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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
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NASA NTRS1992

Focal plane arrays for submillimeter waves using two-dimensional electron gas elements: A grant under the Innovative Research Program

This final report describes a three-year research effort, aimed at developing new types of THz low noise receivers, based on bulk effect ('hot electron') nonlinearities in the Two-Dimensional Electron Gas (2DEG) Medium, and the inclusion of such receivers in focal plane arrays. 2DEG hot electron mixers have been demonstrated at 35 and 94 GHz with three orders of magnitude wider bandwidth than previous hot electron mixers, which use bulk InSb. The 2DEG mixers employ a new mode of operation, which was invented during this program. Only moderate cooling is required for this mode, to temperatures in the range 20-77 K. Based on the results of this research, it is now possible to design a hot electron mixer focal plane array for the THz range, which is anticipated to have a DSB receiver noise temperature of 500-1000K. In our work on this grant, we have found similar results the the Cronin group (resident at the University of Bath, UK). Neither group has so far demonstrated heterodyne detection in this mode, however. We discovered and explored some new effects in the magnetic field mode, and these are described in the report. In particular, detection of 94 GHz and 238 GHz, respectively, by a new effect, 'Shubnikov de Haas detection', was found to be considerably stronger in our materials than the cyclotron resonance detection. All experiments utilized devices with an active 2DEG region of size of the order of 10-40 micrometers long, and 20-200 micrometers wide, formed at the heterojunction between AlGaAs and GaAs. All device fabrication was performed in-house. The materials for the devices were also grown in-house, utilizing OMCVD (Organo Metallic Chemical Vapor Deposition). In the course of this grant, we developed new techniques for growing AlGaAs/GaAs with mobilities equalling the highest values published by any laboratory. We believe that the field of hot electron mixers and detectors will grow substantially in importance in the next few years, partly as a result of the opportunity given us through this grant, which represents the major effort in the US so far. We note, however, that parallel research on hot electron mixers in thin film superconductors in Russia, and recently in Sweden, have demonstrated mixing up to 1 THz, with the potential for low-noise receivers for frequencies up to many THz. The three groups recently assessed the relative adtantages of 2DEG and superconducting film mixers in a joint paper (Kollberg et al., 1992; see Appendix II).

Yngvesson, K. Sigfrid↗
NASA NTRS1993

Wide-bandwidth electron bolometric mixers - A 2DEG prototype and potential for low-noise THz receivers

This paper presents a new type of electron bolometric ('hot electron') mixer. We have demonstrated a 3 order-of-magnitude improvement in the bandwidth compared with previously known types of electron bolometric mixers, by using the two-dimensional electron gas (2DEG) medium at the heterointerface between AlGaAs and GaAs. We have tested both in-house MOCVD-grown material and MBE material, with similar results. The conversion loss (Lc) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that Lc can be decreased to about 10 dB in future devices. Calculated and measured curves of Lc versus P(LO), and I(DC), respectively, agree well. We argue that there are several different configurations of electron bolometric mixers, which will all show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

Yang, Jian-Xun↗
NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗
NASA NTRS1992

AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments

The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

Yngvesson, K. S.↗
NASA NTRS2003

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗
NASA NTRS2001

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗
NASA NTRS1979

Magnetospheric multiharmonic instabilities

The paper discusses linear convective growth rates of instabilities of electrostatic multiple electron cyclotron harmonic waves in a plasma consisting of a hot electron component with a loss-cone type of free energy source and a cold electron component of presumably ionospheric origin. When the ratio of cold to hot electron temperature is small, the cold upper hybrid frequency controls the harmonic bands that can be nonconvectively stable. When this ratio increases above a few times 0.01, nonconvective instability disappears simultaneously for each harmonic band, when the density ratio is less than unity. A consistent interpretation of the spatial localization and harmonic frequency bandwidths of the observed waves can be made assuming linear convective saturation, provided that the cold electrons have temperatures considerably in excess of those in the ionosphere.

