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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,243 records · Page 69
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Polarization Switching on the Open Surfaces of the Wurtzite Ferroelectric Nitrides: Ferroelectric Subsystems and Electrochemical Reactivity

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is associated with the change of the effective polarity at the surfaces and interfaces from N‐to‐M terminated, suggesting strong coupling between ferroelectric and chemical phenomena. Phenomenologically, macroscopic studies demonstrate the presence of complex time dependent phenomena including wake‐up. Here, in this study, the polarization switching using the multidimensional high‐resolution piezoresponse force microscopy (PFM) and spectroscopy is explored, detecting both the evolution of induced ferroelectric domain, electromechanical response, and surface deformation during first‐order reversal curve measurements. The presence of two weakly coupled ferroelectric subsystems are demonstrated and the bias‐induced electrochemical reactivity. The observed behaviors are very similar to the recent studies of other wurtzite system but additionally include electrochemical reactivity, suggesting the universality of these behaviors for the wurtzite binary ferroelectrics. These studies suggest potential of high‐resolution multimodal PFM spectroscopies to resolve complex coupled polarization dynamics in materials. Furthermore, these PFM based studies are fully consistent with the recent electron microscopy observations of the shark‐teeth like ferroelectric domains in nitrides. Hence, it is believed that these studies establish the universal phenomenological picture of polarization switching in binary wurtzite.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Uranium Doped Gallium Nitride Epitaxial Thin Films

Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.

36 - MATERIALS SCIENCE↗
DOE OSTI2024

Growth Phenomena and Bandgap Shift in Melt-Grown β-(In x Ga 1- x ) 2 O 3 Alloys

β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor with great promise for power electronics and optoelectronics. Alloys in the In 2 O 3 -Ga 2 O 3 system are interesting for optoelectronic applications, particularly where bandgap tuning is desirable. Herein, β-(In x Ga 1- x ) 2 O 3 alloys with target compositions x = 0.025 or 0.10 are grown from the melt using the Czochralski and vertical gradient freeze techniques. Growth with 10 mol% In yields only small, needle-like crystals, while 2.5 mol% In allows growth of centimeter-sized single crystals. A substantial degree of indium segregation is unveiled by spatial measurements of lattice parameters and the bandgap. The bandgap decreases by a maximum of 0.28 eV in the case of the highest In content crystals. Z-contrast transmission electron microscopy confirms a solely octahedral coordination of In in the β-Ga 2 O 3 lattice. With indium concentrations higher than 2.5 mol%, samples contain micron-scale voids that impart a dark coloration. All measured crystals are electrically conductive, with carrier concentrations varying 10 16 –10 17 cm -3 depending upon the location of the sample in the growth. Lastly, a unique luminescence with unknown origin centered around 2.0 eV is revealed by photoluminescence spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Addressing technical challenges in 100% variable inverter-based renewable energy power systems

Rapidly increasing levels of variable inverter-based renewable energy sources are quickly changing electric power systems and prompting questions about how the systems will be operated when renewable generation becomes the dominant technologies. Here, we review the status of this shifting paradigm in power systems throughout the world. We then review the implications of this shift, focusing on the rising challenges, and we provide an overview and technology-readiness classifications of some proposed mitigation strategies. Finally, we highlight outstanding questions that will require solutions to reach these ultrahigh shares of variable inverter-based renewable energy sources.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2016

Offshore Wind Energy

In 1991, the Vindeby Offshore Wind Farm, the first offshore wind farm in the world, started feeding electricity to the grid off the coast of Lolland, Denmark. Since then, offshore wind energy has developed from this early experiment to a multibillion dollar market and an important pillar of worldwide renewable energy production. Unit sizes grew from 450 kW at Vindeby to the 7.5 MW-class offshore wind turbines (OWT ) that are currently (by October 2014) in the prototyping phase. This chapter gives an overview of the state of the art in offshore wind turbine (OWT) technology and introduces the principles of modeling and simulating an OWT. The OWT components -- including the rotor, nacelle, support structure, control system, and power electronics -- are introduced, and current technological challenges are presented. The OWT system dynamics and the environment (wind and ocean waves) are described from the perspective of OWT modelers and designers. Finally, an outlook on future technology is provided. The descriptions in this chapter are focused on a single OWT -- more precisely, a horizontal-axis wind turbine -- as a dynamic system. Offshore wind farms and wind farm effects are not described in detail in this chapter, but an introduction and further references are given.

