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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Increased Accuracy in the Measurement of the Dielectric Constant of Seawater at 1.413 GHz

This paper describes the latest results for the measurements of the dielectric constant at 1.413 GHz by using a resonant cavity technique. The purpose of these measurements is to develop an accurate relationship for the dependence of the dielectric constant of sea water on temperature and salinity which is needed by the Aquarius inversion algorithm to retrieve salinity. Aquarius is the major instrument on the Aquarius/SAC-D observatory, a NASA/CONAE satellite mission launched in June of20ll with the primary mission of measuring global sea surface salinity to an accuracy of 0.2 psu. Aquarius measures salinity with a 1.413 GHz radiometer and uses a scatterometer to compensate for the effects of surface roughness. The core part of the seawater dielectric constant measurement system is a brass microwave cavity that is resonant at 1.413 GHz. The seawater is introduced into the cavity through a capillary glass tube having an inner diameter of 0.1 mm. The change of resonance frequency and the cavity Q value are used to determine the real and imaginary parts of the dielectric constant of seawater introduced into the thin tube. Measurements are automated with the help of software developed at the George Washington University. In this talk, new results from measurements made since September 2010 will be presented for salinities 30, 35 and 38 psu with a temperature range of O C to 350 C in intervals of 5 C. These measurements are more accurate than earlier measurements made in 2008 because of a new method for measuring the calibration constant using methanol. In addition, the variance of repeated seawater measurements has been reduced by letting the system stabilize overnight between temperature changes. The new results are compared to the Kline Swift and Meissner Wentz model functions. The importance of an accurate model function will be illustrated by using these model functions to invert the Aquarius brightness temperature to get the salinity values. The salinity values will be compared to co-located in situ data collected by Argo buoys.

Zhou, Y.↗
NASA NTRS2012

New Dielectric Measurement Data to Determine the Permittivity of Seawater at 1.4313 Hz

This paper describes the new measurements - made in 2010-2011 - of the dielectric constant of seawater at 1.413 GHz using a resonant cavity technique. The purpose of these measurements is to develop an accurate relationship concerning the dependence of the dielectric constant of seawater on temperature and salinity for use by the Aquarius inversion algorithm. Aquarius is a NASA/CONAE satellite mission launched in June of 2011 with the primary mission of measuring global sea surface salinity with a 1.413 GHz radiometer to an accuracy of 0.2 psu. A brass microwave cavity resonant at 1.413 GHz has been used to measure the dielectric constant of seawater. The seawater is introduced into the cavity through a capillary glass tube having an inner diameter of 0.1 mm. The change of resonant frequency and the cavity Q value are used to determine the real and imaginary parts of the dielectric constant of seawater. Measurements are automated with Visual Basic software developed at the George Washington University. In this paper, new results from measurements made since September 2010 will be presented for salinities of 30, 35 and 38 psu with a temperature range of 0 C to 35 C in intervals of 5 C. These measurements are more accurate than earlier measurements made in 2008. The new results will be compared to the Klein-Swift (KS) and Meissner-Wentz (MW) model functions. The importance of an accurate model function will be illustrated by using these model functions to invert the Aquarius brightness temperature to retrieve the salinity values. The salinity values will be compared to co-located in situ data collected by Argo buoys.

Lang, R.↗
NASA NTRS2014

Negative Dielectric Constant Material Based on Ion Conducting Materials

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly(benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Gordon, Keith L.↗
NASA NTRS2016

Accurate Measurements of the Dielectric Constant of Seawater at L Band

This paper describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz, the center of the protected band (i.e., passive use only) used in the measurement of sea surface salinity from space. The objective of the measurements is to accurately determine the complex dielectric constant of seawater as a function of salinity and temperature. A resonant cylindrical microwave cavity in transmission mode has been employed to make the measurements. The measurements are made using standard seawater at salinities of 30, 33, 35, and 38 practical salinity units over a range of temperatures from 0 degree C to 35 degree C in 5 degree C intervals. Repeated measurements have been made at each temperature and salinity. Mean values and standard deviations are then computed. The total error budget indicates that the real and imaginary parts of the dielectric constant have a combined standard uncertainty of about 0.3 over the range of salinities and temperatures considered. The measurements are compared with the dielectric constants obtained from the model functions of Klein and Swift and those of Meissner and Wentz. The biggest differences occur at low and high temperatures.

