Search NASA⌕ Search

SEARCH · Search NASA

Results for “Impurity levels”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Catalyst Substrates Remove Contaminants, Produce Fuel

A spacecraft is the ultimate tight building. We don t want any leaks, and there is very little fresh air coming in, says Jay Perry, an aerospace engineer at Marshall Space Flight Center. As a result, there is a huge potential for a buildup of contaminants from a host of sources. Inside a spacecraft, contaminants can be introduced from the materials that make spacecraft components, electronics boxes, or activities by the crew such as food preparation or cleaning. Humans also generate contaminants by breathing and through the body s natural metabolic processes. As part of the sophisticated Environmental Control and Life Support System on the International Space Station (ISS), a trace contaminant control system removes carbon dioxide and other impurities from the cabin atmosphere. To maintain healthy levels, the system uses adsorbent media to filter chemical contaminant molecules and a high-temperature catalytic oxidizer to change the chemical structure of the contaminants to something more benign, usually carbon dioxide and water. In the 1990s, while researching air quality control technology for extended spaceflight travel, Perry and others at Marshall were looking for a regenerable process for the continuous removal of carbon dioxide and trace chemical contaminants on long-duration manned space flights. At the time, the existing technology used on U.S. spacecraft could only be used once, which meant that a spacecraft had to carry additional spare parts for use in case the first one was depleted, or the spacecraft would have to return to Earth to exchange the components.

Source record↗

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Wang, Ling Jun↗

Surface photovoltage spectroscopy applied to gallium arsenide surfaces

The experimental and theoretical basis for surface photovoltage spectroscopy is outlined. Results of this technique applied to gallium arsenide surfaces, are reviewed and discussed. The results suggest that in gallium arsenide the surface voltage may be due to deep bulk impurity acceptor states that are pinned at the Fermi level at the surface. Establishment of the validity of this model will indicate the direction to proceed to increase the efficiency of gallium arsenide solar cells.

Bynik, C. E.↗

Low Cost Solar Array Project: Composition Measurements by Analytical Photon Catalysis

The applicability of the photon catalysis technique for effecting composition analysis of silicon samples was assessed. Third quarter activities were devoted to the study of impurities in silicon matrices. The evaporation process was shown to be congruent; thus, the spectral analysis of the vapor yields the composition of the bulk sample. Qualitative analysis of metal impurities in silicon was demonstrated e part per million level. Only one atomic spectral interference was noted; however, it is imperative to maintain a leak tight system due to chemical and spectral interferences caused by the presence of even minute amounts of oxygen in the active nitrogen afterglow.

Sutton, D. G.↗

Oxygen impurity effects at metal/silicide interfaces - Formation of silicon oxide and suboxides in the Ni/Si system

The effect of implanted oxygen impurities on the Ni/Ni2Si interface is investigated using X-ray photoelectron spectroscopy, He-4(+) backscattering and O(d, alpha)-16 N-14 nuclear reactions. Oxygen dosages corresponding to concentrations of 1, 2, and 3 atomic percent were implanted into Ni films evaporated on Si substrates. The oxygen, nickel, and silicon core lines were monitored as a function of time during in situ growth of the Ni silicide to determine the chemical nature of the diffusion barrier which forms in the presence of oxygen impurities. Analysis of the Ni, Si, and O core levels demonstrates that the formation of SiO2 is responsible for the Ni diffusion barrier rather than Ni oxide or mixed oxides, such as Ni2SiO4. It is determined that 2.2 x 10 to the 16th O/qu cm is sufficient to prevent Ni diffusion under UHV annealing conditions.

Grunthaner, P. J.↗

Undercooling of acoustically levitated molten drops

It was observed that the acoustically levitated molten SCN (succinonitrile) drops can generally be undercooled to a degree where the impurities in the drop are responsible for the nucleation of the solid phase. However, it was also observed that ultrasound occasionally terminates undercooling of the levitated drops by initiating the nucleation of the solid at an undercooling level which is lower than that found for the nucleation catalyzed by the impurities in the drop. This premature nucleation can be explained by thermodynamic considerations which predict an increase in effective undercooling of the liquid upon the collapse of cavities. Pre-existing gas microbubbles which grow under the influence of ultrasound are suggested as the source of cavitation. The highly undercooled SCN drops can be utilized to measure the growth velocity of the solid in the deeply undercooled region including the hypercooled region.

Ohsaka, K.↗

Electronic characterization of defects in narrow gap semiconductors

The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method.

Patterson, James D.↗

Origin of SiC impurities in silicon crystals grown from the melt in vacuums

A main source of high carbon levels in silicon crystals grown from melt under reduced pressures and contained in silica crucibles supported by graphite retainer/susceptor was identified by thermodynamic analysis. The calculations were verified by experimental results and the carbon level is reduced by approximately 50% with the use of molybdenum retainers.

