Search NASA⌕ Search

SEARCH · Search NASA

Results for “Electrical techniques”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes

With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers. The study of the size-dependent electron transport properties of these nanostructures is crucial to novel electronic and electrochemical applications. In this paper, 100 nm thick n-type ultrananocrystalline diamond thin films were synthesized by microwave plasma-enhanced chemical vapor deposition method with 5% N2 gas in the plasma during the growth process. Then the nanostripes were fabricated using standard electron beam lithography and reactive ion etching techniques. The electrical transport properties of the free-standing single nanostripes of different widths from 75 to 150 nm and lengths from 1 to 128 μm were investigated. The study showed that the electrical resistivity of the n-type ultrananocrystalline diamond nanostripes increased dramatically with the decrease in the nanostripe width. The nanostripe resistivity was nearly doubted when the width was reduced from 150 nm to 75 nm. The size-dependent variability in conductivity could originate from the imposed diffusive scattering of the nanostripe surfaces which had a further compounding effect to reinforce the grain boundary scattering.

Zhou, Andrew F. (ORCID:0000000243050409)↗
DOE OSTI2023

Efficient Hydraulic-to-electric Energy Conversion for PCM-based Ocean Thermal Gradient Energy System to Power Uncrewed Underwater Vehicles

Since the 2000, there have been numerous investigations into electrical energy storage types that use ocean thermal-to-electricity conversion techniques. Field tests have demonstrated that this technology is feasible for UUVs with long-term missions of over 3,000 km per deployment. Nonetheless, the energy generated by this method is not sufficient to meet the energy requirements of Unscrewed Underwater Vehicles (UUVs). The objective of this study is to design a highly effective ocean thermal gradient energy system to support long-term missions of a UUV. To enhance the performance of the thermal gradient energy system, we have developed a hybrid type (buoyancy regulation and electrical storage). Phase Change Material (PCM)-based energy harvesting system to facilitate efficient UUV operations. A prototype of the hydraulic-to-electric conversion system was implemented, and experimental findings indicate that the hybrid system successfully delivers hydraulic energy for buoyancy change and improved efficiency of hydraulic-to-electric energy conversion, demonstrating its potential as a promising technology for supporting long-term UUV missions.

Deng, Zhiqun↗
DOE OSTI2022

Ultrathin Ruthenium Films on Graphene Buffered SiO 2 via Quasi Van der Waals Epitaxy

In this study, we demonstrate a quasi van der Waals epitaxy approach to prepare single crystalline Ru ultrathin film on large scale, monolayer graphene. Physical and epitaxial properties of bulk, near surface and surface of ultrathin Ru films were comprehensively studied using various structural, morphological, compositional, and electrical characterization techniques. Here, we confirm that Ru can epitaxially grow on single, monolayer graphene using magnetron sputtering at elevated temperature of 600 °C. The epitaxial Ru films with film thickness ranging from 94.2 nm down to 3.9 nm show the (0001) out-of-plane orientation. The epitaxial relationships between Ru and graphene are out-of-plane Ru(0001) || graphene(0001) and in-plane Ru[$11\bar20$] || graphene[$11\bar20$]. All the Ru films show smooth surfaces with root-mean-square roughness less than 0.8 nm and have negligible oxide layer on the surfaces. The Ru films on graphene demonstrate significantly reduced electrical resistivity comparing to their counterpart grown on bare SiO 2 , which show polycrystalline nature. For 7.1 to 3.9 nm film thicknesses, the resistivity of Ru on graphene shows 38 to 45% resistivity decrease from that of Ru film on bare SiO 2 without graphene. Our observations suggest the existence of the above-classical van der Waals interaction between Ru and graphene. On the other hand, graphene is capable of effectively blocking the inter-diffusion/interaction between Ru and SiO 2 during a 1000 °C annealing process.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic structure of the honeycomb iridate Cu 2 ⁢IrO 3 at high pressure

