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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs.

Grunthaner, F. J.↗
NASA NTRS1989

Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

Nakamura, Shuji↗
NASA NTRS1988

Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy

Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.

Peng, C. K.↗
NASA NTRS1988

Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

(111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

Radhakrishnan, G.↗
NASA NTRS1988

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Nouhi, A.↗
NASA NTRS2017

Investigation of the High-Energy Oxidation of FiberForm from DSMC Analysis of Molecular Beam Experiments

A collaborative effort between the University of Illinois at Urbana-Champaign (UIUC), NASA Ames Research Center (ARC) and Montana State University (MSU) succeeded at developing a new finite-rate carbon oxidation model from molecular beam scattering experiments on vitreous carbon (VC). We now aim to use the direct simulation Monte Carlo (DSMC) code SPARTA to apply the model to each fiber of the porous fibrous Thermal Protection Systems (TPS) material FiberForm (FF). The detailed micro-structure of FF was obtained from X-ray micro-tomography and then used in DSMC. Both experiments and simulations show that the CO/O products ratio increased at all temperatures from VC to FF. We postulate this is due to the larger number of collisions an O atom encounters inside the porous FF material compared to the flat surface of VC. For the simulations, we particularly focused on the lowest and highest temperatures studied experimentally, 1023 K and 1823 K, and found good agreement between the finite-rate DSMC simulations and experiments.

Oxidation↗
NASA NTRS1977

A high pressure modulated molecular beam mass spectrometric sampling system

The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

Stearns, C. A.↗
NASA NTRS1982

Molecular-beam sampling study of extinguishment of methane-air flames by dry chemicals

The use of Al2O3, NaHCO3, KHCO3, NH4H2PO4 and KCl powders for the inhibition of a methane/oxygen diffusion flame is studied through measurement of composition and temperature profiles, using a molecular beam mass spectrometer sampling system. In order to obtain significant inhibition without extinguishing the flame, a powder feeding rate of 2 mg/liter of gas was used for KCl and Al2O3, and of 3 mg/liter of gas for the remaining powders. CH4, O2, N2, H2O and CO2 concentrations were measured by the mass spectrometer, while temperature was measured by the time-of-flight technique. For the powder feeding rates used, Al2O3 was the least and KCl and NH2H4PO2 the most effective in reducing temperature; in reaction-inhibition effectiveness, Al2O3 was again lowest while KCl was superior to all others. Because the KCl concentration was only 2/3 that of NH4H2PO4, it is recommended as the most effective temperature reducer and reaction inhibitor.

Knuth, E. L.↗
NASA NTRS1992

A molecular beam mass spectrometric study of the formation and photolysis of C(lc)lO dimer

A study of the chlorine oxides present at temperatures and pressures typical of the Antarctic stratosphere was carried out. A series of low temperature flow reactors was constructed and used in conjunction with molecular beam mass spectrometric techniques to identify species and characterize their kinetic behavior at temperatures of -20 to -70 C and pressures of from 30 to 130 Torr. It was found that the gas phase chlorine-oxygen system was quite complex at low temperatures. ClO dimer was identified and found to be thermodynamically very stable under stratospheric conditions. It was also found that any system which contained ClO also contained a larger oxide. The oxide was identified as Cl2O3. A survey of possible higher oxides, which have been postulated as possible chlorine sinks in the stratosphere, was also carried out. The rate of formation of ClO dimer was measured as a function of temperature and pressure. Measurements were made of both the decay of ClO and the formation of the dimer. By comparing these rates it was determined that virtually all of the ClO was converted to the dimer under stratospheric conditions, and that the other ClO reactions were not important under these conditions.

Greene, Frank T.↗
NASA NTRS1968

Time-of-flight velocity analysis of atomic and molecular beams

Conditions required for resolving a given beam speed distribution were evaluated by calculating the time-of-flight (TOF) signal for a finite open time of the beam shutter. Design criteria for a beam chopper and detection system are discussed in terms of the resolution, the range of speeds to be measured, and the optimum signal to noise ratio. A TOF system for detection of high intensity molecular beams with large speed ratios, as well as for low intensity scattered beams, is described. Experimental results are presented.

