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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Effect of Electron Beam Irradiation on the Tensile Properties of Carbon Nanotubes Sheets and Yarns

Carbon nanotube sheets and yarns were irradiated using electron beam (e-beam) energy to determine the effect of irradiation dose on the tensile properties. Results showed that a slight change in tensile strength occurred after irradiating as-received CNT sheets for 20 minutes, and a slight decrease in tensile strength as the irradiation time approached 90 minutes. On the other hand, the addition of small molecules to the CNT sheet surface had a greater effect on the tensile properties of e-beam irradiated CNT sheets. Some functionalized CNT sheets displayed up to a 57% increase in tensile strength following 90 minutes of e-beam exposure. In addition, as-received CNT yarns showed a significant increase in tensile strength as the irradiation time increased.

Williams, Tiffany S.↗
NASA NTRS1984

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗
NASA NTRS1976

Electron beam irradiation of thinned backside illuminated CCDs

The physical properties of backside illuminated surface channel CCD arrays and a pixel buried channel CCD array when bombarded with electrons were studied. The devices were mounted in a high vacuum system and irradiated with electrons generated by an electron gun. Basic measurements of EBS gain, dead voltage, transfer efficiency and dark current were performed to verify proper device operation. The surface channel devices were then irradiated with electrons of up to 8 keV energy for up to 98 hours while the buried channel device was irradiated with electrons.

Borsuk, G. M.↗
NASA NTRS1981

Electrostatic discharging behaviour of Kapton irradiated with electrons

The electrostatic charging and discharging of Kapton when irradiated with monoenergetic electrons of 5 to 30 keV energy were studied. The leakage currents and rates of discharging always increased with the incident electron energy and flux, whereas the surface voltage showed a more complex behavior depending on the thickness of the material: for the thinner films it exhibited a maximum and then fell at higher energies. The surface voltage, the rate of discharging, and the peak current and total charge flow during a discharge were enhanced as the temperature was decreased from 70 C to -180 C, and were accompanied by a decreasing leakage current. Visible light or the presence of an aluminum coating on the irradiated surface caused reductions in the surface voltage and changes in the discharging characteristics. The results are discussed in terms of the leakage currents and the secondary emission of electrons. Photomicrographs taken after irradiation, and photographs of samples during irradiation, show good correlations between the positions of light flashes and of pinholes produced by the discharge arcs.

Verdin, D.↗
NASA NTRS1989

Thermal annealing of GaAs concentrator solar cells

The thermal annealing of GaAs concentrator cells after electron irradiation is reported. Results are given for cells annealed at 150, 200, and 250 C. Isochronal annealing was done for 20 min intervals up to 350 C. For cells irradiated with electrons of energies between 0.7 and 2.3 MeV, the recovery decreases with increasing electron energy. Isothermal and isochronal annealing produce the same recovery. Cells irradiated to 3 x 10 to the 15th or 1 x 10 to the 16th e/sq cm recover to similar unannealed fractions. Significant annealing is seen starting at 150 C, although very long times are required.

Curtis, H. B.↗
NASA NTRS1981

Experimental validation of a numerical model predicting the charging characteristics of Teflon and Kapton under electron beam irradiation

The effect differential charging of spacecraft thermal control surfaces is assessed by studying the dynamics of the charging process. A program to experimentally validate a computer model of the charging process was established. Time resolved measurements of the surface potential were obtained for samples of Kapton and Teflon irradiated with a monoenergetic electron beam. Results indicate that the computer model and experimental measurements agree well and that for Teflon, secondary emission is the governing factor. Experimental data indicate that bulk conductivities play a significant role in the charging of Kapton.

Hazelton, R. C.↗
NASA NTRS1991

Evaluation of optically transparent polyetherimide films for applications in space

Several series of aromatic polyetherimide films have been synthesized and characterized with the objective of obtaining maximum optical transparency for applications in space. Incorporation of phenoxy groups into aromatic polyimides has resulted in a reduction in the color intensity of these films compared to commercial polyimide film by reducing electronic interactions between polymer chains. The resulting lightly colored to colorless polyetherimide films have been characterized by UV-visible and infrared spectroscopy before and after exposure to varying doses of UV and electron irradiation designed to simulate use as second-surface mirror thermal control coatings. After exposure to 300 equivalent solar hours UV irradiation and 1 MeV electron irradiation, the polyetherimides were 2.2 to 2.6 times more transparent than commercial polyimide film of the same thickness.

