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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Nanoscale pressure sensors realized from suspended graphene membrane devices

We study the transport properties of graphene layers placed over ∼200 nm triangular holes via attached electrodes under applied pressure. We find that the injected current division between counter electrodes depends on pressure and can be used to realize a nanoscale pressure sensor. Estimating various potential contributions to the resistivity change of the deflected graphene membrane including piezoresistivity, changing gate capacitance, and the valley Hall effect due to the pressure-induced synthetic magnetic field, we find that the valley Hall effect yields the largest expected contribution to the longitudinal resistivity modulation for accessible device parameters. Such devices in the ballistic transport regime may enable the realization of tunable valley polarized electron sources.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Evaluate humidity sensing properties of novel TiO{sub 2}–WO{sub 3} composite material

Graphical abstract: TiO{sub 2}–WO{sub 3} (1:1) showed better humidity sensing properties than others within the range of 12–90% relative humidity (RH), the response and recovery time were about 20 s and 160 s, respectively. Compared to the previous studies, the prepared sensor exhibits higher sensitivity (S = 451) and the low hysteresis value was around 0.13% at 32% RH. - Highlights: • Novel TiO{sub 2}–WO{sub 3} composite material was prepared for humidity sensor. • The sensor exhibits higher sensitivity (S = 451). • Low hysteresis value was around 0.13% at 32% RH. - Abstract: A novel TiO{sub 2}–WO{sub 3} composite material was prepared using a different proportion of TiO{sub 2} and WO{sub 3} to that investigated in previous studies. The obtained mesoporous material was characterized using X-ray diffraction, Fourier transform infrared spectrometry, transmission electron microscopy, energy dispersive X-ray spectroscopy, and N{sub 2} adsorption-desorption techniques. The humidity-sensing properties were measured using an inductance, capacitance and resistance analyzer. The results demonstrated that the TiO{sub 2}–WO{sub 3} sample with a ratio of 1:1 showed better humidity sensing properties. Compared to previous studies, the prepared sensor exhibited higher sensitivity (S = 451) and the lower hysteresis value was around 0.13% at 32% RH. Complex impedance analysis indicated that the enhanced humidity sensitivity was probably due to spherical Brunauer–Emmett–Teller surface area and the hetero-junction between TiO{sub 2}–WO{sub 3} thin films, while the impedance varied about three orders of magnitude. Our results demonstrated the potential application of TiO{sub 2}–WO{sub 3} composite for fabricating high performance humidity sensors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Design and Characterization of a Burst Mode 20 Mfps Low Noise CMOS Image Sensor

This paper presents a novel ultra-high speed, high conversion-gain, low noise CMOS image sensor (CIS) based on charge-sweep transfer gates implemented in a standard 180 nm CIS process. Through the optimization of the photodiode geometry and the utilization of charge-sweep transfer gates, the proposed pixels achieve a charge transfer time of less than 10 ns without requiring any process modifications. Moreover, the gate structure significantly reduces the floating diffusion capacitance, resulting in an increased conversion gain of 183 µV/e−. This advancement enables the image sensor to achieve the lowest reported noise of 5.1 e− rms. To demonstrate the effectiveness of both optimizations, a proof-of-concept CMOS image sensor is designed, taped-out and characterized.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Electronic Scanning Strategies in Adaptive Electrical Capacitance Volume Tomography: Tradeoffs and Prospects

Electrical Capacitance Volume Tomography (ECVT) has been applied for imaging of multiphase flows found in industrial applications. The ill-posed nature of the image reconstruction problem in ECVT and the consequent low resolution can be alleviated by employing electronic scanning enabled by electrode segmentation and reconfiguration during data acquisition. Here we study electronic scanning strategies that mimic physical rotation and shifting of the sensor along its symmetry axis. First, we study the feasibility of electronic scanning by analyzing the capacitance transducer circuit in SPICE. Then, we simulate electronic scanning using the finite element method for different electrode shapes, for which we compare the image reconstruction results and acquisition time. We find a noticeable improvement in image resolution for the scanning cases over conventional ECVT. Lastly, among the scanning cases, we emphasize a particular electrode shape that provides the best image resolution along with the minimal amount of acquisition time.

