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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Vapor-Phase Stoichiometry and Heat Treatment of CdTe Starting Material for Physical Vapor Transport

Six batches of CdTe, having total amounts of material from 99 to 203 g and gross mole fraction of Te, X(sub Te), 0.499954-0.500138, were synthesized from pure Cd and Te elements. The vapor-phase stoichiometry of the assynthesized CdTe batches was determined from the partial pressure of Te2, P(sub Te2) using an optical absorption technique. The measured vapor compositions at 870 C were Te-rich for all of the batches with partial pressure ratios of Cd to Te2, P(sub Cd)/P(sub Te2), ranging from 0.00742 to 1.92. After the heat treatment of baking under dynamic vacuum at 870 C for 8 min, the vapor-phase compositions moved toward that of the congruent sublimation, i.e. P(sub Cd)/P(sub Te2) = 2.0, with the measured P(sub Cd)/P(sub Te2) varying from 1.84 to 3.47. The partial pressure measurements on one of the heat-treated samples also showed that the sample remained close to the congruent sublimation condition over the temperature range 800-880 C.

Su, Ching-Hua↗
NASA NTRS2004

Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC)

In the case of unsealed melt growth of an array of II-VI compounds, namely, CdTe, CdZnTe and ZnSe, there is a tremendous amount of experimental data describing the correlations between melt conditions and crystal quality. The results imply that the crystallinity quality can be improved if the melt was markedly superheated or long-time held before growth. It is speculated that after high superheating the associated complex dissociate and the spontaneous nucleation is retarded. In this study, crystals of CdTe were grown from melts which have undergone different thermal history by the unseeded gradient freeze method using the Universal Multizone Crystallizator (UMC). The effects of melt conditions on the quality of grown crystal were studied by various characterization techniques, including Synchrotron White Beam X-ray Topography (SWSXT), infrared microscopy, chemical analysis by glow discharge mass spectroscopy (GDMS), electrical conductivity and Hall measurements.

Su, Ching-Hua↗
NASA NTRS2015

CdTe Focal Plane Detector for Hard X-Ray Focusing Optics

The demand for higher resolution x-ray optics (a few arcseconds or better) in the areas of astrophysics and solar science has, in turn, driven the development of complementary detectors. These detectors should have fine pixels, necessary to appropriately oversample the optics at a given focal length, and an energy response also matched to that of the optics. Rutherford Appleton Laboratory have developed a 3-side buttable, 20 millimeter x 20 millimeter CdTe-based detector with 250 micrometer square pixels (80 x 80 pixels) which achieves 1 kiloelectronvolt FWHM (Full-Width Half-Maximum) @ 60 kiloelectronvolts and gives full spectroscopy between 5 kiloelectronvolts and 200 kiloelectronvolts. An added advantage of these detectors is that they have a full-frame readout rate of 10 kilohertz. Working with NASA Goddard Space Flight Center and Marshall Space Flight Center, 4 of these 1 millimeter-thick CdTe detectors are tiled into a 2 x 2 array for use at the focal plane of a balloon-borne hard-x-ray telescope, and a similar configuration could be suitable for astrophysics and solar space-based missions. This effort encompasses the fabrication and testing of flight-suitable front-end electronics and calibration of the assembled detector arrays. We explain the operation of the pixelated ASIC readout and measurements, front-end electronics development, preliminary X-ray imaging and spectral performance, and plans for full calibration of the detector assemblies. Work done in conjunction with the NASA Centers is funded through the NASA Science Mission Directorate Astrophysics Research and Analysis Program.

X-ray↗
NASA NTRS2016

The HEXITEC Hard X-Ray Pixelated CdTe Imager for Fast Solar Observations

There is an increasing demand in solar and astrophysics for high resolution X-ray spectroscopic imaging. Such observations would present ground breaking opportunities to study the poorly understood high energy processes in our solar system and beyond, such as solar flares, X-ray binaries, and active galactic nuclei. However, such observations require a new breed of solid state detectors sensitive to high energy X-rays with fine independent pixels to sub-sample the point spread function (PSF) of the X-ray optics. For solar observations in particular, they must also be capable of handling very high count rates as photon fluxes from solar flares often cause pile up and saturation in present generation detectors. The Rutherford Appleton Laboratory (RAL) has recently developed a new cadmium telluride (CdTe) detector system, called HEXITEC (High Energy X-ray Imaging Technology). It is an 80 x 80 array of 250 micron independent pixels sensitive in the 2-200 keV band and capable of a high full frame read out rate of 10 kHz. HEXITEC provides the smallest independently read out CdTe pixels currently available, and are well matched to the few arcsecond PSF produced by current and next generation hard X-ray focusing optics. NASA's Goddard and Marshall Space Flight Centers are collaborating with RAL to develop these detectors for use on future space borne hard X-ray focusing telescopes. We show the latest results on HEXITEC's imaging capability, energy resolution, high read out rate, and reveal it to be ideal for such future instruments.

