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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Three-Dimensional Vertical-Bloch-Line Memory System

In proposed magnetic memory system without moving parts, data is stored in stack of two-dimensional vertical-Bloch-line (VBL) memory chips or modules. System similar to one described in "Three-Dimensional Magnetic-Bubble Memory System" (NPO-18533). Each VBL module in this memory system silimar to module described in "Vertical-Bloch-Line Memory" (NPO-18467). Advantages include high storage density, high speed, nonvolatility, and insensitivity to ionizing radiation.

Katti, Romney R.↗
NASA NTRS1994

Improved Ferroelectric Memories With Nondestructive Readout

Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.

Thakoor, Sarita↗
NASA NTRS1993

Software Coherence in Multiprocessor Memory Systems

Processors are becoming faster and multiprocessor memory interconnection systems are not keeping up. Therefore, it is necessary to have threads and the memory they access as near one another as possible. Typically, this involves putting memory or caches with the processors, which gives rise to the problem of coherence: if one processor writes an address, any other processor reading that address must see the new value. This coherence can be maintained by the hardware or with software intervention. Systems of both types have been built in the past; the hardware-based systems tended to outperform the software ones. However, the ratio of processor to interconnect speed is now so high that the extra overhead of the software systems may no longer be significant. This issue is explored both by implementing a software maintained system and by introducing and using the technique of offline optimal analysis of memory reference traces. It finds that in properly built systems, software maintained coherence can perform comparably to or even better than hardware maintained coherence. The architectural features necessary for efficient software coherence to be profitable include a small page size, a fast trap mechanism, and the ability to execute instructions while remote memory references are outstanding.

Bolosky, William Joseph↗
NASA NTRS1994

A method to compute SEU fault probabilities in memory arrays with error correction

With the increasing packing densities in VLSI technology, Single Event Upsets (SEU) due to cosmic radiations are becoming more of a critical issue in the design of space avionics systems. In this paper, a method is introduced to compute the fault (mishap) probability for a computer memory of size M words. It is assumed that a Hamming code is used for each word to provide single error correction. It is also assumed that every time a memory location is read, single errors are corrected. Memory is read randomly whose distribution is assumed to be known. In such a scenario, a mishap is defined as two SEU's corrupting the same memory location prior to a read. The paper introduces a method to compute the overall mishap probability for the entire memory for a mission duration of T hours.

Gercek, Gokhan↗
NASA NTRS1999

Aerodynamic Shape Optimization Using A Combined Distributed/Shared Memory Paradigm

Current parallel computational approaches involve distributed and shared memory paradigms. In the distributed memory paradigm, each processor has its own independent memory. Message passing typically uses a function library such as MPI or PVM. In the shared memory paradigm, such as that used on the SGI Origin 2000 machine, compiler directives are used to instruct the compiler to schedule multiple threads to perform calculations. In this paradigm, it must be assured that processors (threads) do not simultaneously access regions of memory in such away that errors would occur. This paper utilizes the latest version of the SGI MPI function library to combine the two parallelization paradigms to perform aerodynamic shape optimization of a generic wing/body.

Cheung, Samson↗
NASA NTRS1994

High Performance Programming Using Explicit Shared Memory Model on Cray T3D1

The Cray T3D system is the first-phase system in Cray Research, Inc.'s (CRI) three-phase massively parallel processing (MPP) program. This system features a heterogeneous architecture that closely couples DEC's Alpha microprocessors and CRI's parallel-vector technology, i.e., the Cray Y-MP and Cray C90. An overview of the Cray T3D hardware and available programming models is presented. Under Cray Research adaptive Fortran (CRAFT) model four programming methods (data parallel, work sharing, message-passing using PVM, and explicit shared memory model) are available to the users. However, at this time data parallel and work sharing programming models are not available to the user community. The differences between standard PVM and CRI's PVM are highlighted with performance measurements such as latencies and communication bandwidths. We have found that the performance of neither standard PVM nor CRI s PVM exploits the hardware capabilities of the T3D. The reasons for the bad performance of PVM as a native message-passing library are presented. This is illustrated by the performance of NAS Parallel Benchmarks (NPB) programmed in explicit shared memory model on Cray T3D. In general, the performance of standard PVM is about 4 to 5 times less than obtained by using explicit shared memory model. This degradation in performance is also seen on CM-5 where the performance of applications using native message-passing library CMMD on CM-5 is also about 4 to 5 times less than using data parallel methods. The issues involved (such as barriers, synchronization, invalidating data cache, aligning data cache etc.) while programming in explicit shared memory model are discussed. Comparative performance of NPB using explicit shared memory programming model on the Cray T3D and other highly parallel systems such as the TMC CM-5, Intel Paragon, Cray C90, IBM-SP1, etc. is presented.