Hagena, O. F.↗
NASA NTRS1995

Molecular beam scattering from C-13 enriched Kapton and correlation with the EOIM-3 carousel experiment

Mass spectra of products emerging from identical samples of a C-13-enriched polyimide polymer (chemically equivalent to Kapton) under atomic oxygen bombardment in space and in the laboratory were collected. Reaction products unambiguously detected in space were CO-13, NO, (12)CO2, and (13)CO2. These reaction products and two others, H2O and CO-12, were detected in the laboratory, along with inelastically scattered atomic and molecular oxygen. Qualitative agreement was seen in the mass spectra taken in space and in the laboratory; the agreement may be improved by reducing the fraction of O2 in the laboratory molecular beam. Both laboratory and space data indicated that CO and CO2 products come preferentially from reaction with the imide component of the polymer chain, raising the possibility that the either component may degrade in part by the 'evaporation' of higher molecular weight fragments. Laboratory time-of-flight distributions showed: (1) incomplete energy accommodation of impinging O and O2 species that do not react with the surface; and (2) both hyperthermal and thermal CO and CO2 products, suggesting two distinct reaction mechanisms with the surface.

Minton, Timothy K.↗
NASA NTRS1993

Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors. The extended cutoffwavelengths resulted from the reduced effective potential barriers due to the combined effects of anincreased electric field near the silicide/Si interface and the Schottky image force. The p+ dopingspikes were grown by molecular beam epitaxy at 450 degrees C using elemental boron as the dopantsource, with doping concentrations ranging from 5 x 10^(19) to 2 x 10^(20) cm^(-3). The cutoffwavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIRregime was demonstrated. Furthermore, the effective potential barriers determined by the Richardsonplots were used to study the electrically activated boron dopant concentrations of the thin (1-nm-thick) spikes.

del Castillo, H. M.↗
NASA NTRS1988

Increased effective barrier heights in Schottky diodes by molecular-beam epitaxy of CoSi2 and Ga-doped Si on Si(111)

Increasing the effective Schottky-barrier height of epitaxial CoSi2/Si(111) diodes by the use of thin, highly doped Si layers in close proximity to the metal-semiconductor interface has been studied. Intrinsic Si, Si doped by coevaporation of Ga, and epitaxial CoSi2 layers have all been grown in the same molecular-beam epitaxy system. Current-voltage and photoresponse characterization yield barrier heights ranging from 0.61 eV for a sample with no p(+) layer to 0.89 eV for a sample with a 20-nm-thick p(+) layer. These results are compared to theoretical values based on a one-dimensional solution of Poisson's equation under the depletion approximation.

Fathauer, R. W.↗
NASA NTRS1992

Surface morphology of molecular-beam epitaxially grown Si(1-x)Ge(x) layers on (100) and (110) Si

The surface morphology and dislocation structure of Si(1-x)Ge(x) layers grown on (100) and (110) Si substrates have been investigated using atomic force microscopy, and scanning and transmission electron microscopy. The layers, which have up to a 1.2 percent lattice mismatch with the substrates, were grown by molecular-beam epitaxy at 550 C at thicknesses above those required for the introduction of dislocations. Si(1-x)Ge(x) layers grown on (100) show a crosshatch morphology which is correlated to the underlying misfit dislocation network. Annealing greatly enhances the surface roughness producing a partial islanding growing on the preexisting crosshatch morphology. On the (110) substrates no annealing is necessary to produce a roughened surface. The roughened surface morphology is analyzed as a strain-reducing growth mode which enables partial relaxation of the near-surface atomic planes.

Pike, W. T.↗
NASA NTRS1993

Long-wavelength PtSi infrared detectors fabricated by incorporating a p(+) doping spike grown by molecular beam epitaxy

By incorporating a 1-nm-thick p(+) doping spike at the PtSi/Si interface, we have successfully demonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime for the first time. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p(+) doping spike and the Schottky image force. The p(+) doping spikes were grown by molecular beam epitaxy at 450 C, using elemental boron as the dopant source, with doping concentrations ranging from 5 x 10 exp 19 to 2 x 10 exp 20/cu cm. Transmission electron microscopy indicated good crystalline quality of the doping spikes. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p(+) spikes. Thermionic emission dark current characteristics were observed and photoresponses in the LWIR regime were demonstrated.

Lin, T. L.↗
NASA NTRS1993

Infrared Rugates by Molecular Beam Epitaxy

Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

Rona, M.↗