17 WIND ENERGY↗
DOE OSTI2019

Thermomechanical Modeling of High-Temperature Bonded Interface Materials

In an automotive power electronics package, bonded interface materials play a critical role in providing a smooth heat dissipation path from the device to the coolant. However, these materials are susceptible to failure when the package gets exposed to repeated changes in its thermal environment and internal temperature variations. Under these thermal conditions, the coefficient of thermal expansion mismatch between the different component layers results in thermally induced stresses and consequently the delamination of the material from its adjoining surfaces or crack initiation and propagation within the material. Thermomechanical modeling offers a path to study the complex nature of these bonded materials, guides their design and selection, and, in conjunction with experimental results, plays an important role in predicting their lifetime. In this chapter, two modeling strategies - similar in approach and implementation but different in the underlying theory - are discussed in the context of high-temperature bonded materials. In addition, a short review of sintered silver is provided, as it is widely seen as a potentially promising and reliable bonded material for high-temperature applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Cantilever testing of sintered-silver interconnects

Cantilever testing is an underutilized test method from which results and interpretations promote greater understanding of the tensile and shear failure responses of interconnects, metallizations, or bonded joints. The use and analysis of this method were pursued through the mechanical testing of sintered-silver interconnects that joined Ni/Au-plated copper pillars or Ti/Ni/Ag-plated silicon pillars to Ag-plated direct bonded copper substrates. Sintered-silver was chosen as the interconnect test medium because of its high electrical and thermal conductivities and high-temperature capability—attractive characteristics for a candidate interconnect in power electronic components and other devices. Deep beam theory was used to improve upon the estimations of the tensile and shear stresses calculated from classical beam theory. The failure stresses of the sintered-silver interconnects were observed to be dependent on test-condition and test-material-system. In conclusion, the experimental simplicity of cantilever testing, and the ability to analytically calculate tensile and shear stresses at failure, result in it being an attractive mechanical test method to evaluate the failure response of interconnects.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Failure stress comparison of different pairings of Ag-plating and reflow-oven-processed pressureless-sintered-Ag interconnects

Here, sintered-silver is a candidate material to supplant solders for interconnects in power electronic packaging for many reasons including its desirably high electrical and thermal conductivities and compliance to Restriction of Hazardous Substances (RoHS) guidelines. The shear failure stress of interconnects though is limited by whatever constituent is the weakest, and that includes any employed plating. In the present study, silver-platings were processed electrolytically, electrolessly, and through sputter deposition and their influence on the entire “interconnect system” shear strength was examined. Test sets employing gold plating and no plating were included for comparison and to aid interpretation. Ambient-air, reflow-oven-processed, pressureless-sintered-silver interconnects were identically fabricated with all plating test sets. It was found that all considered silver-plating methods produced consistently strong (characteristic failure stresses > 55 MPa) sintered-silver interconnects. Because failures tended to be adhesive in all six sets, differences in failure stress among the silver-plated sets and the gold-plated or unplated sets were likely due to differences in the adhesive strength of the sintered silver with silver-plating, gold-plating, or direct bonding with copper.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of Gold on the Microstructural Evolution and Integrity of a Sintered Silver Joint

There is a need for next-generation, high-performance power electronic packages and systems employing wide band gap devices to operate at high temperatures in automotive and electric grid applications. Sintered silver joints are currently being evaluated as an alternative to Pb-free solder joints. Of particular interest is the development of joints based on silver paste consisting of nanoscale or micron scale particles that can be processed without the application of an external pressure. Microstructural evolution at the interface of a pressureless sintered silver joint formed between a SiC die with a Ti/Ni/Au metallization and an Active Metal Brazed substrate with Ag metallization at 250 °C was evaluated using Scanning Electron Microscopy, X-ray microanalysis, and X-ray Photo Electron Spectroscopy. Results from Focused Ion Beam cross-sections show that during sintering, the pores in the sintered region close to the Au layer tend to be smaller and are oriented predominantly with their longer dimension oriented parallel to the interface. With further densification, this results in the alignment of small pores parallel to the interface, creating a path for easy crack propagation. Lastly, X-ray microchemical analyses results confirm interdiffusion between Au and Ag and that a region with poor mechanical strength is formed at the edge of this region of interdiffusion.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Evolution of the nanoporous microstructure of sintered Ag at high temperature using in-situ X-ray nanotomography

