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Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
The catalytic activity of transition metal sulfide (TMS) clusters in small molecule activation, redox transformations, and charge transfer has inspired the design of novel TMS-based materials for energy-related catalysis and chemical applications. Polyoxometalates (POMs), known for their structural diversity, can in principle be transformed into TMS clusters; however, fully sulfided analogs are rarely isolated, likely due to the strong tendency of uncapped TMS clusters to agglomerate. Here, we report the geometric and electronic structure of a capping ligand-free fully sulfided analog of heptamolybdate Anderson POM [Mo VI 7 O 24 ] 6− , synthesized through the sulfidation of a nanoconfined POM secured within a porous Zr-metal organic framework (NU-1000). A combined computational and experimental analysis indicates that the sulfided counterpart of the Anderson POM is geometrically and electronically more sophisticated than the parent POM. Comparison of experimental pair distribution function (PDF) data with computational simulations confirms that, unlike the oxygen-only [Mo VI 7 O 24 ] 6− cluster, the [Mo IV 7 (μ 3 -S) 6 (μ 2 -SH) 6 (S 2 ) 6 ] 2− polythiometalate (PTM) exhibits diverse sulfur anions (S 2− , HS − , S 2 2− ). DFT calculations indicate that H 2 S acts as a reducing agent, and together with terminal disulfide (S 2 2− ) ligands in the PTM structure, facilitates the complete reduction of all seven Mo VI centers in the parent POM to Mo IV . These findings are supported by X-ray photoelectron spectroscopy (XPS), which confirms exclusive Mo IV , and elemental analysis, which shows quantitative sulfur incorporation. Difference envelope density (DED) mapping further reveals that the PTM clusters are spatially confined within the MOF pores, preventing agglomeration and preserving molecular integrity.
The Component-Level Electronic-Assembly Repair (CLEAR) project at the NASA Glenn Research Center is aimed at developing technologies that will enable space-flight crews to perform in situ component-level repair of electronics on Moon and Mars outposts, where there is no existing infrastructure for logistics spares. These technologies must provide effective repair capabilities yet meet the payload and operational constraints of space facilities. Effective repair depends on a diagnostic capability that is versatile but easy to use by crew members that have limited training in electronics. CLEAR studied two techniques that involve extensive precharacterization of "known good" circuits to produce graphical signatures that provide an easy-to-use comparison method to quickly identify faulty components. Analog Signature Analysis (ASA) allows relatively rapid diagnostics of complex electronics by technicians with limited experience. Because of frequency limits and the growing dependence on broadband technologies, ASA must be augmented with other capabilities. To meet this challenge while preserving ease of use, CLEAR proposed an alternative called Complex Signature Analysis (CSA). Tests of ASA and CSA were used to compare capabilities and to determine if the techniques provided an overlapping or complementary capability. The results showed that the methods are complementary.
The theory of magnetospheric recirculation for cyclic electron energization and transport may apply in part to heliospheric transport of Jovian electrons if enhanced cross-IMF propagation occurs at heliospheric altitudes near and below the solar wind transition region. Low altitude, ecliptic-to-polar transport would short-circuit conventional interplanetary diffusion, facilitate rapid access to the polar heliosphere with minimal adiabatic energy losses, and provide a seed population for acceleration to 100-1000 MeV energies at the solar wind termination shock and in the heliomagnetotail.
Porous-floating-gate, "vertical" field-effect transistor proposed as programmable analog memory device especially suitable for use in electronic neural networks. Analog value of electrical conductance of device represents synaptic weight (strength of synaptic connection) repeatedly modified by application of suitable writing or erasing voltage. Suited for hardware implementations of massively parallel neural-network architectures for two important reasons: vertical transistor structure requires only two external electrodes, and use of tailored amorphous semiconductors provides choice of very wide range of low conductivity values, dictated by overall power dissipation requirements in massively parallel neural-network circuits.
