Search NASA⌕ Search

SEARCH · Search NASA

Results for “Dislocation Lines”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Line profile analysis of dislocation densities of the δ-phase 239 Pu-2.0 at%Ga alloy using neutron diffraction

Time-of-flight neutron diffraction measurements were conducted at ambient conditions to study microstructures of the δ-phase 239 Pu-2at% Ga alloy. Based on the line profile analysis of diffraction data we derived dislocation densities using a correction routine to account for the anisotropic strain broadening. Our results show here that the average dislocation density in the as-received sample, previously treated at cryogenic temperatures, is five times higher than the dislocation density measured after annealing the sample, indicating that the neutron instrumentation used in this work has sufficient resolution to detect the dislocation density changes in different sample processing. These results are also in reasonably good agreement with the dislocation densities previously reported based on TEM observations and x-ray diffraction data, suggesting that the simple correction routines applied in this work have a fairly good fidelity for deriving important microstructural information such as dislocation density for elastically highly anisotropic δ-phase 239 Pu-Ga alloys.

36 MATERIALS SCIENCE↗

Quantifying the dislocation content of atomically resolved grain boundary line defects using the Nye tensor

The Nye tensor, which quantifies the density of Burgers vector for a given dislocation line direction, can be effectively used to characterize dislocation content in bulk crystals from atomic-resolution transmission electron microscopy images. The Nye tensor can be calculated from these images, in part because the reference state is simply defined by the lattice of the perfect crystal. The application of the Nye tensor to interfacial line defects, for which the natural reference state is the dichromatic pattern of the two grains in their reference orientation, poses additional challenges. In this work, we present a method that employs the Nye tensor to characterize the edge dislocation content of line defects at grain boundaries from atomic-resolution images. This approach enables us to rapidly characterize all edge dislocation content along a grain boundary. Additionally, the Nye tensor provides information about line defect core structure. Finally, we demonstrate this method on two exemplar defects: a twin boundary disconnection and a facet junction in face-centered cubic Au.

Crystallographic defects↗

Macroscopic and microscopic investigations on uniaxial ratchetting of two-phase Ti–6Al–4V alloy

The uniaxial ratchetting of Ti–6Al–4V alloy with two phases (i.e., primary hexagonal close packed (HCP) α and secondary body-centered cubic (BCC) β phases) was investigated by macroscopic and microscopic experiments at room temperature. Firstly, the effects of cyclic softening/hardening feature, applied mean stress and stress amplitude on the uniaxial ratchetting of the alloy were discussed. The macroscopic investigation of Ti–6Al–4V alloy presents obvious strain-amplitude-dependent cyclic softening, as well as a three-staged evolution curve with regard to the ratchetting strain rate. The ratchetting depends greatly on the applied mean stress and stress amplitude while the ratchetting strain increases with the increasing applied mean stress and stress amplitude. Then, the evolution of dislocation patterns and deformation twinning during the uniaxial ratchetting of two-phase Ti–6Al–4V alloy were observed using transmission electron microscopy (TEM). The microscopic observation shows that deformation twinning occurs in the primary α phase and its amount increases gradually during the uniaxial ratchetting. Simultaneously, the planar dislocation evolves from discrete lines to some dislocation nets and parallel lines with the increasing number of cycles. The deformation twinning in the primary α phase is one of main contributions to the uniaxial ratchetting of Ti–6Al–4V alloy, and should be considered in the construction of corresponding constitutive model. - Highlights: • A three-staged ratchetting occurs in the stress-controlled cyclic tests of Ti–6Al–4V alloy. • Dislocation patterns change from discrete lines to nets and parallel lines. • Deformation twinning occurs during the uniaxial ratchetting. • Both dislocation slipping and twinning are the causes of ratchetting.

36 MATERIALS SCIENCE↗

Transonic dislocation propagation in diamond

Here, the motion of line defects (dislocations) has been studied for more than 60 years, but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motion between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We used femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.

