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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

Wu, Liangjin↗
NASA NTRS2010

Effect of Post-HALT Annealing on Leakage Currents in Solid Tantalum Capacitors

Degradation of leakage currents is often observed during life testing of tantalum capacitors and is sometimes attributed to the field-induced crystallization in amorphous anodic tantalum pentoxide dielectrics. However, degradation of leakage currents and the possibility of annealing of degraded capacitors have not been investigated yet. In this work the effect of annealing after highly accelerated life testing (HALT) on leakage currents in various types of solid tantalum capacitors was analyzed. Variations of leakage currents with time during annealing at temperatures from 125 oC to 180 oC, thermally stimulated depolarization (TSD) currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. Annealing resulted in a gradual decrease of leakage currents and restored their initial values. Repeat HALT after annealing resulted in reproducible degradation of leakage currents. The observed results are explained based on ionic charge instability (drift/diffusion of oxygen vacancies) in the tantalum pentoxide dielectrics using a modified Schottky conduction mechanism.

Teverovsky, Alexander↗
NASA NTRS2019

The Power of Pausing: Advancing Understanding of Thermalization in Experimental Quantum Annealers

We investigate alternative annealing schedules on the current generation of quantum annealing hardware (the D-Wave 2000Q), which includes the use of forward and reverse annealing with an- intermediate pause. This work provides new insights into the inner workings of these devices (and quantum devices in general), particular into how thermal effects govern the system dynamics. We show that a pause mid-way through the anneal can cause a dramatic change in the output distribution, and we provide evidence suggesting thermalization is indeed occurring during such a pause. We demonstrate that upon pausing the system in a narrow region shortly after the minimum gap, the probability of successfully finding the ground state of the problem Hamiltonian can be increased by several orders of magnitude. We relate this effect to relaxation (i.e. thermalization) after diabatic and thermal excitations that occur in the region near to the minimum gap. For a set of large-scale problems of up to 500 qubits, we demonstrate that the distribution returned from the annealer very closely matches a (classical) Boltzmann distribution of the problem Hamiltonian, albeit one with a temperature at least 1.5 times higher than the (effective) temperature of the device. Moreover, we show that larger problems are more likely to thermalize to a classical Boltzmann distribution.

Marshall, Jeffrey↗
DOE OSTI2023

Solving larger maximum clique problems using parallel quantum annealing

Quantum annealing has the potential to find low energy solutions of NP-hard problems that can be expressed as quadratic unconstrained binary optimization problems. However, the hardware of the quantum annealer manufactured by D-Wave Systems, which we consider in this work, is sparsely connected and moderately sized (on the order of thousands of qubits), thus necessitating a minor-embedding of a logical problem onto the physical qubit hardware. The combination of relatively small hardware sizes and the necessity of a minor-embedding can mean that solving large optimization problems is not possible on current quantum annealers. In this research, we show that a hybrid approach combining parallel quantum annealing with graph decomposition allows one to solve larger optimization problem accurately. We apply the approach to the Maximum Clique problem on graphs with up to 120 nodes and 6395 edges.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Computing molecular excited states on a D-Wave quantum annealer

Abstract The possibility of using quantum computers for electronic structure calculations has opened up a promising avenue for computational chemistry. Towards this direction, numerous algorithmic advances have been made in the last five years. The potential of quantum annealers, which are the prototypes of adiabatic quantum computers, is yet to be fully explored. In this work, we demonstrate the use of a D-Wave quantum annealer for the calculation of excited electronic states of molecular systems. These simulations play an important role in a number of areas, such as photovoltaics, semiconductor technology and nanoscience. The excited states are treated using two methods, time-dependent Hartree–Fock (TDHF) and time-dependent density-functional theory (TDDFT), both within a commonly used Tamm–Dancoff approximation (TDA). The resulting TDA eigenvalue equations are solved on a D-Wave quantum annealer using the Quantum Annealer Eigensolver (QAE), developed previously. The method is shown to reproduce a typical basis set convergence on the example $$\hbox {H}_2$$ H 2 molecule and is also applied to several other molecular species. Characteristic properties such as transition dipole moments and oscillator strengths are computed as well. Three potential energy profiles for excited states are computed for $$\hbox {NH}_3$$ NH 3 as a function of the molecular geometry. Similar to previous studies, the accuracy of the method is dependent on the accuracy of the intermediate meta-heuristic software called qbsolv.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS2016

Applying Simulated Annealing to Problems in Model-Based Diagnosis

Generating all diagnoses is computationally intractable. Therefore, many of the state-of-the-art approaches are incomplete. Quantum computers may however offer a solution. The first commercially available quantum computer is being used to minimize polynomials that are difficult for classical simulated annealing but easy for quantum annealing. All problems in Model-based Diagnosis (MBD) can be transformed into a polynomial minimization problem, allowing one to apply a quantum algorithm called quantum annealing to solve MBD problems. To better understand the need for this quantum approach, we designed two simulated annealingdiagnostic algorithms tailored to run on a polynomial representation of MBD. These algorithms differ on their policy for random neighborhood variable selection. In addition, enhanced metrics were devised to provide more diagnostic coverage. Finally, these two simulated annealing algorithms were analyzed and empirically evaluated and compared against state-of-the-art probabilistic methods for MBD such as SAFARI using ISCAS-85.

