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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Radiation Test Challenges for Scaled Commerical Memories

As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required.

LaBel, Kenneth A.↗
NASA NTRS2007

A One Chip Hardened Solution for High Speed SpaceWire System Implementations. Session: Components

An Application Specific Integrated Circuit (ASIC) that implements the SpaceWire protocol has been developed in a radiation hardened 0.25 micron CMOS technology. This effort began in March 2003 as a joint development between the NASA Goddard Space Flight Center (GSFC) and BAE Systems. The BAE Systems SpaceWire ASIC is comprised entirely of reusable core elements, many of which are already flight-proven. It incorporates a router with 4 SpaceWire ports and two local ports, dual PC1 bus interfaces, a microcontroller, 32KB of internal memory, and a memory controller for additional external memory use. The SpaceWire cores are also reused in other ASICs under development. The SpaceWire ASIC is planned for use on the Geostationary Operational Environmental Satellites (GOES)-R, the Lunar Reconnaissance Orbiter (LRO) and other missions. Engineering and flight parts have been delivered to programs and users. This paper reviews the SpaceWire protocol and those elements of it that have been built into the current and next SpaceWire reusable cores and features within the core that go beyond the current standard and can be enabled or disabled by the user. The adaptation of SpaceWire to BAE Systems' On Chip Bus (OCB) for compatibility with the other reusable cores will be reviewed and highlighted. Optional configurations within user systems and test boards will be shown. The physical implementation of the design will be described and test results from the hardware will be discussed. Application of this ASIC and other ASICs containing the SpaceWire cores and embedded microcontroller to Plug and Play and reconfigurable implementations will be described. Finally, the BAE Systems roadmap for SpaceWire developments will be updated, including some products already in design as well as longer term plans.

Marshall, Joseph R.↗
NASA NTRS2012

High fidelity, radiation tolerant analog-to-digital converters

Techniques for an analog-to-digital converter (ADC) using pipeline architecture includes a linearization technique for a spurious-free dynamic range (SFDR) over 80 deciBels. In some embodiments, sampling rates exceed a megahertz. According to a second approach, a switched-capacitor circuit is configured for correct operation in a high radiation environment. In one embodiment, the combination yields high fidelity ADC (>88 deciBel SFDR) while sampling at 5 megahertz sampling rates and consuming <60 milliWatts. Furthermore, even though it is manufactured in a commercial 0.25-.mu.m CMOS technology (1 .mu.m=12.sup.-6 meters), it maintains this performance in harsh radiation environments. Specifically, the stated performance is sustained through a highest tested 2 megarad(Si) total dose, and the ADC displays no latchup up to a highest tested linear energy transfer of 63 million electron Volts square centimeters per milligram at elevated temperature (131 degrees C.) and supply (2.7 Volts, versus 2.5 Volts nominal).

Wang, Charles Chang-I↗
NASA NTRS2013

Fast, High-Precision Readout Circuit for Detector Arrays

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Rider, David M.↗
NASA NTRS1995

CMOS Charged Particle Spectrometers

Integrated circuits manufactured in CMOS technology, have been developed as diffusion-based charged particle spectrometers for space applications. A four-chip spectrometer designed to count protons and heavier ions was flown on the Clementine spacecraft, and the spectrometer proton response is compared to GOES-6 proton data for the 21 Feb. 1994 solar proton event.

charged↗
DOE OSTI2020

A Sub-Threshold Low-Power Integrated Bandpass Filter for Highly-Integrated Spectrum Analyzers

Low-power analog filter banks provide frequency analysis with minimal power and space requirements, making them viable solutions for integrated remote audio- and vibration-sensing applications. Compared with their digital counterparts, analog filter banks are better suited to achieve the lower power consumption necessary for IoT applications, while maintaining high dynamic range and a wide operational frequency range. In this work, the design and implementation of a sub-threshold complementary metal-oxide semiconductor (CMOS) integrated low-power tunable analog filter channel for signal spectrum analysis and signal discrimination is presented. Project specifications required a programmable, high-order, monolithic bandpass filter channel with small chip area, low power consumption, high dynamic range, and wide operational frequency range. The 8th-order filter channel presented in this work provides an effective Q-factor of 4.5 and a minimum dynamic range (DR) of approximately 85 dB, while allowing for tuning across a range of center frequencies from 2 kHz to 100 kHz, with power consumption of a single 8th-order filter channel measured at 256 µW nominally at the highest center frequency. An integrated analog Gm-C filter topology was selected for this application. Functionally, the high-Q bandpass filter transfer function is implemented via four cascaded 2nd-order filter cells, resulting in a single 8th-order filter channel, fabricated in 130-nm 1.2-V CMOS technology, suitable for use in monolithic integrated spectral analysis (MISA1) applications.

