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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Effect of hydrogen on plasticity of $α$-Fe: A multi-scale assessment

A multi-scale study was carried out to quantify the effect of interstitial hydrogen concentration on plasticity in $α$-Fe. Here, in this work, the influence of hydrogen on the screw dislocation glide behavior was examined across several length-scales. The insights obtained were integrated to provide an accurate continuum description for the effect of hydrogen on the dislocation based plasticity in polycrystalline $α$-Fe. At the outset of this work, a new Fe—H interatomic potential was formulated that enhanced the atomistic estimation of the variation in dislocation glide behavior in presence of hydrogen. Next, the dislocation core reconstruction observed due to the addition of hydrogen using atomistic simulations was validated with the help of large-scale DFT calculations based on the DFT-FE framework. Several atomistic simulations were carried out to comprehensively quantify the effect of hydrogen on the non-Schmid behavior exhibited during the dislocation glide in $α$-Fe. Finally, crystal plasticity simulations were carried out to understand the effect of hydrogen on the meso-scale deformation behavior of polycrystalline $α$-Fe.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Irradiation creep model for α-Fe: Dislocation climb in the presence of stress fields (Final Report)

Irradiation creep is known to be an important process for structural materials in nuclear environments, potentially leading to creep failure at temperatures where thermal creep is generally negligible. While there is a great deal of data for irradiation creep in steels and zirconium alloys in light water reactor conditions, much less is known for first wall materials under fusion energy conditions. Lacking suitable fusion neutron sources for detailed experimentation, modeling, and simulation can help bridge the dose-rate and spectral-effects gap and produce quantifiable expectations for creep deformation of first wall materials under standard fusion conditions. In this work, we present a comprehensive model for irradiation creep created from merging a crystal plasticity representation of the dislocation microstructure and a defect evolution simulator that accounts for the entire cluster dimensionality space. Both approaches are linked by way of a climb velocity that captures dislocation-biased defect absorption and a dislocation strengthening term that reflects the accumulation of defect clusters in the system. We carry out our study in Fe under first wall fusion reactor conditions, characterized by a fusion neutron spectrum at temperatures between 300 and 800°K.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Thermodynamic and Kinetic Modulation of Methylammonium Lead Bromide Crystallization Revealed by In Situ Monitoring

Hybrid organic–inorganic perovskite (HOIP) crystals are promising optoelectronic materials, but little is known about either the thermodynamic and kinetic controls on crystal growth or the underlying growth mechanism(s). Herein, we use fluid cell atomic force microscopy (AFM) and solution nuclear magnetic resonance (NMR) spectroscopy to investigate growth of the model HOIP crystal CH 3 NH 3 PbBr 3 (MAPbBr 3 ) and to determine how formic acid (HCOOH) modulates the thermodynamics and kinetics of growth. The results show that growth of MAPbBr 3 in dimethylformamide (DMF) proceeds through the classical pathway by the spreading of atomic crystal steps generated at screw dislocations on the {100} surface. Temperature dependent step velocity measurements demonstrate that with increasing concentration, HCOOH decreases both the solubility of MAPbBr 3 and the kinetic coefficient (b) of step movement. 1 H-NMR measurements indicate that HCOOH increases the lifetime of the methylammonium (MA + ) ions and promotes the association of MAPbBr 3 , thus tuning the solubility of the perovskite. HCOOH also alters the molecular tumbling motion and bulk diffusion of the MA + ions, possibly via H-bonding. Further, our findings establish a direct correlation between the mesoscale crystal growth kinetics and the molecular-scale interactions between organic additives and constituent ions, providing unprecedented insights for developing predictive syntheses of HOIP crystals with defined size, crystal habit and shape, and defect distribution.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method

X-ray topography measurements on a 100 mm diameter GaN boule grown by the Near Equilibrium AmmonoThermal method revealed an improvement in dislocation density from >1 × 10 6 cm -2 to between 2 × 10 5 and 5 × 10 5 cm -2, an improvement greater than two to five times from seed to growth. This data builds on previous X-ray diffraction and defect selective etching to quantify the reduction in defect density that is closely associated with increasing growth thickness. This result indicates that there is a pathway to further dislocation reduction by increasing growth thickness for GaN crystals including those of 100 mm or larger diameter. Further reduction of the dislocation density of large-area substrates will lead to GaN power devices with reduced leakage current under reverse bias and better device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates

