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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Theoretical description of the diimide molecule

The N2H2 molecule is only metastable and as a consequence is not well characterized experimentally. Therefore, we have carried out extensive Hartree-Fock calculations in order to determine equilibrium geometries, one-electron properties, and the relative energies of the cis and trans isomers. In addition, Hartree-Fock and multiconfiguration calculations were carried out to determine the mechanism for isomerization. The trans isomer was found to be 6.6 kcal/mole more stable than the cis form using a basis set which included polarization functions. The lowest energy path found for isomerization occurred by inversion about one nitrogen (rather than rotation about the NN bond) with an activation energy of 47 kcal/mole. Excitation energies for the lowest singlet and triplet excited states are also presented.

Winter, N. W.↗
NASA NTRS1976

Slow ions in plasma wind tunnels

One of the limitations of simulation experiments for the study of interaction between a satellite and its space environment is the background of slow ions in the plasma chamber. These ions appear to be created by charge exchange between the beam ions and residual neutral gas and may affect measurements of the current and potential in the wake. Results are presented for a plasma wind tunnel experiment to study the effect of slow ions on both the ion and electron current distribution and the electron temperature in the wake of a body in a streaming plasma. It is shown that the effect of slow ions for beam ion density not exceeding 3 is not significant for measurements of ion current variations in the wake zone. This is not the case when studies are aimed at the quantitative examination of electron current and temperature variations in the near wake zone. In these instances, the measurements of electron properties in the wake should be done at very low system pressures or over a range of system pressures in order to ascertain the influence of slow ions.

Oran, W. A.↗
NASA NTRS1976

The MPD arc as a plasmadynamic laser source

The paper reports results of measurements of local plasma properties (electron density and temperature, radiance, and population density) in the recombining plasma flow of a high power (100 kW) quasi-steady MPD arc designed as a plasmadynamic laser source. The profiles of electron density and temperature and the populations of excited states of Ar II show large deviations from LTE and indicate the existence of population inversions between the 4d and 4p states.

Campbell, E. M.↗
NASA NTRS1978

Hot forming of silicon sheet, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.

Graham, C. D., Jr.↗
NASA NTRS1979

The processing of semiconductor materials

Five experiments involving the processing of semiconductor materials were performed during the Skylab mission. After discussions on semiconductors and their unique electronic properties, and techniques of crystal growth, these five experiments are presented. Four melt growth experiments were attempted: (1) steady state growth and segregation under zero gravity (InSb); (2) seeded, containerless solidification of InSb; (3) influence of gravity-free solidification on microsegregation; and (4) directional solidification of InSb-GaSb alloys. One vapor growth experiment, crystal growth by vapor transport, was attempted.

Source record↗
NASA NTRS1978

On the electronic structure of the 2 1A1 state of methylene

The electronic structure of the 2 1A1 state of methylene is studied using multiconfiguration self-consistent-field and extended configuration interaction wavefunctions, as a prelude to a detailed investigation of the role of excited states in the chemistry of carbenes. Using selected one-electron properties as a guide, correlated wavefunctions obtained by different approaches are compared for the purpose of establishing qualitative differences between 1 1A1 and 2 1A1 states.

Bauschlicher, C. W., Jr.↗
NASA NTRS1980

Crystal growth of device quality GaAs in space

The apparatus and techniques used in effort to determine the relationships between crystal growth and electronic properties are described with emphasis on electroepitaxy and melt-grown gallium aresenide crystal. Applications of deep level transient spectroscopy, derivative photocapitance spectroscopy, and SEM-cathodoluminescene in characterizing wide bandgap semiconductors; determining photoionization in MOS, Schottky barriers, and p-n junctions; and for identifying inhomogeneities are examined, as well as the compensation of indium phosphide.

Gatos, H. C.↗
NASA NTRS1979

Some characteristics of low-cost silicon sheet

The paper discusses structural defects in low-cost silicon sheets and their effect on the electronic properties related to solar cell performance. Experimental data are presented on the influence of grain boundaries on minority carrier diffusion length, impurity defect interaction, and variable surface recombination velocity. An analytical model of the effect of grain boundaries on solar cell performance is constructed based on these results.

Koliwad, K. M.↗
NASA NTRS1981

Ionic conductivity and thermoelectric power of pure and Al2O3-dispersed AgI

Ionic and electronic conductivities, and thermoelectric power have been measured for AgI and AgI containing a dispersion of submicron size Al2O3 particles. While the dispersion of Al2O3 enhances the ionic conductivity significantly, it does not affect the electronic properties of the matrix. The enhancement is a strong function of the size and concentration of the dispersoid. Various models have been tested to account for the enhanced conduction. However, the complex behavior of the present results points out the need for more sophisticated theoretical models. Ionic conduction and thermoelectric power data suggest that the dispersed Al2O3 generates an excess of cation vacancies and thereby enhances the conductivity and suppresses the thermoelectric power of the matrix. The individual heats of transport of cation interstitials and vacancies have been estimated and compared to their respective migration energies.