Long, Gavin B.↗
DOE OSTI2020

A Low-Power Time-to-Digital Converter for the CMS Endcap Timing Layer (ETL) Upgrade

We present the design and test results of a Time-to-Digital-Converter (TDC). The TDC will be a part of the readout ASIC, called ETROC, to read out Low-Gain Avalanche Detectors (LGADs) for the CMS Endcap Timing Layer (ETL) of High-Luminosity LHC upgrade. One of the challenges of the ETROC design is that the TDC is required to consume less than 200 W for each pixel at the nominal hit occupancy of 1%. To meet the low-power requirement, we use a single delay line for both the Time of Arrival (TOA) and the Time over Threshold (TOT) measurements without delay control. A double-strobe self-calibration scheme is used to compensate for process variation, temperature, and power supply voltage. The TDC is fabricated in a 65 nm CMOS technology. The overall performances of the TDC have been evaluated. The TOA has a bin size of 17.8 ps within its effective dynamic range of 11.6 ns. The effective measurement precision of the TOA is 5.6 ps and 9.9 ps with and without the nonlinearity correction, respectively. The TDC block consumes 97 W at the hit occupancy of 1%. Over a temperature range from 23 C to 78 C and a power supply voltage range from 1.05 V to 1.35 V (the nominal value of 1.20 V), the self-calibrated bin size of the TOA varies within 0.4%. The measured TDC performances meet the requirements except that more tests will be performed in the future to verify that the TDC complies with the radiation-tolerance specifications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

A Sub-Threshold Low-Power Integrated Bandpass Filter for Highly-Integrated Spectrum Analyzers

Low-power analog filter banks provide frequency analysis with minimal power and space requirements, making them viable solutions for integrated remote audio- and vibration-sensing applications. Compared with their digital counterparts, analog filter banks are better suited to achieve the lower power consumption necessary for IoT applications. In this work, the design and implementation of a sub-threshold complementary metal-oxide semiconductor (CMOS) integrated low-power tunable bandpass filter channel for signal spectrum analysis and signal discrimination is presented, including performance improvements to stability and precise matching between filter stages. The 8 th -order filter channel achieves an effective Q-factor of 4.5 and dynamic range of 60 dB, has an operational frequency range from 2 kHz to 100 kHz, and consumes 256 µW nominally at the highest center frequency. An integrated analog Gm-C filter topology is selected for this application. Functionally, the high-Q bandpass filter transfer function is implemented via four cascaded 2 nd -order filter cells and is fabricated in 130-nm 1.2-V CMOS technology, making it suitable for use in monolithic integrated spectral analysis (MISA) applications.

Long, Gavin↗
DOE OSTI2020

A 20 Gbps Data Transmitting ASIC with PAM4 for Particle Physics Experiments

We present the design principle and test results of a data transmitting ASIC, GBS20, for particle physics experiments. The goal of GBS20 will be an ASIC that employs two serializers each from the 10.24 Gbps lpGBT SerDes, sharing the PLL also from lpGBT. A PAM4 encoder plus a VCSEL driver will be implemented in the same die to use the same clock system, eliminating the need of CDRs in the PAM4 encoder. This way the transmitter module, GBT20, developed using the GBS20 ASIC, will have the exact lpGBT data interface and transmission protocol, with an output up to 20.48 Gbps over one fiber. With PAM4 embedded FPGAs at the receiving end, GBT20 will halve the fibers needed in a system and better use the input bandwidth of the FPGA. A prototype, GBS20v0 is fabricated using a commercial 65 nm CMOS technology. This prototype has two serializers and a PAM4 encoder sharing the lpGBT PLL, but no user data input. An internal PRBS generator provides data to the serializers. GBS20v0 is tested barely up to 20.48 Gbps. With lessons learned from this prototype, we are designing the second prototype, GBS20v1, that will have 16 user data input channels each at 1.28 Gbps. We present the design concept of the GBS20 ASIC and the GBT20 module, the preliminary test results, and lessons learned from GBS20v0 and the design of GBS20v1 which will be not only a test chip but also a user chip with 16 input data channels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

