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We compare several photon-counting detector technologies for use as near-infrared timeresolved laser receivers in science instrument, communication and navigation systems. The key technologies are InGaAs(P) photocathode hybrid photomultiplier tubes and InGaAs(P) and HgCdTe avalanche photodiodes. We discuss recent experimental results and application.
InGaAs and Ge avalanche photodiodes (APDs) are examined for the effects of 63-MeV protons on dark current. Dark current increases were large and similar to prior results for silicon APDs, despite the smaller size of InGaAs and Ge devices. Bulk dark current increases from displacement damage in the depletion regions appeared to be the dominant contributor to overall dark current degradation. Differences in displacement damage factors are discussed as they relate to structural and material differences between devices.
This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate.
In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.
Photovoltaic arrays of the rainbow type, equipped with light-concentrator and spectral-beam-splitter optics, have been investigated in a continuing effort to develop lightweight, high-efficiency solar electric power sources. This investigation has contributed to a revival of the concept of the rainbow photovoltaic array, which originated in the 1950s but proved unrealistic at that time because the selection of solar photovoltaic cells was too limited. Advances in the art of photovoltaic cells since that time have rendered the concept more realistic, thereby prompting the present development effort. A rainbow photovoltaic array comprises side-by-side strings of series-connected photovoltaic cells. The cells in each string have the same bandgap, which differs from the bandgaps of the other strings. Hence, each string operates most efficiently in a unique wavelength band determined by its bandgap. To obtain maximum energy-conversion efficiency and to minimize the size and weight of the array for a given sunlight input aperture, the sunlight incident on the aperture is concentrated, then spectrally dispersed onto the photovoltaic array plane, whereon each string of cells is positioned to intercept the light in its wavelength band of most efficient operation. The number of cells in each string is chosen so that the output potentials of all the strings are the same; this makes it possible to connect the strings together in parallel to maximize the output current of the array. According to the original rainbow photovoltaic concept, the concentrated sunlight was to be split into multiple beams by use of an array of dichroic filters designed so that each beam would contain light in one of the desired wavelength bands. The concept has since been modified to provide for dispersion of the spectrum by use of adjacent prisms. A proposal for an advanced version calls for a unitary concentrator/ spectral-beam-splitter optic in the form of a parabolic curved Fresnel-like prism array with panels of photovoltaic cells on two sides (see figure). The surface supporting the solar cells can be adjusted in length or angle to accommodate the incident spectral pattern. An unoptimized prototype assembly containing ten adjacent prisms and three photovoltaic cells with different bandgaps (InGaP2, GaAs, and InGaAs) was constructed to demonstrate feasibility. The actual array will consist of a lightweight thin-film silicon layer of prisms curved into a parabolic shape. In an initial test under illumination of 1 sun at zero airmass, the energy-conversion efficiency of the assembly was found to be 20 percent. Further analysis of the data from this test led to a projected energy conversion efficiency as high as 41 percent for an array of 6 cells or strings (GaP, AlGaAs, InGaP2, GaAs, and two different InGaAs cells or strings).
The Ocean Color Instrument (OCI) on NASA’s Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) mission is a hyperspectral Earth imager with a spatial resolution of 1 km x 1 km and a spectral resolution of 5 nm in 2.5 nm steps over 342-887 nm. In addition, OCI provides 7 discrete bands in the 940-2260 nm Short-Wave InfraRed (SWIR) range. The front-end optical imager is a rotating mirror-based system that images the ground scene onto a slit with an instantaneous field of view of 16 km x 1 km. For the SWIR bands, the slit-image is re-imaged onto a 16x1 micro-lens array that effectively acts as the focal plane since each lens element is fiber coupled to wavelength filtered InGaAs and HgCdTe Photo Diodes (PDs). The pulse response of the detection system is critical to OCI SWIR performance. We find that PDs introduce an inherent slow tail in the pulse response due to slow diffusion moving carriers in their n and p regions. We show that this introduces response errors ranging from 1 down to 0.01 % for up to tens of science pixels after the pulse depending on the PD design and materials. It is shown that the response is distinctly different for the InGaAs and HgCdTe PDs. We explain how the front-end design can further increase this error. Finally, we detail the cause of the slow pulse response tail, how to model it, its impact on OCI performance and how it is characterized and corrected to meet OCI requirements.