A high-conductivity two-dimensional (2D) hole gas is the enabler of wide-bandgap p-channel transistors. Compared to commonly used AlN template substrates with high dislocation densities, the recently available single-crystal AlN substrates are promising to boost the speed and power handling capability of p-channel transistors based on GaN/AlN 2D hole gases (2DHGs) thanks to the much lower dislocation densities and the absence of thermal boundary resistance. Using plasma-assisted molecular beam epitaxy, we report the observation of polarization-induced high-density 2DHGs in undoped pseudomorphic GaN/AlN heterostructures on the single-crystal AlN substrates with high structural quality and atomic steps on the surface. The high-density 2DHG persists down to cryogenic temperatures with a record high mobility exceeding 280 cm 2 /V s and a density of 2.2 × 10 13 /cm 2 at 10 K. These results shed light on aspects of improving 2D hole mobilities and indicate significant potential of GaN/AlN 2DHG grown on bulk AlN substrates for future high performance wide-bandgap p-channel transistors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

From ammonium Hexahalorhenates(IV) to nanocrystalline rhenium metal: A combined thermal, diffraction and microscopic analysis

Rhenium metal powder is a material of industrial importance. Several industrial and laboratory methods have been developed for the preparation of ultrafine Re metal powder and nanoparticles. The present study provides a better understanding of the characteristic and formation of Re metal powder from the decomposition of (NH4)2ReX6 salt (X = F, Cl, Br, I) at high temperature in inert atmosphere. Such analysis resulted in the formation of nanocrystalline Re metal as characterized by powder XRD. Williamson-Hall, Scherrer, and Williamson-Smallman methods were employed to study the effect of crystallize size, lattice strain, and dislocation density as analyzed from powder XRD peak broadening. Here, the morphology and composition of the metal were analyzed using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Disentangling Coexisting Structural Order Through Phase Lock-In Analysis of Atomic-Resolution STEM Data

As a real-space technique, atomic-resolution STEM imaging contains both amplitude and geometric phase information about structural order in materials, with the latter encoding important information about local variations and heterogeneities present in crystalline lattices. Such phase information can be extracted using geometric phase analysis (GPA), a method which has generally focused on spatially mapping elastic strain. Here we demonstrate an alternative phase demodulation technique and its application to reveal complex structural phenomena in correlated quantum materials. As with other methods of image phase analysis, the phase lock-in approach can be implemented to extract detailed information about structural order and disorder, including dislocations and compound defects in crystals. Extending the application of this phase analysis to Fourier components that encode periodic modulations of the crystalline lattice, such as superlattice or secondary frequency peaks, we extract the behavior of multiple distinct order parameters within the same image, yielding insights into not only the crystalline heterogeneity but also subtle emergent order parameters such as antipolar displacements. When applied to atomic-resolution images spanning large (~0.5 × 0.5 μm 2 ) fields of view, this approach enables vivid visualizations of the spatial interplay between various structural orders in novel materials.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Lorentz electron ptychography for imaging magnetic textures beyond the diffraction limit

Nanoscale spin textures, especially magnetic skyrmions, have attracted intense interest as candidate high-density and power-efficient information carriers for spintronic devices. Facilitating a deeper understanding of sub-100 nm to atomic-scale spin textures requires more advanced magnetic imaging techniques. Here, we demonstrate a Lorentz electron ptychography (LEP) method which can enable high-resolution, high-sensitivity magnetic field imaging for widely-available electron microscopes. The resolution of LEP is not limited by the usual diffraction limit of the lens optics, but instead is determined by the maximum scattering angle at which a statistically meaningful dose can still be recorded – this can be an improvement of up to 2 to 6 times depending on the allowable dose. Using FeGe as a model system, we realize a more accurate magnetic field measurement of skyrmions with an improved spatial resolution and sensitivity by also correcting the probe damping effects from the imaging optics via LEP. This allows us to directly resolve subtle internal structures of magnetic skyrmions near the skyrmion cores, boundaries, and dislocations in an FeGe single crystal. Our study establishes a quantitative, high-resolution magnetic microscopy technique that can reveal the nanoscale spin textures, especially magnetization discontinuities and topological defects in nanomagnets. In conclusion, the technique’s high dose efficiency should also make it well-suited for the exploration of magnetic textures in electron radiation-sensitive materials such as organic or molecular magnets.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Ion beam-induced bending of TiO 2 nanowires with bead-like and prismatic shapes