47 OTHER INSTRUMENTATION↗
DOE OSTI2019

Self-powered Wireless Dual-mode Langasite Sensor for Pressure/Temperature Monitoring of Nuclear Reactors

Safety issues in nuclear power plants are of extreme importance. Numerous sensors are used within nuclear power plants for sensing and monitoring of its critical operation parameters. As currently implemented, during massive losses of power across the plant in accidents, the backup batteries for the monitoring sensors will ultimately be drained and can cease to operate. The overall objective of this NEUP project is to develop a novel self-powered wireless hybrid sensor which can accurately monitor both pressure and temperature using a single device, even in the extreme harsh environments of severe nuclear accidents, without the requirement of external electricity. At Virginia Tech side, a heat pipe assisted thermoelectric generator (TEG) energy harvester and associated power management and data transmission circuits were developed. The energy harvester can produce electrical power continuously, even in loss of plant and external power situations, providing power for important data transmission for accident diagnosis. The self-powered sensing system could be integrated directly onto key nuclear components including pipes, pump housings, heat exchangers, reactor vessels, and shielding structures inside and outside of the reactor core. Two TEG based energy harvesters which can work in relatively low (50-250 ºC) and high temperature ranges (250-350 ºC) were established and tested. In the prototypes, heat pipes were introduced to reduce the heat resistances of the device at the hot and cold ends. The power output of the heat pipe assisted TEG module is 2.22 W, which is 6 times more than one using an aluminum rod. In-lab tests showed that these devices canmeet the requirement to power the sensors and circuit during normal and off-normal conditions.Amodel was then built to analyze the thermal network in the energy harvester, and was used to optimize its performance and reduce its geometry size. The design and testing of the vibrational energy harvester were completed. The harvester, has shown to effectively increase the vibrational potential of the main coolant pump, though it has been shown that thermal energy has a much higher potential for the powering of sensors. In this project, a self-start charger circuit for the energy harvester was designed to regulate and manage the power. An energy storage element was incorporated into the energy harvesting module for sensors and wireless transceivers in an off-normal situation. The signal conditioning and wireless communication electronic circuits were developed and tested in the lab. An important consideration for an energy harvester within a nuclear power plant is the level of radiation it will encounter during operation. The two main sources of radiation in a nuclear power plant are gamma and neutron radiation. Aradiation experiment was conducted in the Westinghouse Electric Company during which the prototypes were placed in a 106 rad radiation environment to test their ability to operate in the extreme environment. The results showed that this level of radiation had little effect on the performance of the TEGmaterial and heat pipe heat exchanging system. Its influence on the circuit was still under research, however the need for more development on radiation hardened electronics is needed. Pressure measurement based on piezoelectric crystal resonators has advantages over the commercially available methods like capacitive, electromagnetic, optical, potentiometric, and piezo resistive strain gauges. Since the output of piezoelectric based sensors are digital in format, it has a very high resolution, high accuracy, and long-term stability. Quartz is one of the commonly used piezoelectric material in digital pressure sensors design. This material is elastic in nature, providing high stability, high repeatability, high elasticity, repeatable mechanical behavior for many cycles of operation, and is free of hysteresis. The quartz resonator has a high Q, which means that very high vibration can be driven with the very low electric power. Langasite (LGS) is a new promising piezoelectric material that combines the advantageous properties of quartz with a better performance at high temperatures. LGS will not undergo any phase transitions up to its melting temperature of 1473 C, and hence, the application of Langasite in measuring pressure at high temperatures is promising. In this project, the design and fabrication of the piezo oscillator crystal for temperature and pressure measurement has been completed. The entire sensor has been fabricated and tested to see its sensitivity to temperature and pressure changes. The design and optimization of the radiation shielding systems that can effective protect the duel-mode Langasite sensor inside reactor core were demonstrated. To maximize the radiation shielding effectiveness, different types of materials are investigated based upon recent developments of radiation shielding systems including aluminum + Boron carbide and bismuth borosilicate glass B2O3 in addition to tungsten/B4C. New materials based upon metatheses is included as potential shielding to mitigate neutron fluencies. The radiation shielding effectiveness of selected composites are evaluated within a broader neutron spectrum from thermal, epithermal, fast (1 MeV) and 15 MeV neutrons. Performance analysis was also conducted to evaluate the effects of selected composite systems.Aconceptual design was also proposed for the packaging and integration of the radiation shielding system with the sensor, and its applicability within the reactor core was discussed. At end of the project, all components necessary for a complete sensing and monitoring system, including a langasite sensor, electrodes, the TEG harvester, an energy storage device, and power management and transmission electronics were integrated to demonstrate feasibility in powering the sensor. Finally, integration of each component into a full package, and a full demonstration were done.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2016

