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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Computational Data for: "Introducing Metal-Sulfur Active Sites in Metal-Organic Frameworks via Post-Synthetic Modification for Hydrogenation Catalysis"
Emf comparing device nondestructively inspects metals and alloys for conformance to a chemical specification. It uses the Seebeck effect to measure the difference in emf produced by the junction of a hot probe and the junction of a cold contact on the surface of an unknown metal.
Soft metal plating of hard metal lip seal enables successful operation of seal in a cryogenic fluid line under high pressure. The seal is coated with a thin film of 24 carat gold on the lip area to provide antigall and seal properties.
Less common refractory metals /rhenium, technetium, hafnium, noble metals/ properties, phase equilibria, etc
Laser harmonic-frequency mixing techniques extended into IR with IR metal-metal point contact diode
Metal-oxygen and metal-nitrogen systems for use as reduced pressure standards using Sieverts apparatus
Evaluation of refractory metal alloy metering and isolation valves for alkali metal service at 1900 F
Metal-oxide-metal tunnel diode properties, discussing parametric effects on small and large signals detector operation
Metallic transfer between polycrystalline metals in sliding contact was examined. Hemispherical riders of iron, nickel, and cobalt were slid on tungsten, tantalum, niobium, and molybdenum disks in ultrahigh vacuum. Auger emission spectroscopy was used to monitor the elemental composition of the disk surfaces. Iron, nickel, and cobalt transferred to tungsten, whereas only cobalt transferred to tantalum, niobium, and molybdenum. The results of this investigation are discussed in terms of the cohesive energy and strain hardening characteristics of the specimen materials.
A study was conducted to obtain indications of the potentialities of laminar metal-metal composites for elevated temperature use. Most of the composites consisted of multiple layers or laminae of tungsten alternated with laminae of Nichrome V, a ductile, weaker but oxidation-resistant alloy. Composites with 50 volume percent of each phase were tested in tension and stress rupture at temperatures of 871 and 1093 C (1600 and 2000 F) and in impact at 23 and 524 C (73 and 975 F). A tension and a short time stress-rupture test was conducted on specimens of 77 v/o W-Re-Hf-C/23 v/o Inconel alloy 600 at 1093 C (2000 F).
A study was conducted to obtain indications of the potentialities of laminar metal-metal composites for elevated-temperature use. Most of the composites consisted of multiple layers or laminae of tungsten alternated with laminae of Nichrome V, a ductile, weaker, but oxidation-resistant alloy. Composites with 50 vol % of each phase made from 0.0025 cm, 0.0125 cm, or 0.050 cm laminae, were tested in tension and stress rupture at temperatures of 871 and 1093 C and in impact at 23 and 524 C. A tension and a short-time stress-rupture test was conducted on specimens of 77 vol % W-Re-Hf-C/23 vol % Inconel Alloy 600 at 1093 C.
The bias dependence of the nonlinear mixing characteristics of metal-barrier-metal junction currents is deduced assuming an electron tunneling model. The difference-frequency beat voltage at frequency omega sub 1 - (n x omega sub 2), when n is an integer and omega sub 1 and omega sub 2 are the assumed frequencies of two induced currents, is found to have n zeros as the diode bias is varied. Recent experimental observations have demonstrated such characteristics.
The performance and suitability of various metal hydride materials were examined for use as possible hydrogen storage reservoirs for secondary metal-hydrogen batteries. Lanthanum pentanickel hydride appears as a probable candidate in terms of stable hydrogen supply under feasible thermal conditions. A kinetic model describing the decomposition rate data of the hydride has been developed.
Direct detection experiments have demonstrated the coherent coupling of 10.6 micrometer radiation into photolithographically fabricated metal-oxide-metal tunnel junctions. A CO2 laser beam mechanically chopped at 1 KHz was focused at a variable angle of incidence with a power density of about 10 W/sq cm at the diodes. Diodes in which the junction resistance was much greater than the lead resistance displayed angular characteristics dominated by coherent antenna coupling.
Techniques for producing model metal-metal oxide systems for the purpose of evaluating the results of processing such systems in the low-gravity environment afforded by a drop tower facility are described. Because of the lack of success in producing suitable materials samples and techniques for processing in the 3.5 seconds available, the program was discontinued.
The optical response of metal-barrier-metal (MBM) junctions is discussed, with emphasis on the nonlinearity of response associated with reversal of polarity as optical intensity is increased. This nonlinear behavior can be used to measure correlation functions of optical pulses or to generate ultrashort electrical pulses. Expressions for the current flowing through the insulating barrier (junction), and for the rectification current, are given. Pulse signal and polarity of the electrical pulse evolves as the junction bias is varied about the null-signal bias. The apparatus used to obtain rectification pulse signals is described; the calculated evolution of the rectified pulse shape is found to correspond to that of pulse signals obtained experimentally. The generation of pulses six orders of magnitude smaller than a previously-obtained instrument-limited 1.6 nanosecond pulse has been observed.
It is shown that correlation currents arising from the superposition of pairs of states on distinct sides of a potential barrier in metal-barrier-metal structures can result in inelastic tunneling through the emission of surface plasmons. Net gain of an externally excited plasmon field is possible.
An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and cross over between individual circuit elements in integrated circuits without significantly reducing the reliability or seriously affecting the yield.