Shahi, K.↗
NASA NTRS1982

Studies of clusters in the gas phase and application to an understanding of transitions from gaseous to the surface and condensed state

Studies of the structure, stability, electronic properties, and formation kinetics of small clusters were reviewed which provide information useful in furthering understanding of nucleation processes, liquid state properties, and the nature of surfaces. Using mass spectrometric coupled with various high pressure ion clustering and Stark effect-molecular beam techniques, the details of the primary clustering steps leading to the nucleation of bulk liquid from the vapor were and obtained by direct observation results are presented.

Castleman, A. W., Jr.↗
NASA NTRS1981

Care, feeding, and use of charge-coupled device /CCD/ imagers at Palomar observatory

The paper describes the optical, mechanical, and electronic properties of the TI and RCA CCDs which have been applied to two-dimensional photometry and spectroscopy at Palomar. The drive, processing, and recording techniques are also discussed, and consideration is given to a focal conversion optical system, the Prime Focus Universal Extragalactic Instrument (PFUEI), which is used to more optimally match the Hale 5 meter plate scale. Calibration and data analysis are also examined.

Gunn, J. E.↗
NASA NTRS1982

Study of the photovoltaic effect in thin film barium titanate

The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.

Grannemann, W. W.↗
NASA NTRS1982

On the nature of S II emission from Jupiter's hot plasma torus

An effective electron temperature T(e) of 80,000 K is indicated by the Voyager 1 encounter Jupiter hot torus emission rates in the 6731, 1256, 911 and reclassified 765 A transitions of S II. A set of 53 measurements of the S II red line doublet obtained at 5.9 Jupiter radii shows strong, irregular fluctuations in intensity, but no variation in the line ratio. At this distance from Jupiter, the torus is found to be longitudinally uniform in density; this is consonant with Voyager UVS findings, but contrary to magnetic anomaly model predictions. It is suggested that presently unidentified ion-ion and/or iron-atom reactions are responsible for the S II component irregular variations, in view of the fact that electron properties are regular and variable only over a small range in the hot torus at 5.9 Jupiter radii.

Brown, R. A.↗
NASA NTRS1985

Structure variation of the index of refraction of GaAs-AlAs superlattices and multiple quantum wells

A detailed calculation of the index refraction of various GaAs-AlAs superlattices is presented for the first time. The calculation is performed by using a hybrid approach which combines the k-p method with the pseudopotential technique. Appropriate quantization conditions account for the influence of the superstructures on the electronic properties of the systems. The results of the model are in very good agreement with the experimental data. In comparison with the index of refraction of the corresponding AlGaAs alloy, characterized by the same average mole fraction of Al, the results indicate that the superlattice index of refraction values attain maxima at the various quantized transition energies. For certain structures the difference can be as large as 2 percent. These results suggest that the waveguiding and dispersion relation properties of optoelectronic devices can be tailored to design for specific optical application by an appropriate choice of the superlattice structure parameters.

Kahen, K. B.↗
NASA NTRS1985

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1985

Light-induced effects-impacts to module performance measurements and reliability testing: An overview

The stability of solar cells is a key factor in determining the reliability of photovoltaic modules and is of great interest in the case of solar cells having a new technology which has not yet been fully developed. In particular this question arises with hydrogenated amorphous silicon (a-Si) solar cells because a-Si exhibits reversible light induced changes in its electronic properties, commonly referred to as the Staebler-Wronski effect (SWE). Continuous progress is being made in the peak conversion efficiencies of a-Si solar cells and efficiencies in excess of 11% have been achieved. However, stability is still a problem. ARCO Solar reports results on solar cells which, after over a year's exposure to sunlight, under open circuit conditions, still have about 7% conversion efficiency. Other results show a region of fast degradation for about a month, after which the degradation diminishes rapidly.

Wronski, C. R.↗
NASA NTRS1985

New outlook on control of crystalline and chemical perfection during growth of silicon

Significant progress has been made in our understanding of the Czochralski crystal growth process with the realization that the incorporation of oxygen into silicon is directly related to the internal gettering capability of wafers during device fabrication. It was also recognized that the electronic properties exhibited by silicon during various stages of device fabrication were significantly affected by the thermal history of the silicon during the post-growth cool-down period. Turbulent melt convection, induced by unavoidable destabilizing thermal gradients, was found to interfere with homogeneous dopant (and oxygen) incorporation and to influence markedly the dynamics of nonequilibrium point defects in the solidified silicon matrix during the cool-down period. In view of the unavoidability of destabilizing thermal gradients in conventional crystal growth configurations, melt stabilization through the application of magnetic fields is generally considered a viable approach. Control of heat input to the melt through heat pipe systems, as used during growth of germanium, cannot be applied to industrial growth of silicon. Recent studies have shown that heat exchange systems located coaxially about a growing crystal can be used to stabilize and control not only heat transfer in the grown crystal, but also in the melt adjacent to the solidification interface.

Witt, A. F.↗