Measurements↗
NASA NTRS2016

Submillimeter and Far-Infrared Dielectric Properties of Thin Films

The complex dielectric function enables the study of a material's refractive and absorptive properties and provides information on a material's potential for practical application. Commonly employed line shape profile functions from the literature are briefly surveyed and their suitability for representation of dielectric material properties are discussed. An analysis approach to derive a material's complex dielectric function from observed transmittance spectra in the far-infrared and submillimeter regimes is presented. The underlying model employed satisfies the requirements set by the Kramers-Kronig relations. The dielectric function parameters derived from this approach typically reproduce the observed transmittance spectra with an accuracy of less than 4%.

Cataldo, Giuseppe↗
NASA NTRS2017

Negative Dielectric Constant Material Based on Ion Conducting Materials

Metamaterials or artificial negative index materials (NIMs) have generated great attention due to their unique and exotic electromagnetic properties. One exemplary negative dielectric constant material, which is an essential key for creating the NIMs, was developed by doping ions into a polymer, a protonated poly (benzimidazole) (PBI). The doped PBI showed a negative dielectric constant at megahertz (MHz) frequencies due to its reduced plasma frequency and an induction effect. The magnitude of the negative dielectric constant and the resonance frequency were tunable by doping concentration. The highly doped PBI showed larger absolute magnitude of negative dielectric constant at just above its resonance frequency than the less doped PBI.

Gordon, Keith L.↗
NASA NTRS2017

Packaging Technology for Dielectric-Coating-Less Heavy Ion Radiation Testing of High-Voltage (HV) Electronic Parts

Testing high voltage (HV) electronic parts (greater than 300 V) for sudden event effects (SEE) caused by cosmic rays in the space environment, consisting of energetic heavy-ions, and neutron radiation in the upper atmosphere is a crucial step towards using these parts in spacecraft and aircraft. Due to the nature of cosmic radiation and neutrons, electronic parts are tested for SEE without any packaging and/or shielding over the top of the device. In the case of commercial HV parts, the top of the packaging is etched off and then a thin dielectric coating is placed over the part in order to avoid electrical arcing between the device surface and wire bonds and other components. Even though the effects of the thin dielectric layer on SEE testing can be accounted for, the dielectric layer significantly hinders post testing failure analysis. Replicating the test capability of state-of-the-art packaging while eliminating the need for post radiation test processing of the die surface (that obscures failure analysis) is the goal. To that end, a new packaging concept for HV parts has been developed that requires no dielectric coating over the part. Testing of prototype packages used with Schottky diodes (rated at 1200V) has shown no electrical arcing during testing and leakage currents during reverse bias testing are within the manufactures specifications.

High Voltage↗
NASA NTRS2016

A FDTD Solution of Scattering of Laser Beam with Orbital Angular Momentum by Dielectric Particles: Far-Field Characteristics

Electromagnetic (EM) beams with orbital angular momentum (OAM) may have great potential applications in communication technology and in remote sensing of the Earth-atmosphere system and outer planets. Study of their interaction with optical lenses and dielectric or metallic objects, or scattering of them by particles in the Earth-atmosphere system, is a necessary step to explore the advantage of the OAM EM beams. In this study, the 3-dimensional (3D) scattered-field (SF) finite-difference time domain (FDTD) technique with the convolutional perfectly matched layer (CPML) absorbing boundary conditions (ABC) is applied to calculate the scattering of the purely azimuthal (the radial mode number is assumed to be zero) Laguerre–Gaussian (LG) beams with the OAM by dielectric particles. We found that for OAM beam׳s interaction with dielectric particles, the forward-scattering peak in the conventional phase function (P11) disappears, and light scattering peak occurs at a scattering angle of ~15° to 45°. The disappearance of forward-scattering peak means that, in laser communications most of the particle-scattered noise cannot enter the receiver, thus the received light is optimally the original OAM-encoded signal. This feature of the OAM beam also implies that in lidar remote sensing of the atmospheric particulates, most of the multiple-scattering energy will be off lidar sensors, and this may result in an accurate profiling of particle layers in the atmosphere or in the oceans by lidar, or even in the ground when a ground penetration radar (GPR) with the OAM is applied. This far-field characteristics of the scattered OAM light also imply that the optical theorem, which is derived from plane-parallel wave scattering case and relates the forward scattering amplitude to the total cross section of the scatterer, is invalid for the scattering of OAM beams by dielectric particles.