Baumgartner, Wayne H.↗
DOE OSTI2024

Carrier Dynamics and Photoluminescence in Antimony-Doped CdTe and CdSeTe

Arsenic (As)-doped graded Cd(Se,Te) photovoltaics have achieved record efficiency of 22.4%, but further increases in efficiency have been limited by doping activation of only ~1% and radiative voltage losses of ~100 meV. Antimony (Sb) can also act as a p-type dopant of Cd(Se,Te) but has received relatively little attention. We measured carrier dynamics and photoluminescence of Sb-doped CdTe and CdSeTe films grown by vapor-transport deposition, with dopant activation up to ~20% Time resolved terahertz (TRTS) and photoluminescence (TRPL) data were fit by simulating the semiconductor equations, revealing bulk lifetimes of >20 ns in CdTe:Sb and >65 ns in CdSeTe:Sb and surface recombination velocities <1000 cm/s at alumina interfaces. We also qualitatively compare transients and PL spectra of doped and undoped films, with no apparent variation associated with hole concentrations up to 1015 cm-3. Preliminary variable temperature steady state photoluminescence (VT-SSPL) indicates dominant band-gap emission in CdSeTe:Sb and no evidence of potential fluctuations with Sb-doping up to this hole concentration.

14 SOLAR ENERGY↗
DOE OSTI2025

Understanding the Effects of Inhomogeneities at the Back Interface of CdTe‐Based Solar Cells Using 2D Modeling

One-dimensional modeling cannot capture lateral inhomogeneities in CdTe-based devices. Here, we use 2D modeling to investigate the role of varying energetics at the back interface. We consider improvements in the back interface layer (BIL) through either reducing back surface recombination velocity (BSRV) or decreasing the downward band bending near the back interface. We show that when the BSRV is reduced, but strong downward band bending remains, there is no change in the device performance until the BSRV of 90% of the back interface is improved by the BIL. On the other hand, any coverage with a BIL that improves band bending results in device improvements. We use band bending, back interface recombination current densities, and voltage dependent current flow through the device to understand these improvements. The modeling shows that lateral flow of carriers greatly affects device performance, which is not captured in parallel diode modeling, and demonstrates improved understanding with 2D modeling.

2D modelling↗
DOE OSTI2021

CdTe‐Based Solar Cells with Variations in Mg Concentration in the MgZnO Emitter

The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.

14 SOLAR ENERGY↗
DOE OSTI2022

Bifacial CdTe Solar Cells with Copper Chromium Oxide Back-Buffer Layer

Bifacial solar cells have the potential to maintain energy output higher than monofacial devices under unfavorable weather conditions. A transparent back-buffer layer which can passivate the interface and improve the minority carrier lifetime is critical in CdTe-based bifacial devices. Herein, solution-processed Cu x Cr y O z as a promising back-buffer for CdTe/CdS solar cells is demonstrated. The carrier lifetimes measured at the front and back of the device are 31.2 and 3.1 ns, respectively, which correspond to an increase of ≈38% and 138%, respectively, compared to the reference device. This dramatic improvement in lifetime results in a 100% increase in short-circuit current measured with backside illumination. The best bifacial device has efficiencies 7.6% and 12.5%, respectively, from back and front illumination, yielding a bifaciality factor of 0.60.

14 SOLAR ENERGY↗
DOE OSTI2022

Electrical Potential Investigation of Reversible Metastability and Irreversible Degradation of CdTe Solar Cells

In this paper, we report on the stability of CdTe devices with a structure of TCO/MZO/CdSeTe/CdTe/back-contact. The device showed reversible transitions between the light-soak state (LSS) with the best device efficiency and the dark-soak state (DSS) with an inferior efficiency. However, it showed an irreversible degradation state (DgS) driven by long-hour light soaking at an elevated temperature. We have investigated transitions between these three states from the perspective of the electric field by nm-resolution potential imaging across the devices using Kelvin probe force microscopy (KPFM). The results exhibit different anomalous electric field profiles. At the LSS, the electric field exhibits a main peak inside the CdSeTe layer instead of the MZO/CdSeTe heterointerface, illustrating a buried homojunction (BHJ) of the device. At the DSS, a large electric field peak at the MZO/CdSeTe interface was measured, which probably resulted in the inferior fill factor at the DSS. At the DgS, the electric field peak at the MZO/CdSeTe interface increased further and a third electric field was measured at the back contact of the device. Device modeling using COMSOL software, in alignment with both the electric field and device current-voltage curves, elucidates that a low n-doped CdSeTe in the region near the MZO/CdSeTe interface caused the BHJ in the LSS and a loss of MZO doping and/or increase of the conduction band offset spike due to long-term stress caused the increased electric field near the MZO/CdSeTe interface at the DgS.

