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A study was made of run-in and scuffed steel, chrome-plate, and cast-iron surfaces. X-ray and electron diffraction techniques, micro-hardness determinations, and microscopy were used. Surface changes varied and were found to include three classes: chemical reaction, hardening, and crystallite-size alteration. The principal chemical reactions were oxidation and carburization.
Damage produced on surface of metal single crystals during ion bombardment
Transition metal dichalcogenides exhibit remarkable optical properties due to the diverse number of strongly bound excitons, which can be fine-tuned by alloying. Despite a flurry of research activity in characterizing these excitons, a comprehensive and profound understanding of their behavior with temperature is lacking. Here, we report the rich spectrum of excitonic features within bulk van der Waals alloy Mo0.5 W0.5 S2 and Mo0.5 W0.5 Se2 single crystals through temperature-dependent reflectance spectroscopy and first-principles calculations. We observed Rydberg excitons and interlayer excitons in both the single crystals. Notably, we provide the first experimental evidence of highly energetic A' and B' excitons in Mo0.5 W0.5 S2 at room temperature. The strong carrier-phonon scattering significantly broadens the A', B', and interlayer excitons at room temperature in bulk Mo0.5 W0.5 S2 single crystal compared to its selenide. Our findings, supported by density functional theory and Bethe-Salpeter equation calculations, signify the crucial role of carrier-phonon interactions. These results open pathways for next-generation optoelectronic devices and quantum technologies operating at high temperature.
Accurate crystal plasticity models that faithfully capture the behavior of single crystals under a wide range of loading conditions, such as loading direction, strain rate, and temperature, are still lacking. Here we introduce a novel approach in which a crystal plasticity (CP) model is informed directly from and calibrated to large-scale quantum-accurate MD simulations in which single crystal BCC Ta serves as a testbed material. By analyzing our large set of MD simulations several key insights are obtained leading us to modify constitutive assumptions in order to address deficiencies of existing CP models. Importantly, we observe that the standard notion of fixed slip systems – pairs of slip directions and slip planes – is inadequate for describing high-rate plasticity in BCC tantalum at room temperature. Instead, pencil glide defined as dislocation motion in the maximum resolved shear stress planes (MRSSP) of each Burgers vector is fully consistent with our MD simulation data while providing significant simplifications of the constitutive relations. Herein, our resulting new CP model closely matches the behavior of single crystals observed in high-rate MD simulations while being fully consistent with lower rate experimental results.
We present a detailed description of equivalent crystal theory focusing on its application to the study of surface structure. While the emphasis is in the structure of the algorithm and its computational aspects, we also present a comprehensive discussion on the calculation of surface energies of metallic systems with equivalent crystal theory and other approaches. Our results are compared to experiment and other semiempirical as well as first-principles calculations for a variety of fcc and bcc metals.
One of the first theoretically predicted manifestations of strong interactions in many-electron systems was the Wigner crystal, in which electrons crystallize into a regular lattice. The crystal can melt via either thermal or quantum fluctuations. Quantum melting of the Wigner crystal is predicted to produce exotic intermediate phases and quantum magnetism because of the intricate interplay of Coulomb interactions and kinetic energy. However, studying two-dimensional Wigner crystals in the quantum regime has often required a strong magnetic field or a moiré superlattice potential, thus limiting access to the full phase diagram of the interacting electron liquid. Here we report the observation of bilayer Wigner crystals without magnetic fields or moiré potentials in an atomically thin transition metal dichalcogenide heterostructure, which consists of two MoSe 2 monolayers separated by hexagonal boron nitride. We observe optical signatures of robust correlated insulating states at symmetric (1:1) and asymmetric (3:1, 4:1 and 7:1) electron doping of the two MoSe 2 layers at cryogenic temperatures. Here, we attribute these features to bilayer Wigner crystals composed of two interlocked commensurate triangular electron lattices, stabilized by inter-layer interaction. The Wigner crystal phases are remarkably stable, and undergo quantum and thermal melting transitions at electron densities of up to 6 × 10 12 per square centimetre and at temperatures of up to about 40 kelvin. Our results demonstrate that an atomically thin heterostructure is a highly tunable platform for realizing many-body electronic states and probing their liquid–solid and magnetic quantum phase transitions.
