Search NASA⌕ Search

SEARCH · Search NASA

Results for “Optoelectronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7

Effect of annealing over optoelectronic properties of graphene based transparent electrodes

Graphene, an atom–thick two dimensional graphitic material have led various fundamental breakthroughs in the field of science and technology. Due to their exceptional optical, physical and electrical properties, graphene based transparent electrodes have shown several applications in organic light emitting diodes, solar cells and thin film transistors. Here, we are presenting effect of annealing over optoelectronic properties of graphene based transparent electrodes. Graphene based transparent electrodes have been prepared by wet chemical approach over glass substrates. After fabrication, these electrodes tested for optical transmittance in visible region. Sheet resistance was measured using four probe method. Effect of thermal annealing at 200 °C was studied over optical and electrical performance of these electrodes. Optoelectronic performance was judged from ratio of direct current conductivity to optical conductivity (σ{sub dc}/σ{sub opt}) as a figure of merit for transparent conductors. The fabricated electrodes display good optical and electrical properties. Such electrodes can be alternatives for doped metal oxide based transparent electrodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

A multi-GHz chaotic optoelectronic oscillator based on an external cavity semiconductor laser (ECL) is demonstrated. Unlike the standard optoelectronic oscillators for microwave applications, we do not employ the dynamic light output incident on a photodiode to generate the microwave signal, but instead generate the microwave signal directly by measuring the terminal voltage V(t) of the laser diode of the ECL under constant-current operation, thus obviating the photodiode entirely.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Flexible nanograss with highest combination of transparency and haze for optoelectronic plastic substrates

Transparent polymer substrates have recently received increased attention for various flexible optoelectronic devices. Optoelectronic applications such as solar cells and light emitting-diodes would benefit from substrates with both high transparency and high haze, which increase how much light scatters into or out of the underlying photoactive layers. In this letter, we demonstrate a new flexible nanograss plastic substrate that displays the highest combination of transparency and haze in the literature for polyethylene terephthalate (PET). Here, as opposed to other nanostructures that increase haze at the expense of transparency, our nanograss demonstrates the potential to improve both haze and transparency. Furthermore, the monolithic nanograss may be fabricated in a facile scalable maskless reactive ion etching process without the need for additional lithography or synthesis of nanostructures. Our 9 μ m height nanograss sample exhibits a transparency and haze of 92.4% and 89.4%, respectively, and our 34 μ m height nanograss displays a transparency and haze of 91.0% and 97.1%, respectively. We also performed durability experiments that demonstrate these nanostructured PET substrates are robust from bending and show similar transmission and haze values after 5000 cycles of bending.

42 ENGINEERING↗

Effect of environmental screening and strain on optoelectronic properties of two-dimensional quantum defects

Point defects in hexagonal boron nitride (hBN) are promising candidates as single-photon emitters (SPEs) in nanophotonics and quantum information applications. The precise control of SPEs requires in-depth understanding of their optoelectronic properties. However, how the surrounding environment of host materials, including the number of layers, substrates, and strain, influences SPEs has not been fully understood. Here, in this work, we study the dielectric screening effect due to the number of layers and substrates, and the strain effect on the optical properties of carbon dimer and nitrogen vacancy defects in hBN from first-principles many-body perturbation theory. We report that environmental screening causes a lowering of the quasiparticle gap and exciton binding energy, leading to nearly constant optical excitation energy and exciton radiative lifetime. We explain the results with an analytical model starting from the Bethe–Salpeter equation Hamiltonian with Wannier basis. We also show that optical properties of quantum defects are largely tunable by strain with highly anisotropic response, in good agreement with experimental measurements. Our work clarifies the effect of environmental screening and strain on optoelectronic properties of quantum defects in two-dimensional insulators, facilitating future applications of SPEs and spin qubits in low-dimensional systems.

36 MATERIALS SCIENCE↗

Bismuth chalcohalides and oxyhalides as optoelectronic materials

Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns 2 ions (e.g., Tl + , Pb 2+ , and Bi 3+ ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi 3+ , which is also an ns 2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi 3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that the anion vacancies (Se and Br vacancies) in BiSeBr are shallow, which is beneficial to efficient electron transport.

