SEARCH · Search NASA

Results for “CLEAVAGE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

All sources NASA NTRS DOE OSTI

NASA NTRS1978

Fractographic analysis of gaseous hydrogen induced cracking in 18Ni maraging steel

Electron microscope fractographic analysis supplemented an extensive study of the kinetics of gaseous hydrogen assisted cracking in 18Ni maraging steel. Temperature determined the crack path morphology in each steel which, in turn, was directly related to the temperature dependence of the crack growth rate. Crack growth in the low temperature regime proceeded along prior austenite grain boundaries. Increasing the temperature above a critical value produced a continuously increasing proportion of transgranular quasi-cleavage associated with lath martensite boundaries. The amount of transgranular cracking was qualitatively correlated with the degree of temperature-induced deviation from Arrhenius behavior. Fractographic observations are interpreted in terms of hypothesized mechanisms for gaseous hydrogen embrittlement. It is concluded that hydrogen segregation to prior austenite and lath martensite boundaries must be considered as a significant factor in developing mechanisms for gaseous embrittlement of high strength steels.

Gangloff, R. P.↗

NASA NTRS1979

Friction and fracture of single-crystal silicon carbide in contact with itself and titanium

An investigation was conducted to examine the friction properties and mechanical behavior of single-crystal silicon carbide (0001) surface sliding against itself and against polycrystalline titanium. The results indicate hexagon-shaped pits of silicon carbide and the formation of platelet hexagon-shaped wear debris of silicon carbide due to cleavages of both prismatic and basal planes as a result of silicon carbide sliding against itself. The fracturing of silicon carbide also occurs near the adhesive bond to titanium. The wear debris produced by brittle fracture plows the titanium and transfers to it. Further, the silicon carbide wear debris, which adhered and transferred to titanium, plows the silicon carbide surface and transfers back to it

Miyoshi, K.↗

NASA NTRS1979

Friction and wear of single-crystal manganese-zinc ferrite

Sliding friction experiments were conducted with single-crystal manganese-zinc ferrite in contact with itself and with transition metals. Results indicate mating highest atomic density directions (110 line type) on matched crystallographic planes exhibit the lowest coefficient of friction indicating that direction is important in the friction behavior of ferrite. Matched parallel high atomic density planes and crystallographic directions at the interface exhibit low coefficients of friction. The coefficients of friction for ferrite in contact with various metals are related to the relative chemical activity of these metals. The more active the metal, the higher the coefficient of friction. Cracking and the formation of hexagon- and rectangular-shaped platelet wear debris due to cleavages are observed on the ferrite surfaces as a result of sliding.

Miyoshi, K.↗

NASA NTRS1979

In situ oxygen conditioning of /001/ MgO thin film substrates for film growth studies by electron microscopy

It was found that the in situ treatment of 001-plane single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver.

Moorhead, R. D.↗

NASA NTRS1980

Tribological properties of silicon carbide in metal removal process

Material properties are considered as they relate to adhesion, friction, and wear of single crystal silicon carbide in contact with metals and alloys that are likely to be involved in a metal removal process such as grinding. Metal removal from adhesion between sliding surfaces in contact and metal removal as a result of the silicon carbide sliding against a metal, indenting into it, and plowing a series of grooves or furrows are discussed. Fracture and deformation characteristics of the silicon carbide surface are also covered. The adhesion, friction, and metal transfer to silicon carbide is related to the relative chemical activity of the metals. The more active the metal, the higher the adhesion and friction, and the greater the metal transfer to silicon carbide. Atomic size and content of alloying elements play a dominant role in controlling adhesion, friction, and abrasive wear properties of alloys. The friction and abrasive wear (metal removal) decrease linearly as the shear strength of the bulk metal increases. They decrease as the solute to solvent atomic radius ratio increases or decreases linearly from unity, and with an increase of solute content. The surface fracture of silicon carbide is due to cleavages of 0001, 10(-1)0, and/or 11(-2)0 planes.

Miyoshi, K.↗

NASA NTRS1980

Wear particles of single-crystal silicon carbide in vacuum

Sliding friction experiments, conducted in vacuum with silicon carbide /000/ surface in contact with iron based binary alloys are described. Multiangular and spherical wear particles of silicon carbide are observed as a result of multipass sliding. The multiangular particles are produced by primary and secondary cracking of cleavage planes /000/, /10(-1)0/, and /11(-2)0/ under the Hertzian stress field or local inelastic deformation zone. The spherical particles may be produced by two mechanisms: (1) a penny shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and (2) attrition of wear particles.