Ashour-Abdalla, M.↗
NASA NTRS1972

Investigation of the aluminium-aluminium oxide reversible transformation as observed by hot stage electron microscopy.

Thin foils of high purity aluminium and an Al-Al2O3 SAP type of alloy were oxidised in a specially designed hot stage specimen chamber in an electron microscope. Below 450 C, amorphous aluminium oxide formed on the foil surface and was first detectable at foil edges, holes, and pits. Islands of aluminium then nucleated in this amorphous oxide. The aluminium islands displayed either a lateral growth with eventual coalescence with other islands, or a reoxidation process which caused the islands to disappear. The aluminium island formation was determined to be related to the presence of the electron beam. A mechanism based upon electron charging due to the electron beam was proposed to explain the nucleation, growth, coalescence, disappearance, and geometry of the aluminium islands.

Grove, C. A.↗
NASA NTRS2005

Radial Variations in the Io Plasma Torus during the Cassini Era

A radial scan through the midnight sector of the Io plasma torus was made by the Cassini Ultraviolet Imaging Spectrograph on 14 January 2001, shortly after closest approach to Jupiter. From these data, Steffl et al. (2004a) derived electron temperature, plasma composition (ion mixing ratios), and electron column density as a function of radius from L = 6 to 0 as well as the total luminosity. We have advanced our homogeneous model of torus physical chemistry (Delamere and Bagenal, 2003) to include latitudinal and radial variations in a manner similar to the two-dimensional model by Schreier et al. (1998). The model variables include: (1) neutral source rate, (2) radial transport coefficient, (3) the hot electron fraction, (4) hot electron temperature, and (5) the neutral O/S ratio. The radial variation of parameters 1-4 are described by simple power laws, making a total of nine parameters. We have explored the sensitivity of the model results to variations in these parameters and compared the best fit with previous Voyager era models (schreier et al., 1998), galileo data (Crary et al., 1998), and Cassini observations (steffl et al., 2004a). We find that radial variations during the Cassini era are consistent with a neutral source rate of 700-1200 kg/s, an integrated transport time from L = 6 to 9 of 100-200 days, and that the core electron temperature is largely determined by a spatially and temporally varying superthermal electron population.

Delamere, P. A.↗
NASA NTRS1989

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗
NASA NTRS1990

Modeling solar flare conduction fronts. I - Homogeneous plasmas and ion-acoustic turbulence. II - Inhomogeneous plasmas and ambipolar electric fields

A one-dimensional, electrostatic, particle-in-cell simulation is used here to model the expansion of a heated electron population in a coronal loop during a solar flare and the characteristics of the associated X-ray emissions. The hot electrons expand outward from the localized region, creating an ambipolar electric field which accelerates a return current of cooler, ambient electrons. Ion-acoustic waves are generated by the return currents as proposed by Brown et al. (1979), but they play little or no role in containing energetic electrons and the conduction front proposed by Brown et al. does not form. The X-ray emission efficiency of the electrons is too low in the corona for them to be the source of hard X-ray bursts. The particle dynamics changes dramatically if the heated plasma is at low altitudes and expands upward into the more tenuous plasma at higher altitudes. Two important applications of this finding are the radio-frequency heating of the corona and the collisional heating of the chromosphere by precipitating energetic electrons. In both cases, the overlying plasma has a density that is too low to supply a balancing return current to the expanding hot electrons. As a result, an ambipolar electric field develops that tends to confine the energetic electrons behind a front that propagate outward at about the speed of sound.

Mckean, M. E.↗
NASA NTRS1981

The lower hybrid density drift instability with cold plasma

The linear Vlasov dispersion relation for the lower hybrid density drift instability is studied in a four component (hot electrons and protons, cold electrons and protons) plasma. The introduction of a cold ion population monotonically reduces the maximum growth rate of the instability. Reduction of the ratio of temperatures of the cold and hot plasmas reduces both the real frequency and the growth rate of the instability. Near a ratio of the cold and hot plasma temperatures of 0.01 a higher frequency branch of this instability emerges and for a fixed ratio of cold and hot electron density exhibits an increasing maximum growth rate as the ratio of the cold and hot plasma temperatures decreases further. The ratio of the cold and hot plasma temperatures for the ions is the crucial parameter and deserves detailed magnetospheric studies.