Schmid, F.↗

Electrolytic pretreatment unit gaseous effluent conditioning

The electrolytic pretreatment of urine is an advanced process that eliminates the need for handling and storing the highly corrosive chemicals that are normally used in water reclamation systems. The electrolytic pretreatment process also converts the organic materials in urine to gases (N2 and O2) that can be used to replenish those lost to space by leakage, venting, and air lock operations. The electrolytic process is more than a pretreatment, since it decreases the urine solids content by approximately one third, thus reducing the load and eventual solids storage requirements of the urine processing system. The evolved gases from the pretreatment step cannot, however, be returned directly to the atmosphere of a spacecraft without first removing several impurities including hydrogen, chlorine, and certain organic compounds. A treatment concept was developed that would decrease the impurities in the gas stream that emanates from an electrolysis unit to levels sufficiently low to allow the conditioned gas stream to be safely discharged to a spacecraft atmosphere. Two methods were experimentally demonstrated that can accomplish the desired cleanup. The bases of the two methods are, repectively: (1) raw urine scrubbing and (2) silica gel sorption.

Colombo, G. V.↗

Flat-plate solar array project. Volume 2: Silicon material

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Lutwack, R.↗

Analysis of the effects of impurities in silicon

A solar cell fabrication and analysis program was conducted to determine the effects on the resultant solar cell efficiency of impurities intentionally incorporated into silicon. It was found that certain impurities such as titanium, tantalum, and vanadium were bad, even in very small concentrations. Cell performance appeared relatively tolerable to impurities such as copper, carbon, calcium, chromium, iron and nickel (in the concentration levels which were considered).

Wohlgemuth, J.↗

The effects of contamination on gaseous X-ray detectors

Results are presented which detail how the performance of a proportional counter degrades when oxygen is added as a contaminant. It is demonstrated that argon based gas fillings are much less sensitive to electronegative impurities than are xenon filled detectors which can show significant deterioration for contamination levels as low as 10 ppm. The data are particularly relevant to X-ray astronomy, where sealed systems must operate for long periods of time.

Ramsey, B. D.↗

A study of irradiation-induced defects in silicon using low temperature photoluminescence

Irradiation-induced defects in silicon, using low temperature photoluminescence as a probe of defect properties were investigated. The goal of this research was to gain new understanding of defects which degrade solar cell characteristics in a radiation environment. In this regard, an important aspect of this program was a study of radiation damage and annealing in lithium doped silicon, which is useful in reducing solar cell degradation. Luminescence was used to study defects because this property reveals electron transitions through a number of defect energy levels at any given annealing stage; the luminescence spectra give excellent resolution of many defect energy levels, and these measurements can be used to give defect symmetry in the lattice, impurity dependence, and annealing properties.

Streetman, B. G.↗

The effects of alloy purity on the mechanical behavior of soft oriented NiAl single crystals

Preliminary results of the effects of alloy purity on the mechanical properties of NiAl single crystals are presented. Two stoichiometric NiAl single crystals with different impurity contents were studied. It is concluded that reductions in the interstitial and substitutional levels cause reduced yield strengths in NiAl. Heat treatment also results in reduced yield and flow stresses in both CP-NiAl and Hp-NiAl which are considered to be due to a reduction in the concentration of thermal vacancies due to vacancy coalescence during heat treatment.

Weaver, M. L.↗

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗

Morphology and Luminescence Properties of Transition Metal Doped Zinc Selenide Crystals

Zinc selenide is an excellent matrix material to dope with rare-earth and transition metal to achieve mid-infrared luminescence to develop high power lasers. The luminescence, morphology and refractive index is significantly affected by the doping and defects generated due to size and valency of dopants, concentration, growth process and convection during the growth. The aim of the study is to investigate effect of point and line defects generated due to low doping of iron and chromium on the emission and morphology of the zinc selenide. Luminescence and morphological properties of large iron and chromium doped zinc selenide single crystals were studied to evaluate the effect of extremely low residual impurities and defects associated with the doping process. The emission properties following both short wavelength (i.e., ultraviolet; 350 – 370 nm) excitation and longer wavelength (i.e., near infrared; 850 – 870 nm) excitation were characterized. Luminescence emission bands were identified in both doped crystals. In addition to the primary emission bands, satellite peaks and intra-center transitions were also observed. Due to local population defects associated with the residual impurities (ppm to ppb) in the Fe-ZnSe and Cr-ZnSe crystals, peak emission wavelengths were observed to shift. Raman studies using 266 and 532 – nm excitation revealed different positions of longitudinal and transverse peaks for Fe-ZnSe and Cr-ZnSe crystals, associated with different levels of defects due to the different ion sizes. The emission bands were found to decrease in intensity due to recombination of residual impurity co-dopants and complex defects generated during growth and fabrication. Cryogenic temperature analyses revealed a very clean emission band due to freezing of some of the point and line defects. An emission band observed at 980 nm for both crystals at room temperature as well as cryogenic temperatures indicates a vibronic peak in ZnSe. The scanning electron microscopy (SEM) images of the local morphology support the conclusion that small crystallites in doped crystals are also present.

Zinc selenide↗