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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Laser-induced damage-growth threshold at 351 nm in the nanosecond regime in dielectric coatings employing different high-index materials

The laser-damage performance of HfO 2 /SiO 2 and Al 2 O 3 /SiO 2 mirrors was investigated at a laser wavelength of 351 nm with nanosecond pulse durations. A method was developed to quantify the laser-induced damage-growth threshold under conditions relevant to high-repetition-rate, large-aperture laser systems. The results suggest that the damage-growth performance cannot be inferred from the corresponding damage-initiation threshold that is commonly used to evaluate the performance of optical materials. Here, a systematic difference was also observed in the performance between these two groups of high-index materials, with the Al 2 O 3 /SiO 2 mirrors exhibiting about twofold improvement in the damage-growth threshold.

36 MATERIALS SCIENCE↗
DOE OSTI2026

To investigate the reciprocal interactions between dielectric barrier discharges and different biological targets in cell culture medium

The objective of this project was to investigate the dynamic interactions between non-thermal plasma (NTP) and biological targets suspended in a physiological liquid medium. The experiments under this collaborative study were designed to combine theoretical and experimental approaches to test the hypothesis that when living cells (and the growth medium surrounding them) encounter plasma, they reciprocally and dynamically modify each other.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2025

A Modified Model Dielectric Function for Analyzing Optical Spectra of InGaN Nanofilms on Sapphire Substrates

Due to a lower InN bandgap energy Eg~0.7 eV, InxGa1−xN/Sapphire epifilms are considered valuable in the development of low-dimensional heterostructure-based photonic devices. Adjusting the composition x and thickness d in epitaxially grown films has offered many possibilities of light emission across a wide spectral range, from ultraviolet through visible into near-infrared regions. Optical properties have played important roles in making semiconductor materials useful in electro-optic applications. Despite the efforts to grow InxGa1−xN/Sapphire samples, no x- and d-dependent optical studies exist for ultrathin films. Many researchers have used computationally intensive methods to study the electronic band structures Ejk→, and subsequently derive optical properties. By including inter-band transitions at critical points from Ejk→, we have developed a semiempirical approach to comprehend the optical characteristics of InN, GaN and InxGa1−xN. Refractive indices of InxGa1−xN and sapphire substrate are meticulously integrated into a transfer matrix method to simulate d- and x-dependent reflectivity RE and transmission TE spectra of nanostructured InxGa1−xN/Sapphire epifilms. Analyses of RE and TE have offered accurate x-dependent shifts of energy gaps for InxGa1−xN (x = 0.5, 0.7) in excellent agreement with the experimental data.

Talwar, Devki N. (ORCID:0000000202723195)↗