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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Neutron irradiation induced defects in oxides and their impact on the oxide properties

Understanding the irradiation-induced defects in oxides is of interest for a wide range of applications. ZnO is an interesting oxide with mixed ionic and covalent bonding that contains a variety of point defect structures—making it an excellent model for studying irradiation-induced defects and their impact on properties. Here, we investigate the effects of neutron irradiation on the formation of defects and on the structural, optical, and electrical properties of ZnO single crystals. We observe the formation of vacancies and voids via positron annihilation spectroscopy. Neutron irradiation led to a significant deterioration of the ZnO structure and formed a high concentration of point defects, vacancy clusters, and voids with large disparities in their structure across variable irradiation times. It also led to significant changes in the optical properties and sample color. Irradiation for 444 h induced a high concentration of Cu acceptors as well as a high concentration of Ga donors. Additionally, temperature-dependent Hall effect measurements revealed the competing production of donors and acceptors and showed an increase in the slope of the carrier freeze-out curve with increasing irradiation dose. This work demonstrates the combined effects of neutron irradiation in producing a wide range of structural defects, impurities, and dopants in oxides and their enormous impact on modifying the oxide structure and both the optical and electronic properties. It particularly emphasizes the importance of considering the production of new impurities and dopants during the neutron irradiation of oxides.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

AlScN is attractive as a lattice-matched epitaxial barrier layer for incorporation in GaN high electron mobility transistors due to its large dielectric constant and polarization. The transport properties of polarization-induced two-dimensional (2D) electron gas of densities of ∼2×10 13 /cm 2 formed at the AlScN–GaN interface is studied by Hall-effect measurements down to cryogenic temperatures. The 2D electron gas densities exhibit mobilities limited to ∼300 cm 2 /V s down to 10 K at AlScN/GaN heterojunctions. The insertion of a ∼2 nm AlN interlayer boosts the room temperature mobility by more than five times from ∼300 cm 2 /V s to ∼1573 cm 2 /V s, and the 10 K mobility by more than 20 times to ∼6980 cm 2 /V s at 10 K. These measurements provide guidelines to the limits of electron conductivities of these highly polar heterostructures.

42 ENGINEERING↗
DOE OSTI2020

Physical Properties of Half-Heusler Antiferromagnet MnPtSn Single Crystal

Herein we report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties. MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature T N at about 215 K, distinctly different from the ferromagnetism of MnPtSn polycrystal. Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86 × 10 22 cm –3 at 5 K. Moreover, the carrier mobility is also rather low (4.7 cm 2 ·V –1 s –1 at 5 K). The above results strongly suggest that the significant Mn/Sn anti-site defects, i.e., the content of Mn in MnPtSn single crystal, play a vital role on structural, magnetic and transport properties

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Degenerate doping in B-Ga 2 O 3 Single Crystals through Hf-doping

n-type conductivity of β-Ga 2 O 3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of β-Ga 2 O 3 single crystals using UV–vis-NIR absorption and Hall effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze and Czochralski method in mixed Ar + O 2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in β-Ga 2 O 3 with a measured electron concentration ~2 × 10 19 cm -3 , mobility 80–65 cm 2 V -1 s -1 , and resistivity down to 5 mΩ cm in our samples. The concentration of Hf was measured to be 1.3 × 10 19 atoms cm -3 using glow discharge mass spectroscopy on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 × 10 19 cm -3 ).

36 MATERIALS SCIENCE↗
DOE OSTI2026

Spin pumping driven by magnon-polaritons in a ferromagnet–coplanar superconducting resonator hybrid system

We demonstrate spin pumping driven by a strongly coupled magnon-photon system using a ferromagnet-coplanar superconducting resonator hybrid system at 1.4 K. Electrical readout via the inverse spin-Hall effect reveals characteristic coupling features, including mode splitting and linewidth broadening, demonstrating the electrical detection of strongly coupled microwave photons and magnons. The microwave magnon-photon coupling strength obtained by combined spin pumping and inverse spin-Hall effect measurements is compared to microwave transmission experiments. Here, microwave power-dependent measurements reveal a decrease in the coupling strength with increasing microwave power alongside the onset of nonlinearities of the superconducting resonator above a critical microwave power threshold.

