Results for “CONTACT RESISTANCE” — Page 7

NASA NTRS1980

Apparatus for measuring semiconductor device resistance

A test structure is described for enabling the accurate measurement of the resistance characteristics of a semiconductor material and includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the resistance encountered by currents passed between the terminals. A pair of terminals includes a first terminal extending in a closed path, such as a circle, around a second terminal, so that all currents flowing between the terminals flow along a region of known width and length. Two or more pairs of concentric terminals can be utilized, wherein the ratio of radii of each pair of terminals is the same as the ratio for all other pairs of terminals, to facilitate the calculation of the contact resistance between each terminal and the semiconductor surface, as well as the calculation of the resistance of the semiconductor material apart from the effect of the terminal to semiconductor contact resistances.

Matzen, W. J.↗

NASA NTRS1992

Sinterless contacts to shallow junction InP solar cells

In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering.

Weizer, V. G.↗

NASA NTRS1983

Accelerated degradation of silicon metallization systems

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing.

Lathrop, J. W.↗

NASA NTRSDate not supplied

Realistic Thermographic Simulation of Impact Damage with Quadrupole Method

Flash thermography has been shown to be an effective method for detection of delaminations in carbon fiber reinforced polymer (CFRP) composite structures. Improved understanding of the limitations of the technique can be obtained by simulating the inspection process. Time domain finite difference and finite element methods are well suited for such simulations but can be computationally intensive. An alternate method is to solve the Laplace transform of the heat equation, then invert the Laplace transform to produce a time domain response. Often this is referred to as the thermal quadrupole method and is well suited for simulating flash thermography. The quadrupole method has been used extensively for simulating one-dimensional heat flow in multilayer systems with contact resistances at the interfaces. It is also applicable for three dimensional configurations, in particular for simulation of changes in thermographic response due to delaminations in composites. This presentation discusses three-dimensional simulations with realistic shapes and contact resistances at the interfaces between layers. The results of these simulations are compared to thermography measurements on composites specimens with impact induced delaminations.

thermography↗

NASA NTRSDate not supplied

Realistic Thermographic Simulation of Impact Damage with Quadrupole Method

Flash thermography has been shown to be an effective method for detection of delaminations in carbon fiber reinforced polymer (CFRP) composite structures. Improved understanding of thelimitations of the technique can be obtained by simulating the inspection process. Time domainfinite difference and finite element methods are well suited for such simulations but can be computationally intensive. An alternate method is to solve the Laplace transform of the heat equation, then invert the Laplace transform to produce a time domain response. Often this is referred to as the thermal quadrupole method and is well suited for simulating flash thermography. The quadrupole method has been used extensively for simulating one-dimensional heat flow in multilayer systems with contact resistances at the interfaces. It is also applicable for three dimensional configurations, in particular for simulation of changes in thermographic response due to delaminations in composites. This presentation discusses three-dimensional simulations with realistic shapes and contact resistances at the interfaces between layers. The results of these simulations are compared to thermography measurements on composites specimens with impact induced delaminations.

Thermography↗

NASA NTRS2001

Low Temperature Ohmic Contact Formation of Ni2Si on N-type 4H-SiC and 6H-SiC

Nickel Silicide (Ni2Si) is investigated as possible ohmic contact to heavily nitrogen-doped N-type 4H-SiC and 6H-SiC. Nickel Silicide was deposited via electron gun with various thicknesses on both Si and C faces of the SiC substrates. The Ni2Si contacts were formed at room temperature as well as at elevated temperatures (400 to 1000 K). Contact resistivities and I-V characteristics were measured at temperatures between 100 and 700 C. To investigate the electric properties, I-V characteristics were studied and the Transmission Line Method (TLM) was used to determine the specific contact resistance for the samples at each annealing temperature. Both Rutherford Backscattering Spectroscopy (RBS) and Auger Electron Spectroscopy (AES) were used for depth profiling of the Ni2Si, Si, and C. X-ray Photoemission Spectroscopy (XPS) was used to study the chemical structure of the Ni2Si/SiC interface.

Elsamadicy, A. M.↗

NASA NTRS1985

Effects of cooling system parameters on heat transfer in PAFC stack

Analytical and experimental study for the effects of cooling system parameters on the heat transfer and temperature distribution in the electrode plates of a phosphoric acid fuel-cell has been conducted. An experimental set-up that simulates the operating conditions prevailing in a phosphoric-acid fuel-cell stack was designed and constructed. The set-up was then used to measure the overall heat transfer coefficient, the thermal contact resistance, and the electrode temperature distribution for two different cooling plate configurations. Two types of cooling plate configurations, serpentine and straight, were tested. Air, water, and oil were used as coolants. Measurements for the heat transfer coefficient and the thermal contact resistance were made for various flow rates ranging from 16 to 88 Kg/hr, and stack clamping pressure ranging from O to 3448 Kpa. The experimental results for the overall heat transfer coefficient were utilized to derive mathematical relations for the overall heat transfer coefficient as a function of stack clamping pressure and Reynolds number for the three coolants. The empirically derived formulas were incorporated in a previously developed computer program to predict electrodes temperature distribution and the performance of the stack cooling system. The results obtained were then compared with those available in the literature. The comparison showed maximum deviation of +/- 11%.