Simulated annealing↗
DOE OSTI2022

Post‐Annealing Treatment on Hydrothermally Grown Antimony Sulfoselenide Thin Films for Efficient Solar Cells

Herein, antimony sulfoselenide (Sb 2 (S, Se) 3 ) thin‐film solar cells are fabricated by a hydrothermal method followed by a post‐deposition annealing process at different temperatures and the impact of the annealing temperature on the morphological, structural, optoelectronic, and defect properties of the hydrothermally grown Sb 2 (S, Se) 3 films is investigated. It is found that a proper annealing temperature leads to high‐quality Sb 2 (S, Se) 3 films with large crystal grains, high crystallinity, preferred crystal orientation, smooth and uniform morphology, and reduced defect density. These results show that suppressing deep‐level defects is crucial to enhance solar cell performance. After optimizing the annealing process, Sb 2 (S, Se) 3 solar cells with an improved power conversion efficiency 2.04 to 8.48% are obtained.

14 SOLAR ENERGY↗
DOE OSTI2023

Athermal annealing of pre-existing defects in crystalline silicon

Systematic investigations of electronic energy loss (S e ) effects on pre-existing defects in crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to anneal pre-existing defects, leading to successful implementation of this technology in the fabrication of Si-based devices. In this regard, the S e effects on nonequilibrium defect evolution in pre-damaged Si single crystals at 300 K has been investigated using intermediate-energy ions (12 MeV O and Si ions) that interact with the pre-damaged surface layers of Si mainly by ionization, except at the end of their range where the nuclear energy loss (S n ) is no longer negligible. Furthermore, under these irradiation conditions, experimental results and molecular dynamics simulations have revealed that pre-existing disorder in Si can be almost fully annealed by subsequent irradiation with intermediate-energy incident ions with S e values as low as 1.5–3.0 keV/nm. Selective annealing of pre-existing defect levels in Si at room temperature can be considered as an effective strategy to mediate the transient enhanced diffusion of dopants in Si. This approach is more desirable than the regular thermal annealing, which is not compatible with the processing requirements that fall below the typical thermal budget.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Forming more and sharper sensing protrusions on graphene-based electrodes through annealing

A better understanding of the microstructure, physicochemical properties, and sensing behavior of an electrode is critical in developing quick, high sensitivity, and robust electrochemical sensors. Here, in this study, a single electrode was fabricated with self-prepared graphene ink through a drop-cast process followed with a subsequent annealing treatment. The graphene ink-based electrodes were characterized through AFM, contact angle, FTIR, impedance spectra, Raman, and SEM to understand annealing treatment effects. The dynamic response of the electrode to humidity, and vapors of ethanol, propanol, or acetone was measured using a four-point probe station in a closed chamber. The annealing treatment increased the conductivity of the electrode and improved its sensing performance by forming more and sharper protrusions on the electrode surface. These unique surface protrusions suggest that the annealed graphene ink-based electrodes hold great potential in developing high-performance electrochemical sensors.

42 ENGINEERING↗
DOE OSTI2022

A model of thermal creep and annealing in finite domains based on coupled dislocation climb and vacancy diffusion

Here, we develop a framework to investigate thermal creep and annealing in finite domains, where the climb motion of discrete dislocations is coupled to the diffusion of a continuum vacancy field. The model is first formulated in a continuum finite-deformation setting. All governing equations and boundary conditions are obtained from a unified irreversible thermodynamics principle. The resulting model couples a mechanical boundary value problem (BVP), a vacancy diffusion BVP, and the climb and glide motion of the discrete dislocation network within the crystal. The framework is then linearized for implementation in three-dimensional (3D) discrete dislocation dynamics (DDD) simulations for arbitrary anisotropic crystals. A solution scheme is developed based on the superposition principle, which is imposed weakly on the dislocation network to obtain a Galerkin solution for the nodal climb velocities. The framework includes diffusional (Nabarro–Herring) creep deformation as well as dislocation creep by climb-assisted-glide. The method is applied to simulate the annealing of vacancy loops in Al, with good agreement to experimental measurements by Silcox and Hirsch. We further consider the effects of annealing under stress, and of the proximity of the vacancy loops to loaded and free boundaries Simulations in polycrystalline materials are carried out to highlight the effects of the grain size on dislocation climb and vacancy loop annealing. The method is also applied to estimate the creep rate due to climb-assisted glide of jogged-screw dislocations in γ-TiAl, and results are compared to experiments by Viswanathan et al. Finally, we discuss the effects of uniaxial and hydrostatic stresses on the two diffusive deformation pathways of the material, namely Nabarro–Herring creep and dislocation climb.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Microstructural changes in nuclear graphite induced by thermal annealing