Wagle, Dinesh [University of Delaware, Newark, DE ↗
DOE OSTI2025

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Pressure tuning of the charge density wave and superconductivity in 2 H -TaS 2

Both the vibrational and electrical transport properties of 2 H -TaS 2 have been investigated at high pressures and low temperatures. In this work, the collapse of the charge-density-wave order at pressures above 7.3 GPa has been verified by Raman scattering, resistivity, and Hall coefficient measurements. For pressures above the critical pressure of 7.3 GPa, the superconducting transition temperature continues to increase and reaches its maximum value at 11.5 GPa, suggesting that it is not a simple competition between the charge-density-wave order and superconductivity. Through the standard resistivity fit in the normal state, the decline of the superconducting transition temperature with increasing pressure up to 47.0 GPa is due to the decrease of interaction strength and the increase of the impurity scattering. These results are very important in understanding the superconducting mechanism of transition-metal dichalcogenides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Enhanced anomalous Nernst effect in disordered Dirac and Weyl materials

Here, we analyze the thermoelectric response of Dirac and Weyl semimetals using the semiclassical approach, focusing on the extrinsic contributions due to skew-scattering and side jump. Our results apply to the linear response Nernst effect in ferromagnetic Dirac materials such as Fe 3 Sn 2 and Weyl semimetals like Co 3 Sn 2 S 2 . In the case of Fe 3 Sn 2 we obtain a very good agreement with known experimental anomalous Hall effect measurements, and based on that we predict a large Nernst effect in this material.We also extend the investigation to second-order response, focusing on monolayer graphene on hBN with trigonal warping as an example. Our analysis indicates that the extrinsic contributions can be a significant component of anomalous Nernst response and may be used to explain an enhanced thermoelectric response.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Thermodynamic insights into the intricate magnetic phase diagram of EuAl 4

The tetragonal intermetallic compound EuAl 4 hosts an exciting variety of low-temperature phases. In addition to a charge density wave below 140 K, four ordered magnetic phases are observed below 15.4 K. Recently, a skyrmion phase was proposed based on Hall effect measurements under a c-axis magnetic field. Here, we present a detailed investigation of the phase transitions in EuAl 4 under c-axis magnetic field. Our dilatometry, heat-capacity, DC magnetometry, AC magnetic susceptibility, and resonant ultrasound spectroscopy measurements reveal three magnetic phase transitions not previously reported. The first key result is a detailed H ∥ [001] magnetic phase diagram mapping the seven phases we observe. Second, we identify a high-field phase, phase VII, which directly corresponds to the region were skyrmions have been previously suggested. Our results provide guidance for future studies exploring the complex magnetic interactions and spin structures in EuAl 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Enhancement of the Curie temperature in single-crystalline ferromagnetic LaCrGe 3 by electron irradiation-induced disorder

LaCrGe 3 has attracted attention as a potential candidate for studies of quantum phase transitions in a ferromagnetic material. The application of pressure avoids a quantum critical point by developing a new magnetic phase. It was suggested that the disorder may provide an alternative route to a quantum critical point. We used low-temperature 2.5 MeV electron irradiation to induce relatively small amounts of pointlike disorder in single crystals of LaCrGe 3 . Irradiation leads to an increase of the resistivity at all temperatures with some deviation from the Matthiessen rule. Hall effect measurements show that electron irradiation does not cause any detectable change in the carrier density. Unexpectedly, the Curie temperature, T FM , increases with the increase of disorder from approximately 90 K in pristine samples up to nearly 100 K in the heavily irradiated sample, with a tendency towards saturation at higher doses. This effect is observed both in resistivity and magnetization measurements. Although the mechanism of this effect is not entirely clear, we conclude that it cannot be caused by effective “doping” or “pressure” due to electron irradiation. Finally, we suggest that disorder-induced broadening of a sharp peak in the density of states, D⁡(E), situated at E p = E F – 0.25 eV below the Fermi energy, E F , causes an increase in D⁡(E F ), leading to an enhancement of T FM in this itinerant ferromagnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Strain-induced majority carrier inversion in ferromagnetic epitaxial LaCo O 3 - δ thin films

