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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2001

Radiation Effects on DC-DC Converters

In this work, several DC-DC converters were designed and built. The converters are Buck Buck-Boost, Cuk, Flyback, and full-bridge zero-voltage switched. The total ionizing dose radiation and single event effects on the converters were investigated. The experimental results for the TID effects tests show that the voltages of the Buck Buck-Boost, Cuk, and Flyback converters increase as total dose increased when using power MOSFET IRF250 as a switching transistor. The change in output voltage with total dose is highest for the Buck converter and the lowest for Flyback converter. The trend of increase in output voltages with total dose in the present work agrees with those of the literature. The trends of the experimental results also agree with those obtained from PSPICE simulation. For the full-bridge zero-voltage switch converter, it was observed that the dc-dc converter with IRF250 power MOSFET did not show a significant change of output voltage with total dose. In addition, for the dc-dc converter with FSF254R4 radiation-hardened power MOSFET, the output voltage did not change significantly with total dose. The experimental results were confirmed by PSPICE simulation that showed that FB-ZVS converter with IRF250 power MOSFET's was not affected with the increase in total ionizing dose. Single Event Effects (SEE) radiation tests were performed on FB-ZVS converters. It was observed that the FB-ZVS converter with the IRF250 power MOSFET, when the device was irradiated with Krypton ion with ion-energy of 150 MeV and LET of 41.3 MeV-square cm/mg, the output voltage increased with the increase in fluence. However, for Krypton with ion-energy of 600 MeV and LET of 33.65 MeV-square cm/mg, and two out of four transistors of the converter were permanently damaged. The dc-dc converter with FSF254R4 radiation hardened power MOSFET's did not show significant change at the output voltage with fluence while being irradiated by Krypton with ion energy of 1.20 GeV and LET of 25.97 MeV-square cm/mg. This might be due to fact that the device is radiation hardened.

Zhang, De-Xin↗
NASA NTRS1995

Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

Radiation Hardness↗
NASA NTRS2015

Compendium of Current Single Event Effects for Candidate Spacecraft Electronics for NASA

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

spacecraft electronics↗
NASA NTRS2002

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Asbok K.↗
NASA NTRS2000

Evaluation of Data Retention and Imprint Characteristics of FRAMs Under Environmental Stresses for NASA Applications

A major reliability issue for all advanced nonvolatile memory (NVM) technology devices including FRAMs (Ferroelectric random access memories) is the data retention characteristics over extended period of time, under environmental stresses and exposure to total ionizing dose (TID) radiation effects. For this testing, 256 Kb FRAMs in 28-pin plastic DIPS, rated for industrial grade temperature range of -40 C to +85 C, were procured. These are two-transistor, two-capacitor (2T-2C) design FRAMs. In addition to data retention characteristics, the parts were also evaluated for imprint failures, which are defined as the failure of cells to change from a "preferred" state, where it has been for a significant period of time to an opposite state (e.g., from 1 to 0, or 0 to 1). These 256 K FRAMs were subjected to scanning acoustic microscopy (C-SAM); 1,000 temperature cycles from -65 C to +150 C; high temperature aging at 150 C, 175 C, and 200 C for 1,000 hours; highly accelerated stress test (HAST) for 500 hours; 1,000 hours of operational life test at 125 C; and total ionizing dose radiation testing. As a preconditioning, 10 K read/write cycles were performed on all devices. Interim electrical measurements were performed throughout this characterization, including special imprint testing and final electrical testing. Some failures were observed during high temperature aging test at 200 C, during HAST testing, and during 1,000 hours of operational life at 125 C. The parts passed 10 Krad exposure, but began showing power supply current increases during the dose increment from 10 Krad to 30 Krad, and at 40 Krad severe data retention and parametric failures were observed. Failures from various environmental group testing are currently being analyzed.

