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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7

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DOE OSTI2018

Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy

Electric field (E–field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy–efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin–reorientation transition (SRT) that allows the magnetic moment rotating between the out–of–plane and the in–plane direction is thereby crucial. In this work, a remarkable magnetic anisotropy field change up to 1572 Oe is achieved under a small operation voltage of 4 V through ionic liquid (IL) gating control of SRT in Au/[DEME]+[TFSI] – /Pt/(Co/Pt) 2 /Ta capacitor heterostructures at room temperature, corresponding to a large ME coefficient of 378 Oe V –1 . As revealed by both ferromagnetic resonance measurements and magnetic domain evolution observation, the magnetization can be switched stably and reversibly between the out–of–plane and in–plane directions via IL gating. The key mechanism, revealed by the first–principles calculation, is that the IL gating process influences the interfacial spin–orbital coupling as well as net Rashba magnetic field between the Co and Pt layers, resulting in the modulation of the SRT and in–plane/out–of–plane magnetization switching. In conclusion, this work demonstrates a unique IL–gated PMA with large ME tunability and paves a way toward IL gating spintronic/electronic devices such as voltage tunable PMA memories.

36 MATERIALS SCIENCE↗

NASA NTRS1967

Simplified technique demonstrates magnetic domain switching

Light from a conventional photographic light source is polarized and projected through thin samples of gadolinium iron garnet and then observed with a conventional polarizing microscope. A distinctive change in color from red to yellow is observed as the magnetic domains are switched.

Source record↗

DOE OSTI2015

Study of resistive switching and magnetism modulation in the Pt/CoFe{sub 2}O{sub 4}/Nb:SrTiO{sub 3} heterostructures

CoFe{sub 2}O{sub 4} (CFO) thin films are epitaxially grown on Nb doped (001) SrTiO{sub 3} (NSTO) single-crystal substrates by pulsed laser deposition to form Pt/CFO/NSTO heterostructures. These heterostructures exhibit typical bipolar resistive switching effect with maximum switching ratio of 5 × 10{sup 4}, multi-level resistance states, excellent retention, and anti-fatigue properties. When the resistance states of the heterostructures are switched between low resistance state and high resistance state upon applying bias voltages, the saturation magnetization of the CFO films shows corresponding changes associated with the resistive switching. These close correlations between the resistive switching and the magnetization can be attributed to the electrons filling into and releasing from the defect energy levels introduced by oxygen vacancies in the CFO film. These results show potential application in the multi-functional magnetoelectric sensor and non-volatile multi-level resistive switching memory.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Pressure sensor

Disclosed is a passive, in-situ pressure sensor. The sensor includes a sensing element having a ferromagnetic metal and a tension inducing mechanism coupled to the ferromagnetic metal. The tension inducing mechanism is operable to change a tensile stress upon the ferromagnetic metal based on a change in pressure in the sensing element. Changes in pressure are detected based on changes in the magnetic switching characteristics of the ferromagnetic metal when subjected to an alternating magnetic field caused by the change in the tensile stress. The sensing element is embeddable in a closed system for detecting pressure changes without the need for any penetrations of the system for power or data acquisition by detecting changes in the magnetic switching characteristics of the ferromagnetic metal caused by the tensile stress.

47 OTHER INSTRUMENTATION↗

DOE OSTI2018

Sensor and methods of detecting target materials and situations in closed systems

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

Switching of Magnetic Order via Non‐Magnetic Al Addition in FeCoNiMnAl x Films

Magnetic high entropy alloys (HEAs) consisting of 3 d transition metals offer an exciting platform to explore novel magnetic phases as they often house competing exchange interactions in combination with random site disorders. In this work, a sensitive and tunable magnetic order is demonstrated in sputtered single-layer FeCoNiMnAl x films, as a function of non-magnetic Al addition, along with an unexpected exchange bias effect. Thin films of 50 nm FeCoNiMn exhibit a face-centered-cubic ( fcc ) phase, reentrant spin glass (SG) transition near 100 K, and a large exchange bias of over 500 Oe after field-cooling to 5 K. The exchange bias is increased to 930 Oe through a small addition of 5 at.% Al. Further Al addition to 12 at.% results in a body-centered-cubic ( bcc ) phase, coinciding with a large increase in the saturation magnetization, decrease of exchange bias to 50 Oe, and suppression of SG behavior. The change in magnetic order across the Al-induced structural transformation is mediated by the switching of Mn ground state from AF to FM, which is supported by first-principles calculations and experimentally confirmed via X-ray magnetic circular dichroism. These results open up new HEA strategies for explorations of novel magnetic phases.