36 MATERIALS SCIENCE↗

Interaction between cast silicon properties and solar cell performance

Three types of cast silicon, Silso, HEM (Heat-Exchanger Method) and UCP (Ubiquitous Crystallization Process) were studied for their use as solar cells. Optical microscopy after etching revealed a high density of uniform dislocations (approaching 1,000,000/sq cm), lines of dislocations indicating stress during crystal growth, and precipitates, some of which generate dislocations. Solar cells were fabricated by three processes. Results of solar cell processing revealed that these materials produce cells of lower efficiency than Czochralski control cells, and that the efficiencies of the three materials were quite close. Diffusion length and spectral response data are shown. Certain structural features are correlated with solar cell efficiency, diffusion length, and spectral response. Electron-beam induced current (EBIC) and light spot scanning are used to back up other measurements.

Hyland, S.↗

Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

Electron and hole cyclotron resonance at a frequency of 94 GHz is detected by a change in the intensity of photoluminescence lines whose positions are identical to those of dislocation luminescence lines D1 and D2 in single-crystal silicon and in heavily boron-doped silicon nanostructures on the Si (100) surface. The angular dependence of the spectrum of the optically detected cyclotron resonance corresponds to the tensor of the electron and hole effective mass in single-crystal silicon, and the resonance-line width indicates long carrier free-path times close to 100 ps. The results obtained are discussed within the framework of the interrelation of the electron-vibration coupling to charge and spin correlations in quasi-one-dimensional chains of dangling bonds in silicon.

36 MATERIALS SCIENCE↗

High-temperature damage evolution in 10 keV He+ irradiated W and W-5Re

Highlights: • High-temperature damage in pure W appeared strongly dependent upon foil thickness. • Visible bubbles occurred at above a threshold fluence of ~ 4.5×10{sup 19} He{sup +}/m{sup 2}. • Dislocations with b = ½ were identified and exhibited a wavy morphology. • The bypass of bubbles by dislocations operated through simple shear. • Rhenium gave rise to ~ 10-40% increase in bubble size and a pronounced change in bubble morphology. - Abstract: High-temperature damage evolution in pure W and W-5Re has been studied by combining transmission electron microscopy and in-situ irradiations with 10 keV He{sup +} ions. The irradiations covered a temperature range of T{sub irr} = 773–1473 K and a fluence range of (4.5–15) × 10{sup 19} He{sup +}/m{sup 2}. In pure W, detailed characterizations have shown that damage evolution is highly dependent upon the foil thickness. Regions of thickness irr from 773 K to 1473 K, a pronounced bubble growth and an increased degree of bubble ordering were observed. In thicker regions (≳100 nm), 1/2<111> dislocation loops and line entanglements were found up to 1473 K, and were often seen to be decorated with helium bubbles. In W-5Re, areas of different foil thickness exhibited only small differences in damage evolution. The densities of bubbles were comparable to those seen in pure W at all temperatures, while the average size of bubbles was found to be ~10–40% higher. The damage microstructure transformed from a mixture of dislocation loops and bubbles at 773 K to dislocation line entanglements decorated with bubbles at 1473 K.

36 MATERIALS SCIENCE↗

Free energy change of a dislocation due to a Cottrell atmosphere

The free energy reduction of a dislocation due to a Cottrell atmosphere of solutes is computed using a continuum model. In this work, we show that the free energy change is composed of near-core and far-field components. The far-field component can be computed analytically using the linearized theory of solid solutions. Near the core the linearized theory is inaccurate, and the near-core component must be computed numerically. The influence of interactions between solutes in neighbouring lattice sites is also examined using the continuum model. We show that this model is able to reproduce atomistic calculations of the nickel–hydrogen system, predicting hydride formation on dislocations. The formation of these hydrides leads to dramatic reductions in the free energy. Lastly, the influence of the free energy change on a dislocation’s line tension is examined by computing the equilibrium shape of a dislocation shear loop and the activation stress for a Frank–Read source using discrete dislocation dynamics.

