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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,207 records · Page 67
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Limits of carrier mobility in Sb-doped SnO{sub 2} conducting films deposited by reactive sputtering

Electron transport in Sb-doped SnO{sub 2} (ATO) films is studied to unveil the limited carrier mobility observed in sputtered films as compared to other deposition methods. Transparent and conductive ATO layers are deposited from metallic tin targets alloyed with antimony in oxygen atmosphere optimized for reactive sputtering. The carrier mobility decreases from 24 cm{sup 2} V{sup −1} s{sup −1} to 6 cm{sup 2} V{sup −1} s{sup −1} when increasing the doping level from 0 to 7 at. %, and the lowest resistivity of 1.8 × 10{sup −3} Ω cm corresponding to the mobility of 12 cm{sup 2} V{sup −1} s{sup −1} which is obtained for the 3 at. % Sb-doped ATO. Temperature-dependent Hall effect measurements and near-infrared reflectance measurements reveal that the carrier mobility in sputtered ATO is limited by ingrain scattering. In contrast, the mobility of unintentionally doped SnO{sub 2} films is determined mostly by the grain boundary scattering. Both limitations should arise from the sputtering process itself, which suffers from the high-energy-ion bombardment and yields polycrystalline films with small grain size.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Berry phase mechanism of the anomalous Hall effect in a disordered two-dimensional magnetic semiconductor structure.

In this study, the anomalous Hall effect (AHE) arises from the interplay of spin-orbit interactions and ferromagnetic order and is a potentially useful probe of electron spin polarization, especially in nanoscale systems where direct measurement is not feasible. While AHE is rather well-understood in metallic ferromagnets, much less is known about the relevance of different physical mechanisms governing AHE in insulators. As ferromagnetic insulators, but not metals, lend themselves to gatecontrol of electron spin polarization, understanding AHE in the insulating state is valuable from the point of view of spintronic applications. Among the mechanisms proposed in the literature for AHE in insulators, the one related to a geometric (Berry) phase effect has been elusive in past studies. The recent discovery of quantized AHE in magnetically doped topological insulators - essentially a Berry phase effect - provides strong additional motivation to undertake more careful search for geometric phase effects in AHE in the magnetic semiconductors. Here we report our experiments on the temperature and magnetic field dependences of AHE in insulating, strongly-disordered two-dimensional Mn delta-doped semiconductor heterostructures in the hopping regime. In particular, it is shown that at sufficiently low temperatures, the mechanism of AHE related to the Berry phase is favoured.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Voltage-controlled magnetic anisotropy in Fe|MgO tunnel junctions studied by x-ray absorption spectroscopy

In this study, voltage-controlled magnetic anisotropy (VCMA) in Fe|MgO tunnel junctions was investigated via the magneto-optical Kerr effect, soft x-ray absorption spectroscopy, and magnetic circular dichroism spectroscopy. The Fe|MgO tunnel junctions showed enhanced perpendicular magnetic anisotropy under external negative voltage, which induced charge depletion at the Fe|MgO interface. Despite the application of voltages of opposite polarity, no trace of chemical reaction such as a redox reaction attributed to O{sup 2−} migration was detected in the x-ray absorption spectra of the Fe. The VCMA reported in the Fe|MgO-based magnetic tunnel junctions must therefore originate from phenomena associated with the purely electric effect, that is, surface electron doping and/or redistribution induced by an external electric field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Local atomic structure and lattice defect analysis in heavily Co-doped ZnS thin films using X-ray absorption fine structure spectroscopy

Iin this work, X-ray absorption fine structure (XAFS) spectroscopy was used to address both the local atomic structure and the local electronic structure around Zn, Co, and S in Co-doped ZnS thin films. X-ray absorption near-edge spectroscopy (XANES) revealed changes in the strong pre-edge feature of the S K-edge spectra that depend on the Co concentration and are related to atomic bound-state transitions through hybridization between $3d$ transition metal and $sp$ host semiconductor electronic states. These changes reveal intrinsic effects, such as S vacancies and dopant effects. From the Co K-edge XANES spectra, substitution of Co 2+ into ZnS is observed. The local atomic structure around the dopant, obtained by XAFS spectroscopy, indicates a reduction of the Co–S bond length. Optical analysis shows deep absorption centers or intermediate states in the bandgap, ascribed to $d$-$d$ transitions in the Co atoms that modify the electronic band structure and cause a decrease in the bandgap as a function of Co concentration. This work provides direct evidence of dopant effects in heavily Co-doped ZnS, including bond distances and Debye-Waller factors, providing key elements to generate a realistic atomic structural model, which is crucial to understand the observed electronic properties of this material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Electron/Ion Transport Enhancer in High Capacity Li-Ion Battery Anodes