Electromagnetic beams↗
NASA NTRS2019

Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

While NASA Glenn Research Center's "Generation 10" 4H-SiC Junction Field Effect Transistor (JFET) integrated circuits (ICs) have uniquely demonstrated 500 °C electrical operation for durations of over a year, this experimental work has also revealed that physical cracking of chip dielectric passivation layers ultimately limits extreme-environment operating lifetime [1-3]. The prevention of such dielectric passivation cracks should therefore improve IC high temperature durability and yield, leading to more beneficial technology adoption into aerospace, automotive, and energy systems. This report describes Generation 10.2, 11.1, and 11.2 die tested under unbiased and unpackaged accelerated age testing at 500 °C, 600 °C, 720 °C, and 800 °C in air-atmosphere ovens for 100- and 200-hour duration. Additional samples were separately subjected to 10 thermal cycles between the same high temperatures (with 10-hour high-temperature soak each cycle) and 50 °C. It is shown that having two stoichiometric Si3N4 layers in the interconnect dielectric stack substantially decreases the amount of dielectric cracking observed following these oven tests.

Spry, D. J.↗
NASA NTRS2020

SCoBi Multilayer: A Signals of Opportunity Reflectometry Model for Multilayer Dielectric Reflections

A multilayer module is incorporated into the Signals of Opportunity (SoOp) Coherent Bistatic Scattering model (SCoBi) for determining the reflections and propagation of electric fields within a series of multilayer dielectric slabs. This module can be used in conjunction with other SCoBi components to simulate complex, bistatic simulation schemes that include features such as surface roughness, vegetation, antenna effects, and multilayer soil moisture interactions on reflected signals. This paper introduces the physics underlying the multilayer module and utilizes it to perform a simulation study of the response of SoOp-R measurements with respect to subsurface soil moisture parameters. For a frequency range of 100–2400 MHz, it is seen that the SoOp-R response to a single dielectric slab is mostly frequency insensitive; however, the SoOp-R response to multilayer dielectric slabs will vary between frequencies. The relationship between SoOp-R reflectivity and the contributing depth is visualized, and the results show that SoOp-R measurements can display sensitivity to soil moisture below the penetration depth. By simulation of simple soil moisture profiles with different wetting and drying gradients, the dielectric contrast between layers is shown to be the greatest contributing factor to subsurface soil moisture sensitivity. Overall, it is observed that different frequencies can sense different areas of a soil moisture profile, and this behavior can enable subsurface soil moisture data products from SoOp-R observations.

Dylan Boyd↗
NASA NTRS2024

Dielectric Permittivity Measurements of Geologic Samples at Venus Surface Temperatures

Synthetic-aperture radar (SAR) and radar sounding are two powerful remote sensing techniques used to examine the surface and subsurface of planets. Their value is critical in the case of Venus due to this planet’s global and visually opaque cloud layer. The recently selected VERITAS and EnVision orbital missions, slated to study the planet in the early 2030’s, employ radar instruments to image the surface (VERITAS and EnVision) and probe the subsurface (EnVision). For both techniques, the complex dielectric permittivity of the surface and subsurface materials control radar backscatter intensity and penetration depth. Since the 1970’s, many studies have characterized the dielectric permittivity of geologic materials collected both on Earth and on the Moon to constrain the radar reflectivity and transparency at a variety of radar frequencies [e.g., 1]. Two consistent findings from those studies are that complex permittivity depends on both the density (or porosity) and the composition of the material. Denser materials and more metal-rich compositions tend to have higher permittivity values and to incur greater propagation path loss. Water content also elevates permittivity of otherwise dry rocks/soils/regolith [e.g., 2]. However, permittivity is independent of frequency for the 0.5-18 GHz range, within which SAR imaging commonly lies. The one aspect poorly explored thus far is the effect of elevated temperatures on dielectric permittivity. Previous work suggests that increased lattice vibrations and flow of free electrons associated with an increase in temperature elevate both the real (reflectivity) and imaginary (path loss) parts of the complex permittivity. We are currently conducting a 3-year campaign to measure the complex dielectric permittivity of Venusrelevant geologic materials at Venus surface temperatures (380°C - 460°C) and with frequencies relevant to VERITAS, EnVision, and Magellan imaging synthetic aperture radars.

M Barmatz↗
DOE OSTI2026

Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits

Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/$γ$-Al$_2$O$_3$/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, we report the first direct measurement of the dielectric loss of epitaxial $γ$-Al$_2$O$_3$, for which we find a low intrinsic two-level system loss, $δ_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}$. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.