36 MATERIALS SCIENCE↗

Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient ultrafast quantum well IR photodetectors

This project, titled “Understanding the optoelectronic properties of doped 2D organic-inorganic halide perovskite quantum wells: towards efficient quantum well IR photodetectors”, was funded by the U.S. Department of Energy to explore a new class of materials that could make future light-sensing technologies, such as infrared (IR) cameras and detectors more efficient, affordable, and widely available. The research focused on special layered materials called 2D halide perovskites, which are made up of alternating organic and inorganic layers only a few atoms thick. These materials can be tuned at the atomic level to absorb and emit light in precise ways, making them very attractive for use in optoelectronic devices. The main goal of the project was to understand how these perovskite materials absorb light and move electrical charges at very small scales. However, this is not an easy task. These materials often contain a mixture of different structures in the same film, and traditional tools like regular absorption or photoluminescence spectroscopy are not good at telling those structures apart. To solve this, the research team, led by Professor Luisa Whittaker-Brooks at the University of Utah developed a powerful method called electroabsorption spectroscopy. This technique uses electric fields to highlight the unique “fingerprints” of different excitons, which are tiny packets of energy formed when light hits the material. By using this method, the team could separate overlapping signals and learn exactly how the materials respond to light under different conditions, including changes in temperature, thickness, and chemical makeup.

36 MATERIALS SCIENCE↗

Transparent heat-spreader for optoelectronic applications

An optoelectronic cooling system is equally applicable to an LED collimator or a photovoltaic solar concentrator. A transparent fluid conveys heat from the optoelectronic chip to a hollow cover over the system aperture. The cooling system can keep a solar concentrator chip at the same temperature as found for a one-sun flat-plate solar cell. Natural convection or forced circulation can operate to convey heat from the chip to the cover.

42 ENGINEERING↗

Optoelectronic semiconductor device and method of fabrication

An optoelectronic device comprising an optically active layer that includes a plurality of domes is presented. The plurality of domes is arrayed in two dimensions having a periodicity in each dimension that is less than or comparable with the shortest wavelength in a spectral range of interest. By virtue of the plurality of domes, the optoelectronic device achieves high performance. A solar cell having high energy-conversion efficiency, improved absorption over the spectral range of interest, and an improved acceptance angle is presented as an exemplary device.

14 SOLAR ENERGY↗

Metal-dielectric hybrid surfaces as integrated optoelectronic interfaces

An optoelectronic device has a hybrid metal-dielectric optoelectronic interface including an array of nanoscale dielectric resonant elements (e.g., nanopillars), and a metal film disposed between the dielectric resonant elements and below a top surface of the resonant elements such that the dielectric resonant elements protrude through the metal film. The device may also include an anti-reflection coating. The device may further include a metal film layer on each of the dielectric resonant elements.

36 MATERIALS SCIENCE↗

High bandgap III-V alloys for high efficiency optoelectronics

High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.

36 MATERIALS SCIENCE↗

High-efficiency and durable optoelectronic devices using layered 2D perovskites

A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.

14 SOLAR ENERGY↗

Carbon nanotubes in high-performance perovskite photovoltaics and other emerging optoelectronic applications

Here, we take a look back at the successful integration of carbon nanotubes (CNT) into high-efficiency solar cells based on metal-halide perovskites (MHPs). In addition to these successes, we identify critical questions and issues that remain to be addressed for the functionality of CNTs in MHP-based solar cells. Finally, we look forward toward potential future opportunities for CNT/MHP interfaces, in both new types of photovoltaic devices and other emerging optoelectronic applications.

14 SOLAR ENERGY↗

Molecular Optoelectronics (Final Technical Report)

The project developed new theoretical tools for analysis of nanodevices subjected to external optical and bias driving. Traditional theoretical techniques for molecular optoelectronics are either based on kinetic schemes or utilize quasiparticle description. The former fails to account for quantum mechanics of the system-bath interface and may fail qualitatively when used in open interacting systems. The latter is inconvenient in (usual for molecular optical spectroscopy) many body states description of the system. We developed a new technique - the Hubbard nonequilibrium Green's functions method - which allows to avoid shortcomings of standard theoretical approaches. The Hubbard NEGF was applied to analysis of experimental measurements of photoinduced current and bias-induced electroluminescence in STM molecular junctions. We also demonstrated practical usefulness of the Hubbard NEGF within newly proposed universal theory of current-induced forces for nonadiabatic molecular dynamics which generalizes celebrated Head-Gordon and Tully expression for electronic friction. Finally, following latest trends in laser techniques we studied local responses (local fluxes and local noise spectroscopy) of biased junctions as a source of information not accessible by total responses (total fluxes and noises) of the system.