Sharma, Ashok K.↗
NASA NTRSDate not supplied

Shielding Considerations for CubeSat Structures During Solar Maximum

The purpose of this lessons learned is to communicate the utility of shielding in small spacecraft planning for the support of mission assurance and reliability. Numerous SmallSats have been flying in polar low earth orbit for scientific, communications, technology demonstrations, and imaging with academic, commercial, and government interests. Shielding has been part of mission assurance and reliability from the advent of long duration spacecraft missions. The Shields-1 CubeSat has been operating in polar low earth orbit since 16 December 2018 with atomic number (Z)-grade radiation shielding and demonstrates shielding effectiveness. Shields-1 has collected a representative example of solar minimum data in 2019 with 8 Teledyne dosimeters over varying shielding effectiveness. It serves as current experimental data and has been compared with NOVICE Shielding estimates using the AP8 –AE8 trapped radiation model with the Shields-1 CAD and generic CubeSat 3 unit (U) models. Using NOVICE model radiation analysis coding, the shielding effectiveness's, based on a generic CubeSat 3U structure with 4 electronic boards, were estimated for aluminum wall thicknesses ranging from 0.204 cmto4.44 cm (0.550 g/cm2–12.0 g/cm2) thick aluminum. For modeled polar orbiting spacecraft, solar maximum total ionizing dose (TID)increases by nearly a magnitude for thin-walled aluminum 0.550g/cm2-0.686 g/cm2(0.204 cm –0.254 cm) typical CubeSat structures. The shielding effectiveness by NOVICE Sigma estimates, which is a shielding sphere approximation around a detector, showed a linear relationship with wall thickness, which increased over the wall thickness by a ratio of 1.43 determined by linear regression analysis. Using NOVICE Adjoint Monte-Carlo Modeling of solar minimum and solar maximum with the inclusion of a worst-case solar particle event over a one year mission without geomagnetic shielding, the TID for minimum and maximum conditions for a generic 3U with a wall thickness of 0.254 cm is 158 RAD and 1540 RAD, respectively. The modeled total solar maximum TID is over estimated, because at low orbital latitudes a spacecraft will have shielding from Earth's magnetic field. However, TID will still be significant at high latitudes over the poles, where a spacecraft is exposed in a solar particle event. In contrast, to a thin walled generic 3U CubeSat, Shields-1 electronics enclosure has a shielding effectiveness of 21.3 g/cm2from NOVICE Sigma modeling and is expected to show reduced total ionizing dose increases during the present active Solar Cycle 25 period. Because solar particle events during solar maximum increase TID on electronic parts with thin-walled shielding in short periods of time, it is a mission assurance and reliability consideration on the spacecraft’s mission value versus adding shielding for risk reduction of premature spacecraft or instrument payload loss. Since the volumes of many instruments and system electronics have reduced with small spacecraft, shielding material costs and weight penalties have diminished. A small spacecraft project budget and schedule may limit traditional radiation-hardened part use and radiation testing requirements, where shielding can contribute to mission assurance and reliability with reduced costs.