Garcia-Wetten, David A. [Northwestern U.]↗
DOE OSTI2024

Increased Static Charge–Induced Threshold Voltage Shifts and Memristor Activity in Pentacene OFETs Comprising Polystyrene–Based Gate Dielectrics Containing Electroactive Small Molecule Crystallites

Top-contact bottom-gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4-methylstyrene) (P4MS), or poly(4-tert-butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. The OFET characteristics of these devices are investigated and their threshold voltage shifts are measured after –70 V static charging for 5 min. Two-terminal measurements are conducted using multiple different gate biases in the range of –50 to +50 V to investigate memristor behavior in the devices. OFETs containing DBTTF exhibited ΔVth increases as large as 330% relative to control OFETs containing no DBTTF, while OFETs containing at least 7.5 wt.% DBTTF exhibited memristor activity, with currents ranging from 20 nA to 44 µA depending on the applied bias. Furthermore, this work demonstrates that including small, separated crystallites in polymer dielectrics enhances their charge storage ability and can be promising for creating nonbinary memory devices for data processing. Additionally, the observed memristor activity indicates the OFETs in this work can be used in development of neuromorphic systems that aim to mimic the synaptic behavior of the human nervous system.

25 ENERGY STORAGE↗
DOE OSTI2026

A Solid State Zwitterionic Plastic Crystal With High Static Dielectric Constant

Solid materials with a high dielectric constant have a wide range of applications in the energy storage field. In this research, an imidazolium-based zwitterion is designed, synthesized, and confirmed to have a plastic crystal phase based on the following experimental and computational evidence: (i) the presence of long-range order with weak intermolecular forces and competing attractive-repulsive interactions along different crystallographic directions; (ii) the observation of more than one endotherm on heating including a solid-solid phase transition at T s-s = −26 °C and melting of the plastic crystal at T m = 72°C; (iii) a low entropy of fusion at melting (2.1 JK −1 mol −1 ); (iv) a strongly anisotropic morphology; (v) relatively fast dynamics originating from short-range degrees of freedom. Furthermore, it exhibits a very high dielectric constant in the plastic crystal solid state (147 at −10°C and 103 at 70°C) due to the rotational degrees of freedom of plastic crystals that arise from weak net intermolecular interactions of zwitterions due to only having two carbons between the anion and cation. This material conveniently remains in the plastic crystal phase within 50 K of ambient temperature. This discovery opens new opportunities in the search for solid-state high dielectric constant materials.

dielectric relaxation↗
DOE OSTI2025

Pressure-induced cation and vacancy disorder-order transition and near-zero τ f in deficient hexagonal perovskite Ba 8 ZnTa 6 O 24 dielectrics

Pressure applications can enable the tuning of atomic/defect ordering and provide access to new functional materials. Here, in this study, we report that pressure-induced structural transformation featuring disorder-order transition of both cations and vacancies in the 8-layer deficient hexagonal perovskite tantalate dielectrics Ba 8 ZnTa 6 O 24 , which transformed the structure from twin to shift and remarkably lowered the temperature coefficient of resonant frequency τ f down to near zero (∼0.56 ppm/°C) from 38 ppm/°C for the twinned precursor. The atomic scale STEM-HAADF and EDS results confirm the ordering of Zn in the Ta host at the nanometer scale in the shifted material featuring well-ordered Ba 8 ZnTa 6 O 24 slabs intergrown with Ba 3 ZnTa 2 O 9 and Ba 5 Ta 4 O 15 monolayers and anti-phase grain boundaries as planar defects. The pressure-induced twin-shift structural transformation of Ba 8 ZnTa 6 O 24 features the rare constant concentration of the hexagonal stacked layers, which is allowed by the vacancy ordering at the central layers of face-shared octahedral (FSO) trimers avoiding the FSO B-B repulsion, and remarkably the faster cationic ordering kinetics compared with the 2:1 ordered complex perovskites. Although the inclusion of numerous planar defects and the oxidizable atomic defects led to significant p-type conduction and inhomogeneous electrical microstructures, resulting in an extraordinarily high extrinsic dielectric loss for the high-pressure shifted Ba 8 ZnTa 6 O 24 pellet, the intrinsically near-zero τ f could make the shifted Ba 8 ZnTa 6 O 24 perovskite an ideal microwave dielectric resonator candidate if the defects could be eliminated.

high pressure↗
DOE OSTI2025

Enhanced dielectric insulation of biaxially oriented high temperature polyester films for capacitive energy storage