competing exchange interactions↗

DOE OSTI2026

Dynamic control of quantum phases in two-dimensional materials via Floquet engineering

The dynamical engineering of quantum states through periodic optical driving, known as Floquet engineering, has emerged as a powerful frontier in condensed matter physics, offering a pathway to realize material properties inaccessible in static equilibrium. This review provides a comprehensive overview of recent theoretical and experimental advances in the optical manipulation of two-dimensional (2D) quantum materials. We begin by systematically reviewing the evolution of the field from its pioneering applications in graphene and twisted moiré superlattices, highlighting the experimental realization of the light-induced anomalous Hall effect (AHE) to the complex spin-valley physics in transition metal dichalcogenides (TMDs). Furthermore, we briefly examine recent advances in 2D magnetic materials, demonstrating how optical driving can actively compete with intrinsic magnetism to dynamically switch magnetic orders and topological invariants. Moreover, we discuss the emerging frontiers of multi-frequency driving, quantum optimal control theory (QOCT), and ultrafast lightwave electronics. We highlight how tailored waveforms, such as bicircular light fields, and sub-cycle attosecond control can selectively break spatial symmetries to generate novel nonlinear photocurrents, mitigate dissipation, and extend the boundaries of quantum control well beyond the perturbative steady-state regime. Finally, we summarize the key experimental challenges for Floquet engineering, including effects such as heating and scattering, which limit coherent quantum control.

Wang, Wenpeng [Northeastern University, Shenyang, ↗

DOE OSTI2015

Non-volatile polarization switch of magnetic domain wall velocity

Controlled propagation speed of individual magnetic domains in metal channels at the room temperature is obtained via the non-volatile field effect associated with the switchable polarization of P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) ferroelectric polymer. Polarization domains directly written using conducting atomic force microscope probe locally accelerate/decelerate the magnetic domains in the 0.6 nm thick Co film. The change of the magnetic domain wall velocity is consistent with the magnetic anisotropy energy modulation through the polarization upward/downward orientation. Excellent retention is observed. The demonstrated local non-destructive and reversible change of magnetic properties via rewritable patterning of ferroelectric domains could be attractive for exploring the ultimate limit of miniaturization in devices based on ferromagnetic/ferroelectric bilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2017

The FFAG return loop for the CBETA Energy Recovery Linac

The CBETA energy recovery linac uses a single xed eld alternating gradient (FFAG) beam line to return the beam for electron beams with four energies, ranging from 42 MeV to 150 MeV. To keep the beam line compact, the ends of the return line have a small radius of curvature, but the central part of the return line is straight. These are connected by transition lines that adiabatically change from one to the other. We rst describe the design or the arc cell. We then describe how a straight cell is created to be a good match to this arc cell. We then describe the design of the transition line between them. The design process makes use of eld maps for the desired magnets. Because we switch magnet types as we move from the arc, through the transition, and into the straight, there are discrete jumps in the elds that degrade the adiabaticity of the transition, and we describe corrections to manage that.

43 PARTICLE ACCELERATORS↗

DOE OSTI2014

Electric field controlled reversible magnetic anisotropy switching studied by spin rectification

In this letter, spin rectification was used to study the electric field controlled dynamic magnetic properties of the multiferroic composite which is a Co stripe with induced in-plane anisotropy deposited onto a Pb(Mg{sub 1∕3}Nb{sub 2∕3})O{sub 3}-PbTiO{sub 3} substrate. Due to the coupling between piezoelectric and magnetoelastic effects, a reversible in-plane anisotropy switching has been realized by varying the history of the applied electric field. This merit results from the electric hysteresis of the polarization in the nonlinear piezoelectric regime, which has been proved by a butterfly type electric field dependence of the in-plane anisotropy field. Moreover, the electric field dependent effective demagnetization field and linewidth have been observed at the same time.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Spin-transfer torque and specific features of magnetic-state switching in vacuum tunnel nanostructures

