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At least 127 records · Page 7

Dynamic crystallization experiments on chondrule melts in reduced gravity

Chondrules crystallized during the earliest formational history of the solar system; and, if crystal settling and flotation are indicators of crystallization in the presence of gravity, they formed without the influence of gravity. In fact, attempts to duplicate the crystallization history of chondrules in the laboratory have met with limited success, because of the difficulty of comparing objects formed under the influence of gravity with objects that did not. These comparisons are difficult because there are several recognized features introduced by the presence of gravity and no doubt some which are not yet recognized. As a result there are several microscale and macroscale aspects of chondrule petrology which are difficult to understand quantitatively. Most of the features relate to the settling or flotation of early formed crystals. The proposed experiments are briefly described.

Lofgren, Gary↗

Dynamic crystallization of silicate melts

Two types of furnaces with differing temperature range capabilities were used to provide variations in melt temperatures and cooling rates in a study of the effects of heterogeneous nucleation on crystallization. Materials of chondrule composition were used to further understanding of how the disequilibrium features displayed by minerals in rocks are formed. Results show that the textures of natural chondrules were duplicated. It is concluded that the melt history is dominant over cooling rate and composition in controlling texture. The importance of nuclei, which are most readily derived from preexisting crystalline material, support an origin for natural chondrules based on remelting of crystalline material. This would be compatible with a simple, uniform chondrule forming process having only slight variations in thermal histories resulting in the wide range of textures.

Russell, W. J.↗

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Ciszek, T. F.↗

Interface shape in Czochralski grown crystals - Effect of conduction and radiation

A sequential modular computational scheme has been proposed for the calculation of temperature profiles in the melt and crystal including the melt-crystal interface shape and the crystal pulling rate for a fixed crystal radius. The heat transfer in the melt is assumed to occur by conduction only. The shape of melt-gas meniscus, described by Laplace-Young equation, is incorporated in the model and its effects on interface shape and pulling rate are examined. Further, the model incorporates the detailed radiation interaction among the various surfaces in the puller using the Gebhart enclosure theory which accounts for both direct and reflected radiation. The effects of various process parameters on the interface shape and the pulling rate have been investigated. The results of this study indicate that the shape of the melt-gas meniscus has a significant effect on the pulling rate and the interface shape in conformity with earlier studies. Further, it is shown that a simple radiation model (Stefan's model) is inadequate to model the radiation heat exchange in the Czochralski puller apparatus and the detailed Gebhart analysis is necessary for accurate calculation of both the temperature profile in the crystal as well as the interface shape.

Srivastava, R. K.↗

Mathematical model for the Bridgman-Stockbarger crystal growing system

In a major technical breakthrough, a computer model for Bridgman-Stockbarger crystal growth was developed. The model includes melt convection, solute effects, thermal conduction in the ampule, melt, and crystal, and the determination of the curved moving crystal-melt interface. The key to the numerical method is the use of a nonuniform computational mesh which moves with the interface, so that the interface is a mesh surface. In addition, implicit methods are used for advection and diffusion of heat, concentration, and vorticity, for interface movement, and for internal gracity waves. This allows large time-steps without loss of stability or accuracy. Numerical results are presented for the interface shape, temperature distribution, and concentration distribution, in steady-state crystl growth. Solutions are presented for two test cases using water, with two different salts in solution. The two diffusivities differ by a factor of ten, and the concentrations differ by a factor of twenty.

Roberts, G. O.↗

Growth Angle - a Microscopic View

The growth angle that is formed between the side of the growing crystal and the melt meniscus is an important parameter in the detached Bridgman crystal growth method, where it determines the extent of the crystal-crucible wall gap, and in the Czochralski and float zone methods, where it influences the size and stability of the crystals. The growth angle is a non-equilibrium parameter, defined for the crystal growth process only. For a melt-crystal interface translating towards the crystal (melting), there is no specific angle defined between the melt and the sidewall of the solid. In this case, the corner at the triple line becomes rounded, and the angle between the sidewall and the incipience of meniscus can take a number of values, depending on the position of the triple line. In this work, a microscopic model is developed in which the fluid interacts with the solid surface through long range van der Waals or Casimir dispersive forces. This growth angle model is applied to Si and Ge and compared with the macroscopic approach of Herring. In the limit of a rounded corner with a large radius of curvature, the wetting of the melt on the crystal is defined by the contact angle. The proposed microscopic approach addresses the interesting issue of the transition from a contact angle to a growth angle as the radius of curvature decreases.