The Ocean Color Instrument (OCI) on NASA’s Plankton, Aerosol, Cloud, ocean Ecosystem (PACE) mission is a hyperspectral Earth imager with a spatial resolution of 1 km x 1 km and a spectral resolution of 5 nm in 2.5 nm steps over 342-887 nm. In addition, OCI provides 7 discrete bands in the 940-2260 nm Short-Wave InfraRed (SWIR) range. The front-end optical imager is a rotating mirror-based system that images the ground scene onto a slit with an instantaneous field of view of 16 km x 1 km. For the SWIR bands, the slit-image is re-imaged onto a 16x1 micro-lens array that effectively acts as the focal plane since each lens element is fiber coupled to wavelength filtered InGaAs and HgCdTe Photo Diodes (PDs). The pulse response of the detection system is critical to OCI SWIR performance. We find that PDs introduce an inherent slow tail in the pulse response due to slow diffusion moving carriers in their n and p regions. We show that this introduces response errors ranging from 1 down to 0.01 % for up to tens of science pixels after the pulse depending on the PD design and materials. It is shown that the response is distinctly different for the InGaAs and HgCdTe PDs. We explain how the front-end design can further increase this error. Finally, we detail the cause of the slow pulse response tail, how to model it, its impact on OCI performance and how it is characterized and corrected to meet OCI requirements.
InGaAs and Ge avalanche photodiodes are compared for the effects of 63-MeV protons on dark current. Differences in displacement damage factors are discussed as they relate to structural differences between devices.
Colloidal quantum dots (CQDs) are promising materials for infrared (IR) light detection due to their tunable bandgap and their solution processing; however, to date, the time response of CQD IR photodiodes is inferior to that provided by Si and InGaAs. It is reasoned that the high permittivity of II–VI CQDs leads to slow charge extraction due to screening and capacitance, whereas III–Vs—if their surface chemistry can be mastered—offer a low permittivity and thus increase potential for high-speed operation. In initial studies, it is found that the covalent character in indium arsenide (InAs) leads to imbalanced charge transport, the result of unpassivated surfaces, and uncontrolled heavy doping. Surface management using amphoteric ligand coordination is reported, and it is found that the approach addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm 2 V -1 s -1 ) with a 4× reduction in permittivity compared to PbS CQDs. Finally, the resulting photodiodes achieve a response time faster than 2 ns—the fastest photodiode among previously reported CQD photodiodes—combined with an external quantum efficiency (EQE) of 30% at 940 nm.
Semiconductor saturable absorber mirrors (SESAMs) enable passive modelocking of several ultrafast solid-state lasers. Conventionally, SESAMs in the 1-µm wavelength range have employed InGaAs quantum wells (QWs) as absorbers. Here we demonstrate a SESAM based on InAs/GaAs submonolayer quantum dots (SML QDs) capable of generating femtosecond pulses by passively modelocking a vertical-external-cavity surface-emitting laser (VECSEL). Structural measurements are carried out to verify the quality and composition of the QDs. Modelocking experiments with a VECSEL and the QD SESAM in a ring cavity configuration yield pulses as short as 185 fs at 1025 nm. Compared to a traditional QW absorber, SML QD SESAMs exhibit ~ 25% faster recovery times. This also translates to slower power degradation rates or higher damage thresholds in SML QD SESAMs.
In this work, we employ thermoreflectance thermal imaging to directly measure the steady-state two-dimensional (2D) temperature field generated by nanostructured heat sources deposited on silicon substrate with different geometrical configurations and characteristic sizes down to 400nm. The analysis of the results using Fourier’s law not only breaks down as size scales down, but it also fails to capture the impact of the geometry of the heat source. The substrate effective Fourier thermal conductivities fitted to wire-shaped and circular-shaped structures with identical characteristic lengths are found to display up to 40% mismatch. Remarkably, a hydrodynamic heat transport model reproduces the observed temperature fields for all device sizes and shapes using just intrinsic Si parameters, i.e., a geometry and size-independent thermal conductivity and nonlocal length scale. The hydrodynamic model provides insight into the observed thermal response and of the contradictory Fourier predictions. We discuss the substantial Silicon hydrodynamic behavior at room temperature and contrast it to InGaAs, which shows less hydrodynamic effects due to dominant phonon-impurity scattering.
In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.