Electronic responses of glasses under extreme pressures differ from those of crystalline analogs. Their distinct electronic environments are found in network formers with well-defined, covalent-bonded coordination environments (e.g., [4] Si and [4] Al) and in network modifiers with more disordered, ionic-bonded configurations (e.g., [5,6,7] Ca). Deciphering the evolution of the bonding environment of network modifier cations upon compression provides atomic insights into the pressure-driven hardening and transport properties of glasses. Despite the importance, in contrast to extensive efforts to uncover how network formers behave under pressure, considerable structural disorder around network modifiers makes it challenging to probe their electronic bonding environments under compression. Our understanding of the evolution of network modifiers above megabars is currently absent. Here, we report a discovery of highly densified electronic configurations of network modifier Ca in aluminate glass under extreme compression via the first inelastic X-ray scattering at the Ca L-edge up to 140 GPa. As evidenced by the prominent pressure-driven increases in electronic dispersion and delocalization, densified calcium environments are characterized by a decreased average Ca–O distance, the formation of highly coordinated calcium, a broader distribution of topological variables, and a greater distortion of Ca polyhedra above megabars. The spectral features for the Ca environments reveal significant electronic and bonding modifications, including pressure-driven increases in the ligand field interaction, the covalence characteristic of the Ca–O bond, and the electron–hole Coulomb interaction. These densification paths identify the electronic adaptation of network modifiers above megabars, shedding light on the origins of enhanced electron transport and the electron-storing capacity of glasses under pressure.
The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.
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The E x B shear instability of a two-dimensional (2D) filament (i.e., a thin, rectangular strip perpendicular to the magnetic field) of magnetized pure electron plasma is investigated experimentally in the presence of an externally imposed strain flow. Data are acquired using a specialized Penning–Malmberg trap in which strain flows can be applied in 2D by biasing segmented electrodes surrounding the plasma. The E x B drift dynamics are well-described by the Drift-Poisson equations, which are isomorphic to the 2D Euler equations describing ideal fluids. Thus, the experimental results correspond to the Rayleigh instability of a shear layer in a 2D ideal fluid, where the electron density is analogous to the fluid vorticity. Shear layers are prepared by stretching initially axisymmetric electron vortices using a strong, applied strain flow. The data at early times are in quantitative agreement with a linear model which extends Rayleigh’s work to account for the influence of an external strain flow. In the presence of weak strain, the system approximately maintains a phase relationship that corresponds to an instantaneous Rayleigh eigenmode. The instability develops into the nonlinear regime later in time and at smaller spatial scales as the strain rate is increased. A secondary vortex pairing instability is observed, but it is suppressed when the strain-to-vorticity ratio exceeds roughly 0.025. In this way, vorticity transport perpendicular to the filament is diminished due to the applied strain.
Electron transport and acceleration processes in the earth's magnetosphere have correspondences to analogous processes affecting electrons in the solar magnetosphere (i.e., heliosphere). Energetic electrons in planetary magnetospheres and the heliosphere are test particles probing transport and acceleration dynamics with minimal effects on dominant magnetic field configurations. Parallels are discussed relating to electron entry into the magnetospheres from interplanetary and interstellar space, circulatory transport processes, and acceleration by electric fields in boundary regions including shocks and magnetotails.
Hydrogen fluoride (HF) is a primary evolved combustion product of fluorinated and perfluorinated hydrocarbons. HF is produced during combustion by the presence of impurities and hydrogen- containing polymers including polyimides. This effect is especially dangerous in closed occupied volumes like spacecraft and submarines. In these systems, combinations of perfluorinated hydrocarbons and polyimides are used for insulating wiring. HF is both highly toxic and short-lived in closed environments due to its reactivity. The high reactivity also makes HF sampling problematic. An infrared optical sensor can detect promptly evolving HF with minimal sampling requirements, while providing both high sensitivity and high specificity. A rugged optical path length enhancement architecture enables both high HF sensitivity and rapid environmental sampling with minimal gaseous contact with the low-reactivity sensor surfaces. The inert optical sample cell, combined with infrared semiconductor lasers, is joined with an analog and digital electronic control architecture that allows for ruggedness and compactness. The combination provides both portability and battery operation on a simple camcorder battery for up to eight hours. Optical detection of gaseous HF is confounded by the need for rapid sampling with minimal contact between the sensor and the environmental sample. A sensor is required that must simultaneously provide the required sub-parts-permillion detection limits, but with the high specificity and selectivity expected of optical absorption techniques. It should also be rugged and compact for compatibility with operation onboard spacecraft and submarines. A new optical cell has been developed for which environmental sampling is accomplished by simply traversing the few mm-thick cell walls into an open volume where the measurement is made. A small, low-power fan or vacuum pump may be used to push or pull the gaseous sample into the sample volume for a response time of a few seconds. The optical cell simultaneously provides for an enhanced optical interaction path length between the environmental sample and the infrared laser. Further, the optical cell itself is comprised of inert materials that render it immune to attack by HF. In some cases, the sensor may be configured so that the optoelectronic devices themselves are protected and isolated from HF by the optical cell. The optical sample cell is combined with custom-developed analog and digital control electronics that provide rugged, compact operation on a platform that can run on a camcorder battery. The sensor is inert with respect to acidic gases like HF, while providing the required sensitivity, selectivity, and response time. Certain types of combustion events evolve copious amounts of HF, very little of other gases typically associated with combustion (e.g., carbon monoxide), and very low levels of aerosols and particulates (which confound traditional smoke detectors). The new sensor platform could warn occupants early enough to take the necessary countermeasures.