Miyoshi, K.↗

NASA NTRS1980

Anisotropic Tribological Properties of Silicon Carbide

The anisotropic friction, deformation and fracture behavior of single crystal silicon carbide surfaces were investigated in two categories. The categories were called adhesive and abrasive wear processes, respectively. In the adhesive wear process, the adhesion, friction and wear of silicon carbide were markedly dependent on crystallographic orientation. The force to reestablish the shearing fracture of adhesive bond at the interface between silicon carbide and metal was the lowest in the preferred orientation of silicon carbide slip system. The fracturing of silicon carbide occurred near the adhesive bond to metal and it was due to primary cleavages of both prismatic (10(-1)0) and basal (0001) planes.

Miyoshi, K.↗

NASA NTRS1980

Solar energy receiver for a Stirling engine

A solar energy receiver includes a separable endless wall formed of a ceramic material in which a cavity of substantially cylindrical configuration is defined for entrapping solar flux. An acceptance aperture is adapted to admit to the cavity a concentrated beam of solar energy. The wall is characterized by at least one pair of contiguously related segments separated by lines of cleavage intercepting the aperture. At least one of the segments is supported for pivotal displacement. A thermal-responsive actuator is adapted to respond to excessive temperatures within the cavity for initiating pivoted displacement of one segment, whereby thermal flux is permitted to escape from the cavity.

Selcuk, M. K.↗

NASA NTRS1981

The generation and morphology of single-crystal silicon carbide wear particles under adhesive conditions

Sliding friction experiments were performed in vacuum at room temperature on a plane-type SiC surface in contact with iron-based binary alloys. Multiangular and spherical wear particles were found to form as a result of multipass sliding. The multiangular particles were produced by primary and secondary cracking of the 0001, 10(-)10, and 11(-)20 plane-type cleavage planes under the Hertzian stress field or local inelastic deformation zone. When alloy surfaces are in contact with silicon carbide under a load of 0.2 N, the alloy around the contact area is subjected to stresses that are close to the elastic limit in the elastic deformation region and/or exceed it. It was also found that spherical wear particles may be produced by two mechanisms: a penny-shaped fracture along the circular stress trajectories under the local inelastic deformation zone, and the attrition and fatigue of wear particles.

Miyoshi, K.↗

NASA NTRS1983

CLEFT Process for GaAs Solar Cells

CLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost.

Fan, J. C. C.↗

NASA NTRS1982

Pulsed radiolysis of model aromatic polymers and epoxy based matrix materials

Models of primary processes leading to deactivation of energy deposited by a pulse of high energy electrons were derived for epoxy matrix materials and polyl-vinyl naphthalene. The basic conclusion is that recombination of initially formed charged states is complete within 1 nanosecond, and subsequent degradation chemistry is controlled by the reactivity of these excited states. Excited states in both systems form complexes with ground state molecules. These excimers or exciplexes have their characteristics emissive and absorptive properties and may decay to form separated pairs of ground state molecules, cross over to the triplet manifold or emit fluorescence. ESR studies and chemical analyses subsequent to pulse radiolysis were performed in order to estimate bond cleavage probabilities and net reaction rates. The energy deactivation models which were proposed to interpret these data have led to the development of radiation stabilization criteria for these systems.

Gupta, A.↗

NASA NTRS1982

Allowable silicon wafer thickness versus diameter for ingot rotation ID wafering

Inner diameter (ID) wafering of ingot rotation reduce the ID saw blade diameter was investigated. The blade thickness can be reduced, resulting in minimal kerf loss. However, significant breakage of wafers occurs during the rotation wafering as the wafer thickness decreases. Fracture mechanics was used to develop an equation relating wafer thickness, diameter and fracture behavior at the point of fracture by using a model of a wafer, supported by a center column and subjected to a cantilever force. It is indicated that the minimum allowable wafer thickness does not increase appreciably with increasing wafer diameter and that fracture through the thickness rather than through the center supporting column limits the minimum allowable wafer thickness. It is suggested that the minimum allowable wafer thickness can be reduced by using a vacuum chuck on the wafer surface to enhance cleavage fracture of the center core and by using 111 ingots.