Cu 2 IrO 3 has attracted recent interest due to its proximity to the Kitaev quantum spin liquid state and the complex structural response observed at high pressures. We use x-ray spectroscopy and scattering as well as electrical transport techniques to unveil the electronic structure of Cu 2 IrO 3 at ambient and high pressures. Despite featuring a Ir 4+ J eff = 1/2 state at ambient pressure, Ir L 3 -edge resonant inelastic x-ray scattering reveals broadened electronic excitations that point to the importance of Ir 5d-Cu 3d interaction. High pressure first drives an Ir-Ir dimer state with collapsed < L · S > and < L z >/< S z >, signaling the formation of 5d molecular orbitals. A novel Cu → Ir charge transfer is observed above 30 GPa at low temperatures, leading to an approximate Ir 3+ and Cu 1.5+ valence, with persistent insulating electrical transport seemingly driven by charge segregation of Cu 1+ /Cu 2+ ions into distinct sites. Concomitant x-ray spectroscopy and diffraction measurements through different thermodynamic paths demonstrate a strong electron-lattice coupling, with J eff = 1/2 and Ir 3+ /Cu 1.5+ electronic states occurring only in phases 1 and 5, respectively. Remarkably, the charge-transfer state can only be reached if Cu 2 IrO 3 is pressurized at low temperature, suggesting that phonons play an important role in the inhibiting this phase. Furthermore, these results point to the choice of thermodynamic path across interplanar collapse transition as a key parameter to access novel states in intercalated iridates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Evaluation of PV Module Packaging Strategies of Monofacial and Bifacial PERC Using Degradation Pathway Network Modeling

As the PV industry is rapidly expanding, it is important to thoroughly investigate the long-term impact of packaging strategies on the performance of PV modules. In this study, the variants in sets differ on the basis of manufacturer (A/B), encapsulant (EVA/POE), rear encapsulant (UV-cutoff/opaque/transparent), module architecture (GB/DG) and cell type (monofacial/bifacial). The minimodules were exposed for 2520 hours in modified damp heat, with or without full spectrum light. Every 504 hours, stepwise electrical characterization techniques were employed to track changes in minimodules. Degradation pathway modeling using network structural equation modeling was employed to study pairwise relationships between variables and service lifetime prediction in minimodules. Through this study, differences in quality control are identified in minimodules made by different manufacturers. Minimodules with UV-cutoff rear encapsulant show relatively better stability, whereas the ones with opaque rear encapsulant show greater power loss. In addition, GB having UV-cutoff rear encapsulation and GB with POE having opaque rear encapsulation were identified to be stable as they lack a best model fit. Here, the primary power loss mechanism in degrading variants is interconnect corrosion.

14 SOLAR ENERGY↗
NASA NTRS1993

A comparison of in situ measurements of vector-E and - vector-V x vector-B from Dynamics Explorer 2

Dynamics Explorer-2 provided the first opportunity to make a direct comparison of in situ measurements of the high-latitude convection electric field by two distinctly different techniques. The vector electric field instrument (VEFI) used antennae to measure the intrinsic electric fields and the ion drift meter (IDM) and retarding potential analyzer (RPA) measured the ion drift velocity vector, from which the convection electric field can be deduced. The data from three orbits having large electric fields at high latitude are presented, one at high, one at medium, and one at low altitudes. The general agreement between the two measurements of electric field is very good, with typical differences at high latitudes of the order of a few millivolts per meter, but there are some regions where the particle fluxes are extremely large (e.g., the cusp) and the disagreement is worse, probably because of IDM difficulties. The auroral zone potential patterns derived from the two devices are in excellent agreement for two of the cases, but not in the third, where bad attitude data may be the problem. At low latitudes there are persistent differences in the measurements of a few millivolts per meter, though these differences are quite constant from orbit to orbit. This problem seems to arise from some shortcoming in the VEFI measurments. Overall, however, these measurements confirm the concept of `frozen-in' plasma that drifts with velocity vector-E x vector-B/B(exp 2) within the measurement errors of the two techniques.

Hanson, W. B.↗
DOE OSTI2026

Experimental Characterization and Modeling of High Hole Mobility GeSn Quantum Wells: The Role of Alloy Disorder Scattering