Tensile-strained LaCoO 3-δ thin films are ferromagnetic, in sharp contrast to the zero-spin bulk, although no clear consensus has emerged as to the origin of this phenomenon. While magnetism has been heavily studied, relatively little attention has been paid to electronic transport, due to the insulating nature of the strain-stabilized ferromagnetic state. Here, structure, magnetism, and transport are studied in epitaxial LaCoO 3-δ films (10–22-nm thick) on various substrates (from 1.4% compressive to 2.5% tensile strain), using synchrotron x-ray diffraction, scanning probe and transmission electron microscopy, magnetometry, polarized neutron reflectometry, resistivity, and Hall effect. High quality, smooth films are obtained, exhibiting superstructures associated with both oxygen vacancy ordering and periodic in-plane ferroelastic domains. Consistent with prior work, ferromagnetism with an approximately 80–85 K Curie temperature is observed under tension; polarized neutron reflectometry confirms a relatively uniform magnetization depth profile, albeit with interfacial dead layer formation. Electrical transport is found to have similar semiconducting nature to bulk, but with reduced resistivity and activation energy. Hall effect measurements, however, reveal a striking inversion of the majority carrier type, from p-type in the bulk and under compression to n-type under tension. While thus far overlooked, ferromagnetism in epitaxial LaCoO 3-δ films is thus directly correlated with n-type behavior, providing important insight into the ferromagnetic state in this system. Here, aided by density functional theory calculations, these results are interpreted in terms of tensile-strain-induced orbital occupation and band structure changes, including a rapid decrease in effective mass at the e g -derived conduction band minimum, and corresponding increase at the valence band maximum.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Sample-dependent and sample-independent thermal transport properties of α – RuCl 3

In this study, we investigated the thermal transport properties of two α–RuCl 3 crystals with different degrees of stacking disorder to understand the origin of the previously reported oscillatory feature in the field dependence of thermal conductivity. Crystal I shows only one magnetic order around 13 K, which is near the highest T N for α–RuCl 3 with stacking faults. Crystal II has less stacking disorder, with a dominant heat capacity at 7.6 K along with weak anomalies at 10 and 13 K. In the temperature and field dependence of thermal conductivity, no obvious anomaly was observed to be associated with the magnetic order around 13 K for either crystal or around 10 K for crystal II. Crystal II showed clear oscillations in the field dependence of thermal conductivity, while crystal I did not. For crystal I, an L-shaped region in the temperature-field space was observed where thermal Hall conductivity κ xy /T is within ±20% of the half quantized thermal Hall conductivity κ HQ /T, while for crystal II, κ xy /T reaches κ HQ /T only in the high field and high temperature regime with no indication of a plateau at κ HQ /T. Our thermal conductivity data suggest the oscillatory features are inherent to the zigzag ordered phase with T N near 7 K. Our planar thermal Hall effect measurements suggest the sensitivity of this phenomena to stacking disorder. Overall, our results highlight the importance of understanding and controlling crystallographic disorder for obtaining and interpreting intrinsic thermal transport properties in α–RuCl 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evidence of antiferromagnetism in ultrathin metallic (111)-oriented LaNiO 3 films

