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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Formation of Cu{sub 2}O and ZnO Crystal Layers by Magnetron Assisted Sputtering and Their Optical Characterization

Copper (I) oxide and zinc oxide films are formed on silicon and glassy quartz substrates by magnetron assisted sputtering. The thickness of the films is tens and hundreds of nanometers. The films are grown at different substrate temperatures and different oxygen pressures in the working chamber. The film samples are studied by the X-ray diffraction technique, scanning electron microscopy, and optical methods. It is established that an increase in the substrate temperature yields a change in the surface morphology of copper (I) oxide films towards the formation of well-pronounced crystallites. The reflectance and Raman spectra suggest that the quality of such films is close to that of bulk Cu{sub 2}O crystals produced by the oxidation of copper. As concerns ZnO films, an increase in the substrate temperature and an increase in the partial oxygen pressure make it possible to produce films, for which a sharp exciton structure is observed in the reflectance spectra and the emission of excitons bound at donors is observed in the luminescence spectra.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering

The emission spectra of structures based on ZnO films deposited by high-frequency magnetron sputtering are studied. Clearly pronounced emission lines associated with the recombination of free (λ = 363 nm) and bound excitons (λ = 377, 390, 410 nm) are observed in the PL (photoluminescence) spectra (T = 300 K) of n-ZnO/p-GaN:Mg structures, and no substantial emission is observed in the impurity PL region λ = 450–600 nm. Only emission lines characteristic of n-ZnO (λ = 374 nm) are observed in the EL (electroluminescence) spectra of n-ZnO/p-ZnO structures (T = 300 K).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se{sub 2} Films Deposited by Magnetron-Assisted Sputtering

The stimulated emission of Cu(In,Ga)Se{sub 2} alloy thin films formed by magnetron-assisted sputtering onto a sodium-fluoride layer deposited onto a molybdenum layer on a glass substrate is observed. The structural and optical parameters of the films are determined by scanning electron microscopy, local X-ray spectral microanalysis, X-ray structural analysis, and low-temperature luminescence (T = 10 K) measurements in the range of excitation levels of 1.6–75 kW cm{sup –2} provided by nanosecond nitrogen-laser pulses. The stimulated emission threshold corresponds to ~25 kW cm{sup –2}. Comparative analysis of the emission of Cu(In,Ga)Se{sub 2} thin films suggests that the introduction of sodium results in significant improvement of the structural quality, specifically, in a decrease in the density of energy states in the band tails and in a decrease in the concentration of nonradiative-recombination centers.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Effect of the Temperature of Photonic Annealing on the Structural and Optical Properties of ZnO Films Synthesized by Dual Magnetron-Assisted Sputtering

Zinc-oxide films 1.4 μm in thickness are deposited onto glassy substrates by the dual magnetron-assisted sputtering of zinc targets in an argon and oxygen gas atmosphere. The dependences of the structural and optical characteristics of the ZnO films on the temperature of postdeposition photonic annealing are studied. It is established that an increase in the annealing temperature yields an increase in the degree of crystallinity of the films. Electron microscopy shows that the deposited ZnO coatings are columnar in structure and the microstructure density and crystallite size increase upon annealing. It is found that, at an annealing temperature of 450–650°C, the optical transmittance increases to >90% in the spectral range 400–1100 nm. The experimental results show that the temperature of vacuum photonic annealing has the most profound effect on the final properties of ZnO coatings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition

The properties of gallium-oxide films produced by the radio-frequency magnetron-assisted sputtering of a β-Ga{sub 2}O{sub 3} target with deposition onto sapphire substrates are studied. The as-deposited gallium-oxide films are polycrystalline and contain crystallites of the α and β phases. Exposure to oxygen plasma does not bring about the appearance of new crystallites but makes crystallites several times larger in average dimensions in the substrate plane. After annealing at 900°C, the crystallite size becomes twice as large as that in the unannealed film. The films not subjected to thermal annealing exhibit a high resistance at 20°C. In the range of 50–500°C, the conductivity of the samples (G) only slightly depends on temperature (T) and, as T is elevated further, exponentially increases with the activation energy 0.7–1.0 eV. After annealing of the films in argon at 900°C (30 min), the conductivity G starts to sharply increase at T ≈ 350°C. In the dependence of lnG on T {sup –1}, a maximum in the range of 470–520°C and a portion of decreasing conductivity at higher temperatures are observed. The unusual temperature dependence of the conductivity after annealing is attributed to a change in the structure and phase composition of polycrystalline gallium-oxide films and, possibly, to some effects at the surface. The structures produced on insulating substrates are solar blind in the visible wavelength region and sensitive to radiation in the ultraviolet region (222 nm).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering

Zinc Aluminum Oxide thin films were deposited on glass substrates by reactive DC magnetron sputtering method by varying oxygen flow rates from 1 to 4 sccm. Glancing angle X-ray diffraction patterns ofzinc aluminum oxide thin films exhibits (0 0 2) peak with c-plane preferentially oriented parallel to the substrate. The surface morphology and elemental analysis of the films was observed by field emission scanning electron microscopy attached with energy dispersive X-ray analysis spectroscopy. An average optical transmittance of 83–90% is obtained for the films deposited at various oxygen flow rates. The optical band gap of the films increases from 3.41 to 3.53 eV with the increase of oxygen flow rate due to Burstein–Moss effect. The optical dispersion parameters such as dispersion energy (E{sub d}), oscillator energy (E{sub o}) and static refractive index (n{sub o}) were determined using the Wemple-DiDomenico (W-D) single oscillator model. The nonlinear optical parameters such as optical susceptibility (χ{sup (1)}), third order nonlinear optical susceptibility (χ{sup (3)}) and nonlinear refractive index (n{sub 2}) were also determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films