Silver pastes sintering is a potential candidate for die bonding in power electronic modules. The joints, obtained by sintering, exhibit a significant pore fraction, thus reducing the density of the material compared to bulk silver. The mechanical properties (Young's modulus, yield strength and ultimate tensile stress) are then drastically altered. However, while careful analysis of the nanoporous structure has been reported in 2D, little is known about its quantitative spatial evolution during thermal aging and more specifically during temperature jumps endured by the assembly during operation. High temperature evolutions of the 3D nanoporous structure have been observed in-situ using a heater fitted into the beamline 6-2c at SLAC-SSRL. Segmentation of the porosity and subsequent statistical analysis of the tomographic dataset reveal a complex evolution of the porous nanostructure including growth, separation and coalescence at a constant density. Such an analysis provides insight into the microstructural evolution of sintered nanoporous Ag joints in-service.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Hierarchical thermal-conductive polymer nanocomposites for thermal management

Managing heat in electrical conductors is a major challenge to meet the demands for sustainable energy use and electrical reliability, most notably power electronics and energy-critical electrical machines. Achieving such disparate functionalities, such as high temperature thermal and electrical reliability, require rational design and manufacturing of thermal conductor material and its hierarchical structures. Here we present hierarchical thermal-conductive nanocomposites, consisting of nanostructured ceramic conformal coating and aligned ultrahigh molecular weight polyethylene fiber, to tailor heat dissipation in electric conductors. The hybrid aligned thermal interface exhibits a highly desirable temperature dependent anisotropic high thermal conductivity with 0.98W m –1 K –1 and dielectric strength with 3.4. In addition, electrically insulating thermal interfaces demonstrate high-performing and reliable electrical systems under the dynamic load conditions. The surface temperature of heterogeneous ceramic-polymer encapsulated conductor is 17.8 °C lower than that of polymer-encapsulated conductor at the same electrical load. Consequently, the findings shown here hold great promises for directing heat extraction in electrical machine systems, advancing thermal management for emerging electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Enhanced dielectric insulation of biaxially oriented high temperature polyester films for capacitive energy storage

Biaxially oriented polypropylene (BOPP) films are widely used in dielectric capacitors due to their ultralow loss, high breakdown strength, and long lifetime. However, their poor temperature tolerance limits applications in emerging high-temperature environments such as wide-band-gap power electronics in electric vehicles. Here, we report significantly enhanced dielectric insulation properties of biaxially oriented poly(ethylene 2,6-naphthalate) (BOPEN) films compared to biaxially oriented poly(ethylene terephthalate) (BOPET) films, despite their similar semicrystalline morphologies. BOPEN exhibits higher DC and AC breakdown strengths and markedly extended lifetimes at elevated temperatures. For instance, at 120 °C, the DC Weibull lifetime of BOPEN exceeded that of BOPET by over two orders of magnitude and even surpassed that of BOPP. Through comprehensive analyses—leakage current, electric displacement-electric field loops, and thermally stimulated depolarization current—we attribute this superior performance to suppressed homocharge injection and conduction losses, enabled by the rigid naphthalene-based backbone in BOPEN that reduces dipole mobility and chain polarity. These findings underscore the potential of BOPEN as a next-generation polymer dielectric for high-temperature capacitor applications.

25 ENERGY STORAGE↗
DOE OSTI2024

Capillary-Enhanced Two-Phase Micro-Cooler Using Copper-Inverse-Opal Wick with Silicon Microchannel Manifold for High-Heat-Flux Cooling Application