42 ENGINEERING↗

Parquet: Regions of areal plastic dislocations (on Venus)

The extensive flat elevations of the Northern Hemisphere of Venus are covered with frequently intersecting lines of dislocations, resembling the outline of a giant parquet. In the internal sections of these regions we find grabens and regions of extension, and on the periphery lobe-shaped flow structures. The parquet was formed after the beginning of the formation of the lava plains, but covered by the youngest lava. These structures apparently arose partly because of the dragging of blocks of crust by the asthenospheric flows, and partly in the gravitational sliding of such heated blocks in the partial melting of their base. It is possible that these elevations occupy on Venus the place of the Earth's rift systems.

Sukhanov, A. L.↗

The Scattering of Phonons by Infinitely Long Quantum Dislocations Segments and the Generation of Thermal Transport Anisotropy in a Solid Threaded by Many Parallel Dislocations

A canonical quantization procedure is applied to the interaction of elastic waves—phonons—with infinitely long dislocations that can oscillate about an equilibrium, straight line, configuration. The interaction is implemented through the well-known Peach–Koehler force. For small dislocation excursions away from the equilibrium position, the quantum theory can be solved to all orders in the coupling constant. We study in detail the quantum excitations of the dislocation line and its interactions with phonons. The consequences for the drag on a dislocation caused by the phonon wind are pointed out. We compute the cross-section for phonons incident on the dislocation lines for an arbitrary angle of incidence. The consequences for thermal transport are explored, and we compare our results, involving a dynamic dislocation, with those of Klemens and Carruthers, involving a static dislocation. In our case, the relaxation time is inversely proportional to frequency, rather than directly proportional to frequency. As a consequence, the thermal transport anisotropy generated on a material by the presence of a highly-oriented array of dislocations is considerably more sensitive to the frequency of each propagating mode, and, therefore, to the temperature of the material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Flow and fracture behavior of NiAl in relation to the brittle-to-ductile transition temperature

NiAl has only three independent slip systems operating at low and intermediate temperatures whereas five independent deformation mechanisms are required to satisfy the von Mises criterion for general plasticity in polycrystalline materials. Yet, it is generally recognized that polycrystalline NiAl can be deformed extensively in compression at room temperature and that limited tensile ductility can be obtained in extruded materials. In order to determine whether these results are in conflict with the von Mises criterion, tension and compression tests were conducted on powder-extruded, binary NiAl between 300 and 1300 K. The results indicate that below the brittle-to-ductile transition temperature (BDTT) the failure mechanism in NiAl involves the initiation and propagation of cracks at the grain boundaries which is consistent with the von Mises analysis. Furthermore, evaluation of the flow behavior of NiAl indicates that the transition from brittle to ductile behavior with increasing temperature coincides with the onset of recovery mechanisms such as dislocation climb. The increase in ductility above the BDTT is therefore attributed to the climb of the 001 line type dislocations which in combination with dislocation glide enable grain boundary compatibility to be maintained at the higher temperatures.

Noebe, R. D.↗

Link statistics of dislocation network during strain hardening

Dislocations are line defects in crystals that multiply and self-organize into a complex network during strain hardening. The length of dislocation links, connecting neighboring nodes within this network, contains crucial information about the evolving dislocation microstructure. By analyzing data from Discrete Dislocation Dynamics (DDD) simulations in face-centered cubic (fcc) Cu, we characterize the statistical distribution of link lengths of dislocation networks during strain hardening on individual slip systems. Here, our analysis reveals that link lengths on active slip systems follow a double-exponential distribution, while those on inactive slip systems conform to a single-exponential distribution. The distinctive long tail observed in the double-exponential distribution is attributed to the stress-induced bowing out of long links on active slip systems, a feature that disappears upon removal of the applied stress. We further demonstrate that both observed link length distributions can be explained by extending a one-dimensional Poisson process to include different growth functions. Specifically, the double-exponential distribution emerges when the growth rate for links exceeding a critical length becomes super-linear, which aligns with the physical phenomenon of long links bowing out under stress. This work advances our understanding of dislocation microstructure evolution during strain hardening and elucidates the underlying physical mechanisms governing its formation.