The effect of ion-beam processing alternating with magnetron sputtering on the properties of zinc-oxide thin films is investigated. It is shown that ion-beam processing reduces the growth rate, coherent-scattering-region sizes, and the resistivity. The stoichiometric index, band gap, and refractive index increase. The transparency of the films in the weak absorption region remains unchanged.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Dynamics of pulsed magnetron discharge in high-current electron guns

High-speed video filming is applied to investigate low-pressure (argon 0.053–0.133 Pa) pulsed gas discharge dynamics in a planar magnetron built-in the explosive emission cathode of a high-current electron gun. It has been found that, in the beginning, the discharge starts at the side surface of the cathode and then spreads to its face. The stability of the discharge ignition instant at the cathode face as a function of the working pressure of the gas and the cathode design has been studied. It has been found that the pulsed longitudinal magnetic field results in the discharge switching over in the axial direction onto the electron gun collector. A qualitative explanation of the observed discharge behavior has been given.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Cobalt Modification of Thin Rutile Films Magnetron-Sputtered in Vacuum

Using X-ray phase analysis, atomic force microscopy, and secondary ion mass-spectrometry, the phase formation and component distribution in a Co–TiO{sub 2} film system have been investigated during magnetron sputtering of the metal on the oxide and subsequent vacuum annealing. It has been found that cobalt diffuses deep into titanium oxide to form complex oxides CoTi{sub 2}O{sub 5} and CoTiO{sub 3}. A mechanism behind their formation at grain boundaries throughout the thickness of the TiO{sub 2} film is suggested. It assumes the reactive diffusion of cobalt along grain boundaries in the oxide. A quantitative model of reactive interdiffusion in a bilayer polycrystalline metal–oxide film system with limited solubility of components has been developed. The individual diffusion coefficients of cobalt and titanium have been determined in the temperature interval 923–1073 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Influence of Annealing Temperature on the Microstructure and Morphology of TiN Films Synthesized by Dual Magnetron Sputtering

TiN films synthesized on leucosapphire substrates by dual magnetron sputtering have been annealed in vacuum at 600, 700, 800, and 900°C for 2 min. The microstructure and morphology of the films have been studied by X-ray diffraction and scanning electron microscopy at different temperatures. It has been found that annealing changes the microstructure, texture, grain size, and surface roughness of the TiN films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Magnetron-Sputtered Ni-Cr and Ti-Si Layers to Protect Ti-46Al-8Nb (at.%) Substrates Against Gas Absorption

Ni-Cr and Ti-Si layers were deposited by magnetron sputtering on Ti-46Al-8Nb (at.%) substrates to suppress penetration of gases, which brings about undesirable changes in mechanical properties. Alloy samples with and without surface protection were subjected to interrupted oxidation at elevated temperature (700 and 800 °C) for up to 300 h. Selected mechanical properties as well as adhesion of surface layers were examined in the as-received and oxidized state. Analytical techniques used to characterize surfaces and cross sections of the samples included scanning electron microscopy and light microscopy, energy-dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy and x-ray diffraction. Both investigated layers were sufficiently adherent and effective in hindering gas absorption at 700 °C; however, only Ni-Cr showed promising properties for higher-temperature applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Grid-assisted magnetron sputtering deposition of nitrogen graded TiN thin films

Titanium Nitride (TiN) films were obtained using the grid-assisted magnetron sputtering deposition technique on Al substrates in two conditions: under constant and variable nitrogen concentration along the thin solid film thickness. The formation of a film with variable N concentration (herein referred as graded film) was confirmed using energy filtered transmission electron microscopy, X-ray photoelectron spectroscopy and grazing incidence X-ray diffraction. The TiN thin films microstructures were also analysed using scanning and transmission electron microscopies (SEM and TEM). Finally, the viability of synthesizing TiN thin films with variable N concentration is herein proposed as an alternative method for tailoring the properties of such functional coating materials.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Synthesis and characterization of dense Gd 2 Ti 2 O 7 pyrochlore thin films deposited using RF magnetron sputtering

Thin films of phase-pure pyrochlore Gd 2 Ti 2 O 7 have been synthesized by RF magnetron sputtering. The films were prepared from oxide targets in 50% O 2 /Ar atmosphere and deposited on 111 yttria-stabilized zirconia (YSZ) substrates at a temperature of 800 °C. The pyrochlore structure was confirmed via grazing angle X-ray diffraction and selected area electron diffraction (SAED). Transmission electron microscopy (TEM) analysis also showed that the films were dense and of uniform thickness with surface roughness of approximately 8 nm. The total conductivity measured with AC impedance spectroscopy was found to be independent of thickness and comparable in magnitude to that of bulk Gd 2 Ti 2 O 7 . Differences were observed in the Arrhenius behavior between the bulk and thin film samples and are attributed to varying states of order in the crystalline lattice compounded by different levels of background impurities.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Enhanced properties of tungsten films by high-power impulse magnetron sputtering

Tungsten films (750–1200 nm thick) deposited by high-power impulse magnetron sputtering (HiPIMS) under various sputtering gas pressure and substrate bias are investigated for their physical and microstructural characteristics. Compared to films deposited by the traditional direct current (DC) method with the same deposition configuration and similar parameters, HiPIMS materials exhibit higher hardness, a smoother surface, and better adhesion to a substrate. These excellent properties are attributed to the highly uniform grain structures developed during HiPIMS deposition, in contrast to the funnel shaped grains seen in DC sputtered films. Finally, combined with the in-situ stress measurements, we discuss the underlying mechanisms that lead to enhanced properties of HiPIMS tungsten films.

36 MATERIALS SCIENCE↗