Radiation hardness and precision timing study of silicon detectors for the CMS High Granularity Calorimeter (HGC)

The high luminosity upgraded LHC or Phase-II is expected to increase the instantaneous luminosity by a factor of 10 beyond the LHC's design value, expecting to deliver 250 fb –1 per year for a further 10 years of operation. Under these conditions the performance degradation due to integrated radiation dose will need to be addressed. The CMS collaboration is planning to upgrade the forward calorimeters. The replacement is called the High Granularity Calorimeter (HGC) and it will be realized as a sampling calorimeter with layers of silicon detectors interleaved. The sensors will be realized as pad detectors with sizes of less that ~1.0 cm 2 and an active thickness between 100 and 300 μm depending on the position, respectively, the expected radiation levels. For an integrated luminosity of 3000 fb –1 , the electromagnetic calorimetry will sustain integrated doses of 1.5 MGy (150 Mrads) and neutron fluences up to 10 16 neq/cm 2 . A radiation tolerance study after neutron irradiation of 300, 200, and 100 μm n-on-p and p-on-n silicon pads irradiated to fluences up to 1.6×10 16 neq/cm 2 is presented. In this work, the properties of these diodes studied before and after irradiation were leakage current, capacitance, charge collection efficiency, annealing effects and timing capability. The results of these measurements validate these sensors as candidates for the HGC system.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

A sensing material-free and simple readout MEMS sensor for detecting Helium

Abstract In this work, we report a method that enables a standard electrostatic MEMS device to perform complex sensing functionalities, such as detecting the presence of helium without a sensing material or a conditioning circuit. Helium is a noble, odorless, non-reactive gas that is very challenging to detect. It is used in critical applications such as storing nuclear fuel waste inside a dry cask. In these applications, its leakage from the dry cask may indicate the cask's safe operation's degradation. A departure from the common practice of exciting the MEMS around its mechanical resonance, the method is based on exciting the MEMS around its electrical resonance circuit. This method shows that the tiny difference between the air dielectric constant (1.00059) and helium (1.000067) corresponding to only a few Femtofarad level capacitances produces a 25 mV difference without a conditioning circuit. Simulation results confirmed those findings and explored the sensor response at different operation conditions. This method eliminates the need for a heated microstructure and the need for absorption material. This method is not limited to gas sensing. It can be applied to other sensing mechanisms, such as acceleration and pressure measurements, and eliminate the complex circuit to read small capacitance in these applications.

Mohaidat, Sulaiman↗
DOE OSTI2021

Initial tests of large format sensors for the ATLAS ITk strip tracker

For the construction of the Inner Tracker (ITk) as part of the phase-II upgrade programme of the ATLAS detector for the High-Luminosity (HL) LHC, batches of Long Strip (LS) and Short Strip (SS) n + -in-p type micro-strip sensors have been produced by Hamamatsu Photonics and Infineon. The full size sensors measure approximately 98 × 98 mm 2 and are designed and engineered for tolerance against the 9.7 × 10 14 1 MeV n eq /cm 2 fluence expected at the HL-LHC, including a safety factor of 1.5. Each sensor has 2 or 4 columns of 1280 individual channels arranged at 75.5 μ m horizontal pitch. To ensure the sensors comply with their specifications, a Quality Control (QC) procedure has been implemented, comprising measurements on every individual sensor as well as on a sample basis. Every sensor is subjected to an initial visual inspection, after which the full surface of the sensor is captured with very high resolution by an automated camera setup. Non-contact metrology is performed to obtain the sensor surface profile. Electrical measurements establishing the reverse bias leakage current and depletion voltage are then conducted automatically. Sample sensors from every batch are subjected to 40 h of leakage stability checks in controlled atmosphere, and tests on every channel measuring leakage current, coupling capacitance and bias resistance are done. The recorded results are uploaded to a production database following data quality checks. In this paper, QC test validation data and the compiled results for the first batches of production grade sensors are presented. The QC protocol was validated, and the first production sensors were confirmed to be within specification. The results are compared to those from the previous generation of prototype sensors.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Optics-Free Chip-Scale Intraoperative Imaging Using NIR-Excited Upconverting Nanoparticles