St. Clair, Anne K.↗
NASA NTRS1987

Effects of radiation damage on the silicon lattice

Silicon was irradiated with both proton and electron particle beams in order to investigate changes in the structural and optical properties of the lattice as a result of the radiation damage. Lattice expansions occurred when large strain fields (+0.34 percent) developed after 1- and 3-MeV proton bombardment. The strain was a factor of three less after 1-MeV electron irradiation. Average increases of approximately 22 meV in the 3.46-eV interband energy gap and 14 meV in the Lorentz broadening parameter were measured after the electron irradiation.

Dumas, Katherine A.↗
NASA NTRS2013

Bulk Cutting of Carbon Nanotubes Using Electron Beam Irradiation

According to some embodiments, the present invention provides a method for attaining short carbon nanotubes utilizing electron beam irradiation, for example, of a carbon nanotube sample. The sample may be pretreated, for example by oxonation. The pretreatment may introduce defects to the sidewalls of the nanotubes. The method is shown to produces nanotubes with a distribution of lengths, with the majority of lengths shorter than 100 tun. Further, the median length of the nanotubes is between about 20 nm and about 100 nm.

Ziegler, Kirk J.↗
NASA NTRS1983

Recovery of damage in rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20 percent within 30 days after irradiation.

Brucker, G. J.↗
NASA NTRS2015

Electron Beam Irradiated Intercalated CNT Yarns For Aerospace Applications

Multi-walled CNT yarns have been experimentally and commercially created to yield lightweight, high conductivity fibers with good tensile properties for application as electrical wiring and multifunctional tendons. Multifunctional tendons are needed as the cable structures in tensegrity robots for use in planetary exploration. These lightweight robust tendons can provide mechanical strength for movement of the robot in addition to power distribution and data transmission. In aerospace vehicles, such as Orion, electrical wiring and harnessing mass can approach half of the avionics mass. Use of CNT yarns as electrical power and data cables could reduce mass of the wiring by thirty to seventy percent. These fibers have been intercalated with mixed halogens to increase their specific electrical conductivity to that near copper. This conductivity, combined with the superior strength and fatigue resistance makes it an attractive alternative to copper for wiring and multifunctional tendon applications. Electron beam irradiation has been shown to increase mechanical strength in pristine CNT fibers through increased cross-linking. Both pristine and intercalated CNT yarns have been irradiated using a 5-megavolt electron beam for various durations and the conductivities and tensile properties will be discussed. Structural information obtained using a field emission scanning electron microscope, energy dispersive X-ray spectroscopy (EDS), and Raman spectroscopy will correlate microstructural details with bulk properties.

electrical wiring↗
NASA NTRS1993

UV testing of solar cells: Effects of antireflective coating, prior irradiation, and UV source

Short-circuit current degradation of electron irradiated double-layer antireflective-coated cells after 3000 hours ultraviolet (UV) exposure exceeds 3 percent; extrapolation of the data to 10(exp 5) hours (11.4 yrs.) gives a degradation that exceeds 10 percent. Significant qualitative and quantitative differences in degradation were observed in cells with double- and single-layer antireflective coatings. The effects of UV-source age were observed and corrections were made to the data. An additional degradation mechanism was identified that occurs only in previously electron-irradiated solar cells since identical unirradiated cells degrade to only 6 +/- 3 percent when extrapolated 10(exp 5) hours of UV illumination.

Meulenberg, A.↗
NASA NTRS1988

Degradation of graphite-epoxy due to electron radiation

Experimental results are presented showing that electron irradiation has a variable effect on the properties of graphite-epoxy depending upon the test temperature and the property of interest. In general, compression properties are improved at cold temperature and degraded at elevated temperature. With the exception of some moduli, tensile and shear properties are degraded at both cold and elevated temperatures. Electron irradiation lowers the glass transition temperature of graphite/epoxy significantly. Property degradation of irradiated materials at the elevated temperature is associated with the reduction in Tg. It is shown that a (0) compression-strength test is the most sensitive test for exhibiting the effects of electron irradiation. Results from tests on neat resin also show that the bulk matrix is degraded after irradiation, and that the correlation between resin and composite response is good.

Herakovich, C. T.↗
NASA NTRS1993

Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

Mueller, Robert L.↗