In this paper, magnetite (Fe 3 O 4 ) was used as a model high capacity metal oxide active material to demonstrate advantages derived from consideration of both electron and ion transport in the design of composite battery electrodes. The conjugated polymer, poly[3-(potassium-4-butanoate) thiophene] (PPBT), was introduced as a binder component, while polyethylene glycol (PEG) was coated onto the surface of Fe 3 O 4 nanoparticles. The introduction of PEG reduced aggregate size, enabled effective dispersion of the active materials and facilitated ionic conduction. As a binder for the composite electrode, PPBT underwent electrochemical doping which enabled the formation of effective electrical bridges between the carbon and Fe 3 O 4 components, allowing for more efficient electron transport. Additionally, the PPBT carboxylic moieties effect a porous structure, and stable electrode performance. Finally, the methodical consideration of both enhanced electron and ion transport by introducing a carboxylated PPBT binder and PEG surface treatment leads to effectively reduced electrode resistance, which improved cycle life performance and rate capabilities.

25 ENERGY STORAGE↗
DOE OSTI2022

Effects of substitutional Ga on the phonons of δ -phase Pu based on density functional theory calculations

The delta phase of Pu is stabilized by Ga doping, but the mechanism of this stabilization remains an open question. Density functional theory calculations focused on how Ga doping affects the phonons sheds some light on the phonons' contribution to the stabilization. Here, the calculated phonon modes of Ga-doped delta phase Pu fall into two distinct types: localized, high frequency Ga-dominated phonon modes, and Pu-dominated modes at lower frequencies. Increasing the Ga concentration has an effect on the Pu-dominated phonon modes opposite to that of compression: higher-frequency modes soften, and lower-frequency modes stiffen. The latter provides an indication that the stabilization mechanism is not due to a thermodynamic contribution from the phonons. Furthermore, the stiffened phonon modes include candidate modes that describe possible pathways into low-temperature phases, suggesting that doping with Ga could impede such pathways.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Tuning Thermal Stability through Dopant Size in Chemically Doped DPP–Thiophene Polymers

Molecular doping of conjugated polymers (CPs) is a key strategy for improving the performance of organic electronics devices, particularly thermoelectrics. Doped donor–acceptor (D–A) conjugated polymers, characterized by a tunable energy gap between the Fermi level and the transport band, show great promise in achieving high electrical conductivity (σ) while preserving a favorable Seebeck coefficient (S). Despite the promising performance enhancement of chemically doped D–A polymers, their thermal stability remains largely underexplored, a crucial consideration for the long-term operation of organic thermoelectric devices. In this study, we investigated the dopant size-dependent thermal stability of a diketopyrrolopyrrole-thiophene (DPP-T) D–A copolymer, utilizing two p-dopants: 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 TCNQ) and Mo(tfd-CO 2 Me) 3 . Temperature-dependent UV–vis–NIR spectroscopy revealed that DPP-T/F 4 TCNQ is more prone to dedoping under a high temperature thermal stress than DPP-T/Mo(tfd-CO 2 Me) 3 . Although the F 4 TCNQ doped polymer shows higher initial in-plane conductivity than its Mo(tfd-CO 2 Me) 3 counterpart, it undergoes a conductivity loss of more than an order of magnitude after annealing at 120 °C for 30 min. In contrast, the in-plane conductivity of DPP-T/Mo(tfd-CO 2 Me) 3 remains stable under the same thermal conditions. Thermogravimetric analysis ruled out dopant sublimation as a primary contributor to dedoping, leading us to attribute the conductivity loss in F 4 TCNQ-doped DPP-T to dopant phase separation and migration. This observation was further confirmed by X-ray scattering studies and nanoscale infrared microscopy and spectroscopy studies. This work could provide further insights into the thermal stability of doped conjugated polymers and suggests that incorporating bulkier dopants is an effective strategy to enhance the thermal robustness of doped DPP-type systems.