Here we present an optics-free CMOS image sensor that incorporates a novel time-gated dual-photodiode pixel design to allow filter- and lens-less image acquisition of near-infrared-excited (NIR-excited) upconverting nanoparticles. Recent biomedical advances have highlighted the benefits of NIR excitation, but NIR interaction with silicon has remained a challenge, even with high-performance optical blocking filters. Using a secondary diode and a dual-photodiode design, this sensor is able to remove the 100s of mV of NIR background on pixels and bring it down to single-digit mV level, nearing its noise floor of 2.2 mV rms, not achievable with any optical filter. Non-linear effects of background cancellation using the diode pair has been mitigated using an initial one-time pixel-level curve fitting and calibration in a post-processing setting. This imager comprises a highly linear 11 fF metal-oxide-metal (MOM) capacitor and includes integrated angle-selective gratings to reject oblique light and enhance sharpness. Each pixel also includes two distinct correlated double sampling schemes, to remove low frequency flicker noise and systematic offset in the datapath. We demonstrate the performance of this imager using pulsed NIR-excited upconverting nanoparticles on standard United-States-Air-Force (USAF) resolution targets and achieve an SNR of 15 dB, while keeping NIR background below 6 mV. This 36-by-80-pixel array measures only 2.3 mm by 4.8 mm and can be thinned down to 25 µm, allowing it to become surgically compatible with intraoperative instruments and equipment, while remaining optics-free.

42 ENGINEERING↗
DOE OSTI2014

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (L{sub OV}) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on L{sub OV}. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Bisphenol-A sensors on polyimide fabricated by laser direct writing for on-site river water monitoring at attomolar concentration

This work presents an aptamer-based, highly sensitive and specific sensor for atto- to femtomolar level detection of bisphenol A (BPA). Because of its widespread use in numerous products, BPA enters surface water from effluent discharges during its manufacture, use, and from waste landfill sites throughout the world. On-site measurement of BPA concentrations in water is important for evaluating compliance with water quality standards or environmental risk levels of the harmful compound in the environment. The sensor in this work is porous, conducting, interdigitated electrodes that are formed by laser-induced carbonization of flexible polyimide sheets. BPA-specific aptamer is immobilized on the electrodes as the probe, and its binding with BPA at the electrode surface is detected by capacitive sensing. The binding process is aided by ac electroosmotic effect that accelerates the transport of BPA molecules to the nanoporous graphene-like structured electrodes. The sensor achieved a limit of detection of 58.28 aM with a response time of 20 s. The sensor is further applied for recovery analysis of BPA spiked in surface water. In conclusion, this work provides an affordable platform for highly sensitive, real time, and field-deployable BPA surveillance critical to the evaluation of the ecological impact of BPA exposure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Surface-Mediated Interconnections of Nanoparticles in Cellulosic Fibrous Materials toward 3D Sensors

Fibrous materials serve as an intriguing class of 3D materials to meet the growing demands for flexible, foldable, biocompatible, biodegradable, dis- posable, inexpensive, and wearable sensors and the rising desires for higher sensitivity, greater miniaturization, lower cost, and better wearability. The use of such materials for the creation of a fibrous sensor substrate that interfaces with a sensing film in 3D with the transducing electronics is however difficult by conventional photolithographic methods. Here, a highly effective pathway featuring surface-mediated interconnection (SMI) of metal nanoclusters (NCs) and nanoparticles (NPs) in fibrous materials at ambient conditions is demon- strated for fabricating fibrous sensor substrates or platforms. Bimodally distrib- uted gold–copper alloy NCs and NPs are used as a model system to demonstrate the semiconductive-to-metallic conductivity transition, quantized capacitive charging, and anisotropic conductivity characteristics. Upon coupling SMI of NCs/NPs as electrically conductive microelectrodes and surface-mediated assembly (SMA) of the NCs/NPs as chemically sensitive interfaces, the resulting fibrous chemiresistors function as sensitive and selective sensors for gaseous and vaporous analytes. Finally, this new SMI–SMA strategy has significant implications for manufacturing high-performance fibrous platforms to meet the growing demands of the advanced multifunctional sensors and biosensors.