The design and test results of A Giga-Bit Cable Receiver (GBCR) for the ATLAS Inner Tracker Pixel Detector

This paper presents the design and test results of a Gigabit Cable Receiver ASIC called GBCR for the HL-LHC upgrade of the ATLAS Inner Tracker (ITk) pixel detector. Three prototypes (GBCR1, GBCR2, and GBCR3) have been designed in the CERN-identified 65 nm CMOS technology. GBCR receives seven (GBCR2) or six (GBCR3) channels (RX) each at 1.28 Gbps from the front-end readout chip RD53B via flex cables up to 1 meter and Twinax cables up to 5 meters and sends the equalized and retimed signals to lpGBT. Both GBCR2 and GBCR3 ASICs have two transmitting channels (TX) that pre-emphasize the signals from lpGBT before sending them to RD53B through the same cables. No Single-Event Upset (SEU) is observed in any tested channels of GBCR2 in a 400 MeV proton beam. The extrapolated bit error rate for the future HL-LHC application is below 8*10^(-16), significantly below the specified BER criterion. GBCR3 is designed to improve the immunity to single-event-upset by applying the Triple Modular Redundancy (TMR) technology to all RX channels. The retimed signals from GBCR3 have less total jitter than those from GBCR2 (35 ps versus 79 ps). Each receiver channel of GBCR3 consumes 75% more power than that of GBCR2.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology

The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2002

Integrated imaging sensor systems with CMOS active pixel sensor technology

This paper discusses common approaches to CMOS APS technology, as well as specific results on the five-wire programmable digital camera-on-a-chip developed at JPL. The paper also reports recent research in the design, operation, and performance of APS imagers for several imager applications.

double sampling↗
NASA NTRS1995

JPL CMOS Active Pixel Sensor Technology

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Space Microelectronics Image Sensors APS Digital I↗
NASA NTRS2000

High responsivity CMOS imager pixel implemented in SOI technology

Availability of mature sub-micron CMOS technology and the advent of the new low noise active pixel sensor (APS) concept have enabled the development of low power, miniature, single-chip, CMOS digital imagers in the decade of the 1990's.

front-illuminated high responsivity CMOS high-phot↗
NASA NTRS2011

Modeling the effects of hydrogen and dose rate sensitivity in CMOS and bipolar technologies

Low dose rate (LDR) and high dose rate (HDR) experiments on field-oxide-field-effect-transistors (FOXFETs) and gated lateral pnp (GLPNP) bipolar transistors indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. This EF is also affect by the presence of hydrogen in the oxide. In this work, we developed a one dimensional (1-D) numerical calculations code to investigate the key mechanisms that describe the dose rate sensitivity and the effect of hydrogen on dose rate effects. We used a finite-difference methodology for the numerical calculations that allow for computing solutions for the densities of the mobile species as well as for the electrostatic potential at nodes contained within a mesh superimposed on the solution domain. Results from calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. In addition, calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar and CMOS devices results in good agreement with the dose rate calculations of interface trap buildup

Barnaby, Hugh↗
NASA NTRS1995

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

Space Microelectronics Image Sensors APS Digital I↗
NASA NTRS1995

Low Power Camera-on-a-Chip Using CMOS Active Pixel Sensor Technology

A second generation image sensor technology has been developed at the NASA Jet Propulsion Laboratory as a result of the continuing need to miniaturize space science imaging instruments. Implemented using standard CMOS, the active pixel sensor (APS) technology permits the integration of the detector array with on-chip timing, control and signal chain electronics, including analog-to-digital conversion.

Space Microelectronics Image Sensors APS Digital I↗