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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Phonon confinement and interface lattice dynamics of ultrathin high- k rare earth sesquioxide films: the case of Eu 2 O 3 on YSZ(001)

The spatial confinement of atoms at surfaces and interfaces significantly alters the lattice dynamics of thin films, heterostructures and multilayers. Ultrathin films with high dielectric constants (high-k) are of paramount interest for applications as gate layers in current and future integrated circuits. Here we report a lattice dynamics study of high-k Eu 2 O 3 films with thicknesses of 21.3, 2.2, 1.3, and 0.8 nm deposited on YSZ(001). The Eu-partial phonon density of states (PDOS), obtained from nuclear inelastic scattering, exhibits broadening of the phonon peaks accompanied by up to a four-fold enhancement of the number of low-energy states compared to the ab initio calculated PDOS of a perfect Eu 2 O 3 crystal. Our analysis demonstrates that while the former effect reflects the reduced phonon lifetimes observed in thin films due to scattering from lattice defects, the latter phenomenon arises from an ultrathin EuO layer formed between the thin Eu 2 O 3 film and the YSZ(001) substrate. Thus, our work uncovers another potential source of vibrational anomalies in thin films and multilayers, which has to be cautiously considered.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Effect of substrate temperature on the growth of Nb 3 Sn film on Nb by multilayer sputtering

Here, we report on the fabrication of niobium tin (Nb 3 Sn) films by multilayer sequential sputtering on niobium at substrate temperatures ranging from room temperature to 250 °C. The multilayers were then annealed inside a separate vacuum furnace at 950 °C for 3 h. The material properties of the films were characterized by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, atomic force microscopy, and transmission electron microscopy. The superconducting properties of the films were studied by four-point probe resistivity measurements from room temperature to below the superconducting critical temperature T c . The highest film T c was 17.76 K, obtained when the multilayers were deposited at room temperature. When the deposition temperature was raised to 250 °C, a significant reduction in voids was achieved while the film's T c was 17.58 K.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Laser drilling of vias in dielectric for high density multilayer LSHI thick film circuits

A design analysis of a high density multilevel thick film digital microcircuit used for large scale integration is presented. The circuit employs 4 mil lines, 4 mil spaces and requires 4 mil diameter vias. Present screened and fired thick film technology is limited on a production basis to 16 mil square vias. A process whereby 4 mil diameter vias can be fabricated in production using laser technology was described along with a process to produce 4 mil diameter vias for conductor patterns which have 4 mil lines and 4 mil spacings.

Cocca, T.↗
NASA NTRS1995

Multilayer Thin-Film Microcapacitors

Miniature capacitors containing multiple alternating thin-film dielectric and metal layers proposed, especially for use in integrated and hybrid electronic circuits. Because capacitance inversely proportional to thickness of dielectric layers, use of thin, high-quality dielectric layers affords capacitance and energy-storage densities much greater than now available. These devices much smaller and more reliable than state-of-art capacitors.

Thakoor, Sarita↗
DOE OSTI2025

Potential-Controlled Deposition of Multilayer CO 2 Reduction Catalyst Films onto Silicon Photoelectrodes Demonstrates Thickness-Dependent Catalytic Rates

Covalently attaching molecular catalysts to semiconductor surfaces yields promising hybrid photoelectrode architectures for reducing CO 2 to higher-value carbon products. Polymeric molecular catalyst films have higher loading densities than their monolayer counterparts, promising greater rates of solar fuel production. Using photoassisted diazonium electrografting, multilayered films of a Re(apbpy)(CO) 3 Cl CO 2 -reduction catalyst were attached to low-doped p-type Si (pSi). Parallel characterization of the newly formed films with ellipsometry, XPS, and ICP-MS revealed that catalyst loading increased with increasingly negative applied grafting potentials (Vgraft), providing us an experimental test bed to study the effects of film thickness on photocatalytic performance. Controlled-potential electrolysis experiments showed enhanced CO evolution rates on all photoelectrodes with increasingly negative applied potentials (V app ), with thicker films exhibiting the greatest rates of enhancement. Competitive proton reduction reactions at the Si surface were not strongly linked to V app but dependent on film thickness, with thicker films showing increased CO-to-H 2 production ratios.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment

Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, in this study, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.