Understanding mechanisms influencing electrical transport in material systems not only provides a scientific explanation for observed behavior but also offers insight into ways to enhance transport in devices. This study reports experimental hole mobility of 8 x 10 4 cm 2 V -1 s -1 in a Ge 0.92 Sn 0.08 , the highest recorded mobility for the GeSn system. A study of the material's quality is presented using structural and electrical characterization techniques, with transport data being supported by simulations using an extensive modeling framework. Quantum Hall measurements further indicate the material's high quality and potential spintronic applications, with extracted values of 0.0689$m$ 0 and 13.6 for the effective mass and effective g‐factor, respectively. It is observed that transport is limited by alloy disorder scattering at cryogenic temperatures. A comparative study between the presented structure and similar quantum well heterostructures revealed that the difference in hole mobilities is captured by a disparity in the reduced nominal alloy disorder scattering potential (Δ U alloy = 0.8 eV), that is lower than the value of a fully random alloy (Δ U alloy = 1.4–1.7 eV) potential. The difference in Δ U alloy suggests that heterostructures with similar geometries and alloy compositions can have different alloy disorder scattering, implying that an underlying mechanism, such as short‐range order, may be responsible and warrants further investigation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules

A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed. Commercially available aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) double heterostructure is used both as emitter and photodetector in the proposed optocoupler. A detailed study on the electroluminescence and spectral response of the AlGaAs/GaAs structure is conducted at elevated temperatures. The material figure of merit parameter, D*, is calculated in the temperature range 77–800 K. The fabricated optocoupler is tested at elevated temperatures, and the results are presented.

42 ENGINEERING↗
DOE OSTI2020

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O 3 treatments

Plasma etching of p-type GaN creates n-type nitrogen vacancy (V N ) defects at the etched surface, which can be detrimental to device performance. In mesa isolated diodes, etch damage on the sidewalls degrades the ideality factor and leakage current. Here a treatment was developed to recover both the ideality factor and leakage current, which uses UV/O 3 treatment to oxidize the damaged layers followed by HF etching to remove them. The temperature dependent I–V measurement shows that the reverse leakage transport mechanism is dominated by Poole–Frenkel emission at room temperature through the etch-induced V N defect. Depth resolved cathodoluminescence confirms that the damage is limited to first several nanometers and is consistent with the V N defect.

42 ENGINEERING↗
DOE OSTI2025

Epitaxial integration of superconducting nitrides with cubic GaN

Epitaxial combination of transition metal nitrides and group III-nitrides holds significant potential for novel device architectures, given their wide array of properties and similar lattice constants. However, the mixture of hexagonal and cubic crystals limits structural quality and has stymied development. This work will discuss the molecular beam epitaxy synthesis of metastable cubic GaN on 3C-SiC templates and its integration with cubic ZrN and NbN superconductors in single and multilayer heterostructures. The fully cubic nature of GaN and the epitaxial nature of all layers are confirmed via in situ and ex situ techniques. The electrical transport properties of transition metal nitrides on cubic GaN (001) are compared to those grown directly on 3C-SiC (001) and c-plane hexagonal GaN templates. The determination of a similar growth window for cubic wide-bandgap and superconducting metal nitrides creates a platform for new epitaxial device architectures and potential applications in metamaterials, quantum information science, and condensed matter physics.

Condensed matter physics↗
DOE OSTI2020

Study of the ferromagnetic quantum phase transition in Ce 3– x Mg x Co 9

The Ce 3-x Mg x Co 9 system evolves from a Pauli paramagnetic ground state for x = 0 to a ferromagnetic ground state for x≈0.80 in single-phase, polycrystalline samples [Lamichhane, V. Taufour, A. Palasyuk, Q. Lin, S.L. Budko, and P.C. Canfield, Ce3-xMgxCo9 : transformation of a Pauli paramagnet into a strong permanent magnet, Phys. Rev. Appl. 9 (2018), p. 024023]. In order to better understand this behaviour, single-crystalline samples of Ce 3-x Mg x Co 9 for x = 0.01, 0.16, 0.24, 0.35, 0.43 and 0.50 were grown using the flux growth technique, and electrical transport and magnetic properties were studied. The T C-x phase diagram we infer shows that the system has a quantum phase transition near x = 0.35, transforming to a ferromagnetic ground state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Rapid assessment of REBCO CC angular critical current density J c (B, T = 4.2 K, θ) using torque magnetometry up to at least 30 tesla