Ion beam irradiation is a promising method to manipulate the composition and shape of nanowires. It causes the formation of crystal defects like vacancies and dislocations, and consequently, a volume expansion within the irradiated region, giving rise to the nanowire bending. The bending effect has been extensively discussed within nanowires with different diameters under ion beams with varying energies and ion fluences. However, the behaviors of nanowires with complicated shapes, which may have non-uniform irradiated regions due to the changing angle of incidence and shadowing effect, have remained largely unknown. Herein, the structural changes and bending of TiO 2 nanowires with both bead-like and prismatic shapes are investigated under a Ga + ion beam. The multi-faceted morphology, and consequently, varying angles of incidence, result in inhomogeneous irradiation and volume expansion. As a result, significant bending is only observed in prismatic nanowires. Since irradiation is confined within the half of nanowires facing the ion beam, the bending of nanowires is reversible by changing the direction of the ion beam. In order to provide insights into the tailoring composition and morphology of nanowires, we anticipate that this finding can establish the beam analog at the nanoscale, the bending of which can be tuned by ion irradiation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Physics-based model of irradiation creep for ferritic materials under fusion energy operation conditions

Irradiation creep is known to be an important process for structural materials in nuclear environments, potentially leading to creep failure at temperatures where thermal creep is generally negligible. While there is a great deal of data for irradiation creep in steels and zirconium alloys in light water reactor conditions, much less is known for first wall materials under fusion energy conditions. Lacking suitable fusion neutron sources for detailed experimentation, modeling, and simulation can help bridge the dose-rate and spectral-effects gap and produce quantifiable expectations for creep deformation of first wall materials under standard fusion conditions. In this paper, we develop a comprehensive model for irradiation creep created from merging a crystal plasticity representation of the dislocation microstructure and a defect evolution simulator that accounts for the entire cluster dimensionality space. Both approaches are linked by way of a climb velocity that captures dislocation-biased defect absorption and a dislocation strengthening term that reflects the accumulation of defect clusters in the system. Here, we carry out our study in Fe under first wall fusion reactor conditions, characterized by a fusion neutron spectrum with average recoil energies of 20 keV and a damage dose rate of ≈3×10 –7 dpa/s at temperatures between 300 and 800 K.

36 MATERIALS SCIENCE↗
DOE OSTI2026

AlGaN/GaN Core-Shell Nanofin Diodes on Si Substrates for Vertical GaN Electronics

We demonstrate plasma-assisted MBE selective-area growth of GaN/AlGaN core-shell structures on Si(111) as a path to vertical GaN devices. The selective-area growth enables the full vertical and uniform core-shell fin structures to be realized in a continuous growth without breaking vacuum. TEM images and EDS mapping of the core-shell structures show well-aligned crystal structure and sharp heterointerfaces. Dislocation filtering was observed in STEM imaging of the fin structure. P-N junction diodes fabricated with GaN/AlGaN core-shell structures reveal ideality factors as low as 1.5, and the reverse-bias leakage is consistent with trap-assisted space-charge-limited conduction. While practical challenges exist, including material-related leakage, growth-related challenges and optimization, this demonstration of p-n junction by this method may provide a path to vertical Superjunction device concepts in GaN and related materials.

Xiong, Juncheng [University of Notre Dame, IN (Uni↗
DOE OSTI2023

Charge trapping correction and energy performance of the Majorana Demonstrator

P-type point contact (PPC) high-purity germanium detectors are an important technology in astroparticle and nuclear physics due to their superb energy resolution, low noise, and pulse shape discrimination capabilities. Analysis of data from the Majorana Demonstrator, a neutrinoless double-β decay experiment deploying PPC detectors enriched in 76 Ge, has led to several novel improvements in the analysis of PPC signals. Here, in this work we discuss charge trapping in PPC detectors and its effect on energy resolution. Small dislocations or impurities in the crystal lattice result in trapping of charge carriers from an ionization event of interest, attenuating the signal, and degrading the measured energy. We present a modified digital pole-zero correction to the signal energy estimation that counters the effects of charge trapping and improves the energy resolution of the Majorana Demonstrator by approximately 30 % to around 2.4 keV full width at half-maximum at 2039 keV, the 76 Ge Q value. An alternative approach achieving similar resolution enhancement is also presented.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Medium-Range Order Resists Deformation in Metallic Liquids and Glasses