Shields-1↗
NASA NTRSDate not supplied

Shielding Considerations for CubeSat Structures During Solar Maximum

The purpose of this lessons learned paper is to communicate the utility of shielding in small spacecraft planning for the support of mission assurance and reliability. Numerous SmallSats have been flying in polar low Earth orbit for science, communications, technology demonstrations, and imaging with academic, commercial, and government interests. Shielding has been part of mission assurance and reliability from the advent of long duration spacecraft missions. The Shields-1 CubeSat has been operating in polar low Earth orbit since 16 December 2018 with atomic number (Z)-grade radiation shielding and demonstrates shielding effectiveness. Shields-1 has collected a representative example of solar minimum data in 2019 with eight Teledyne µDosimeters over varying shielding effectivenesses. It serves as current experimental data and has been compared with NOVICE Shielding estimates using the AP8 – AE8 trapped radiation model with the Shields-1 CAD and generic CubeSat three unit (3U) models. Using NOVICE model radiation analysis coding, the shielding effectivenesses, based on a generic CubeSat 3U structure with four electronic boards, were estimated for aluminum wall thicknesses ranging from 0.204 cm to 4.44 cm (0.550 g/cm 2 to 12.0 g/cm 2 ). For modeled polar orbiting spacecraft, solar maximum total ionizing dose (TID) increases by nearly a magnitude for thin-walled aluminum 0.550-g/cm 2 - 0.686-g/cm 2 (0.204-cm – 0.254-cm) typical CubeSat structures. The shielding effectiveness estimated by NOVICE Sigma, which is a shielding sphere approximation around a detector, showed a linear relationship with wall thickness, which increased over the wall thickness by a ratio of 1.43 determined by linear regression analysis. Using NOVICE Adjoint Monte-Carlo Modeling of solar minimum and solar maximum with the inclusion of a worst-case solar particle event over a one-year mission without geomagnetic shielding, the TID for minimum and maximum conditions for a generic 3U with a wall thickness of 0.254 cm is 158 RAD and 1540 RAD, respectively. The modeled total solar maximum TID is over estimated, because at low orbital latitudes a spacecraft will have shielding from the Earth’s magnetic field. However, TID will still be significant at high latitudes over the poles, where a spacecraft is exposed in a solar particle event. In contrast to a thin-walled generic 3U CubeSat, the Shields-1 electronics enclosure has a shielding effectiveness of 21.3 g/cm 2 from NOVICE Sigma modeling and is expected to show reduced total ionizing dose increases during the present active Solar Cycle 25 period. Because solar particle events during solar maximum increase TID on electronic parts with thin-walled shielding in short periods of time, it is a mission assurance and reliability consideration on the mission value of the spacecraft versus adding shielding for risk reduction of premature spacecraft or instrument payload loss. Since the volumes of many instruments and system electronics have reduced with small spacecraft, shielding material costs and weight penalties have diminished. A small spacecraft project budget and schedule may limit traditional radiation-hardened part use and radiation testing requirements, where shielding can contribute to mission assurance and reliability with reduced costs.

Shields-1↗
NASA NTRS2003

Radiation tolerant back biased CMOS VLSI

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

Maki, Gary K.↗
NASA NTRS2013

Estimating the Effects of Astronaut Career Ionizing Radiation Dose Limits on Manned Interplanetary Flight Programs

Space radiation effects mitigation has been identified as one of the highest priority technology development areas for human space flight in the NASA Strategic Space Technology Investment Plan (Dec. 2012). In this paper we review the special features of space radiation that lead to severe constraints on long-term (more than 180 days) human flight operations outside Earth's magnetosphere. We then quantify the impacts of human space radiation dose limits on spacecraft engineering design and development, flight program architecture, as well as flight program schedule and cost. A new Deep Space Habitat (DSH) concept, the hybrid inflatable habitat, is presented and shown to enable a flexible, affordable approach to long term manned interplanetary flight today.

Koontz, Steven L.↗
NASA NTRS2013

Estimating the Effects of Astronaut Career Ionizing Radiation Dose Limits on Manned Interplanetary Flight Programs

The Hybrid Inflatable DSH combined with electric propulsion and high power solar-electric power systems offer a near TRL-now solution to the space radiation crew dose problem that is an inevitable aspect of long term manned interplanetary flight. Spreading program development and launch costs over several years can lead to a spending plan that fits with NASA's current and future budgetary limitations, enabling early manned interplanetary operations with space radiation dose control, in the near future while biomedical research, nuclear electric propulsion and active shielding research and development proceed in parallel. Furthermore, future work should encompass laboratory validation of HZETRN calculations, as previous laboratory investigations have not considered large shielding thicknesses and the calculations presented at these thicknesses are currently performed via extrapolation.

Koontz, Steven L.↗
NASA NTRS2014

Computation of Cosmic Ray Ionization and Dose at Mars: a Comparison of HZETRN and Planetocosmics for Proton and Alpha Particles

The ability to evaluate the cosmic ray environment at Mars is of interest for future manned exploration. To support exploration, tools must be developed to accurately access the radiation environment in both free space and on planetary surfaces. The primary tool NASA uses to quantify radiation exposure behind shielding materials is the space radiation transport code, HZETRN. In order to build confidence in HZETRN, code benchmarking against Monte Carlo radiation transport codes is often used. This work compares the dose calculations at Mars by HZETRN and the Geant4 application Planetocosmics. The dose at ground and the energy deposited in the atmosphere by galactic cosmic ray protons and alpha particles has been calculated for the Curiosity landing conditions. In addition, this work has considered Solar Energetic Particle events, allowing for the comparison of varying input radiation environments. The results for protons and alpha particles show very good agreement between HZETRN and Planetocosmics.