Abstract Detailed design of REBa 2 Cu 3 O 7 − x (REBCO)-based magnets ideally relies on knowledge of the full angular and wide temperature range characterization of the critical current I c of the REBCO coated conductors (CC) at high magnetic fields. In practice, however, obtaining I c ( B , T , θ ) data by the commonly used electrical transport technique is expensive, tedious, and difficult, due to high critical current values that exceed 2000 A for B | | a b -plane ( θ = 90 deg). The conductors are often damaged during angular transport measurements at angles approaching the ab -plane. Therefore, so far, REBCO magnets have been designed without full I c ( B , T , θ ) data sets. Here, we present J c ( B , T , θ ) results for more than twenty samples of CC all made to the same advanced pinning specification produced by SuperPower Inc. For this, we employed torque magnetometry, benchmarking the results to transport I c measurements mostly made away from ab -plane, finding good agreement with scaling factors ≈1–1.3. What is striking is the huge variety of properties exhibited by the samples, even for CC made recently. Given the huge attention now being paid to the effects of screening currents and to the torques generated by offsets between the tape plane and the local magnetic field vector, our data set suggests some caution in detailed design of such magnets without having data of the type presented here.

Physics↗
DOE OSTI2021

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near-telecom photoemission, high spin number, and nearly temperature-independent ground-state zero-field splitting. We report the realization of nanotesla shot-noise-limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieve a sensitivity of 50 nT/√Hz and a theoretical shot-noise-limited sensitivity of 3.5 nT/√Hz. This is accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Large spin-to-charge conversion in ultrathin gold-silicon multilayers

Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin-diffusion length and strong interfacial spin-orbit coupling. However, discrepancies between the values of the spin Hall angle of gold reported in the literature have brought into question the microscopic origin of the spin Hall effect in Au. Here, we investigate the thickness dependence of the effective spin-charge conversion efficiency in single Au films and ultrathin Au/Si multilayers by nonlocal transport and spin-torque ferromagnetic resonance measurements. We show that the inferred effective spin-charge conversion efficiency is strongly enhanced in ultrathin Au/Si multilayers, reaching exceedingly large values of 0.99 ± 0.34 when the thickness of the individual Au layers is scaled down to 2 nm. These findings reveal the coexistence of a strong interfacial spin-to-charge conversion effect, which becomes dominant in ultrathin Au, and bulk spin Hall effect with a relatively low bulk spin Hall angle of 0.012 ± 0.005. Furthermore, our experimental results suggest the key role of the intrinsic spin Hall effect enhancement along with a strong interfacial spin-orbit coupling-related effect in the large spin-to-charge conversion in ultrathin Au.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Superconductivity in the Parent Infinite-Layer Nickelate NdNiO 2

We report evidence for superconductivity with onset temperatures up to 11 K in thin films of the infinite-layer nickelate parent compound NdNiO 2 . A combination of oxide molecular beam epitaxy and atomic hydrogen reduction yields samples with high crystallinity and low residual resistivities, a substantial fraction of which exhibit superconducting transitions. We survey a large series of samples with a variety of techniques, including electrical transport, scanning transmission electron microscopy, x-ray absorption spectroscopy, and resonant inelastic x-ray scattering, to investigate the possible origins of superconductivity. We propose that superconductivity could be intrinsic to the undoped infinite-layer nickelates but suppressed by disorder due to a possibly sign-changing order parameter, a finding which would necessitate a reconsideration of the nickelate phase diagram. Another possible hypothesis is that the parent materials can be hole doped from randomly dispersed apical oxygen atoms, which would suggest an alternative pathway for achieving superconductivity. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗
DOE OSTI2021

Understanding Topological Pseudospin Transport in Van Der Waals' Materials

Because of symmetry, crystals often have degenerate valleys in the conduction or the valence band. This “valley” degree of freedom, similar to electronic charge and spin, has been proposed as an information carrier for new classes of electronic and optoelectronic devices. The basic requirement of information processing is to be able to create and manipulate a flow of valley pseudospin, i.e. valley pseudospin current. Valley pseudospin currents have been demonstrated in recent experiments in monolayer molybdenum disulfide and graphene on hexagonal boron nitride. However, the key fundamental questions regarding the nature of valley pseudospin transport remain open. This project will investigate the importance of Berry curvature effects in valley pseudospin transport and explore regimes for quantized valley Hall conductivity and pure valley pseudospin currents. The study will rely on combined optical and electrical transport techniques to create, manipulate and detect valley pseudospin currents in two-dimensional (2D) van der Waals’ materials of hexagonal structure. The insights provided by this research will deepen the understanding of valley pseudospin transport in 2D and help the development of novel valley-based technologies.

36 MATERIALS SCIENCE↗