Irradiation-induced property change in nuclear graphite is particularly important when considering the in-service lifetimes of graphite components. In other works, it has been shown that annealing of irradiated graphite above the irradiation temperature may heal atomic-level defects and thus reverse some amount of physical property change. In this work, virgin nuclear graphite IG-110 was annealed at 2500°C to observe any microstructural changes due solely to high-temperature thermal annealing. We report the results shown in this study suggest that fullerene-like defects will arise due to thermal annealing near graphitization temperature. Consequently, such defects may directly contribute to non-recoverable physical property change which has previously been observed in irradiated nuclear graphites.

36 MATERIALS SCIENCE↗
DOE OSTI2023

The effect of annealing on kink band formation in Ag/Fe nanolaminates

Kink banding is a common, though not well understood, failure mechanism in anisotropic materials such as nano metallic laminates (NMLs). In this work, we investigate the effect of annealing on kink band (KB) formation in Ag/Fe NMLs prepared by accumulative roll bonding (ARB) using in situ micropillar compression, scanning/transmission electron microscopy (S/TEM), and transmission Kikuchi diffraction (TKD) analyses. Our results show that annealing increases the KB initiation strain, decreases the probability of KB formation, and decreases the load drop magnitude accompanying kink banding in Ag/Fe NMLs. Post-compression analyses reveal that annealing facilitates more uniform deformation of pillars and affects the formation of geometrically necessary grain boundaries (GNBs) near the kink band boundary (KBB). Compared to its as-rolled counterpart, annealed Ag/Fe has wider KBs with blunter KBBs.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Defect engineering in nickel via electrodeposition following low temperature annealing

Electrodeposited nickel coatings are characterized by high densities of crystalline defects including dislocations, growth twins, and hydrogen bubbles/voids, arising from the non-equilibrium nature of deposition. While these metastable features influence as-deposited properties, their evolution under low temperature annealing remains unexplored. Here, in this study, we demonstrate that low temperature annealing (200 °C) induces significant microstructural rearrangement without grain growth, enabling defect engineering through thermally assisted dislocation motion and twin boundary migration. Notably, we observe faceted twin boundaries and dislocation organization into extended networks, which have been rarely reported under such annealing conditions. These transformations are attributed to hydrogen-assisted defect mobility, facilitated by the release or redistribution of hydrogen trapped during deposition. These structural transformations correlate with a significant enhancement in mechanical properties, including a twofold increase in yield strength and improved ductility. Our findings highlight the role of trapped hydrogen in mediating low-temperature defect mobility and twin boundary evolution, offering a unique pathway for microstructural tuning of metallic coatings through controlled annealing.

36 - MATERIALS SCIENCE↗
DOE OSTI2020

Effects of post-deposition CdCl 2 annealing on electronic properties of CdTe solar cells

The effects of post-deposition CdCl 2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl 2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380 to 430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. Here, the best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

14 SOLAR ENERGY↗
DOE OSTI2021

Enhanced Guest@MOF Interaction via Stepwise Thermal Annealing: TCNQ@Cu 3 (BTC) 2

Confinement of guest molecules in porous materials such as metal organic frameworks (MOFs) promises to deliver emergent properties separate from those of the individual components. Understanding the confinement mechanism is therefore important for the development of new synthesis routes that adjust MOF properties for specific applications. In this work, we developed a new synthetic method to confine guest molecules into MOF pores through a stepwise thermal annealing process, wherein the confinement of 7,7,8,8-tetracyanoquinodimethane (TCNQ) guest molecules into Cu 3 (BTC) 2 (BTC = benzene-1,3,5-tricarboxylic acid) MOF host is used as an example of how novel materials can be created with new physical properties. The stepwise thermal annealing process includes 1) an activation process of pristine Cu 3 (BTC) 2 MOF to maximizes the TCNQ guest loading in the MOF host by effectively removing the residual solvents and 2) post-annealing of the TCNQ infiltrated MOF to enhances the interaction of the confined guest molecules with the MOF host. Obtained experimental results based on thermogravimetric analysis, N 2 gas adsorption, electron microscopy, X-ray diffraction and infrared absorption, combined with density functional theory calculations provide evidence that the use of a stepwise thermal annealing process yields enhancements in the guest loading, packing and interaction between the TCNQ guest and the MOF host. The new hybrid TCNQ@Cu 3 (BTC) 2 system is stable and shows no significant signs of structural degradation even after submersion in water. This is due to the presence of significantly stronger interactions of TCNQ with the frame-work metal ions compared to those of the water molecules competing for the same framework binding sites. It was also found that TCNQ@Cu 3 (BTC) 2 system maintains a significant CO 2 and CH 4 adsorption potential compared to the pristine MOF. The synthetic route developed in this work yields novel guest@MOF hybrid systems that will be useful for many MOF-based applications such as gas separations and chemical sensors performed under humid conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Rapid Identification of Synthetic Routes to Functional Metastable Phases Using X-ray Probed Laser Anneal Mapping (XPLAM) Time-Temperature Quench Maps