Chen, C. P.↗

NASA NTRS1982

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗

NASA NTRS1982

Microstructural effects on the room and elevated temperature low cycle fatigue behavior of Waspaloy

Longitudinal specimens of Waspaloy containing either coarse grains with small gamma or fine grains with large gamma were tested in air at a frequency of 0.33 Hz or 0.50 Hz. The coarse grained structures exhibited planar slip on (III) planes and precipitate shearing at all temperatures. Cracks initiated by a Stage 1 mechanism and propagated by a striation forming mechanism. At 700 C and 800 C, cleavage and intergranular cracking were observed. Testing at 500 C, 700 C, and 800 C caused precipitation of grain boundary carbides. At 700 C, carbides precipitated on slip bands. The fine grained structures exhibited planar slip on (111) planes. Dislocations looped the large gamma precipitates. This structure led to stress saturation and propagation was observed. Increasing temperatures resulted in increased specimen oxidation for both heat treatments. Slip band and grain boundary oxidation were observed. At 800 C, oxidized grain boundaries were cracked by intersecting slip bands which resulted in intergranular failure. The fine specimens had crack initiation later in the fatigue life, but with more rapid propagation crack propagation.

Lerch, B. A.↗

NASA NTRS1982

Radiation-induced defects in SiO2 as determined with XPS

An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density and electron mean free path as a function of depth, for the cases of device-quality gate oxides grown on Si substrates and irradiated with zero to 20 eV electrons during in situ X-ray photoelectron spectroscopy. These structures had been thinned stepwise to 25-60 A by means of a wet chemical depth-profiling procedure. Si(3+) species are formed in the Si/SiO2 interface region, and their observation during their relaxation and annihilation is correlated with strained Si-O-Si bonds. The observation of bond of cleavage and bond strain gradients in these samples is used to extend silica devitrification models for the explanation of fixed oxide charge generation and interface states.

Grunthaner, F. J.↗

NASA NTRS1983

Nuclear track records in the Abee enstatite chondrite

A determination of preatmospheric mass and a delineation of cosmic ray exposure history are made, through the study of nuclear track records in 14 samples taken from different locations of an Abee enstatite chondrite cut slab. Measured track densities in different samples range from 10,000 to 1,000,000/sq cm. Excess tracks of fissiogenic origin were found near the grain edges and across cleavage planes in eight enstatite grains out of the 300 analyzed. The track data rule out preirradiation of any of the analyzed samples with shielding of less than a few tens of cm. The isotrack density contours on the plane of the slab imply an asymmetric ablation of the Abee chondrite during its atmospheric transit. A sphere of about 30 cm radius approximates the preatmospheric shape and size of the Abee meteorite, which underwent a 70% mass loss during ablation.

Goswami, J. N.↗

NASA NTRS1983

A brittle to ductile transition in NiAl of a critical grain size

Tensile tests have been carried out on the strongly ordered B2 aluminide NiAl at 400 C to investigate the effect of the grain size on the ductility of the material. It is found that the ductility is very low and essentially independent of the grain size for aggregates of grains larger than about 20 microns; for finer-grained aggregates, the ductility increases sharply with decreasing grain size. Thus, NiAl exhibits a critical grain size below which polycrystalline aggregates are ductile in tension. For all grain sizes, fracture occurs in a brittle manner through a combination of intergranular decohesion and transgranular cleavage.

Schulson, E. M.↗

NASA NTRS1984

Ceramic wear in indentation and sliding

The various wear mechanisms involved with single-crystal ceramic materials in indentation and in sliding contacts. Experiments simulating interfacial events have been conducted with hemispherical, conical and pyramidal indenters (riders). With spherical riders, under either abrasive or adhesive conditions, two types of fracture pits have been observed. First, spherical-shaped fracture pits and wear particles are found as a result of either indenting or sliding. These are shown to be due to a spherical-shaped fracture along the circular or spherical stress trajectories. Second, polyhedral fracture pits and debris, produced by anisotropic fracture, and also found both during indenting and sliding. These are primarily controlled by surface and subsurface cracking along cleavage planes. Several quantitative results have also been obtained from this work. For example, using a pyramidal diamond, crack length of Mn-Zn ferrite in the indentation process grows linearly with increasing normal load. Moreover, the critical load to fracture both in indentation and sliding is essentially isotropic and is found to be directly proportional to the indenter radius.

Miyoshi, K.↗