Search NASA⌕ Search

SEARCH · Search NASA

Results for “Amplifier”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Multiple-amplifier sensing charged-coupled device: model and improvement of the node removal efficiency

The multiple-amplifier sensing charge-coupled device (MAS-CCD) has emerged as a promising technology for astronomical observation, quantum imaging, and low-energy particle detection due to its ability to reduce the readout time for the same readout noise level compared with its predecessor, the skipper-CCD, by reading out the same charge packet through multiple inline amplifiers. Previous works identified a new parameter in this sensor, called node removal inefficiency (NRI), related to inefficiencies in charge transfer and residual charge removal from the sense node of each amplifier after readout. These inefficiencies can lead to distortions in the measured signals similar to those produced by the charge transfer inefficiencies in standard CCDs. We introduce more details in the mathematical model of the NRI mechanism and provide techniques to quantify its magnitude from the measured data. It also proposes a new operation strategy that significantly reduces its effect with minimal alterations of the timing sequences or voltage settings for the other signals of the sensor. The proposed technique is demonstrated experimentally on a 16-amplifier MAS-CCD. At the same time, the experimental data demonstrate that this approach minimizes the NRI effect to levels comparable with other sources of distortion such as the charge transfer inefficiency in scientific devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Limit circuit prevents overdriving of operational amplifier

Cutoff-type high gain amplifier coupled by a diode prevents overdriving of operational amplifier. An amplified feedback signal offsets the excess input signal that tends to cause the amplifier to exceed its preset limit. The output is, therfore, held to the set clamp level.

Openshaw, F. L.↗

Development of a 20-W solid-state S-band power amplifier

As an alternative to the use of traveling wave tube amplifiers in spacecraft with long life mission requirements, a solid state S band amplifier was developed. A solid state amplifier with an output of 20 W at 2295 MHz, a dc/RF efficiency of 38%, and a gain of 27 dB was developed. The physical and electrical performance of the solid state amplifier are described.

Vandercapellen, A. G.↗

Low noise parametric amplifiers for radio astronomy observations at 18-21 cm wavelength

The principle characteristics and use of SHF parametric amplifiers for radiometer input devices are explored. Balanced parametric amplifiers (BPA) are considered as the SHF signal amplifiers allowing production of the amplifier circuit without a special filter to achieve decoupling. Formulas to calculate the basic parameters of a BPA are given. A modulator based on coaxial lines is discussed as the input element of the SHF. Results of laboratory tests of the receiver section and long-term stability studies of the SHF sector are presented.

Kanevskiy, B. Z.↗

Development and fabrication of S-band chip varactor parametric amplifier

A noncryogenic, S-band parametric amplifier operating in the 2.2 to 2.3 GHz band and having an average input noise temperature of less than 30 K was built and tested. The parametric amplifier module occupies a volume of less than 1-1/4 cubic feet and weighs less than 60 pounds. The module is designed for use in various NASA ground stations to replace larger, more complex cryogenic units which require considerably more maintenance because of the cryogenic refrigeration system employed. The amplifier can be located up to 15 feet from the power supply unit. Optimum performance was achieved through the use of high-quality unpackaged (chip) varactors in the amplifier design.

Kramer, E.↗

The solid-state Ku-band power amplifier

A survey of IMPATT diodes and negative resistance amplifiers is presented. The first phase of the amplifier effort is discussed in which a single diode reflection amplifier delivering 0.5 watt at 15 GHz with 10-dB gain over a 1-GHz band was developed. The design of a dominant mode resonant combiner is described along with the characterization of the IMPATT diodes. Results are given on the complete amplifier and on the thermal and graceful failure characteristics of the unit.

Geller, B. D.↗

Ku band low noise parametric amplifier

A low noise, K sub u-band, parametric amplifier (paramp) was developed. The unit is a spacecraft-qualifiable, prototype, parametric amplifier for eventual application in the shuttle orbiter. The amplifier was required to have a noise temperature of less than 150 K. A noise temperature of less than 120 K at a gain level of 17 db was achieved. A 3-db bandwidth in excess of 350 MHz was attained, while deviation from phase linearity of about + or - 1 degree over 50 MHz was achieved. The paramp operates within specification over an ambient temperature range of -5 C to +50 C. The performance requirements and the operation of the K sub u-band parametric amplifier system are described. The final test results are also given.

Source record↗

A dual-amplifier hot-wire anemometer

The conceptual design of a dual-amplifier constant-temperature hot-wire anemometer is described. This hot-wire anemometer consists of three basic independent modules: a Wheatstone bridge in which the hot wire is one of its arms, an error-correction amplifier, and a voltage-controlled current source. The last two modules constitute the feedback network of this hot-wire anemometer. Thus the output voltage across the wire is a true function of the instantaneous changes in the wire resistance induced by the cooling effect of the flow. The dual-amplifier is capable of reaching relatively high frequency response through adequate selection of its active elements. Suitable gain of the error-correction amplifier and proper choice of the transfer function of the current source has yielded a frequency bandwidth up to 200 kHz.

Sadeh, W. Z.↗

Low-Noise Band-Pass Amplifier

Circuit uses standard components to overcome common limitation of JFET amplifiers. Low-noise band-pass amplifier employs JFET and operational amplifier. High gain and band-pass characteristics are achieved with suitable choice of resistances and capacitances. Circuit should find use as low-noise amplifier, for example as first stage instrumentation systems.