Zinc selenide is an excellent matrix material to dope with rare-earth and transition metal to achieve mid-infrared luminescence to develop high power lasers. The luminescence, morphology and refractive index is significantly affected by the doping and defects generated due to size and valency of dopants, concentration, growth process and convection during the growth. The aim of the study is to investigate effect of point and line defects generated due to low doping of iron and chromium on the emission and morphology of the zinc selenide. Luminescence and morphological properties of large iron and chromium doped zinc selenide single crystals were studied to evaluate the effect of extremely low residual impurities and defects associated with the doping process. The emission properties following both short wavelength (i.e., ultraviolet; 350 – 370 nm) excitation and longer wavelength (i.e., near infrared; 850 – 870 nm) excitation were characterized. Luminescence emission bands were identified in both doped crystals. In addition to the primary emission bands, satellite peaks and intra-center transitions were also observed. Due to local population defects associated with the residual impurities (ppm to ppb) in the Fe-ZnSe and Cr-ZnSe crystals, peak emission wavelengths were observed to shift. Raman studies using 266 and 532 – nm excitation revealed different positions of longitudinal and transverse peaks for Fe-ZnSe and Cr-ZnSe crystals, associated with different levels of defects due to the different ion sizes. The emission bands were found to decrease in intensity due to recombination of residual impurity co-dopants and complex defects generated during growth and fabrication. Cryogenic temperature analyses revealed a very clean emission band due to freezing of some of the point and line defects. An emission band observed at 980 nm for both crystals at room temperature as well as cryogenic temperatures indicates a vibronic peak in ZnSe. The scanning electron microscopy (SEM) images of the local morphology support the conclusion that small crystallites in doped crystals are also present.
A new 0D metal halide (TEP)InBr 4 is reported. Structural and electronic properties were studied. The fabricated X-ray detector using a (TEP)InBr 4 single crystal showed a detection sensitivity of 569.85 μC Gy −1 cm −2 atE= 100 V mm −1 .
VO 2 is a highly correlated electron system which has a metal-to-insulator transition (MIT) with a dramatic change of conductivity accompanied by a first-order structural phase transition (SPT) near room temperature. The origin of the MIT is still controversial and there is ongoing debate over whether an SPT induces the MIT and whether the T c can be engineered using artificial parameters. We examined the electrical and local structural properties of Cr- and Co-ion implanted VO 2 (Cr-VO 2 and Co-VO 2 ) films using temperature-dependent resistance and X-ray absorption fine structure (XAFS) measurements at the V K edge. The temperature-dependent electrical resistance measurements of both Cr-VO 2 and Co-VO 2 films showed sharp MIT features. The T c values of the Cr-VO 2 and Co-VO 2 films first decreased and then increased relative to that of pristine VO 2 as the ion flux was increased. The pre-edge peak of the V K edge from the Cr-VO 2 films with a Cr ion flux ≥ 10 13 ions/cm 2 showed no temperature-dependent behavior, implying no changes in the local density of states of V 3d t 2g and e g orbitals during MIT. Extended XAFS (EXAFS) revealed that implanted Cr and Co ions and their tracks caused a substantial amount of structural disorder and distortion at both vanadium and oxygen sites. The resistance and XAFS measurements revealed that VO 2 experiences a sharp MIT when the distance of V–V pairs undergoes an SPT without any transitions in either the VO 6 octahedrons or the V 3d t 2g and eg states. This indicates that the MIT of VO 2 occurs with no changes of the crystal fields.