CdTe solar cell↗
DOE OSTI2025

Defect levels and self-compensation in iodine-doped CdTe single crystals

This study systematically documents defect levels in n-type iodine-doped cadmium telluride (CdTe:I) crystals as measured by thermoelectric effect spectroscopy, Hall-effect measurements, and photoluminescence and calculated by density functional theory. The primary donor, I Te , was identified with an activation energy of ∼0.05 eV (measured)/∼0.13 eV (calculated). Deep acceptor states, V Cd and I Te –V Cd complex, exhibited activation energies of ∼0.1 eV (measured)/∼0.19 eV (calculated) and ∼0.12 eV (measured)/∼0.24 eV (calculated), respectively. Self-compensation and Fermi level pinning were observed at ∼0.7 eV (measured)/∼1.08 eV (calculated), contributing to high resistivity in as-grown samples. Post-growth Cd annealing effectively removes compensation centers, releases iodine donors, and significantly reduces resistivity, resulting in an ideal n-type solar cell material.

Cd annealing↗
DOE OSTI2020

Oxidative Segregation of Group V Dopants in CdTe Solar Cells

Transparent conductive oxides are used in many technologies and it is important to understand their interfacial chemical reactions. Here, we use recently developed thermomechanical cleaving and X-ray photoelectron spectroscopy to probe oxidation states at the SnO 2 interface of CdTe solar cells. We show that tin oxide promotes the formation of nanometer-scale oxides of tellurium and sulfur, largely during CdCl 2 /O 2 activation. Surprisingly, in copper-doped devices, relatively low temperature anneals (180-260 degrees C) to diffuse and activate copper acceptors also cause significant oxidation changes at the front interface, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. For Group V-doped devices, this same oxidation process causes segregation of the dopants to the SnO 2 interface in their oxidized states, implying that adjacent regions in the absorber have been depleted of dopants. Intriguingly, we demonstrate that because of their layered, van der Walls-bonded crystal structure, spatially segregated Group V oxides may represent a mechanically weak layer in a finished device.

14 SOLAR ENERGY↗
DOE OSTI2021

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

CdTe↗
DOE OSTI2020

Materials Data on CdTe by Materials Project

CdTe is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmm2 space group. The structure is three-dimensional. Cd2+ is bonded in a linear geometry to two equivalent Te2- atoms. Both Cd–Te bond lengths are 3.19 Å. Te2- is bonded to two equivalent Cd2+ and four equivalent Te2- atoms to form a mixture of edge and corner-sharing TeCd2Te4 octahedra. The corner-sharing octahedra tilt angles range from 0–1°. There are two shorter (3.09 Å) and two longer (3.10 Å) Te–Te bond lengths.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CdTe by Materials Project

CdTe is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Te2- atoms to form corner-sharing CdTe4 tetrahedra. There are three shorter (2.87 Å) and one longer (2.88 Å) Cd–Te bond lengths. Te2- is bonded to four equivalent Cd2+ atoms to form corner-sharing TeCd4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CdTe by Materials Project

CdTe crystallizes in the trigonal P3_121 space group. The structure is three-dimensional. Cd2+ is bonded in a distorted rectangular see-saw-like geometry to four equivalent Te2- atoms. There are two shorter (2.89 Å) and two longer (2.91 Å) Cd–Te bond lengths. Te2- is bonded in a distorted rectangular see-saw-like geometry to four equivalent Cd2+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CdTe by Materials Project

CdTe is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Cd2+ is bonded to six equivalent Te2- atoms to form a mixture of edge and corner-sharing CdTe6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Cd–Te bond lengths are 3.07 Å. Te2- is bonded to six equivalent Cd2+ atoms to form a mixture of edge and corner-sharing TeCd6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CdTe by Materials Project

CdTe is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Te2- atoms to form corner-sharing CdTe4 tetrahedra. All Cd–Te bond lengths are 2.87 Å. Te2- is bonded to four equivalent Cd2+ atoms to form corner-sharing TeCd4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on CdTe by Materials Project

CdTe is Wurtzite structured and crystallizes in the orthorhombic Cmc2_1 space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Te2- atoms to form corner-sharing CdTe4 tetrahedra. There are one shorter (2.86 Å) and three longer (2.88 Å) Cd–Te bond lengths. Te2- is bonded to four equivalent Cd2+ atoms to form corner-sharing TeCd4 tetrahedra.

36 MATERIALS SCIENCE↗