Biaxially oriented polypropylene (BOPP) films are widely used in dielectric capacitors due to their ultralow loss, high breakdown strength, and long lifetime. However, their poor temperature tolerance limits applications in emerging high-temperature environments such as wide-band-gap power electronics in electric vehicles. Here, we report significantly enhanced dielectric insulation properties of biaxially oriented poly(ethylene 2,6-naphthalate) (BOPEN) films compared to biaxially oriented poly(ethylene terephthalate) (BOPET) films, despite their similar semicrystalline morphologies. BOPEN exhibits higher DC and AC breakdown strengths and markedly extended lifetimes at elevated temperatures. For instance, at 120 °C, the DC Weibull lifetime of BOPEN exceeded that of BOPET by over two orders of magnitude and even surpassed that of BOPP. Through comprehensive analyses—leakage current, electric displacement-electric field loops, and thermally stimulated depolarization current—we attribute this superior performance to suppressed homocharge injection and conduction losses, enabled by the rigid naphthalene-based backbone in BOPEN that reduces dipole mobility and chain polarity. These findings underscore the potential of BOPEN as a next-generation polymer dielectric for high-temperature capacitor applications.

25 ENERGY STORAGE↗
DOE OSTI2025

Pool boiling heat transfer evaluation of next-generation dielectric fluid: Opteon™ 2P50

The growing use of artificial intelligence has led to heavy thermal loads and high heat dissipation rates in data centers. Conventional air-cooled technologies are not able to fulfill these requirements. To overcome these challenges, two-phase immersion cooling (2PIC) has emerged as one of the leading technologies for high power-density chips. 2PIC increases the heat dissipation rate and efficiency of the system while reducing the footprint of the cooling equipment. A fluid with adequate dielectric properties, a suitable normal boiling temperature to maintain chip temperatures, and good material compatibility, is desired for 2PIC system. In this study, the pool boiling heat transfer of a new developmental dielectric fluid, Opteon™ 2P50, was experimentally investigated. The heat transfer coefficients at various heat fluxes (20–150 kW/m 2 ) and the critical heat flux were measured using a smooth aluminum surface. Compared with HFE-7100, Opteon™ 2P50 shows higher heat transfer coefficient (up to 59% higher) and a slightly lower value of critical heat flux (around 5.9% lower). The modified Cooper correlation with the optimized leading constant resulted in reliable prediction accuracy with a 5.3% mean absolute error percentage. Overall, these results indicate that the new dielectric fluid provides similar thermal performance to some legacy fluids.

2P50↗
DOE OSTI2024

Probing electronic and dielectric properties of ultrathin Ga 2 O 3 /Al 2 O 3 atomic layer stacks made with in vacuo atomic layer deposition

Ultrathin (1–4 nm) films of wide-bandgap semiconductors are important to many applications in microelectronics, and the film properties can be sensitively affected by defects especially at the substrate/film interface. Motivated by this, an in vacuo atomic layer deposition (ALD) was developed for the synthesis of ultrathin films of Ga 2 O 3 /Al 2 O 3 atomic layer stacks (ALSs) on Al electrodes. It is found that the Ga 2 O 3 /Al 2 O 3 ALS can form an interface with the Al electrode with negligible interfacial defects under the optimal ALD condition whether the starting atomic layer is Ga 2 O 3 or Al 2 O 3 . Such an interface is the key to achieving an optimal and tunable electronic structure and dielectric properties in Ga 2 O 3 /Al 2 O 3 ALS ultrathin films. In situ scanning tunneling spectroscopy confirms that the electronic structure of Ga 2 O 3 /Al 2 O 3 ALS can have tunable bandgaps (E g ) between ~2.0 eV for 100% Ga 2 O 3 and ~3.4 eV for 100% Al 2 O 3 . With variable ratios of Ga:Al, the measured E g exhibits significant non-linearity, agreeing with the density functional theory simulation, and tunable carrier concentration. Furthermore, the dielectric constant of ultrathin Ga 2 O 3 /Al 2 O 3 ALS capacitors is tunable through the variation in the ratio of the constituent Ga 2 O 3 and Al 2 O 3 atomic layer numbers from 9.83 for 100% Ga 2 O 3 to 8.28 for 100% Al 2 O 3 . The high ε leads to excellent effective oxide thickness ~1.7–2.1 nm for the ultrathin Ga 2 O 3 /Al 2 O 3 ALS, which is comparable to that of high-K dielectric materials.

36 MATERIALS SCIENCE↗