30 DIRECT ENERGY CONVERSION↗

Multifunctional Optoelectronic-Spintronic Device Based on Hybrid Organometal Trihalide Perovskites

A novel “hybrid” optoelectronic–spintronic (O-S) device that contains an organometal trihalide perovskite (OTP)-based solar cell or light-emitting diode coupled to an inorganic spin valve is presented. The synergy between the OTP and spin valve components results in two new functionalities: nonlinear magnetophotoconductivity and hysteretic magnetoelectroluminescence.

36 MATERIALS SCIENCE↗

Synthesis, Photophysical, Electrochemical and Thermal Investigation of Anthracene Doped 2-Naphthol Luminophors and their Thin Films for Optoelectronic Devices

A series of novel luminophors of 2-naphthol by doping anthracene were prepared using conventional solid state reaction technique. The photophysical, electrochemical and thermal properties were studied by Fluorescence spectroscopy, XRD, SEM, TGA-DSC and by Cyclic Voltammetry techniques. The thin films were characterized by Fluorescence spectroscopy. XRD study of fine grained powders exhibited sharp peaks which specify crystallinity and homogeneity of the doped luminophors. The fluorescence spectra of doped 2-naphthol exhibited emission of anthracene at 413 nm i.e. blue emission with instantaneous fluorescence quenching of 2-NP due to excitation energy transfer (EET). Electrochemical data specify that the HOMO and LUMO energy levels of the synthesized luminophors are in the range of 5.55–5.71 eV and 3.03–3.24 eV, respectively. TGA-DSC study confirmed thermal stability of prepared luminophors. Hence, overall study proposes that these luminophors seems applicable to be used as n-type materials for Optoelectronic devices.

36 MATERIALS SCIENCE↗

Structural, Magnetic, and Optoelectronic Properties of CuMnSe{sub 2}-Chalcopyrite: DFT + U and Hybrid Functional Investigation

The work presented in this manuscript is a study of structural, magnetic, and optoelectronic properties of CuMnSe{sub 2}-chalcopyrite by FP-(L)APW + lo method using semilocal and hybrid functional. Structural properties such as cell parameters, bulk modulus, and its pressure derivative, as well as the cohesive energy and total energy of the unit cell were determined for the three magnetic phases (AFM, FM, and NM) from which it has been found that CuMnSe{sub 2}-chalcopyrite is ferromagnetic. The studied elastic properties confirm the mechanical stability of CuMnSe{sub 2} in its chalcopyrite structure. Electronic properties, such as the band gap energy, density of states, and charge density, and magnetic properties, such as Hubbard term estimation, magnetic moment, and polarization of the CuMnSe{sub 2}, have been predicted by several methods (GGA-PBEsol + U{sub eff}, GGA-PBEsol-(mBJ) + U{sub eff}, and hybrid functional). Optical properties such as the analysis of the dielectric function and the prediction of the refractive index and birefringence variations were also studied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Towards fully self-consistent optoelectronic simulation of planar devices

Photon recycling plays an important role in various optoelectronic devices, such as thin-film solar cells and intracavity double-diode structures presently studied for electroluminescent cooling. However, a complete description of photon recycling requires developing fully self-consistent simulation tools of photon and electronic charge transport in realistic device structures. In this paper, we describe a possible route towards such simulation tools in planar devices by combining the radiative transfer (RT) equation of photon transport with the drift-diffusion (DD) equations of electron and hole dynamics. We investigate the feasibility of the approach by selected proof-of-principle device studies. The results indicate that combining the RT and DD models not only yields the expected device characteristics, but also produces new insight into the pertinent local emission and absorption properties within the device structures. In particular, the model allows to accurately investigate how emission directivity and saturation affect the coupling coefficient in the double diode structures, showing that the main contribution to the coupling coefficient arises from the reflectivity of the top contact. For completeness, we also discuss how interference affects photon transport in resonant devices by an example calculation using the quantized fluctuational electrodynamics framework, paving way for self-consistent modeling tools that also account for wave-optical effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reduced Graphene Oxide–Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide–cadmium zinc sulfide (RGO–Cd{sub 0.5}Zn{sub 0.5}S) composite. The reduction in graphene oxide (GO), synthesis of Cd{sub 0.5}Zn{sub 0.5}S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV–Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO–CdZnS. An excellent photocurrent generation in RGO–CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

77 NANOSCIENCE AND NANOTECHNOLOGY↗