Many material systems have known or predicted functional phases that are metastable at standard temperature and pressure. While substantial advances have been made in the high-throughput and combinatorial synthesis of materials with a range of stoichiometries, investigation of thermal processing remains largely the domain of iterative uniform anneals or static gradients. Here we develop X-ray probed laser anneal mapping (XPLAM), a high throughput technique coupling spatially resolved X-ray diffraction with microsecond to millisecond laser gradient anneals to produce temperature–dwell–transformation (TDT) diagrams of the phase as a function of quench time and temperature. In addition to showing regimes where specific metastable phases form preferentially, TDT diagrams provide insight into the submillisecond kinetics of solid–solid phase transitions. This is a unique tool for mapping reaction pathways for metastable phases. As a first demonstration of XPLAM, we study Bi2O3, which has a rich set of polytypes, including the d-phase with an exceptionally high oxygen ion conductivity. We demonstrate the first annealing-driven synthesis of room temperature d-Bi2O3. We expect XPLAM to prove a powerful technique for rapid identification of synthetic routes to metastable phases and to generate the exhaustive data sets required for machine learning-guided exploration of materials processing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Effect of Annealing on Direct Recycled NMC Cathodes

A substantial number of electric vehicle batteries are poised to reach end-of-life conditions in the next decade. Direct recycling has advantages over typical recycling processes because it preserves the chemical structure of the material. One key step of direct recycling materials like nickel manganese cobalt oxide (NMC) cathodes is relithiation, which includes replacing the depleted lithium inventory in the cathode and annealing the material to fix crystallographic degradation. This work uses multiple characterization techniques (synchrotron X-ray diffraction, Ni X-ray absorption near edge structure, scanning transmission electron microscopy) to understand the lithiation mechanism of degraded and chemically relithiated NMC 622. Despite the necessary reconstruction after relithiation being limited to the surface of the degraded NMC 622, a high annealing temperature of 720 °C is still necessary to restore the NMC 622 structure back to pristine condition after relithiation. This work also finds that treating degraded NMC 622 with an annealing step is sufficient to restore key electrochemical and structural properties, other essential features of pristine NMC 622 material such as particle porosity and morphology are largely unaffected. Understanding the effect of this annealing step has important implications on defining the degree of success of any given direct recycling strategy.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Transient Storage Model Parameter Optimization Using the Simulated Annealing Method

Hyporheic exchange in streams is critical to ecosystem functions such as nutrient cycling along river corridors, especially for slowly moving or small stream systems. The transient storage model (TSM) has been widely used for modeling of hyporheic exchange. TSM calibration, for hyporheic exchange, is typically used to estimate four parameters, including the mass exchange rate coefficient, the dispersion coefficient, stream cross-sectional area, and hyporheic zone cross-sectional area. Prior studies have raised concerns regarding the non-uniqueness of the inverse problem for the TSM, that is, the occurrence of different parameter vectors resulting in TSM solution that reproduces the observed in-stream tracer break through curve (BTC) with the same error. This leads to practical non-identifiability in determining the unknown parameter vector values even when global-optimal values exist, and the parameter optimization becomes practically non-unique. To address this problem, we applied the simulated annealing method to calibrate the TSM to BTCs, because it is less susceptible to local minima-induced non-identifiability. A hypothetical (or synthetic) tracer test data set with known parameters was developed to demonstrate the capability of the simulated annealing method to find the global minimum parameter vector, and it identified the “hypothetically-true” global minimum parameter vector even with input data that were modified with up to 10% noise without increasing the number of iterations required for convergence. The simulated annealing TSM was then calibrated using two in-stream tracer tests conducted in East Fork Poplar Creek, Tennessee. In conclusion, simulated annealing was determined to be appropriate for quantifying the TSM parameter vector because of its search capability for the global minimum parameter vector.

54 ENVIRONMENTAL SCIENCES↗