Gronoff, Guillaume↗
NASA NTRSDate not supplied

Radiation Effects Considerations for Instrumentation and Control in Space Nuclear Systems

Radiation effects in electrical, electronic, electro-motive, and electro-optical (EEEE) hardware encompass a complex variety of interactions, processes, environments, and an evolving landscape of relevant hardware. Appropriately mitigating the effects of radiation in sensors, data acquisition, and control hardware is among the most significant challenges associated with deploying space nuclear power and propulsion systems. The expertise within EEEE radiation effects disciplines require working knowledge that is at least as complex and diverse as the problem itself, but that should not dissuade stakeholders and engineers in adjacent disciplines from attempting to understand the general principles associated with the problem at hand. This brief overview seeks to bring to the foreground a set of relevant topics that are of special importance for space nuclear propulsion applications that involve high rates of neutron and gamma radiation. The unique set of environments and design requirements for space nuclear systems mean that the experience and utility for methods applied to typical spaceflight hardware or terrestrial nuclear systems must not be applied naively. Forward consideration on the applicability of testing methods applied to either existing or bespoke hardware is likely to drive early decisions on system-wide radiation effects mitigation strategies, and will influence procurement requirements for providers of radiation tolerant hardware who are unlikely to have experience in this unique set of environments. Radiation hardness assurance (RHA) guidance should be adapted and emphasize the importance of hardware testing in the relevant environment. These must consider the combined effects of temperature, total ionizing dose (TID), non-ionizing/displacement damage (TNID/DD), and single event effects (SEE), and should consider the impacts of flux (rate) in addition to cumulative effects.

Radiation↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers

Microelectronic and photonic systems in the natural space environment are bombarded by a variety of charged particles including electrons, trapped protons, cosmic rays, and solar particles (protons and other heavy ions). These incident particles cause both ionizing and non-ionizing effects when traversing a device, and the effects can be either transient or permanent. The vast majority of the kinetic energy of an incident proton is lost to ionization, creating the single event effects (SEES) and total ionizing dose (TID) effects. However, the small portion of energy lost in non-ionizing processes causes atoms to be removed from their lattice sites and form permanent electrically active defects in semiconductor materials. These defects, i.e., "displacement damage," can significantly degrade device performance. In general, most of the displacement damage effects in the natural space environment can be attributed to protons since they are plentiful and extremely energetic (and therefore not readily shielded against). For this reason, we consider only proton induced displacement damage in this course. (Nevertheless, we identify solar cells as an important example of a case where both electron and proton damage can be important since only very light shielding is feasible.) The interested reader is encouraged to explore the three previous NSREC and RADECS short courses which also treat displacement damage issues for satellite applications. Part A of this segment of the short course introduces the space environment, proton shielding issues, and requirements specifications for proton-rich environments. In order to exercise the displacement damage analysis tools for on-orbit performance predictions, the requirements document must provide the relevant proton spectra in addition to the usual total ionizing dose-depth curves. Ion-solid interactions and the nature of the displacement damage they generate have been studied extensively for over half a century, yet they still remain a subject of investigation. In this section, a description of the mechanisms by which displacement damage is produced will be followed by a summary of the major consequences for device performance in a space environment. Often the degradation of a device parameter can be characterized by a damage factor (measured in a laboratory using monoenergetic protons) that is simply the change in a particular electrical or optical parameter per unit proton fluence. In addition, we will describe the concept of a non-ionizing energy loss rate (NIEL) which quantifies that portion of the energy lost by an incident ion that goes into displacements. It has been calculated as a function of proton energy, and is analogous to (and has the same units as) the linear energy transfer (LET) for ionizing energy. We will discover that, to first order, the calculated NIEL describes the energy dependence of the measured device damage factors. This observation provides the basis for predicting proton induced device degradation in a space environment based on both the calculated NIEL and relatively few laboratory test measurements. The methodology of such on-orbit device performance predictions will be described, as well as the limitations. Several classes of devices for which displacement damage is a significant (if not the dominant) mode of radiation induced degradation will be presented.

Marshall, Cheryl J.↗
NASA NTRS2000

A Compendium of Recent Optocoupler Radiation Test Data

We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

Label, K. A.↗