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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Development of a hybrid microelectronics solid state relay for 2500 volts isolation and minus 120 C to 80 C thermal cycling range

A hybrid microelectronics solid state relay was developed in a TO-116 package for the MINX project. The relay provides 2500 Vdc input to output isolation and operated from a MHTL logic signal to switch a load of 400 Vdc at 2 mA. The relay is designed to operate in space and survive 1000 thermal cycles of 120 C to 80 C. The use of X-rays for failure analysis in small hybrid circuits proved valuable and the applications of vacuum deposited Parylene as a dielectric coating proved extremely valuable.

Sater, B. L.↗
NASA NTRS1974

Microelectronics packaging technique: A Concept

Plug-in flat packs and flat conductor cable (FCC) can be used to make compact, lightweight, external monitoring system requiring minimum of hard wiring. Microelectronic monitoring panel includes replaceable integrated or hybrid circuit flat packs and FCC.

Stringer, E. J.↗
NASA NTRS1974

Microelectronic bioinstrumentation system

The progess made from April 1973 to June 1974 on a microelectronics bioinstrumentation system is reported and includes data for the following three individual projects: (1) a radio frequency powered implant telemetry system; (2) an ingestible temperature telemeter; and (3) development of pO2 and pH sensors. Proposed activities for continuation of the research for the period September 1, 1974 to August 31, 1975 are also discussed.

Ko, W. H.↗
NASA NTRS1976

Microelectronic components and metallic oxide studies and applications

The project involved work in two basic areas: (1) Evaluation of commercial screen printable thick film conductors, resistors, thermistors and dielectrics as well as alumina substrates used in hybird microelectronics industries. Results of tests made on materials produced by seven companies are presented. (2) Experimental studies on metallic oxides of copper and vanadium, in an effort to determine their electrochemical properties in crystalline, powder mixtures and as screen printable thick films constituted the second phase of the research effort. Oxide investigations were aimed at finding possible applications of these materials as switching devices memory elements and sensors.

Williams, L., Jr.↗
NASA NTRS1976

High and low threshold P-channel metal oxide semiconductor process and description of microelectronics facility

The fabrication techniques and detail procedures for creating P-channel Metal-Oxide-Semiconductor (P-MOS) integrated circuits at George C. Marshall Space Flight Center (MSFC) are described. Examples of P-MOS integrated circuits fabricated at MSFC together with functional descriptions of each are given. Typical electrical characteristics of high and low threshold P-MOS discrete devices under given conditions are provided. A general description of MSFC design, mask making, packaging, and testing procedures is included. The capabilities described in this report are being utilized in: (1) research and development of new technology, (2) education of individuals in the various disciplines and technologies of the field of microelectronics, and (3) fabrication of many types of specially designed integrated circuits which are not commercially feasible in small quantities for in-house research and development programs.

Bouldin, D. L.↗
NASA NTRS1976

Electrical properties of adhesives used in hybrid microelectronic applications

This paper describes a test program conducted to determine the electrical properties of adhesives used in hybrid microelectronic applications and to develop test methods for measuring these properties. The electrical properties of transistor chips mounted with conductive adhesives are also measured, and the effect of long term storage at high temperature on these devices is determined.

Sergent, J. E.↗
NASA NTRS1978

The large scale microelectronics Computer-Aided Design and Test (CADAT) system

The CADAT system consists of a number of computer programs written in FORTRAN that provide the capability to simulate, lay out, analyze, and create the artwork for large scale microelectronics. The function of each software component of the system is described with references to specific documentation for each software component.

Gould, J. M.↗
NASA NTRS1976

Evaluation of advanced microelectronic fluxless solder-bump contacts for hybrid microcircuits

Technology for interconnecting monolithic integrated circuit chips with other components is investigated. The advantages and disadvantages of the current flip-chip approach as compared to other interconnection methods are outlined. A fluxless solder-bump contact technology is evaluated. Multiple solder-bump contacts were formed on silicon integrated circuit chips. The solder-bumps, comprised of a rigid nickel under layer and a compliant solder overlayer, were electroformed onto gold device pads with the aid of thick dry film photomasks. Different solder alloys and the use of conductive epoxy for bonding were explored. Fluxless solder-bump bond quality and reliability were evaluated by measuring the effects of centrifuge, thermal cycling, and high temperature storage on bond visual characteristics, bond electrical continuity, and bond shear tests. The applicability and suitability of this technology for hybrid microelectronic packaging is discussed.

