnetism persists in the whole doping range, where the Neel temperature T-n coincides with the tetragonal-to-orthorhombic structural transition temperature T-s, and both of them keeps around 35 K. The magnetic ordered moment, on the other hand, increases within increasing x until x = 0.5, and then decreases with further increasing x. Detailed refinement of the powder XRD patterns reveals that the Cr substitutions actually stretch the FeAs4 tetrahedron along the c axis and lift the arsenic height away from the Fe-Fe plane. Transport results indicate that the charge carriers become more localized upon Cr doping, then changes from electron type to hole type around x = 0.5. Our results suggest that the ordered moment and the ordered temperature of static magnetism in iron pnictides can be decoupled and tuned separately by chemical doping.

Gong, Dongliang↗
DOE OSTI2024

Exploring the impact of Cr-doping on the crystallographic and magnetic structure of Mn 5 Si 3 antiferromagnetic alloy

Here, the role of Cr-doping on the structural and magnetic ground states of Mn 5 Si 3 alloy has been investigated through temperature-dependent neutron powder diffraction (NPD) and X-ray absorption fine structure (XAFS) techniques. All the Cr-doped alloys of nominal composition Mn 5-x Cr x Si 3 (for x = 0.05, 0.1, and 0.2) undergo two first-order magneto-structural phase transitions from hexagonal (space group: P6 3 /mcm) paramagnetic → orthorhombic (space group: Ccmm) collinear antiferromagnetic → orthorhombic (space group: Cc2m) non-collinear antiferromagnetic phase on cooling from room temperature. NPD studies at different constant temperatures indicate that both anti ferromagnetic phases are commensurate in nature and can be represented by q = (0,1,0) magnetic propagation vector for all the Cr-doped alloys. Such doping at the Mn-site results in a significant modification of the non-collinear antiferromagnetic structure (both moment size and orientation) and hence affects the unusual magnetic properties, like inverted hysteresis loop, thermomagnetic irreversibility, etc. The XAFS measurements were performed to interpret the local environment of doped Cr atoms in detail, which is critical for a microscopic understanding of the unusual properties of this class of Cr-doped Mn 5 Si 3 alloys. The analysis confirms the elemental state of Cr in the doped alloys and indicates a high degree of preservation of local crystallographic structure with varying Cr concentration and sample temperature. Doping induces intriguing changes in XAFS patterns, elucidated through different types of scattering mechanisms associated with the central absorbing Cr atom.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

On the effect of Ga and In substitutions in the Ca 11 Bi 10 and Yb 11 Bi 10 bismuthides crystallizing in the tetragonal Ho 11 Ge 10 structure type

The Ga- and In-substituted bismuthides Ca 11 Ga x Bi 10– x , Ca 11 In x Bi 10– x , Yb 11 Ga x Bi 10– x , and Yb 11 In x Bi 10– x ( x < 2) can be readily synthesized employing molten Ga or In metals as fluxes. They crystallize in the tetragonal space group I 4/ mmm and adopt the Ho 11 Ge 10 structure type (Pearson code tI 84; Wyckoff sequence n 2 m j h 2 e 2 d ). The structural response to the substitution of Bi with smaller and electron-poorer In or Ga has been studied by single-crystal X-ray diffraction methods for the case of Ca 11 In x Bi 10– x [ x = 1.73 (2); octabismuth undecacalcium diindium]. The refinements show that the In atoms substitute Bi only at the 8 h site. The refined interatomic distances show an unconventional – for this structure type – bond-length distribution within the anionic sublattice. The latter can be viewed as consisting of isolated Bi 3- anions and [In 4 Bi 8 20- ] clusters for the idealized Ca 11 In 2 Bi 8 model. Formal electron counting and first-principle calculations show that the peculiar bonding in this compound drives the system toward an electron-precise state, thereby stabilizing the observed bond-length pattern.

Chemistry↗
NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗
NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