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Understanding the Effect of Single Atom Cationic Defect Sites in an Al 2 O 3 (012) Surface on Altering Selenate and Sulfate Adsorption: An Ab Initio Study
Adsorption is a promising under-the-sink selenate remediation technique for distributed water systems. Recently it was shown that adsorption induced water network rearrangement control adsorption energetics on the α-Al 2 O 3 (012) surface. Here, we aim to elucidate the relative importance of the water network effects and surface cation identity on controlling selenate and sulfate adsorption energy using density functional theory calculations. Density functional theory (DFT) calculations predicted the adsorption energies of selenate and sulfate on nine transition metal cations (Sc–Cu) and two alkali metal cations (Ga and In) in the α-Al 2 O 3 (012) surface under simulated acidic and neutral pH conditions. We find that the water network effects had a larger impact on the adsorption energy than the cationic identity. However, cation identity secondarily controlled adsorption. Most cations decreased the adsorption energy, weakening the overall performance, the larger Sc and In cations enabled inner-sphere adsorption in acidic conditions because they relaxed outward from the surface, providing more space for adsorption. Additionally, only Ti induced Se selectivity over S by reducing the adsorbing selenate to selenite but not reducing the sulfate. Altogether, this study indicates that tuning water network structure will likely have a larger impact than tuning cation–selenate interactions for increasing adsorbate effectiveness.
Chemisorption Can Reverse Defect–Defect Interaction on Heterogeneous Catalyst Surfaces
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Promoting H2O2 production via 2-electron oxygen reduction by coordinating partially oxidized Pd with defect carbon
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Exceptionally high electronic mobility in defect-rich Eu[subscript 2]ZnSb[subscript 2;#8722;x]Bi[subscript x] alloys
Abstract not provided
Disorder in Ho 2 Ti 2-x Zr x O 7 : pyrochlore to defect fluorite solid solution series
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Defect-free plastic deformation through dimensionality reduction and self-annihilation of topological defects in crystalline solids
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At-Speed Defect Localization by Combining Laser Scanning Microscopy and Power Spectrum Analysis.
Abstract not provided.
Large-Scale Materials Modeling at Quantum Accuracy: Ab Initio Simulations of Quasicrystals and Interacting Extended Defects in Metallic Alloys
Ab initio electronic-structure has remained dichotomous between achievable accuracy and length-scale. Quantum many-body (QMB) methods realize quantum accuracy but fail to scale. Density functional theory (DFT) scales favorably but remains far from quantum accuracy. We present a framework that breaks this dichotomy by use of three interconnected modules: (i) invDFT: a methodological advance in inverse DFT linking QMB methods to DFT; (ii) MLXC: a machine-learned density functional trained with invDFT data, commensurate with quantum accuracy; (iii) DFT-FE-MLXC: an adaptive higher-order spectral finite-element (FE) based DFT implementation that integrates MLXC with efficient solver strategies and HPC innovations in FE-specific dense linear algebra, mixed-precision algorithms, and asynchronous compute-communication. Furthermore, we demonstrate a paradigm shift in DFT that not only provides an accuracy commensurate with QMB methods in ground-state energies, but also attains an unprecedented performance of 659.7 PFLOPS (43.1% peak FP64 performance) on 619,124 electrons using 8,000 GPU nodes of Frontier supercomputer.
Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates.
Abstract not provided.
Quantum defects at the Center of Integrated Nanotechnologies: Defect formation, quantum sensing, and quantum communication
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Ultrasonic detection of the pinning of dislocations by point defects in lead. II - Model for dislocation defect interaction
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Effects of Surface Finish, of Certain Defects, and of Repair of Defects by Welding on Fatigue Strength of 355-T6 Sand-castings and Effects of Prior Fatigue Stressing on Tensile Properties
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UNDERPINNING PHYSICS OF DEFECT FORMATION IN GRAVURE PRINTING AND DEFECT PREDICTION VIA MACHINE L EARNING.
Abstract not provided.