Simon, Horst D.↗
NASA NTRS2000

Non-Volatile Memory Technology Symposium 2000: Proceedings

This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2000 that was held on November 15-16, 2000 in Arlington, Virginia. The proceedings contains a wide range of papers that cover the presentations of myriad advances in the nonvolatile memory technology during the recent past including memory cell design, simulations, radiation environment, and emerging memory technologies. The papers presented in the proceedings address the design challenges and applications and deals with newer, emerging memory technologies as well as related issues of radiation environment and die packaging.

Aranki, Nazeeh↗
NASA NTRS2000

Implementation of Ferroelectric Memories for Space Applications

Ferroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.

Philpy, Stephen C.↗
NASA NTRS2004

A Novel Metal-Ferroelectric-Semiconductor Field-Effect Transistor Memory Cell Design

The use of a Metal-Ferroelectric-Semiconductor Field-Effect Transistor (MFSFET) in a resistive-load SRAM memory cell has been investigated A typical two-transistor resistive-load SRAM memory cell architecture is modified by replacing one of the NMOS transistors with an n-channel MFSFET. The gate of the MFSFET is connected to a polling voltage pulse instead of the other NMOS transistor drain. The polling voltage pulses are of sufficient magnitude to saturate the ferroelectric gate material and force the MFSFET into a particular logic state. The memory cell circuit is further modified by the addition of a PMOS transistor and a load resistor in order to improve the retention characteristics of the memory cell. The retention characteristics of both the "1" and "0" logic states are simulated. The simulations show that the MFSFET memory cell design can maintain both the "1" and "0" logic states for a long period of time.

Phillips, Thomas A.↗
NASA NTRS2004

Potential High-Temperature Shape-Memory Alloys Identified in the Ti(Ni,Pt) System

"Shape memory" is a unique property of certain alloys that, when deformed (within certain strain limits) at low temperatures, will remember and recover to their original predeformed shape upon heating. It occurs when an alloy is deformed in the low-temperature martensitic phase and is then heated above its transformation temperature back to an austenitic state. As the material passes through this solid-state phase transformation on heating, it also recovers its original shape. This behavior is widely exploited, near room temperature, in commercially available NiTi alloys for connectors, couplings, valves, actuators, stents, and other medical and dental devices. In addition, there are limitless applications in the aerospace, automotive, chemical processing, and many other industries for materials that exhibit this type of shape-memory behavior at higher temperatures. But for high temperatures, there are currently no commercial shape-memory alloys. Although there are significant challenges to the development of high-temperature shape-memory alloys, at the NASA Glenn Research Center we have identified a series of alloy compositions in the Ti-Ni-Pt system that show great promise as potential high-temperature shape-memory materials.

Noebe, Ronald D.↗
NASA NTRS2006

Radiation Tolerant Intelligent Memory Stack (RTIMS)

The Radiation Tolerant Intelligent Memory Stack (RTIMS), suitable for both geostationary and low earth orbit missions, has been developed. The memory module is fully functional and undergoing environmental and radiation characterization. A self-contained flight-like module is expected to be completed in 2006. RTIMS provides reconfigurable circuitry and 2 gigabits of error corrected or 1 gigabit of triple redundant digital memory in a small package. RTIMS utilizes circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuitries are stacked into a module of 42.7mm x 42.7mm x 13.00mm. Triple module redundancy, current limiting, configuration scrubbing, and single event function interrupt detection are employed to mitigate radiation effects. The mitigation techniques significantly simplify system design. RTIMS is well suited for deployment in real-time data processing, reconfigurable computing, and memory intensive applications.