Crystal plasticity↗

Ductility enhancement from interface dislocation sources in a directionally solidified beta + gamma + gamma-prime Ni-Fe-Al composite alloy

A directionally solidified beta + gamma + gamma-prime Ni-Fe-Al in situ composite alloy of composition Ni50Fe30Al20 has been used to investigate the effect of a plastically soft second phase on the mechanical behavior of a B2 ordered intermetallic alloy. This material exhibits extensive plasticity during compressive deformation at room temperature and fails in shear with extensive gamma + gamma-prime lamellar or rod pullout. The material also exhibits about 10 percent tensile elongation to fracture at room temperature, with final fracture that includes substantial necking of the gamma + gamma-prime lamellae or rods. Observation of slip lines and dislocation substructures discloses that the normally brittle beta matrix undergoes extensive plasticity in order to deform compatibly with the more ductile gamma phase. The plasticity of the beta matrix is accomplished by the generation of glissile dislocations into the beta matrix from the beta/gamma interface region and is enhanced because of a favorable beta-gamma orientation relationship for slip transfer. Ductility enhancement from interface-generated mobile dislocations generated from beta-gamma interfaces is compared to that observed in film-coated beta-NiAl single crystals and FeAl polycrystals.

Larsen, M.↗

Curvature and bow of bulk GaN substrates

We investigate the bow of free standing (0001) oriented hydride vapor phase epitaxy grown GaN substrates and demonstrate that their curvature is consistent with a compressive to tensile stress gradient (bottom to top) present in the substrates. The origin of the stress gradient and the curvature is attributed to the correlated inclination of edge threading dislocation (TD) lines away from the [0001] direction. A model is proposed and a relation is derived for bulk GaN substrate curvature dependence on the inclination angle and the density of TDs. The model is used to analyze the curvature for commercially available GaN substrates as determined by high resolution x-ray diffraction. The results show a close correlation between the experimentally determined parameters and those predicted from theoretical model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Anisotropic broadening of XRD peaks of α′-Fe: Williamson-Hall and Warren-Averbach analysis using full width at half maximum (FWHM) and integral breadth (IB)

Highlights: • There is a limited increase in the dislocation density in the martensite from the center to the surface of the specimen. • Both FWHM and Integral Breadth (IB) follows Conventional-WH model for undeformed material. • Significant perturbation from linearity observed for higher order peaks in deformed material • Between FWHM and IB-approach, the modified-WH model provides a better response with the FWHM-approach than IB-approach. - Abstract: The anisotropic broadening of the X-ray diffraction (XRD) peaks of shear deformed martensite (α′-Fe), using both full-width at half-maximum (FWHM) and integral breadth (IB), has been studied following conventional and modified Williamson-Hall (WH) and Warren-Averbach (WA) analysis. The crystallographic study reveals limited plastic deformation of martensite (α′) within a shallow depth from the shear surface, as indicated by marginal change in the character and density of dislocation, showing the inability of the α′-phase to accommodate the strain energy of shear deformation. More importantly, the study reveals significant perturbation of modified-WH and WA model, when IB is considered for size and strain analysis, especially for higher order peaks, whereas, FWHM shows reasonably good agreement with the above mentioned models for the range of diffraction spectrum considered.

36 MATERIALS SCIENCE↗

Valley-dependent Lorentz force and Aharonov-Bohm phase in strained graphene p - n junction

Veselago lens focusing in graphene p-n junction is promising for realizations of new generation electron optics devices. However, the effect of the strain-induced Aharonov-Bohm interference in a p-n junction has not been discussed before. We provide an experimentally feasible setup based on the Veselago lens in which the presence of strain can result in both the valley-dependent Lorentz force and Aharonov-Bohm interference. Inparticular, by employing the Green’s function and tight-binding methods, we study the strain induced by dislocations and line defects in a p-n junction and show how the resulting Aharonov-Bohm phase and interference can be detected. Furthermore, for a different strain configuration, e.g., corresponding to corrugated graphene, we find strong signatures of valley splitting induced by the fictitious magnetic field. Our proposal can be useful for mapping elastic deformations and defects, and for studying valley-dependent effects in graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