Hardware testing frequently involves the acquisition of waveform and instrumentation signals, which are often recorded on waveform recorders, oscillographs, and video recorders. Years ago, the waveforms were viewed as analog records, as drawn by a paper strip chart pen or electron beam on a cathode ray tube screen. One of the problems in the past was that the analog electronics may not have been able to accurately display the full amplitude of a signal if the real-time signals exceeded the frequency response bandwidth of the recording device. The advent of digital oscilloscopes, waveform recorders, and video frame-grabbers solved many of the frequency response problems, though not all. A restriction on digital waveform acquisition is well known by people in the instrumentation field. Put simply, the sampling frequency must be at least twice the frequency of any signal to be sampled, or vice versa; the signals must be filtered so that none of the signal frequencies are higher than one-half the sample rate (the Nyquist Limit). Then, per Shannon's Sampling Theorem (1949, ref. 1), any sampled signal can be reconstructed for viewing on a display device. If any signals exceed the Nyquist frequency limit, error signals called aliases occur in the output display.
A prototype small, lightweight micro Sun sensor (MSS) has been flight qualified as part of the attitude-determination system of a spacecraft or for Mars surface operations. The MSS has previously been reported at a very early stage of development in NASA Tech Briefs, Vol. 28, No. 1 (January 2004). An MSS is essentially a miniature multiple-pinhole electronic camera combined with digital processing electronics that functions analogously to a sundial. A micromachined mask containing a number of microscopic pinholes is mounted in front of an active-pixel sensor (APS). Electronic circuits for controlling the operation of the APS, readout from the pixel photodetectors, and analog-to-digital conversion are all integrated onto the same chip along with the APS. The digital processing includes computation of the centroids of the pinhole Sun images on the APS. The spacecraft computer has the task of converting the Sun centroids into Sun angles utilizing a calibration polynomial. The micromachined mask comprises a 500-micron-thick silicon wafer, onto which is deposited a 57-nm-thick chromium adhesion- promotion layer followed by a 200-nm-thick gold light-absorption layer. The pinholes, 50 microns in diameter, are formed in the gold layer by photolithography. The chromium layer is thin enough to be penetrable by an amount of Sunlight adequate to form measurable pinhole images. A spacer frame between the mask and the APS maintains a gap of .1 mm between the pinhole plane and the photodetector plane of the APS. To minimize data volume, mass, and power consumption, the digital processing of the APS readouts takes place in a single field-programmable gate array (FPGA). The particular FPGA is a radiation- tolerant unit that contains .32,000 gates. No external memory is used so the FPGA calculates the centroids in real time as pixels are read off the APS with minimal internal memory. To enable the MSS to fit into a small package, the APS, the FPGA, and other components are mounted on a single two-sided board following chip-on-board design practices
Standard deep learning algorithms require differentiating large nonlinear networks, a process that is slow and power-hungry. Electronic contrastive local learning networks (CLLNs) offer potentially fast, efficient, and fault-tolerant hardware for analog machine learning, but existing implementations are linear, severely limiting their capabilities. These systems differ significantly from artificial neural networks as well as the brain, so the feasibility and utility of incorporating nonlinear elements have not been explored. Here, we introduce a nonlinear CLLN—an analog electronic network made of self-adjusting nonlinear resistive elements based on transistors. We demonstrate that the system learns tasks unachievable in linear systems, including XOR (exclusive or) and nonlinear regression, without a computer. We find our decentralized system reduces modes of training error in order (mean, slope, curvature), similar to spectral bias in artificial neural networks. The circuitry is robust to damage, retrainable in seconds, and performs learned tasks in microseconds while dissipating only picojoules of energy across each transistor. This suggests enormous potential for fast, low-power computing in edge systems like sensors, robotic controllers, and medical devices, as well as manufacturability at scale for performing and studying emergent learning.
Single Event Transients in analog and digital electronics from space generated high energetic nuclear particles can disrupt either temporarily and sometimes permanently the functionality and performance of electronics in space vehicles. This work first provides some insights into the modeling of SET in electronic circuits that can be used in SPICE-like simulators. The work is then directed to present methodologies, one of which was developed by this author, for the assessment of SET at different levels of integration in electronics, from the circuit level to the subsystem level.