Seo, M. [Lawrence Livermore National Laboratory (L↗
NASA NTRS2005

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Xiao, Ye-Gao↗
NASA NTRS1986

Computer simulation of thin-film nucleation and growth - The multilayer mode

The computer simulation of thin-film nucleation and growth, which was previously performed for the case of single monolayer, has been extended to the case of multilayer growth. The simulation results show that the kinetics of multilayer growth is nearly identical to that of monolayer growth. The cluster density resulting from the multilayer mode is similar to that resulting from the monolayer mode at low coverage. At high coverage, multilayer growth results in substantially higher cluster density than that resulting from monolayer growth.

Salik, J.↗
DOE OSTI2024

Analysis and Design for Sustainable Circularity of Barrier Films Used in Sheet Molding Composites Production

Sheet molding composites (SMC) are thermoset based molding compounds with a global market size of USD 2.1 billion in 2020. SMC is usually processed with multilayer barrier/carrier films to prevent emissions from volatile organic compounds (VOC). The plastic barriers are separated from SMC after the curing process and discarded. To illustrate the high consumption volume of SMC barrier/carrier films, Kohler Co., a company which uses SMC in their bath and showering product lines, alone generates over 1M lb/year of SMC barrier/carrier film waste. Therefore, high amount of SMC barrier/carrier film plastic waste creates a great opportunity for reusing, recycling, or valorization at its end of life. This can be achieved through transition from a linear to a circular supply chain design. However, this transition will not be feasible without overcoming the technical and economic barriers. This project aims to tackle this by making the film circular. Different end of life alternatives will be evaluated experimentally. The reusability of the film will be studied through applying different mechanical and solvent cleaning techniques. The operability concerns regarding the utilization of the cleaned film for long run operations will be addressed by thermally stitching the film. Pelletizing of the cleaned film will also be investigated as a viable technique for recycling or downcycling of the film as molded products. In addition to technical barriers, designing a sustainable circular supply chain for SMC carrier film products requires uncovering the collaboration opportunities between suppliers and users at different stages of the value chain to expand its use to other products. These opportunities will be investigated by finding companies willing to buy or treat the plastic film waste. Finally, the economic viability and environmental impacts of these circular design alternatives will be evaluated through techno-economic assessment (TEA) and life cycle analysis (LCA). Techno-economic and life cycle inventory data for various pathways will also be made available as one of the main outcomes of this project. Preliminary LCA results indicate that the current SMC film supply chain (base case) emits 5.81 tonne CO2 eq. and consumes 104 GJ energy per tonne of SMC film. It is estimated that alternative circular pathways result in 14-20% less CO2 emissions and 34-44% reduction in embodied energy. This project will develop a tool to analyze the circularity and sustainability of hundreds of combinations of alternatives in different life cycle stages. Users of this tool will be able to choose the best combination among these alternatives with respect to the selected economic, environmental and circularity objectives.

circular economy↗
NASA NTRS1985

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.

Gergis, I. S.↗
NASA NTRS1975

Wear and interfacial transport of material

Bonding across the interface for two solids in contact and the subsequent transfer of material from one surface to another is a direct result of the interfacial bonds being stronger than the cohesive bonds in either of the two solids. Surface tools such as LEED, Auger emission spectroscopy, field ion microscopy, and the atom probe are used to examine adhesive contacts and to determine the direction, nature, quantity of material transfer and properties of the solids which effect transfer and wear. The electronic nature, cohesive binding energies, surface structure, lattice disregistry and distribution of species in surface layers are all found to effect adhesion and transfer or transport for clean surfaces in solid state contact. The influence of adsorbed and reacted surface films from fractions of a monolayer to multilayer reactive films are considered. It is shown that even fractions of a monolayer of surface active species such as oxygen and sulfur can markedly inhibit adhesion and transport.

Buckley, D. H.↗
NASA NTRS2013

Integrated power passives

A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.