In this work, we demonstrate a two-phase capillary-fed boiling micro-cooler that consists of a ~ 25-..mu..m-thick copper inverse opal (CIO) porous wicking structure for high-heat-flux boiling and a silicon 3D-manifold for distributed liquid delivery and vapor extraction across a 0.5 cm x 0.5 cm heated area. At low inlet water mass flow rates of 1.5 to 1.9 g(min)-1, the micro-cooler displays nearly two-phase boiling with exit vapor quality ~ 1 and a high critical heat flux (CHF) of 253 to 320 W cm-2 with low superheat of ~ 10 degrees C resulting in a thermal resistance of boiling ~ 0.025 cm2 degrees C W-1 or heat transfer coefficient of 0.4 MW m-2 degrees C-1. For higher flow rates of 5, 10, and 15 g(min)-1, the micro-cooler exhibits a hybrid single-phase and two-phase cooling regime where the contribution of the sensible heat (single-phase) cooling is linearly added to that of the two-phase cooling. For the highest flow rate of 15 g(min)-1, the CHF is increased to ~ 500 W cm-2 resulting in an overall thermal resistance of ~ 0.18 cm2 degrees C W-1. However, the two-phase heat transfer effectiveness, which estimates the utilization level of the inlet mass flow rate for two-phase boiling, is reduced to ~ 0.11. To achieve the best cooling system performances, the micro-cooler must operate entirely within the two-phase boiling regime (exit vapor quality or two-phase heat transfer effectiveness ~ 1). Ideally, the "coolant" should be delivered near its saturation temperature (~ 100 degrees C for water), which provides significant advantages for the energy-efficient operation of data centers and power electronics. We present detailed analysis with Infrared and high speed camera images at various inlet flow rates and heat fluxes to understand complex heat transfer in the micro-cooler. Furthermore, a conjugate thermofluidic simulation model, which incorporates the physics of capillary-fed boiling in a porous copper layer, agrees well with the experimental data.

capillary-enhanced boiling↗
DOE OSTI2021

On optical properties and scintillation performance of emerging Ga 2 O 3 : Crystal growth, emission mechanisms and doping strategies

As an emerging ultra-wide bandgap compound semiconductor, Ga 2 O 3 has attracted rapidly growing interest due to its unique physical properties for harsh condition applications. Compared to Ga 2 O 3 ’s electrical-characteristic based uses, such as power electronics, photodetectors and solar cells, a much less explored area for Ga 2 O 3 is its promising optical properties and its related scintillation capabilities. Undoped Ga 2 O 3 is a strong scintillator with excellent scintillation characteristics such as fast decay constants and encouraging light yield which is comparable to that of the classic Bi 4 Ge 3 O 12 (BGO) scintillator. The scintillation capability of Ga 2 O 3 can be precisely tuned via a series of approaches including systematic crystal growth control, post-growth annealing, targeted doping, and optimization of operation temperature. Here we summarize exciting progress of Ga 2 O 3 scintillators which have been pursued over the past few years. Our efforts cover a series of growth techniques of Ga 2 O 3 materials as well as discussion of emission mechanisms. Here we dedicate a targeted portion toward the doping strategies to improve the performance of Ga 2 O 3 . A detailed analysis is provided to compare the impact of different dopants. Through these efforts, we hope to provide useful perspectives to help accelerate the development of high performance Ga 2 O 3 scintillators.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Assessing the vulnerability of solar inverters to EMPs: Port testing, PCI modeling, and protection strategies

Renewable energy sources are becoming an ever-larger contributor to the power grid. These renewable energy sources depend upon the power electronic devices, specifically inverters, being essential for connecting Photovoltaic (PV) generation to the grid. However, the Electromagnetic Pulses (EMPs) caused by the high-altitude nuclear explosions can generate fast broad-band pulses with nanosecond rise time, potentially causing damage or destruction to electronic components. To assess the vulnerability of PV inverters to high-altitude EMPs, the port testing and Pulsed Current Injection (PCI) modeling schemes are proposed based on the port impedance analysis. Wide-band frequency measurements are achieved by fusing impedance results from three vector network analyzers. Then, a PCI model is used to simulate the induced response to EMP, with two typical immunity levels of EC5 and EC8 tested. Here, the experiment successfully excites the induced voltage and current under EMP, where the voltage and current can reach 1500V/40A and 8000V/150Aunder EC5 andEC8, respectively. The port vulnerability analysis results demonstrate that only some ports can survive under EC5. To defend against the impact of EMP, three protection strategies are discussed.

42 ENGINEERING↗
DOE OSTI2019

Economics and Challenges of Li-Ion Battery Recycling from End-of-Life Vehicles

This study sheds the lights on current and future recycling methods for spent Li-ion batteries from retired vehicles. The demands of Li-ion batteries for automotive applications and power electronics are expected to increase significantly in the next 15-20 years. Recycling cathode materials from the end of life batteries is not only providing a sustainable source of materials, but also offers an economic alternative to some of the high value elements such as cobalt and nickel. Insights and directions for future R&D will be presented in this paper based on the results of the supply chain and techno-economic analyses made for end-of-life li-ion batteries.

25 ENERGY STORAGE↗