Mazurak, K.↗

Growth of GaAs crystals from the melt in a partially confined configuration

The experimental approach was directed along two main goals: (1) the implementation of an approach to melt growth in a partially confined configuration; and (2) the investigation of point defect interaction and electronic characteristics as related to thermal treatment following solidification and stoichiometry. Significant progress was made along both fronts. Crystal growth of GaAs in triangular ampuls was already carried out successfully and consistent with the model. In fact, pronounced surface tension phenomena which cannot be observed in ordinary confinement system were identified and should premit the assessment of Maragoni effects prior to space processing. Regarding thermal treatment, it was discovered that the rate of cooling from elevated temperatures is primarily responsible for a whole class of defect interactions affecting the electronic characteristics of GaAs and that stoichiometry plays a critical role in the quality of GaAs.

Gatos, Harry C.↗

Petrogenesis of Apollo 12 mare basalts. Part 1: Multiple melts and fractional crystallization to explain olivine and ilmenite basalt compositions

Mare basalts returned by the Apollo 12 mission have been divided into 4 groups on the basis of mineralogy and whole-rock chemistry: olivine basalts; pigeonite basalts; ilmenite basalts; and feldspathic basalts. James and Wright and Rhodes et al. concluded that the olivine and pigeonite groups were co-magmatic and that the within group variations are due to fractional crystallization of olivine and minor Cr-spinel, with pigeonite replacing olivine in the pigeonite basalts. Rhodes et al. concluded that the parental compositions for these suites were probably represented by the vitrophyres, and the olivine basalts are comprised essentially of cumulates and the pigeonites of evolved end-members. However, Neal et al. have demonstrated, using trace-element considerations, that the Apollo 12 olivine and pigeonite suites are not related. The ilmenite basalts were studied extensively by Dungan and Brown who noted that both cumulates and evolved fractionates were present within this group. In their modeling, Dungan and Brown used the vitrophyre compositions as parents. Neal et al. demonstrated that the feldspathic suite was probably comprised of only one member - 12038. Herein, the ilmenite and olivine basalts are demonstrated to be the products of several non-modal partial melting events of a single source followed by closed-system fractional crystallization.

Neal, Clive R.↗

A new titanium-bearing calcium aluminosilicate phase. 1: Meteoritic occurrences and formation in synthetic systems

A new titanium-bearing calcium aluminosilicate mineral has been identified in coarse-grained calcium-aluminum-rich inclusions (CAIs) from carbonaceous chondrites. The formula for this phase, which we have temporarily termed 'UNK,' is Ca3Ti(Al,Ti)2(Si,Al)3O14, and it is present in at least 8 of the 20 coarse-grained CAIs from the Allende CV3 chondrite examined as part of this project. The phase occurs in Types A and B1 inclusions as small tabular crystal oriented along two mutually perpendicular planes in melilite. UNK crystallizes from melts in dynamic crystallization experiments conducted in air from four bulk compositions modeled after Types A, B1, B2 and C inclusions. Cooling rates resulting in crystallization of UNK ranged from 0.5 to 200 C/h from maximum (initial) temperatures of 1375 to 1580 C. Only below 1190 C does UNK itself begin to crystallize. To first order, the presence or absence of UNK from individual experiments can be understood in terms of the compositions of residual melts and nucleation probabilities. Compositions of synthetic and meteoritic UNK are very similar in terms of major oxides, differing only in the small amounts of trivalent Ti(7-13% of total Ti) in meteoritic samples. UNK crystallized from the Type A analog is similar texturally to that found in CAIs, although glass, which is typically associated with synthetic UNK, is not observed in the meteoritic occurrences. A low Ti end-member of UNK ('Si-UNK') with a composition near that of Ca3Al2Si4O14 was produced in a few samples from the Type B1 analog. This phase has not been found in the meteoritic inclusions.