In crystals, lattice defects, such as dislocations, control mechanical deformation. Similarly, it is widely believed that even in glasses and liquids some kinds of defects, strongly disordered regions, play a major role in deformation. To identify defects researchers focused on the nature of the short-range order (SRO) in the nearest neighbor cage of atoms. However, recent results by experiment, simulation and theory raise serious questions about this assumption. They suggest that the atomic medium-range order (MRO) provides resistance against flow at the atomic level. Because the MRO is a bulk property, it implies that defects play only a limited role. This new insight is supported by the density wave theory which shows that the MRO is driven by a top-down global force, rather than being a consequence of the SRO in the bottom-up manner, and the MRO provides stiffness to resist deformation. We briefly summarize the density wave theory, show that the MRO is related to ductility of metallic glasses, and discuss the implications on the role of the MRO in the atomic-level mechanism of deformation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Crystal plasticity modeling for the strengthening effect of multilayered copper–graphene nanocomposites

The paper explores plastic deformation mechanisms in metal–graphene nanocomposites, illustrating their material strengthening effects through a crystal plasticity finite element (CPFE) model. This model is compared with published experimental results, which have previously shown that the two-dimensional shape of graphene effectively controls dislocation motion and significantly enhances the strength of metals. Simulated nanopillar compression tests, using a physics-based CP model that incorporates surface nucleation and single-arm source dislocation mechanisms, help us understand dislocation motions at submicron length scales. The crystal plasticity models are applied to nanolayered composites with copper grain layers and monolayer graphene, featuring repeat layer spacings of 200 nm, 125 nm, and 70 nm, respectively. This study quantifies the accumulation of dislocations at the graphene interfaces, contributing to the ultra-high strength of copper–graphene composites. Furthermore, a Hall–Petch-like correlation is established between yield strength and the number of embedded graphene layers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Electron beam heating as a tool for fabricating lattice engineered crystals in glass [Invited]

Laser heating is well-established to impart optical functionality into glass by local modification and crystallization. In this paper, we demonstrate electron beam heating in scanning and transmission microscopes as an alternative for the local crystallization of Sb 2 S 3 in Sb-S-I glasses as a model system. Governed by different absorption physics, the electron beam expands morphological control of crystal cross section relative to laser, producing nanoscale (∼50 nm) single crystal architectures. We also report the effects of accelerating voltage and probe current and characterize the curved lattice of crystals formed in glass with electron diffraction techniques.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Slip-free multiplication and complexity of dislocation networks in FCC metals

Abstract During plastic deformation of crystalline solids, intricate networks of dislocation lines form and evolve. To capture dislocation density evolution, prominent theories of crystal plasticity assume that 1) multiplication is driven by slip in active slip systems and 2) pair-wise slip system interactions dominate network evolution. In this work, we analyze a massive database of over 100 discrete dislocation dynamics simulations (with cross-slip suppressed), and our findings bring both of these assumptions into question. We demonstrate that dislocation multiplication is commonly observed on slip systems with no applied stress and no plastic strain rate, a phenomenon we refer to as slip-free multiplication. We show that while the formation of glissile junctions provides one mechanism for slip-free multiplication, additional mechanisms which account for the influence of coplanar interactions are needed to fully explain the observations. Unlike glissile junction formation which results from a binary reaction between a pair of slip systems, these new multiplication mechanisms require higher order reactions that lead to complex network configurations. While these complex configurations have not been given much attention previously, they account for about 50% of the line intersections in our database.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Realignment and suppression of charge density waves in the rare-earth tritellurides 𝑅⁢Te 3 (𝑅 = La, Gd, Er)

The rare-earth tritellurides have a rich phase diagram that includes charge density waves (CDWs), superconductivity, and magnetic order, offering a platform to study the interplay between these phases on a square-net system. Prior studies have shown that defects can affect the CDW characteristics in these materials, yet coupling between the CDW order and the underlying microstructure has not been studied at the nanoscale. Here we use scanning transmission electron microscopy at cryogenic temperatures to directly visualize the effects of defects on the CDW order and provide a spatially resolved microscopic correlation between the CDW transition and structural defects. Here, we show that in the presence of extended defects, such as dislocations and stacking faults, the weak orthorhombicity of the rare-earth tritellurides is lost and the material becomes pseudotetragonal. Since the orthorhombicity acts as a symmetry breaking field for the CDW transitions in rare-earth tritellurides, the presence of these extended defects modulates the energetics of the CDWs and suppresses the ground-state CDW phase at low temperature.

Charge density waves↗