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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Synchrotron X-ray metrology of dopant distribution and oxidation state in high pressure CVD grown TM 2+ :ZnSe optical fibers

High pressure chemical vapor deposition (HPCVD) has shown to be a promising method for producing Cr 2+ :ZnSe and Fe 2+ :ZnSe mid-IR optical fiber lasers. The oxidation state of the dopants and their spatial homogeneity are critical for the characterization of effective fiber laser performance; however, this is challenging for small fiber cores and small doping concentrations. We demonstrate using synchrotron micro X-ray fluorescence (XRF) mapping to study the distribution of the dopants throughout the fiber cross-sections. Furthermore, we study the local chemical environment of these unique fiber structures using micro X-ray near edge absorption spectroscopy (XANES). Our study reveals that transition metal doped ZnSe deposited using HPCVD has nanoscale dopant aggregation although the material is chemically identical to the commercially produced diffusion doped laser crystals, as indicated by the presence +2 oxidation state of the dopants. This work demonstrates the power of synchrotron-based X-ray techniques for use as metrology tools for improving the performance of laser materials in fiber geometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

A Study of the Radiation Tolerance of CVD Diamond to 70 MeV Protons, Fast Neutrons and 200 MeV Pions

We measured the radiation tolerance of commercially available diamonds grown by the Chemical Vapor Deposition process by measuring the charge created by a 120 GeV hadron beam in a 50 μm pitch strip detector fabricated on each diamond sample before and after irradiation. We irradiated one group of samples with 70 MeV protons, a second group of samples with fast reactor neutrons (defined as energy greater than 0.1 MeV), and a third group of samples with 200 MeV pions, in steps, to (8.8±0.9) × 1015 protons/cm2, (1.43±0.14) × 1016 neutrons/cm2, and (6.5±1.4) × 1014 pions/cm2, respectively. By observing the charge induced due to the separation of electron–hole pairs created by the passage of the hadron beam through each sample, on an event-by-event basis, as a function of irradiation fluence, we conclude all datasets can be described by a first-order damage equation and independently calculate the damage constant for 70 MeV protons, fast reactor neutrons, and 200 MeV pions. We find the damage constant for diamond irradiated with 70 MeV protons to be 1.62±0.07(stat)±0.16(syst)× 10−18 cm2/(p μm), the damage constant for diamond irradiated with fast reactor neutrons to be 2.65±0.13(stat)±0.18(syst)× 10−18 cm2/(n μm), and the damage constant for diamond irradiated with 200 MeV pions to be 2.0±0.2(stat)±0.5(syst)× 10−18 cm2/(π μm). The damage constants from this measurement were analyzed together with our previously published 24 GeV proton irradiation and 800 MeV proton irradiation damage constant data to derive the first comprehensive set of relative damage constants for Chemical Vapor Deposition diamond. We find 70 MeV protons are 2.60 ± 0.29 times more damaging than 24 GeV protons, fast reactor neutrons are 4.3 ± 0.4 times more damaging than 24 GeV protons, and 200 MeV pions are 3.2 ± 0.8 more damaging than 24 GeV protons. We also observe the measured data can be described by a universal damage curve for all proton, neutron, and pion irradiations we performed of Chemical Vapor Deposition diamond. Finally, we confirm the spatial uniformity of the collected charge increases with fluence for polycrystalline Chemical Vapor Deposition diamond, and this effect can also be described by a universal curve.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Calculation of residual principal stresses in CVD boron on carbon filaments

A three-dimensional finite element model of the chemical vapor deposition of boron on a carbon substrate (B/C) is developed. The model includes an expansion of the boron after deposition due to atomic rearrangement and includes creep of the boron and carbon. Curves are presented showing the variation of the principal residual stresses and the filament elongation with the parameters defining deposition strain and creep. The calculated results are compared with experimental axial residual stress and elongation measurements made on B/C filaments. For good agreement between calculated and experimental results, the deposited boron must continue to expand after deposition, and the build up of residual stresses must be limited by significant boron and carbon creep rates.