The specific features of spin-transfer torque in vacuum tunnel structures with magnetic electrodes are investigated using the quasi-classical Sommerfeld model of electron conductivity, which takes into account the exchange splitting of the spin energy subbands of free electrons. Using the calculated voltage dependences of the transferred torques for a tunnel structure with cobalt electrodes and noncollinear magnetic moments in the electrodes, diagrams of stable spin states on the current–field parameter plane in the in-plane geometry of the initial magnetization are obtained.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Nonadiabatic Hydrogen Dissociation on Copper Nanoclusters

Copper surfaces display high catalytic selectivity but have poor hydrogen dissociation kinetics; therefore, we consider icosahedral Cu 13 nanoclusters to understand how nanoscale structure might improve catalytic prospects. We find that the spin state is a surprisingly important design consideration. Cu 13 clusters have large magnetic moments due to finite size and symmetry effects and exhibit magnetization-dependent catalytic behavior. The most favorable transition state for hydrogen dissociation has a lower activation energy than that on single-crystal copper surfaces but requires a magnetization switch from 5 to 3 μ B . Without this switch, the activation energy is higher than that on single-crystal surfaces. Weak spin–orbit coupling hinders this switch, decreasing the kinetic rate of hydrogen dissociation by a factor of 16. Here, we consider strategies to facilitate magnetization switches through optical excitations, substitution, charge states, and co-catalysts; these considerations demonstrate how control of magnetic properties could improve catalytic performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2014

Low-current-density spin-transfer switching in Gd{sub 22}Fe{sub 78}-MgO magnetic tunnel junction

Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 10{sup 6} A/cm{sup 2} using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm{sup 2} in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1977

Magnetic rotary switch

Innovation uses solid-state Hall-effect sensor to turn electrical circuit on or off. Though normally held off by a small bias magnet, Hall device turns on when strong actuating magnet comes into proximity. Drive magnet moves actuating magnet against restraint of detent magnet.

Sarkinen, J. K.↗

DOE OSTI2017

Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions

Magnetic interlayer coupling is one of the central phenomena in spintronics. It has been predicted that the sign of interlayer coupling can be manipulated by electric fields, instead of electric currents, thereby offering a promising low energy magnetization switching mechanism. Here we present the experimental demonstration of voltage-controlled interlayer coupling in a new perpendicular magnetic tunnel junction system with a GdO x tunnel barrier, where a large perpendicular magnetic anisotropy and a sizable tunnelling magnetoresistance have been achieved at room temperature. Owing to the interfacial nature of the magnetism, the ability to move oxygen vacancies within the barrier, and a large proximity-induced magnetization of GdO x , both the magnitude and the sign of the interlayer coupling in these junctions can be directly controlled by voltage. Lastly, these results pave a new path towards achieving energy-efficient magnetization switching by controlling interlayer coupling.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Switching between Magnetic Bloch and Néel Domain Walls with Anisotropy Modulations

It has been shown previously that the presence of a Dzyaloshinskii-Moriya interaction in perpendicularly magnetized thin films stabilizes N\'eel type domain walls. We demonstrate, using micromagnetic simulations and analytical modeling, that the presence of a uniaxial in-plane magnetic anisotropy can also lead to the formation of N\'eel walls in the absence of a Dzyaloshinskii-Moriya interaction. It is possible to abruptly switch between Bloch and N\'eel walls via a small modulation of both the in-plane, but also the perpendicular magnetic anisotropy. This opens up a route towards electric field control of the domain wall type with small applied voltages through electric field controlled anisotropies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2026

Imaging of a van der Waals spin-orbit torque system using spin ensembles in hBN

Recently, optically active spin defects embedded in two-dimensional (2D) van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science. Taking advantage of excellent solid-state integrability, this new class of spin defects can be readily arranged in nanoscale proximity to target materials, showing great promise for realizing in-situ quantum sensing of microscopic spin and charge behaviors in vdW heterostructures. Here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching and electric current distributions in an all-vdW spin-orbit torque (SOT) system. By visualizing variations of nanoscale magnetic stray field profile of room-temperature 2D magnet Fe 3 GaTe 2 under different SOT conditions, we show how the magnetic switching evolves from deterministic to stochastic behavior due to the interplay between spin orientations, anisotropy and Joule heating. Micromagnetic simulations rationalize our results well, revealing the role of field-like SOT in inhibiting thermal fluctuation driven stochastic switching and chaotic multi-domain competition. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights into material design, testing, and performance evaluation of next-generation vdW spintronic devices.

Imaging techniques↗