Mandal, R. P.↗
NASA NTRS1987

Proceedings of the Goddard Space Flight Center Workshop on Robotics for Commercial Microelectronic Processes in Space

Potential applications of robots for cost effective commercial microelectronic processes in space were studied and the associated robotic requirements were defined. Potential space application areas include advanced materials processing, bulk crystal growth, and epitaxial thin film growth and related processes. All possible automation of these processes was considered, along with energy and environmental requirements. Aspects of robot capabilities considered include system intelligence, ROM requirements, kinematic and dynamic specifications, sensor design and configuration, flexibility and maintainability. Support elements discussed included facilities, logistics, ground support, launch and recovery, and management systems.

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NASA NTRS1989

Vacuum microelectronics for beam power and rectennas

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Gray, Henry F.↗
NASA NTRS1990

Center for Space Microelectronics Technology 1988-1989 technical report

The 1988 to 1989 Technical Report of the JPL Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center. Listed are 321 publications, 282 presentations, and 140 new technology reports and patents.

Olsen, Peggy↗
NASA NTRS1991

Thermal shock testing for assuring reliability of glass-sealed microelectronic packages

Tests were performed to determine if thermal shocking is destructive to glass-to-metal seal microelectronic packages and if thermal shock step stressing can compare package reliabilities. Thermal shocking was shown to be not destructive to highly reliable glass seals. Pin-pull tests used to compare the interfacial pin glass strengths showed no differences between thermal shocked and not-thermal shocked headers. A 'critical stress resistance temperature' was not exhibited by the 14 pin Dual In-line Package (DIP) headers evaluated. Headers manufactured in cryogenic nitrogen based and exothermically generated atmospheres showed differences in as-received leak rates, residual oxide depths and pin glass interfacial strengths; these were caused by the different manufacturing methods, in particular, by the chemically etched pins used by one manufacturer. Both header types passed thermal shock tests to temperature differentials of 646 C. The sensitivity of helium leak rate measurements was improved up to 70 percent by baking headers for two hours at 200 C after thermal shocking.

Thomas, Walter B., III↗
NASA NTRS1991

Evaluation of advanced microelectronics for inclusion in MIL-STD-975

The approach taken by NASA and JPL (Jet Propulsion Laboratory) in the development of a MIL-STD-975 section which contains advanced technology such as Large Scale Integration and Very Large Scale Integration (LSI/VLSI) microelectronic devices is described. The parts listed in this section are recommended as satisfactory for NASA flight applications, in the absence of alternate qualified devices, based on satisfactory results of a vendor capability audit, the availability of sufficient characterization and reliability data from the manufacturers and users and negotiated detail procurement specifications. The criteria used in the selection and evaluation of the vendors and candidate parts, the preparation of procurement specifications, and the status of this activity are discussed.

Scott, W. Richard↗
NASA NTRS1991

Center for Space Microelectronics Technology

The 1990 technical report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during 1990. The report lists 130 publications, 226 presentations, and 87 new technology reports and patents.

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NASA NTRS1992

Center for Space Microelectronics Technology

The 1991 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the Center during the past year. The report lists 193 publications, 211 presentations, and 125 new technology reports and patents.

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NASA NTRS1993

CRRES microelectronics package flight data analysis

A detailed in-depth analysis was performed on the data from some of the CRRES MEP (Microelectronics Package) devices. These space flight measurements covered a period of about fourteen months of mission lifetime. Several types of invalid data were identified and corrections were made. Other problems were noted and adjustments applied, as necessary. Particularly important and surprising were observations of abnormal device behavior in many parts that could neither be explained nor correlated to causative events. Also, contrary to prevailing theory, proton effects appeared to be far more significant and numerous than cosmic ray effects. Another unexpected result was the realization that only nine out of thirty-two p-MOS dosimeters on the MEP indicated a valid operation. Comments, conclusions, and recommendations are given.

Stassinopoulos, E. G.↗
NASA NTRS1993

Center for space microelectronics technology

The 1992 Technical Report of the Jet Propulsion Laboratory Center for Space Microelectronics Technology summarizes the technical accomplishments, publications, presentations, and patents of the center during the past year. The report lists 187 publications, 253 presentations, and 111 new technology reports and patents in the areas of solid-state devices, photonics, advanced computing, and custom microcircuits.

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