Paque, Julie M.↗

A New Titanium-Bearing Calcium Aluminosilicate Phase: Meteoritic Occurrences and Formation in Synthetic Systems - 1

A new titanium-bearing calcium aluminosilicate mineral has been identified in coarse-grained calcium-aluminum-rich inclusions (CAIs) from carbonaceous chondrites. The formula for this phase, which we have temporarily termed "UNK," is Ca3Ti(AlTi)2(Si,Al)3O14, and it is present in at least 8 of the 20 coarse-grained CAIs from the Allende CV3 chondrite examined as part of this project. The phase occurs in Types A and B1 inclusions as small tabular crystals oriented along two mutually perpendicular planes in melilite. UNK crystallizes from melts in dynamic crystallization experiments conducted in air from four bulk compositions modeled after Types A, B1, B2 and C inclusions. Cooling rates resulting in crystallization of UNK ranged from 0.5 to 200 C/h from maximum (initial) temperatures of 1375 to 1580 C. Only below 1190 C does UNK itself begin to crystallize. To first order, the presence or absence of UNK from individual experiments can be understood in terms of the compositions of residual melts and nucleation probabilities. Compositions of synthetic and meteoritic LINK are very similar in terms of major oxides, differing only in the small amounts of trivalent Ti (7-13% of total Ti) in meteoritic samples. UNK crystallized from the Type A analog is similar texturally to that found in CAls, although glass, which is typically associated with synthetic UN& is not observed in meteoritic occurrences. A low Ti end-member of UNK ("Si-UNK") with a composition new that of Ca3Al2Si4O14 was produced in a few samples from the Type B1 analog. This phase has not been found in the meteoritic inclusions.

Paque, Julie M.↗

Constraining the Temperature of Impact Melt from the Mistastin Lake Impact Structure Using Zircon Crystal Structures

Impact melt is a product of hyper-velocity impact events formed by the instantaneous melting of near-surface target rocks. Constraining the temperature of impact melt is vital to understanding its prograde heating and cooling history, which can have implications for inferring the environment of early Earth ~4.0 billion years ago when microbial life potentially arose. To date, only one datum on the initial impact melt temperature has been derived by Timms et al. These authors studied zirconia microstructures and crystallographic orientations that revealed the former presence of cubic zirconia, found in a black impact glass at the Mistastin Lake impact structure, Canada. The presence of cubic zirconia indicates a minimum temperature for the impact melt of >2370°C from the dissociation temperature of zircon to cubic zirconia and liquid SiO2. With only one temperature datum, it is still difficult to constrain the entire temperature range experienced during the impact melting process; from its instantaneous formation to thermal equilibrium with the “cold” clasts collected along the crater floor and walls. In addition, obtaining a temperature value from only one type of impactite limits the inferred temperature range, because each impactite experiences a different cooling history. In this study, we present a preliminary investigation of 61 zircon crystals, 14 of which are similar to those studied by Timms et al., from the Mistastin Lake impact structure. To acquire a more accurate temperature profile representative of impact melt, zircon crystals were collected from different types of impactites containing impact melt, including additional samples of the black impact glass studied by Timms et al.

Tolometti, G. D.↗

Shuttle Mission STS-50: Orbital Processing of High-Quality CdTe Compound Semiconductors Experiment: Final Flight Sample Characterization Report

The Orbital Processing of High-Quality Doped and Alloyed CdTe Compound Semiconductors program was initiated to investigate, quantitatively, the influences of gravitationally dependent phenomena on the growth and quality of bulk compound semiconductors. The objective was to improve crystal quality (both structural and compositional) and to better understand and control the variables within the crystal growth production process. The empirical effort entailed the development of a terrestrial (one-g) experiment baseline for quantitative comparison with microgravity (mu-g) results. This effort was supported by the development of high-fidelity process models of heat transfer, fluid flow and solute redistribution, and thermo-mechanical stress occurring in the furnace, safety cartridge, ampoule, and crystal throughout the melting, seeding, crystal growth, and post-solidification processing. In addition, the sensitivity of the orbital experiments was analyzed with respect to the residual microgravity (mu-g) environment, both steady state and g-jitter. CdZnTe crystals were grown in one-g and in mu-g. Crystals processed terrestrially were grown at the NASA Ground Control Experiments Laboratory (GCEL) and at Grumman Aerospace Corporation (now Northrop Grumman Corporation). Two mu-g crystals were grown in the Crystal Growth Furnace (CGF) during the First United States Microgravity Laboratory Mission (USML-1), STS-50, June 24 - July 9, 1992.