This work is the first report describing how the concentrations of silicon and boron govern the cryogenic scintillation properties of n-type GaAs. It shows that valence band holes are promptly trapped on radiative centers and then combine radiatively with silicon donor band electrons at rates that increase with the density of free carriers. It also presents the range of silicon and boron concentrations needed for efficient light emission under X-ray excitation, which along with its low band gap and apparent absence of afterglow, make scintillating GaAs suitable for the detection of rare, low-energy electronic excitations from interacting dark matter particles. A total of 29 samples from four different suppliers were studied. Luminosities and timing responses were measured for the four principal emission bands centered at 860, 930, 1070, and 1335 nm, and for the total emissions. Excitation pulses of 40 kVp X-rays were provided by a light-excited X-ray tube driven by an ultra-fast laser. Scintillation emissions from 800 to 1350 nm were measured using an InGaAs photomultiplier. Within the concentration ranges of free carriers from 2 x 10 16 /cm 3 to 6 x 10 17 /cm 3 and boron from 1.5 × 10 18 /cm 3 to 6 x 10 18 /cm 3 , nine samples have luminosities > 70 photons/keV and two have luminosities > 110 photons/keV. Other samples in that range have lower luminosities due to higher concentrations of non-radiative centers. The decay times decrease by typically a factor of ten with increasing free carrier concentrations from 10 17 /cm 3 to 2 x 10 18 /cm 3 .
Here we perform quantitative analysis of the X-ray absorption data taken in situ during the earliest cycles of the ZnO atomic layer deposition on atomically flat InGaAs (001) surfaces. As deposition progresses, we observe a transition from an amorphous structure to a nanocrystalline one. The former retains much of the characteristics of a ZnO crystal in the Zn coordination shell, while the latter shows atomic ordering up to at least the third neighbor shell of Zn atoms, despite the absence of Bragg X-ray diffraction peaks. We show that the different chemical preparation of the substrate surface affects the ZnO local structure and that, counterintuitively, a stronger short-range order is obtained in the nanostructures characterized by lower local order at the interface. We propose a model that accounts for these findings.
This work demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a III-V InGaAs-based epitaxial material stack and LiNbO 3 . We compare amplification of Raleigh-SAW and leaky-SAW modes on a on Y-cut, X-propagating delay line amplifier. Due to the superior properties of the materials employed, we observe a net terminal gain of 3dB for an LSAW overtone mode This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.
Here, the Quad transimpedance and limiting amplifier (QTIA) is a 4-channel array optical receiver ASIC, developed using a 65 nm CMOS process. It is configurable between the bit rate of 2.56 Gbps and 10 Gbps per channel. QTIA offers careful matching to both GaAs and InGaAs photodiodes. At this R&D stage, each channel has a different biasing scheme to the photodiode for optimal coupling. A charge pump is implemented in one channel to provide a higher reverse bias voltage, which is especially important to mitigate radiation effects on the photodiodes. The circuit functions of QTIA successfully passed the lab tests with GaAs photodiodes.
Self-assembled quantum dots (QDs) embedded in InGaAs quantum wells (QWs) are used as active regions for photonic-crystal surface-emitting lasers (PCSELs). An epitaxial regrowth method is developed to fabricate the dot-in-well (DWELL) PCSELs. Here, the epitaxial regrowth starts with the growth of a partial laser structure containing bottom cladding, waveguide, active region, and the photonic crystal (PC) layer. The PC layer is patterned to realize the cavity. Subsequently a top cladding layer is regrown to complete the laser structure. During the regrowth of the top cladding layer, the partial laser structure is subjected to high growth temperatures in excess of 600 °C resulting in an unintentional annealing of the active region. This annealing of the active region can alter the QDs by changing their size resulting in a blue shift in photoluminescence (PL) and narrowing PL emission. This effect results in the misaligning of the gain peak and the cavity resonance, resulting in sub-optimal lasing performance. DWELL active regions are known to have better thermal stability compared to both QDs and QWs and could be an ideal candidate for regrown PCSELs. We successfully demonstrate an optically-pumped epitaxially-regrown DWELL PCSEL with an emission wavelength of 1230 nm operating at room temperature. Furthermore, the DWELL active region shows excellent emission wavelength stability and intensity despite the high temperature regrowth process.
Accurate measurements of six-junction inverted metamorphic concentrator solar cells under AM1.5 direct spectrum are obtained by adjusting the spectrum of a tunable high-intensity solar simulator with custom mirrors. Isotype reference cells and broadband InGaAs QE calibration cells were developed for accurate measurements. Modeling and varying the illumination show that an unavoidable 15% - 17% overillumination on the sixth junction does not result in significant error of these 6J IMM devices. Spectrally adjusted flash measurements are independently confirmed by NREL's Cell and Module Performance team. Concentration measurements of a 6J IMM solar cell resulted in 47.1 ± 3.2% (absolute) efficiency at 143 suns.