36 MATERIALS SCIENCE↗
DOE OSTI2016

“Virtual IED sensor” at an rf-biased electrode in low-pressure plasma

Energy distribution and the flux of the ions coming on a surface are considered as the key-parameters in anisotropic plasma etching. Since direct ion energy distribution (IED) measurements at the treated surface during plasma processing are often hardly possible, there is an opportunity for virtual ones. This work is devoted to the possibility of such indirect IED and ion flux measurements at an rf-biased electrode in low-pressure rf plasma by using a “virtual IED sensor” which represents “in-situ” IED calculations on the absolute scale in accordance with a plasma sheath model containing a set of measurable external parameters. The “virtual IED sensor” should also involve some external calibration procedure. Applicability and accuracy of the “virtual IED sensor” are validated for a dual-frequency reactive ion etching (RIE) inductively coupled plasma (ICP) reactor with a capacitively coupled rf-biased electrode. The validation is carried out for heavy (Ar) and light (H{sub 2}) gases under different discharge conditions (different ICP powers, rf-bias frequencies, and voltages). An EQP mass-spectrometer and an rf-compensated Langmuir probe (LP) are used to characterize plasma, while an rf-compensated retarded field energy analyzer (RFEA) is applied to measure IED and ion flux at the rf-biased electrode. Besides, the pulsed selfbias method is used as an external calibration procedure for ion flux estimating at the rf-biased electrode. It is shown that pulsed selfbias method allows calibrating the IED absolute scale quite accurately. It is also shown that the “virtual IED sensor” based on the simplest collisionless sheath model allows reproducing well enough the experimental IEDs at the pressures when the sheath thickness s is less than the ion mean free path λ{sub i} (s < λ{sub i}). At higher pressure (when s > λ{sub i}), the difference between calculated and experimental IEDs due to ion collisions in the sheath is observed in the low energy range. The effect of electron impact ionization in the sheath on the origin and intensity of low-energy peaks in IED is discussed compared to ion charge-exchange collisions. Obviously, the extrapolation of the “virtual IED sensor” approach to higher pressures requires developing some other sheath models, taking into account both ion and electron collisions and probably including even a model of the whole plasma volume instead of plasma sheath one.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

LGAD-Based Silicon Sensors for 4D Detectors

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

spatial resolution↗
DOE OSTI2019

Coupled memristor devices to enable feedback control and sensing of micro/nanoelectromechanical actuator and sensors

A MEMS apparatus with dynamic displacement control includes a MEMS parallel plate capacitor integrated with one or more memristors in a series configuration wherein a displacement is observable as a function of memristance, such that an upper electrode position is capable of being interpreted in a form of a resistance rather than a capacitance. The current is limited by said MEMS parallel plate capacitor restricting a change in the resistance of the memristor(s). The memristor(s) can be employed in some embodiments a sensor element to improve a MEMS operation range.

42 ENGINEERING↗
DOE OSTI2022

Investigation of signal characteristics and charge sharing in AC-LGADs with laser and test beam measurements

AC-LGADs, also referred to as resistive silicon detectors, are a recent development of low-gain avalanche detectors (LGADs), based on a sensor design where the multiplication layer and n + contact are continuous, and only the metal layer is patterned. In AC-LGADs, the signal is capacitively coupled from the continuous, resistive n + layer over a dielectric to the metal electrodes. Therefore, the spatial resolution is not only influenced by the electrode pitch, but also the relative size of the metal electrodes. Signal propagation between the metallized areas and charge sharing between electrodes plays a larger role in these detectors than in conventional silicon sensors read out in DC mode. AC-LGADs from two manufacturers were studied in beam tests and with infrared laser scans. The impact of n + layer resistivity and metal electrode pitch on the charge sharing and achievable position resolution is shown. For strips with 100 μm pitch, a resolution of ¡ 5 μm can be reached. Additionally, the charge sharing between neighboring strips is investigated in more detail, indicating the induction of signal charge and subsequent re-sharing over the n + layer. Furthermore, an approach to identify signal sharing over large distances is presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Non-contact Current-Voltage (I-V) Tracer for Photovoltaics