Conjugated polymers↗
DOE OSTI2016

Comparison of B{sub 2}O{sub 3} and BN deposited by atomic layer deposition for forming ultrashallow dopant regions by solid state diffusion

In this study, the authors investigated atomic layer deposition (ALD) of B{sub 2}O{sub 3} and BN for conformal, ultrashallow B doping applications and compared the effect of dopant-containing overlayers on sheet resistance (R{sub s}) and B profiles for both types of films subjected to a drive-in thermal anneal. For the deposition of B{sub 2}O{sub 3}, tris(dimethylamido)borane and O{sub 3} were used as coreactants and for the deposition of BN, BCl{sub 3} and NH{sub 3} were used as coreactants. Due to the extreme air instability of B{sub 2}O{sub 3} films, physical analysis was performed on B{sub 2}O{sub 3} films, which were capped in-situ with ∼30 Å ALD grown Al{sub 2}O{sub 3} layers. For the BN films, in-situ ALD grown Si{sub 3}N{sub 4} capping layers (∼30 Å) were used for comparison. From spectroscopic ellipsometry, a thickness decrease was observed after 1000 °C, 30 s anneal for the B{sub 2}O{sub 3} containing stack with 60 ALD cycles of B{sub 2}O{sub 3}, whereas the BN containing stacks showed negligible thickness decrease after the annealing step, regardless of the number of BN cycles tested. The postanneal reduction in film thickness as well as decrease in R{sub s} for the B{sub 2}O{sub 3} containing stack suggests that the solid state diffusion dopant mechanism is effective, whereas for the BN containing stacks this phenomenon seems to be suppressed. Further clarification of the effectiveness of the B{sub 2}O{sub 3} containing layer compared to the film stacks with BN was evidenced in backside secondary ion mass spectrometry profiling of B atoms. Thus, B{sub 2}O{sub 3} formed by an ALD process and subsequently capped in-situ followed by a drive-in anneal offers promise as a dopant source for ultrashallow doping, whereas the same method using BN seems ineffective. An integrated approach for B{sub 2}O{sub 3} deposition and annealing on a clustered tool also demonstrated controllable R{sub s} reduction without the use of a capping layer.

36 MATERIALS SCIENCE↗
NASA NTRS2008

Doping of BiScO3-PbTiO3 Ceramics for Enhanced Properties

High-temperature piezoelectrics are a key technology for aeronautics and aerospace applications such as fuel modulation to increase the engine efficiency and decrease emissions. The principal challenge for the insertion of piezoelectric materials is the limitation on upper use temperature which is due to low Curie-Temperature (T(sub c) and increasing electrical conductivity. BiScO3 -PbTiO3 (BS-PT) system is a promising candidate for improving the operating temperature for piezoelectric actuators due to its high TC (>400 C). Effects of Zr and Mn doping of the BS-PT ceramics have been studied and all electrical and electromechanical properties for Sc-deficient and Ti-deficient BS- PT ceramics are reported as a function of electrical field and temperature. Donor doping with Zr and Mn (in Sc deficient compositions) increased the DC-resistivity and decreased tan at all temperatures. Resulting ceramics exhibited saturated hysteresis loops with low losses and showed no dependence on the applied field (above twice the coercive field) and measurement frequency.

Sehirlioglu, Alp↗
DOE OSTI2017

Tribological behavior of N-doped ZnO thin films by metal organic chemical vapor deposition under lubricated contacts