Gary, S. P.↗
NASA NTRS1983

The states of Cygnus X-1

HEAO 3 High Resolution Gamma-Ray Spectrometer observations of Cygnus X-1 in the 48-300 keV range, along with correlated 3-6 keV Ariel 5 data, have led to the identification of a new state for this object with low flux in both the soft and hard X-ray regions. This is followed by a slow increase in the hard X-ray flux to the normal low state of the source, characterized by a low intensity soft X-ray emission and a high intensity hard X-ray emission. The new 'superlow' state is interpreted in terms of the Compton model, where the X-ray emission arises from the scattering of low energy photons and one-billion K hot electrons. The superlow state may be seen as one extreme of a continuum of low state behavior, given that Compton cooling should begin to quench the hot electrons at higher soft X-ray fluxes, giving rise to the softer X-ray spectrum and to the anticorrelation in changes in the soft and hard X-ray fluxes.

Ling, J. C.↗
NASA NTRS1985

Absolute response and noise equivalent power of cyclotron resonance-assisted InSb detectors at submillimeter wavelengths

Spectra are presented of the responsivity and noise equivalent power (NEP) of liquid-helium-cooled InSb detectors as a function of magnetic field in the range 20-110 per cm. The measurements are all made using a Fourier transform spectrometer with thermal sources. The results show a discernable peak in the detector response at the conduction electron cyclotron resonance (CCR) frequency for magnetic fields as low as 3 kG. The magnitude of responsivity at the resonance peaks is roughly constant with magnetic field and is comparable to the low-frequency hot-electron bolometer response. The NEP at the peaks is found to be comparable to the best long wavelength results previously reported. For example, NEP = 4.5 x 10 to the 13th W/(square root of Hz) at 4.2 K, 6 kG, and 40 per cm was measured. The InSb CCR will provide a much improved detector for laboratory spectroscopy, as compared with hot electron bolometers, in the 20-100 per cm range.

Brown, E. R.↗
NASA NTRS1998

Gamma-Ray Spectra and Variability of Cygnus Z-1 Observed by BATSE

We present new BATSE earth occultation observations of the 25 keV-1.8 MeV spectrum and variability of Cygnus X-1 made between August 1993 and May 1994. We observed that the normal soft gamma ray spectrum (gamma2) of Cygnus X-1 has two components: a Comptonized part seen below 300 keV, and a high-energy tail in the 0.3 - 2 MeV range. We interpret it in terms of a two-layer region, consisting of a high-energy core (with an equivalent electron temperature of approximately 210-250 keV) near the event horizon, embedded in an about 50 keV corona. In this scenario, the observed 25-300 keV photons were produced by Compton scattering of soft photons (about 0.5 keV) by the hot electrons in the outer corona. These same hard x rays were further up-scattered by a population of energetic electrons in the inner core, producing the spectral tail above 300 keV. Cygnus X-1 went through an extended sequence of transitions between August 1993 and May 1994, when the 45-140 keV flux first decreased steadily from approximately gamma2 to roughly one-quarter of its intensity over a period of about 140 days. The flux remained at this low level for about 40 days before returning, swiftly (approximately 20 days) to approximately the initial gamma2 level. During the transition, the spectrum evolved to a shape consistent with either a power law with photon index of about 2.6 or a single temperature Compton model with electron temperature kT = 110 +/- 11 keV, and optical depth t = 0.40 +/- 0.06, and then returned essentially to the original gamma2 spectrum at the end of the active period. The overall cooling of the system during the low flux period may be due to an increase in the soft photon population which effectively quenched the hot electrons in these regions through Compton scattering.

Ling, J. C.↗