Xie, Huikai↗
DOE OSTI2022

The effects of field history on magnetic skyrmion formation in [Pt/Co/Ir] 3 multilayers

Here, we report on the formation of Néel-type magnetic bubble skyrmions at room temperature in [Pt/Co/Ir] 3 multilayered thin films after an in-plane magnetic field treatment. Polar magneto-optical Kerr Effect (p-MOKE) microscopy images show that the dendritic magnetic configurations observed after AC demagnetization evolve into magnetic bubble skyrmions after the application and subsequent removal of an in-plane magnetic field. Micromagnetic simulations were used to systematically investigate the role of the in-plane magnetic field magnitude, misalignment of the sample, and the Dzyaloshinskii-Moriya interactions (DMI) in generating bubble skyrmions during the field treatment. The simulations show that in-plane fields slightly below the saturation field are the most effective at producing skyrmions, and, furthermore, a small field angle away from the sample plane not only leads to improved skyrmion formation but also provides a means to select the skyrmion polarity where the direction of the out-of-plane component of the field is opposite to the direction of the skyrmion cores. This field treatment scheme leads to a simple and reliable way to create magnetic bubble skyrmions in multilayered thin films with DMI.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Phase-Selective Synthesis of Rhombohedral WS 2 Multilayers by Confined-Space Hybrid Metal–Organic Chemical Vapor Deposition

Rhombohedral polytype transition metal dichalcogenide (TMDC) multilayers exhibit non-centrosymmetric interlayer stacking, which yields intriguing properties such as ferroelectricity, a large second-order susceptibility coefficient χ (2) , giant valley coherence, and a bulk photovoltaic effect. These properties have spurred significant interest in developing phase-selective growth methods for multilayer rhombohedral TMDC films. Here, in this study, we report a confined-space, hybrid metal–organic chemical vapor deposition method that preferentially grows 3R-WS 2 multilayer films with thickness up to 130 nm. We confirm the 3R stacking structure via polarization-resolved second-harmonic generation characterization and the 3-fold symmetry revealed by anisotropic H 2 O 2 etching. The multilayer 3R WS 2 shows a dendritic morphology, which is indicative of diffusion-limited growth. Multilayer regions with large, stepped terraces enable layer-resolved evaluation of the optical properties of 3R-WS 2 via Raman, photoluminescence, and differential reflectance spectroscopy. These measurements confirm the interfacial quality and suggest ferroelectric modification of the exciton energies.

3R-WS2↗
DOE OSTI2021

Multilayer carbon nanotube film-containing devices

The present disclosure relates to a device that includes an active layer and a first charge transport layer, where the first charge transport layer includes a first layer and a second layer, the first layer is in contact with the second layer, the second layer is positioned between the first layer and the active layer, the first layer comprises a first carbon nanostructure, and the second layer includes a second carbon nanostructure.

Wheeler, Lance Michael↗
NASA NTRS2006

Thin Film Physical Sensor Instrumentation Research and Development at NASA Glenn Research Center

A range of thin film sensor technology has been demonstrated enabling measurement of multiple parameters either individually or in sensor arrays including temperature, strain, heat flux, and flow. Multiple techniques exist for refractory thin film fabrication, fabrication and integration on complex surfaces and multilayered thin film insulation. Leveraging expertise in thin films and high temperature materials, investigations for the applications of thin film ceramic sensors has begun. The current challenges of instrumentation technology are to further develop systems packaging and component testing of specialized sensors, further develop instrumentation techniques on complex surfaces, improve sensor durability, and to address needs for extreme temperature applications. The technology research and development ongoing at NASA Glenn for applications to future launch vehicles, space vehicles, and ground systems is outlined.

Wrbanek, John D.↗
NASA NTRS1994

Metal-Film Hall-Effect Devices

Large positive and negative Hall coefficients achievable. Family of Hall-effect devices made from multilayer metal films instead of semiconductor materials. Metal films easier to fabricate; formed by deposition on variety of substrates, and leads readily attached to them. Fabricated with larger areas, potentially more reliable, and less affected by impurities. Also used to measure magnetic fields. Devices especially useful at low temperatures.

Peters, Palmer N.↗