Kleinberg, L.↗

Direct nuclear-pumped laser amplifier

A (He-3)-Xe gas mixture, excited by the He-3(n,p)H-3 reaction, has been employed to amplify the output of a (He-3)Xe direct nuclear-pumped laser. Lasing occurred at the 2.63 micron line of XeI in the oscillator. The oscillator output was reflected through 180 deg and passed through the amplifier system. Power measurements of the oscillator output and the amplifier output show the laser power to be amplified by a factor of 3 for the (He-3)-Xe system. Amplification by a factor of 5 was obtained for a (He-3)-CO system.

Jalufka, N. W.↗

A K-band GaAs FET amplifier with 8.2-W output power

An 8.2-W GaAs FET amplifier with 38.6 + or - 0.5-dB gain over a 17.7-19.1-GHz frequency band has been developed. This amplifier combines the outputs of eight multistage amplifier modules utilizing a radial combiner. This state-of-the art power level has been achieved with AM/PM of less than 2 deg/dB. The third-order intermodulation products at 1-dB gain compression were 20 dBc, and variation in group delay over the frequency band was less than + or - 0.25 ns. Tests show that the amplifier is unconditionally stable and follows the graceful-degradation principle.

Goel, J.↗

The 30 GHz solid state amplifier for low cost low data rate ground terminals

This report details the development of a 20-W solid state amplifier operating near 30 GHz. The IMPATT amplifier not only met or exceeded all the program objectives, but also possesses the ability to operate in the pulse mode, which was not called for in the original contract requirements. The ability to operate in the pulse mode is essential for TDMA (Time Domain Multiple Access) operation. An output power of 20 W was achieved with a 1-dB instantaneous bandwidth of 260 MHz. The amplifier has also been tested in pulse mode with 50% duty for pulse lengths ranging from 200 ns to 2 micro s with 10 ns rise and fall times and no degradation in output power. This pulse mode operation was made possible by the development of a stable 12-diode power combiner/amplifier and a single-diode pulsed driver whose RF output power was switched on and off by having its bias current modulated via a fast-switching current pulse modulator. Essential to the overall amplifier development was the successful development of state-of-the-art silicon double-drift IMPATT diodes capable of reproducible 2.5 W CW output power with 12% dc-to-RF conversion efficiency. Output powers of as high as 2.75 W has been observed. Both the device and circuit design are amenable to low cost production.

Ngan, Y. C.↗

A long-pulse amplifier for solar-pumped iodine lasers

The characteristics of a photodissociation iodine-laser amplifier pumped with a solar-simulating radiation were studied. Under long-pulse energy extraction, an energy amplification of about three and an energy storage time of longer than 500 microseconds were observed for a one meter long, 10 mm i.d. amplifier tube. The effects of elevated temperatures resulted in little reduction of the amplifier gain. These results confirm that developing an efficient chain of oscillator-amplifiers for a high-power solar-pumped iodine laser is indeed feasible.

Hwang, I. H.↗

Characterization of a 30-GHz IMPATT solid state amplifier

Described are the characterization and testing of a 20 W solid state amplifier operating in the Ka band to be used in low cost experimental ground terminals. The amplifier was developed by the TRW Electronic Systems Group under NASA Contract NAS3-23266 as a proof-of-concept (POC) device in support of the Advanced Communications Technology Satellite (ACTS) program. Additional goals were development of high-power IMPATT devices and circulators, and multistage diode circuits, which are an integral part of the amplifier. The amplifier underwent acceptance testing at the NASA Lewis Research Center, Cleveland, Ohio. Characteristics measured include the output power of 42 dB m, gain of 30 dB, an injection-locking RF bandwidth of 260 MHz, and an overall direct current-to-radiofrequency (dc-to-RF) efficiency of 6.7 percent.

Wald, Lawrence W.↗

Common source cascode amplifiers for integrating IR-FPA applications

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Woolaway, James T.↗

The e-beam sustained CO2 laser amplifier

The design features of an e-beam sustained CO2 amplifier are described. The amplifier is designed specifically as a catalyst test-bed to study the performance of room temperature precious metal CO-oxidation catalysts under e-beam sustained operation. The amplifier has been designed to provide pulse durations of 30 microseconds in a discharge volume of 2 litres. With a gas flow velocity of 2 metres per second, operation at repetition rates of 10 Hz is accommodated. The system is designed for sealed-off operation and a catalyst bed is housed in the gas circulation system downstream from the discharge region. CO and oxygen monitors are used for diagnosis of gas composition in the amplifier so that catalyst performance can be monitored in situ during sealed lifetests.

Brown, M. J.↗

High efficiency Ka-band MMIC amplifiers

This paper describes recent progress in the Ka-band MMIC power amplifier program. New materials, material growth techniques, device designs and circuit design techniques have made it possible to design and fabricate MMIC amplifiers with both high efficiency and high power at Ka-band and higher frequencies. MMIC amplifiers using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices presently achieve 400 mW with 25 percent efficiency at Ka-band and 1 W, 35 percent efficient amplifiers are being developed.

Haugland, Edward J.↗

C-band superconductor/semiconductor hybrid field-effect transistor amplifier on a LaAlO3 substrate

A single-stage C-band superconductor/semiconductor hybrid field-effect transistor amplifier was designed, fabricated, and tested at 77 K. The large area (1 inch x 0.5 inches) high temperature superconducting Tl-Ba-Ca-Cu-O (TBCCO) thin film was rf magnetron sputtered onto a LaAlO3 substrate. The film had a transition temperature of about 92 K after it was patterned and etched. The amplifier showed a gain of 6 dB and a 3 dB bandwidth of 100 MHz centered at 7.9 GHz. An identical gold amplifier circuit was tested at 77 K, and these results are compared with those from the hybrid amplifier.

Nahra, J. J.↗