Abdul-Aziz, Ali A.↗

NASA NTRS1981

Interfacial temperatures and surface heat fluxes during a blade-seal rubbing process

A thermal analysis was made of a blade-seal configuration to determine the effects of thermal contact resistance, blade speed, and thermal properties upon the interfacial temperature. The analysis disclosed that while the thermal properties of the blade or the seal specimen strongly affect the temperatures in their respective parts, the factors which control the overall temperature field are the contact resistance and the heat generated at the interface.

Emery, A. F.↗

NASA NTRS1992

Effects of the cooling system parameters on heat transfer and performance of the PAFC stack during transient operation

An experimental investigation for the effects of transient operation of a phosphoric acid fuel-cell stack on heat transfer and temperature distribution in the electrodes has been conducted. The proposed work utilized the experimental setup with modifications, which was designed and constructed under NASA Contract No. NCC-3-17(5). The experimental results obtained from this investigation and the mathematical model obtained under NASA Contract No. NCC3-17(4) after modifications, were utilized to develop mathematical models for transient heat transfer coefficient and temperature distribution in the electrode and to evaluate the performance of the cooling - system under unsteady state conditions. The empirical formulas developed were then implemented to modifying the developed computer code. Two incompressible coolants were used to study experimentally the effect of the thermophysical properties of the cool-ants on the transient heat transfer coefficient and the thermal contact resistance during start-up and shut-down processes. Coolant mass flow rates were verified from 16 to 88.2 Kg/hr during the transient process when the electrical power supply was gradually increased or decreased in the range (O to 3000 W/sq m). The effect of the thermal contact resistance with a range of stack pressure from O to 3500 KPa was studied.

Ridha, Rabi M. J.↗

NASA NTRS1984

Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.

Kung, K. T.-Y.↗

NASA NTRS1983

New method of determining the onset of ring cracking

A technique is developed for the detection of the onset of circumferential ring cracks in a flat brittle piece of an electrically insulating material. Thin metal films were deposited on both the insulating indentor (diamond) and the insulating brittle flat. The initiation of a ring crack was signified by a step in the monitored electrical contact resistance between the indentor and flat metal films versus the applied force. It was determined by tests performed on polished glass slides using diamond indentors that this technique is both sensitive and reproducible. The onset of crack formation as observed by optical means was found to occur at the same time as the step in the contact resistance when both experiments were carried out simultaneously.

Grzybowski, T. A.↗

NASA NTRS2010

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish .

Courey, Karim J.↗

NASA NTRS2009

Tin Whisker Electrical Short Circuit Characteristics

Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗

NASA NTRS2009

Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage.

Courey, Karim J.↗

NASA NTRS2009

Developing an Empirical Model for Estimating the Probability of Electrical Short Circuits from Tin Whiskers

To comply with lead-free legislation, many manufacturers have converted from tin-lead to pure tin finishes of electronic components. However, pure tin finishes have a greater propensity to grow tin whiskers than tin-lead finishes. Since tin whiskers present an electrical short circuit hazard in electronic components, simulations have been developed to quantify the risk of said short circuits occurring. Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that had an unknown probability associated with it. Note however that due to contact resistance electrical shorts may not occur at lower voltage levels. In our first article we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide's tin plating to determine its finish.

Courey, Karim J.↗

NASA NTRS2001

B and F Signal Conditioner Checkout Unit

ATK Thiokol Propulsion, Test Services uses B&F Signal Conditioning units to provide excitation power and shunt calibration information to the data recording systems. Gage measurements such as force, temperature, pressure, strain, etc. are recorded using this equipment. Approximately 2500 reusable instrumentation B&F Signal Conditioning units were purchased over an interval from 1978 to 1988 at a cost of around $1000 each. Through use and over time, the relay contacts on the signal conditioning mode cards have become corroded, resulting in excessive contact resistance. This causes inaccurate and inconsistent calibration data and could jeopardize the test results. These signal conditioning cards are needed for product testing for an estimated five more years, therefore, it is necessary to develop a solution to isolate the malfunctioning units for repair. The current screening method requires Test Area technicians to check cards manually, however the connections and measurements required for this process are inefficient and time consuming. To resolve this problem, funding was approved to design and build two B&F Signal Conditioner Checkout Units. Each unit will allow technicians to test relay contact resistance on signal conditioning mode cards before they are installed for data collection procedures. This tool will allow Test Area to resolve calibration accuracy problems and extend the life of the data acquisition equipment, as well as save troubleshooting time for the technicians.

Magleby, Alyssa↗

NASA NTRS1995

Sinterless Fabrication Of Contact Pads On InP Devices

Research has shown that with proper choice of material, low-resistance contact pads deposited on solar cells and other devices by improved technique that does not involve sintering. Research directed at understanding mechanisms involved in contact-sintering process has resulted in identification of special group of materials that includes phosphides of gold, silver, and nickel; specifically, Au(2)P(3), AgP(2), and Ni(3)P. Incorporation of phosphide interlayer substantially reduces resistivity between gold current-carrying layer and indium phosphide substrate. Further research indicated only very thin interlayer of any of these compounds needed to obtain low contact resistance, without subjecting contact to destructive sintering process.

Weizer, Victor G.↗

NASA NTRS1979

Electrical hazards posed by graphite fibers

The direct electrical resistance and the electrical contact resistance of graphite fibers released from both burned and unburned Fiberite T300/1034 composite were measured. The voltage at which arcing occurs due to fibers settling on electrical conductors was also determined. On the basis of results obtained, an assessment was made of the hazards posed by graphite fibers to electrical equipment.

Springer, G. S.↗