Behrendt, D. R.↗
NASA NTRS1980

CVD-produced boron filaments

A technique for producing boron filaments with an average tensile strength of 6.89 GPa has been developed which involves longitudinal splitting of the filament and core (substrate) removal by etching. Splitting is accomplished by a pinch wheel device which continuously splits filaments in lengths of 3.0 m by applying a force to the side of the filament to create a crack which is then propagated along the axis by a gentle sliding action. To facilitate the splitting, a single 10 mil tungsten substrate is used instead of the usual 0.5 mil substrate. A solution of hot 30% hydrogen peroxide is used to remove the core without attacking the boron. An alternative technique is to alter the residual stress by heavily etching the filament. Average strengths in the 4.83-5.52 GPa range have been obtained by etching an 8 mil filament to 4 mil.

Wawner, F. E.↗
NASA NTRS1983

Plasma-enhanced CVD silicon nitride antireflection coatings for solar cells

Multilayer plasma-enhanced chemical vapor deposition (PECVD) silicon nitride antireflection coatings were deposited on space quality silicon solar cells. Preliminary experiments indicated that multilayer coatings decreased the total reflectance of polished silicon from 35 percent to less than 3 percent over the spectral range 0.4-1.0 micron. The solar cell energy conversion efficiency was increased from an average of 8.84 percent to an average of 12.63 percent.

Johnson, C. C.↗
NASA NTRS1984

High-efficiency solar cells fabricated by vacuum MO-CVD

High-efficiency, monolithic, two-color, three-terminal solar cells were fabricated by a novel growth technique, vacuum metal-organic chemical vapor deposition. The technique uses the expensive metal alkyls efficiently and toxic gases sparingly. The fact that the outer chamber is constructed of nonbreakable stainless steel is an attractive safety feature associated with this deposition system.

Fraas, L. M.↗
NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗
NASA NTRS1987

Laboratory studies of binary salt CVD in combustion gas environments

A flash-evaporation technique is used to obtain vapor deposition characteristics for the binary alkali sulfates K2SO4 + Na2SO4 at 1 atm above 1100 K. The experimental equipment and techniques are described, and preliminary results are reported which indicate that this experimental technique meets most of the research requirements for studying multicomponent systems of current interest. The various deposition rate effects of introducing additives and the relevant inferences of condensate composition are presented, and the theoretical implications are discussed. It is concluded that alkali sulfate deposition and vaporization in combustion environments are inevitably influenced by chemical reactions such as hydroxide formation, and that solution nonideality is important even for homologous alkali-salt mixtures.

Liang, Baishen↗
NASA NTRS1991

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

Powell, J. Anthony↗
NASA NTRS1991

Microstructural and strength stability of CVD SiC fibers in argon environment

The room temperature tensile strength and microstructure of three types of commercially available chemically vapor deposited silicon carbide fibers were measured after 1, 10, and 100 hour heat treatments under argon pressures of 0.1 to 310 MPa at temperatures to 2100 C. Two types of fiber had carbon-rich surface coatings and the other contained no coating. All three fiber types showed strength degradation beyond 1400 C. Time and temperature of exposure had greater influence on strength degradation than argon pressure. Recrystallization and growth of near stoichiometric SiC grains appears to be the dominant mechanism for the strength degradation.

Bhatt, Ramakrishna T.↗
NASA NTRS1991

Microstructural and strength stability of CVD SiC fibers in argon environments

The room temperature tensile strength and microstructure of three types of commercially available chemically vapor deposited silicon carbide fibers were measured after 1, 10, and 100 hour heat treatments under argon pressures of 0.1 to 310 MPa at temperatures to 2100 C. Two types of fiber had carbon-rich surface coatings and the other contained no coating. All three fiber types showed strength degradation beyond 1400 C. Time and temperature of exposure had greater influence on strength degradation than argon pressure. Recrystallization and growth of near stoichiometric SiC grains appears to be the dominant mechanism for the strength degradation.

Bhatt, Ramakrishna T.↗