This report presents a non-contact approach to simultaneously obtain current-voltage (I-V) curves of photovoltaic (PV) substrings and modules in a string without the need of disconnecting the individual modules from the string. There are two types of I-V curve tracers currently available in the marketplace, capacitor-based and electronic load-based. The primary requirement of these conventional I-V tracers is the disconnection of individual modules in the string so the individual modules contacted through the connectors of the individual modules. These contact-tracers have three major limitations in the utility scale power plants: First limitation – Weather and Accuracy: The mass-produced commercial contact-tracers cannot obtain the I-V curves of both string and its modules (as high as 30 modules), almost simultaneously (within about 5 minutes) at, practically, a single irradiance level, a single module temperature, a single spectrum and a single AOI (angle of incidence). This inability of the contact-tracers forces the testing personnel to wait for an extended or multiple sunny (>800 W/m 2 ) duration(s) of a cloudy day. This is a serious limitation as waiting for the sunny conditions or days is a huge practical challenge in almost all locations, except desert locations. Also, since the I-V curves are obtained at different prevailing weather conditions, it becomes critical to translate all the measured I-V curves of 30 modules in the string to a single test condition, for example STC (standard test conditions), so the underperforming modules can be identified. The accuracy of translation equations is heavily influenced by the irradiance level and temperature, spectral and AOI ranges; Second limitation - Safety: The second limitation is related to the high voltage electrical safety of the test personnel during disconnecting and reconnecting of individual modules or cable connectors from the string under daylight conditions and damaging of the original module connectors (especially the field aged connectors) during the disconnecting and reconnecting process; Third limitation – Labor: The third limitation is related to the enormous amount of time and hardship for the test personnel under prevailing (often harsh) protracted field conditions. This project was executed by Arizona State University in collaboration with its industry partner, PV Measurements Inc. (PVM). To mitigate all the three challenges of the state-of-the-art equipment indicated above, we utilized a non-contact I-V (NCIV) tracer approach. In this approach, we utilized an electrostatic voltmeter (ESV) and voltage sensor/probe combination to obtain I-V curves. The ESV units are extensively used in the high voltage industry but not in the PV industry. To obtain the simultaneous I-V curves of the substrings and modules within a string, we utilized multiple commercial ESV-Probe sets. In this approach, we utilized a non-contact voltage sensor (called, Probe) placed on the glass surface of the module (above the last cell of the module). This probe senses the module voltage (with respect to ground) through measured capacitance which is dictated by the surface charges (which in turn is dictated by the module voltage) and transmits the sensed voltage to the voltmeter (called, ESV or NCV, non-contact voltmeter). The current is sensed by a non-contact hall sensor. In a 30-module string, the 30th probe obtains the entire string I-V along with the string I-V obtained by the electronic load. so that the I-V curves of the substrings and modules can be obtained by NCIV without the need of disconnecting the individual modules in the string. The string I-V curves obtained by the electronic load and NCIV can be compared for the accuracy determination. One can use 30 ESV units and 30 Probes to obtain 30 I-V curves of a 30-module string or use just 5 ESV units and 30 Probes in conjunction with 5 six-channel switchboxes (called, 6:1 switchboxes). To reduce the equipment cost, we utilized the 6:1 switchbox approach so the number of ESV units is reduced from 30 to 5. The approaches, achievements and challenges of this project are detailed in this report.

14 SOLAR ENERGY↗
DOE OSTI2018

Inverse Normalization Method for Cross-Sectional Imaging and Velocimetry of Two-Phase Flows Based on Electrical Capacitance Tomography

Proper normalization of the measured capacitance data is a prerequisite in electrical capacitance tomography (ECT). Conventional methods, such as parallel and series normalization, assume a higher permittivity perturbation in a homogeneous (lower) permittivity background. Although this is applicable to a number of cases, some two-phase flows are better modeled instead as a lower permittivity perturbation in a homogeneous (higher) permittivity background. A different normalization method is proposed for such cases, which provides similar image quality as conventional, but is particularly beneficial for velocimetry applications based on sensitivity gradient of ECT sensor. Furthermore, simulation and experimental results are provided to illustrate the advantages for the proposed normalization technique.

47 OTHER INSTRUMENTATION↗