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High field magnetization, superconductivity, and tunneling properties of refractory metal single crystals
Friction and wear of hexagonal metals and alloys as related to crystal structure and lattice parameters in vacuum
The superconducting and structural properties of elemental strontium metal were investigated under pressures up to 60 GPa while maintaining cryogenic conditions during pressure application. Applying pressure at low temperatures reveals differences in superconducting and structural phases compared to previous reports obtained at room temperatures. Notably, the superconducting critical temperature exhibits a twofold increase under compression after cryogenic cooling within the pressure range of 35–42 GPa, compared to cryogenic cooling after room-temperature compression. Subsequently, the transition width becomes significantly sharper above 42 GPa. Low-temperature x-ray diffraction measurements under pressure reveal that this change corresponds to the Sr-III to Sr-IV transition, with no evidence of any metastable structure. Furthermore, the monoclinic Sr-IV structure was observed to remain stable to much higher pressures—at least up to 60 GPa, without the appearance of the incommensurate Sr-V phase present at room temperature. As a result, this implies that thermal activation energy plays an important role in overcoming the presence of a kinetic barrier to the Sr-V phase at room temperature.
Contact potential measurements of work function dependence on adsorption of alkali metals on Ta/110/ and W/100/ crystals under ultrahigh vacuum
Crystal structure and lattice parameter effects on single and polycrystalline metals adhesion, friction and wear properties, discussing basal slip hexagonal metals
The calamitous impacts of untethered carbon emission from fossil-fuel-burning energy infrastructure calls for accelerated development of large-scale CO 2 capture, utilization, and storage technologies that are underpinned by fundamental understanding of molecular-level chemical processes. In the subsurface, rocks rich in divalent metals can react with CO 2 , permanently sequestering it in the form of stable metal carbonate minerals, with the CO 2 -H 2 O composition of the post-injection pore fluid acting as a primary control variable. Herein, we compare mechanistic reaction pathways for aqueous-mediated carbonation with carbon mineralization occurring in nanoscale adsorbed water films. In the extreme of pores filled with a CO 2 -dominant fluid, carbonation reactions are confined to nanometer-thick water films coating mineral surfaces, which enable metal cation release, transport, nucleation, and crystallization of metal carbonate minerals. Though seemingly counterintuitive, laboratory studies have demonstrated facile carbonation rates in these low water environments, which in recent years has begun to be better understood in mechanistic detail. The overarching objective of this review is to delineate the unique underlying molecular-scale reaction mechanisms that govern CO 2 mineralization in these reactive and dynamic quasi-2D interfaces. Here. we highlight the importance of understanding unique properties in thin water films, such as how water dielectric properties, and consequently ion solvation/hydration behavior, can change under nanoconfinement. We conclude by identifying important frontiers for future work and opportunities to exploit these fundamental chemical insights for decarbonization technologies in the 21st century.
Refractory transition metal carbide single crystal growth parameters
Polycrystalline IrGe4 was synthesized by annealing elements at 800 °C for 240 h, and the composition was confirmed by energy-dispersive X-ray spectroscopy. IrGe 4 adopts a chiral crystal structure (space group P3 1 21) instead of a polar crystal structure (P3 1 ), which was corroborated by the convergent-beam electron diffraction and Rietveld refinements using synchrotron powder X-ray diffraction data. The crystal structure features layers of IrGe 8 polyhedra along the b axis, and the layers are connected by edge- and corner-sharing. Each layer consists of corner-shared [Ir 3 Ge 20 ] trimers, which are formed by three IrGe 8 polyhedra connected by edge-sharing. Temperature-dependent resistivity indicates metallic behavior. The magnetoresistance increases with increasing applied magnetic field, and the nonsaturating magnetoresistance reaches 11.5% at 9 T and 10 K. The Hall resistivity suggests that holes are the majority carrier type, with a carrier concentration of 4.02 × 10 21 cm –3 at 300 K. In conclusion, electronic band structures calculated by density functional theory reveal a Weyl point with a chiral charge of +3 above the Fermi level.