Larson, David J.↗

Origin of SiC impurities in silicon crystals grown from the melt in vacuums

A main source of high carbon levels in silicon crystals grown from melt under reduced pressures and contained in silica crucibles supported by graphite retainer/susceptor was identified by thermodynamic analysis. The calculations were verified by experimental results and the carbon level is reduced by approximately 50% with the use of molybdenum retainers.

Schmid, F.↗

Interface shapes during vertical Bridgman growth of (Pb, Sn)Te crystals

Melt-solid interfaces obtained during vertical Bridgman growth of (Pb, Sn)Te crystals were investigated with a quenching technique. The shapes of these interfaces, revealed by etching longitudinally cut sections, were correlated with the composition variations determined by EMPA. These experiments demonstrated that the interface shape can be changed from concave to convex by moving its location from the edge of the cold zone into the hot zone. The metallography and microsegregation near the melt-solid interface were analyzed in detail. A sharp change in composition above the interface indicated the existence of a diffusion boundary layer 40-90 microns thick. This small diffusion boundary layer is consistent with strong convective mixing in the (Pb, Sn)Te melt.

Huang, YU↗

Superconducting Bi1.5Pb0.5Sr2Ca2Cu3O(x) ceramics by rapid melt quenching and glass crystallization

A glass of nominal Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) composition, prepared by rapid quenching of the melt, showed a glass transition temperature of 383 C, crystallization temperature of 446 C, melting temperature of 855 C, and bulk density of 5.69 g/cu cm in air. The activation energy for crystallization of the glass was estimated to be 292kJ/mol from non-isothermal DSC. On heating in oxygen, the glass showed a slow and continuous weight gain starting at approximately 530 C which reached a plateau at approximately 820 C. The weight gained during heating was retained on cooling to ambient conditions indicating an irreversible oxidation step. The influence of annealing conditions on the formation of various phases in the glass has been investigated. The Bi(2)Sr(2)Ca(0)Cu(1)O(6) phase crystallized out first followed by formation of other phases at higher temperatures. The high-T(sub c) phase, isostructural with Bi(2)Sr(2)Ca(2)Cu(3)O(10) was not detected below 840 C, but its fraction increased with the annealing time at 840 C. A sample annealed at 840 C for 243h in air and furnace cooled showed the highest T(sub c)(R=0) of 107.2K and a narrow transition width, delta T(sub c)(10 to 90 percent), of approximately 2 K. The high T(sub c) phase does not seem to crystallize out directly from the glass but is rather produced at high temperature by reaction between the phases formed at lower temperatures. The kinetics of 110K phase formation was sluggish. It appears that the presence of lead helps in the formation and/or stabilization of the 110 K phase.

Bansal, Narottam P.↗

Homogeneous crystal nucleation in binary metallic melts

A method for calculating the homogeneous crystal nucleation frequency in binary metallic melts is developed. The free energy of crystallization is derived from regular solution models for the liquid and solid and is used, together with model-based estimates of the interfacial tension, to calculate the nucleation frequency from the classical theory. The method can account for the composition dependence of the maximum undercooling observed in a number of experiments on small droplet dispersions. It can also be used to calculate the driving force for crystal growth and to obtain more precise estimates of the homogeneous crystal nucleation frequency in glass-forming alloys. This method, although approximate, is simple to apply, and requires only knowledge of the phase diagram and a few readily available thermodynamic quantities as input data.

Thompson, C. V.↗

Quantitative determination of zero-gravity effects on crystal growth from the melt (experiment MA-060)

The purpose of experiment MA-060 was to investigate quantitatively the effects of near-zero gravity conditions on crystal growth and dopant segregation during directional solidification from the melt. Gallium-doped germanium single crystals were successfully grown from the melt with simultaneous interface demarcation during the Apollo Soyuz Test Project mission. The analysis of the experimental data indicates striking differences of dopant segregation and growth behavior in the presence and absence of gravity. The results obtained are believed to have far-reaching implications on materials processing under zero-gravity conditions and on the theory of crystal growth and segregation in general.

Gatos, H. C.↗

Cavity Pull Rod: Device to Promote Single Crystal Growth from the Melt

A pull rod for use in producing a single crystal from a molten alloy is provided that includes an elongated rod having a first end and a second end, a first cavity defined at the first end and a second cavity defined at the first end and in communication with the first cavity. The first cavity receives the molten alloy and the second cavity vents a gas from the molten alloy to thereby template a single crystal when the pull rod is dipped into and extracted from the molten alloy.

Goldsby, Jon↗