Ng, Tak-kwong↗
NASA NTRS1995

Vertical bloch line memory

A new read gate design for the vertical Bloch line (VBL) memory is disclosed which offers larger operating margin than the existing read gate designs. In the existing read gate designs, a current is applied to all the stripes. The stripes that contain a VBL pair are chopped, while the stripes that do not contain a VBL pair are not chopped. The information is then detected by inspecting the presence or absence of the bubble. The margin of the chopping current amplitude is very small, and sometimes non-existent. A new method of reading Vertical Bloch Line memory is also disclosed. Instead of using the wall chirality to separate the two binary states, the spatial deflection of the stripe head is used. Also disclosed herein is a compact memory which uses vertical Bloch line (VBL) memory technology for providing data storage. A three-dimensional arrangement in the form of stacks of VBL memory layers is used to achieve high volumetric storage density. High data transfer rate is achieved by operating all the layers in parallel. Using Hall effect sensing, and optical sensing via the Faraday effect to access the data from within the three-dimensional packages, an even higher data transfer rate can be achieved due to parallel operation within each layer.

Katti, Romney R.↗
NASA NTRS1994

Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment

Thin film ferroelectric capacitors (10) comprising a ferroelectric film (18) sandwiched between electrodes (16 and 20) for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode (20). The anneal is done so as to form the interface (22) between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550.degree. to 600.degree. C. for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the non-switching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the non-switching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.

Thakoor, Sarita↗
NASA NTRS2011

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Campbell, Kristy A.↗
NASA NTRS2011

Effect of Graphene Addition on Shape Memory Behavior of Epoxy Resins

Shape memory polymers (SMPs) and composites are a special class of smart materials known for their ability to change size and shape upon exposure to an external stimulus (e.g. light, heat, pH, or magnetic field). These materials are commonly used for biomedical applications; however, recent attempts have been made towards developing SMPs and composites for use in aircraft and space applications. Implementing SMPs and composites to create a shape change effect in some aircraft structures could potentially reduce drag, decrease fuel consumption, and improve engine performance. This paper discusses the development of suitable materials to use in morphing aircraft structures. Thermally responsive epoxy SMPs and nanocomposites were developed and the shape memory behavior and thermo-mechanical properties were studied. Overall, preliminary results from dynamic mechanical analysis (DMA) showed that thermally actuated shape memory epoxies and nanocomposites possessed Tgs near approximately 168 C. When graphene nanofiller was added, the storage modulus and crosslinking density decreased. On the other hand, the addition of graphene enhanced the recovery behavior of the shape memory nanocomposites. It was assumed that the addition of graphene improved shape memory recovery by reducing the crosslinking density and increasing the elasticity of the nanocomposites.

Williams, Tiffany↗
NASA NTRS2012

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A.↗
NASA NTRS2013

FPGA Flash Memory High Speed Data Acquisition

The purpose of this research is to design and implement a VHDL ONFI Controller module for a Modular Instrumentation System. The goal of the Modular Instrumentation System will be to have a low power device that will store data and send the data at a low speed to a processor. The benefit of such a system will give an advantage over other purchased binary IP due to the capability of allowing NASA to re-use and modify the memory controller module. To accomplish the performance criteria of a low power system, an in house auxiliary board (Flash/ADC board), FPGA development kit, debug board, and modular instrumentation board will be jointly used for the data acquisition. The Flash/ADC board contains four, 1 MSPS, input channel signals and an Open NAND Flash memory module with an analog to digital converter. The ADC, data bits, and control line signals from the board are sent to an Microsemi/Actel FPGA development kit for VHDL programming of the flash memory WRITE, READ, READ STATUS, ERASE, and RESET operation waveforms using Libero software. The debug board will be used for verification of the analog input signal and be able to communicate via serial interface with the module instrumentation. The scope of the new controller module was to find and develop an ONFI controller with the debug board layout designed and completed for manufacture. Successful flash memory operation waveform test routines were completed, simulated, and tested to work on the FPGA board. Through connection of the Flash/ADC board with the FPGA, it was found that the device specifications were not being meet with Vdd reaching half of its voltage. Further testing showed that it was the manufactured Flash/ADC board that contained a misalignment with the ONFI memory module traces. The errors proved to be too great to fix in the time limit set for the project.

Gonzalez, April↗
NASA NTRS2013

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A↗