Antiferromagnets with exotic spin textures promise low-power spintronic devices with extremely high operating frequencies and resistance to external perturbations. In particular, the combination of highly tunable correlated electron physics, as in complex oxides, with metallicity and antiferromagnetism is desirable but exceedingly rare. LaNiO 3 , the lone example of a perovskite nickelate which is metallic across all temperatures, has long been a promising candidate, but the antiferromagnetic metallic state has remained elusive. Here, we demonstrate the emergence of this state in ultrathin films of (111)-oriented LaNiO 3 using a combination of polarized neutron reflectometry, low-energy muon spectroscopy and anomalous Hall effect measurements, and density functional theory calculations with a Hubbard U term. Further, we find a highly strained symmetry-breaking interfacial region which may support canting of the AFM moments leading to a vanishingly small net magnetization at the film-substrate interface, providing a convenient route toward control of the Néel order. Evidence of antiferromagnetic metallic behavior in (111)LNO films highlights the role of crystal symmetry in tuning the novel quantum states in complex oxides.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Laser Crystallization and Dopant Activation of a-Si:H Carrier-Selective Layer in TOPCon Si Solar Cells

Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. Here, the laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm 2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

14 SOLAR ENERGY↗
DOE OSTI2024

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗
DOE OSTI2022

Flux Creep in a Bi-2212 Rutherford Cable for Particle Accelerator Applications

Bi-2212 superconducting cables are being considered for use in the high field magnets needed for the next generation of particle accelerators. Magnetization in these cables and the decay of that magnetization lead to field error and field-error drift, respectively, which need to be compensated. To study this, a segment of the winding pack was extracted from a racetrack coil made from Bi-2212 Rutherford cable. Using a Hall probe measurement technique, we measured the response of the cable's magnetization and its magnetization decay to changes in the applied magnetic field. The effect of adjustments to the cycling of the magnetic field was studied, intended to simulate the preinjection cycles of an accelerator magnet. Three M vs. H loops were constructed by sweeping the magnetic field applied to the sample from 0 to 2.5 T, then to a preinjection field 'x' (where x = 0, 0.25, 0.75 T), and finally up to 1 T. The applied field was then held at 1 T for 1500 s, and the magnetization decay was measured. Finally, the decay was found to vary from 8% to 14% after 1500 s, depending on the preinjection field cycle.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Selective volatile organic compound gas sensor based on carbon nanotubes functionalized with ZnO nanoparticles

Here this paper describes the theory and results for a new class of low-cost chemoresistive gas sensors designed for selective hydrocarbon gas detection. The sensors utilize a multiwalled carbon nanotube (MWCNT) backbone functionalized with metal oxide nanocrystals. Specifically, nanoparticles were grown on the surface of the MWCNTs using atomic layer deposition. The crystallinity of the ZnO-MWCNTs' heterostructure was examined by using a high-resolution transmission electron microscope. The structure of the ZnO/MWCNTs was analyzed using a scanning electron microscope and energy dispersive x ray. The Hall effect measurement shows p-type characteristics of the MWCNTs, supporting the typical PN junction formation with n-type ZnO nanocrystals. The electron-donating ability of ZnO provided a strong response to the ppm levels of toluene at room temperature (25 °C) and showed strong selectivity with other volatile organic compound gases such as benzene, methane, and formaldehyde.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Local Berry curvature signatures in dichroic angle-resolved photoelectron spectroscopy from two-dimensional materials

Topologically nontrivial two-dimensional materials hold great promise for next-generation optoelectronic applications. However, measuring the Hall or spin-Hall response is often a challenge and practically limited to the ground state. An experimental technique for tracing the topological character in a differential fashion would provide useful insights. In this work, we show that circular dichroism angle-resolved photoelectron spectroscopy provides a powerful tool that can resolve the topological and quantum-geometrical character in momentum space. In particular, we investigate how to map out the signatures of the momentum-resolved Berry curvature in two-dimensional materials by exploiting its intimate connection to the orbital polarization. A spin-resolved detection of the photoelectrons allows one to extend the approach to spin-Chern insulators. The present proposal can be extended to address topological properties in materials out of equilibrium in a time-resolved fashion.

36 MATERIALS SCIENCE↗