N-doped ZnO thin films were deposited on 304L stainless steel through the pyrolysis of zinc acetate and ammonium acetate in different ratios at a temperature of 420 degrees C using metal organic chemical vapor deposition. Compositional and structural analyzes of the films were performed by using Rutherford backscattering spectroscopy and X-ray diffraction. The frictional behavior of the thin films and 304L stainless steel substrate was evaluated using a ball-on-flat configuration with reciprocating sliding under marginally lubricated and fully flooded conditions. Al alloy (2017) was used as ball counterface, while basestock synthetic polyalfaolefin oil (PAO10) without additives was used as lubricant. The flat and ball counterface surfaces were examined to assess the wear dimension and failure mechanism. Under marginally lubricated condition, N-doped ZnO thin films provided significant reduction in friction, whereas the films have minimal or no effect in friction under fully flooded condition. N-doped ZnO thin films showed a significant effect in protecting the ball counterface as wear volume was reduced compared with that of the substrate under the marginally lubricated condition. Under the fully flooded condition, with the exception of one of the films, the wear volume of the N-doped ZnO thin films ball reduced compared with that of the substrate. In all the ball counterfaces for N-doped ZnO thin films under both conditions, wear occurred through abrasive mechanism of various degrees or mild polishing. Thus, superfluous lubrication of N-doped ZnO thin films is not necessary to reduce friction and wear.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Transition-metal doped titanate nanowire photocatalysts boosted by selective ion-exchange induced defect engineering

Defect engineering through elemental doping is an efficient way to boost the performance of semiconductor photocatalysts. For this work, transition-metal (TM) doped titanate nanowires (TNWs) were prepared via ion-exchange over the titanate precursors and demonstrated for the Rhodamine B (RhB) degradation under ultraviolet (UV) light irradiation. The ion-exchange of selective ions (V 5+ , Cr 3+ , Ni 2+ , and Zn 2+ ) with protons from pristine TNWs resulted in the hierarchical meso-porosity of nanowires with large pores of ~5–20 nm by TM doping and small pores of ~3.6–4.5 nm inherited from pristine TNWs, which facilitates the mass transfer while maintaining high surface area and active sites. Meanwhile, the TM intercalation partially reduces the Ti 4+ to Ti 3+ and narrows the optical bandgap, which, together with oxygen vacancies and superoxide radicals from pristine TNWs, enhance the adsorption and photocatalytic degradation performance of RhB. This work helps to elucidate the effects of transition-metal doping and provides a rational strategy towards high performance titanate-based photocatalysts for efficient and sustainable wastewater treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Synthesis, thermal and electrical properties of Al-doped Bi{sub 4}V{sub 1.8}Cu{sub 0.2}O{sub 10.7}

Partial substitution of copper with aluminum in Bi{sub 4}V{sub 1.8}Cu{sub 0.2}O{sub 10.7} has led to the Bi{sub 4}V{sub 1.8}Cu{sub 0.2−x}Al{sub x}O{sub 10.7+x/2} solid solution. X-ray diffraction and thermal analysis have shown that the compounds with x=0.05 and x=0.10 are tetragonal with γ′ form of Bi{sub 4}V{sub 2}O{sub 11}, while the compound with x=0.15 is of β polymorph. The effect of Al{sup 3+} doping on electrical conductivity has been studied using Electrochemical Impedance Spectroscopy. The electrical conductivity of doped samples along with the amount of Al{sup 3+} has been studied by electrochemical impedance spectroscopy in the temperature range 250–700 °C. The slope changes observed in the Arrhenius plots agree with the microstructural transitions occurring in these compounds. The highest ionic conductivity values are obtained for the sample with x=0.05. - Graphical abstract: Arrhenius plots of the electrical conductivity of the of Bi{sub 4}V{sub 1.8}Cu{sub 0.2−x}Al{sub x}O{sub 10.7+x/2} compounds. Display Omitted.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Sol-gel preparation and characterization of Er3+ doped TiO2 luminescent nanoparticles

Highlights: • Sol-gel derived Er{sup 3+} doped TiO{sub 2} nanoparticles for potential use in solar cells and bio imaging. • Influence of Er{sup 3+} doping into TiO{sub 2} with various Er{sup 3+} concentration on structural, optical, and luminescence properties. • Down-and up-conversion luminescence behaviour of Er{sup 3+} doped titanium dioxide. - Abstract: The present paper reports on down-and up-conversion luminescence behaviour of sol-gel derived erbium doped titanium dioxide with anatase structure. Through combined structural, optical and electron microscope analysis, effective and influence of Er{sup 3+} doping into TiO{sub 2} lattice has been demonstrated using X-Ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and optical reflectance spectra. XRD results showed only anatase diffraction peaks of TiO{sub 2}, indicating the formation of a pure anatase phase even after Er{sup 3+} incorporation into TiO{sub 2} lattice. Selected Area Electron Diffraction (SAED) confirmed that the synthesized TiO{sub 2} nanoparticles are polycrystalline in nature which correlated well with XRD findings. Upon excitation at 320 nm, two down-conversion contributions at 378 nm and 435 nm attributed to indirect band gap and defect-related emissions, respectively were observed from both pure and Er{sup 3+} doped TiO{sub 2} nanoparticles. On the other hand, strong green up-conversion emission centred at 544 nm ascribed to {sup 4}S{sub 3/2 }→ {sup 4}I{sub 15/2} transition of Er{sup 3+} was observed under 980 nm laser excitation for all Er{sup 3+} doped TiO{sub 2} samples. This result analysis brings insight on understanding of structural, optical and luminescence properties of Er{sup 3+} doped TiO{sub 2} nanoparticles for use in solar cells and bio imaging devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Potassium doping: Tuning the optical properties of graphene quantum dots

Doping with hetero-atoms is an effective way to tune the properties of graphene quantum dots (GQDs). Here, potassium-doped GQDs (K-GQDs) are synthesized by a one-pot hydrothermal treatment of sucrose and potassium hydroxide solution. Optical properties of the GQDs are altered as a result of K-doping. The absorption peaks exhibit a blue shift. Multiple photoluminescence (PL) peaks are observed as the excitation wavelength is varied from 380 nm to 620 nm. New energy levels are introduced into the K-GQDs and provide alternative electron transition pathways. The maximum PL intensity of the K-GQDs is obtained at an excitation wavelength of 480 nm which is distinct from the undoped GQDs (375 nm). The strong PL of the K-GQDs at the longer emission wavelengths is expected to make K-GQDs more suitable for bioimaging and optoelectronic applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Local distortion driven magnetic phase switching in pyrochlore Yb 2 ( Ti 1 - x Sn x ) 2 O 7

While it is commonly accepted that the disorder induced by magnetic ion doping in quantum magnets usually generates a rugged free-energy landscape resulting in slow or glassy spin dynamics, the disorder/distortion effects associated with nonmagnetic ion sites doping are still illusive. Here, using AC susceptibility measurements, we show that the mixture of Sn/Ti on the nonmagnetic ion sites of pyrochlore Yb 2 ⁢(Ti 1-x⁢ Sn x ) 2⁢ O 7 induces an antiferromagnetic ground state despite both parent compounds, Yb 2 ⁢Ti 2 ⁢O 7 and Yb 2 ⁢Sn 2⁢ O 7 , order ferromagnetically. Local structure studies through neutron total scattering reveals the local distortion in the nonmagnetic ion sites and its strong correlation with the magnetic phase switching. Further, our study demonstrates the local distortion as induced by the nonmagnetic ion site mixture could be a new path to achieve magnetic phase switching, which has been traditionally obtained by external stimuli such as temperature, magnetic field, pressure, strain, light, etc.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2025

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗
DOE OSTI2020

Enhancement of Photoemission on p-Type GaAs Using Surface Acoustic Waves

We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current–voltage (I–V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Effect of granularity and annealing conditions on the magneto-resistance of the electron doped superconductor Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4}

A single phase polycrystalline sample of Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} has been synthesized and well characterized. Detailed studies on electrical resistivity behavior of this system as a function of temperature and magnetic field reveal interesting features attributable to the granularity effects. These features have been qualitatively understood based on the interplay of Josephson junction coupling and quasi particle tunneling which dictates the evolution of the observed temperature and field dependent resistivity behavior of Nd{sub 1.85}Ce{sub 0.15}CuO{sub 4} system. The studies also reveal significant changes with respect to annealing conditions, indicating that such compounds are very sensitive to annealing conditions. It has been observed that prolonged annealing in Argon atmosphere leads to a decrease in normal state resistivity. This is associated with a decrease in the S-I-S type Josephson tunnel junctions perhaps due to improved inter-granular coupling, nevertheless they could not be completely eliminated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