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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗
NASA NTRS1994

Theoretical Study of the Effect of an AlGaAs Double Heterostructure on Metal-Semiconductor-Metal Photodetector Performance

The impulse and square-wave input response of different GaAs metal-semiconductor-metal photodetector (MSM) designs are theoretically examined using a two dimensional drift- diffusion numerical calculation with a thermionic-field emission boundary condition model for the heterojunctions. The rise time and the fall time of the output signal current are calculated for a simple GaAs, epitaxially grown, MSM device as well as for various double-heterostructure barrier devices. The double heterostructure devices consist of an AlGaAs layer sandwiched between the top GaAs active, absorption layer and the bottom GaAs substrate. The effect of the depth of the AlGaAs layer on the speed and responsivity of the MSM devices is examined. It is found that there is an optimal depth, at fixed applied bias, of the AlGaAs layer within the structure that provides maximum responsivity at minimal compromise in speed.

Salem, Ali F.↗
NASA NTRS2000

Recent Developments and Applications of Quantum Well Infrared Photodetector Focal Plane Arrays

There are many applications that require long wavelength, large, uniform, reproducible, low cost, stable, and radiation-hard infrared (IR) focal plane arrays (FPAs). For example, the absorption lines of many gas molecules, such as ozone, water, carbon monoxide, carbon dioxide, and nitrous oxide occur in the wavelength region from 3 to 18 micron. Thus, IR imaging systems that operate in the long wavelength IR (LWIR) region (6 - 18 micron) are required in many space borne applications such as monitoring the global atmospheric temperature profiles, relative humidity profiles, cloud characteristics, and the distribution of minor constituents in the atmosphere which are being planned for future NASA Earth and planetary remote sensing systems. Due to higher radiation hardness, lower 1/f noise, and larger array size the GaAs based Quantum Well Infrared Photodetector (QWIP) FPAs are very attractive for such space borne applications compared to intrinsic narrow band gap detector arrays. In this presentation we will discuss the optimization of the detector design, material growth and processing that has culminated in realization of large format long-wavelength QWIP FPAs, portable and miniature LWIR cameras, holding forth great promise for myriad applications in 6-18 micron wavelength range in science, medicine, defense and industry. In addition, we will present some system demonstrations using broadband, two-color, and high quantum efficiency long-wavelength QWIP FPAs.

Gunapala, S. D.↗
NASA NTRS2000

8-9 and 14-15 Micron Two-Color 640x486 GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

An optimized long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE). This wafer was processed into several 640x486 format monolithically integrated 8-9 and 14-15 micron two color (or dual wavelength) QWIP focal plane arrays (FPAs). These FPAs were then hybridized to 640x486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into a liquid helium cooled dewar to perform electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micron detectors in the FPA have shown background limited performance (BLIP) at 70 K operating temperature, at 300 K background with f/2 cold stop. The 14-15 micron detectors of the FPA have reached BLIP at 40 K operating temperature at the same background conditions. In this presentation we discuss the performance of this long-wavelength dualband QWIP FPA in quantum efficiency, detectivity, noise equivalent temperature difference (NEAT), uniformity, and operability.

Gunapala, S. D.↗
NASA NTRS1997

Long-Wavelength 640 x 484 GaAs/Al(x)Ga(1-x)As Quantum Well Infrared Photodetector Focal Plane Array Camera

A 9 micrometers cutoff 640 x 484 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE.deltaT) of 43 mK has been achieved. In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NE.deltaT, uniformity, and operability.

Gunapala, S. D.↗
NASA NTRS1998

Long-Wavelength 640 x 486 GaAs/AlGaAs Quantum Well Infrared Photodetector Snap-Shot Camera

A 9-micrometer cutoff 640 x 486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NE.deltaT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature.

Gunapala, Sarath D.↗
NASA NTRS1998

Quantum Well Infrared Photodetectors (QWIPs) for Astronomy

In recent years, many research groups in the world have demonstrated large format Quantum Well Infrared Photodetector (QWIP) focal plane arrays for various thermal imaging applications. QWIPs as opposed to conventional low bandgap infrared detectors, are limited by thermionic dark current and not tunneling currents down to 30K or less. As a result the performance of QWIPs can be substantially improved (orders of magnitude) by cooling from 70K to 30K. Cooling does not induce any nonuniformity or 1/f noise in QWIP focal plane arrays. In this paper, we discuss the development of highly uniform long- wavelength QWIPs for astronomical applications.

Gunapala, S. D.↗
NASA NTRS1999

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Goldberg, A.↗
NASA NTRS2002

Modeling of InGaAsSb-Based Avalanche Photodetectors for 2-Micron Wavelengths

The main focus of this research is to study and evaluate the potential of InGaAsSb-AlGaAsSb based 2 micron avalanche photo-detectors. The photodetector contains a separate absorption and multiplication region (SAM) structure. The analysis has mainly been done to understand the electrical response characteristics of the devices existing at NASA, and to evaluate alternate structures proposed. Calculating the current flow for the existing detector structure, on the basis of its energy band diagram, is important. This analysis also helps to find shortcomings in the existing detector structure. It is shown that, unfortunately, the existing structure cannot lead to strong multiplication or voltage dependent gain. Two alternate structures are suggested, that could overcome the inherent flaws, and help achieve improved performance. These devices are obtained through modifications of the original structure, which include varying the doping levels, and changing the thicknesses of detector sub-regions. The results of our study are presented and discussed.

Joshi, Ravindra P.↗
NASA NTRS2002

Multi-Band GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Arrays

The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.

Bandara, S. V.↗
NASA NTRS2003

Toward the Development of Group III-V Photodetectors and Imaging Arrays

A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

Wickenden, Dennis K.↗
NASA NTRS2002

Multi-band quantum well infrared photodetectors

The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 mu m.

IR quantum well thermal imaging multi-spectral↗
NASA NTRS1997

Optical Coupling Mechnisms in Quantum Well Infrared Photodetectors

Light coupling systems, such as gratings are required becuase Quantum Well Infrared Photodetectors do not respond to normal incident light due to the quantum mechanical selection rules associated with intersubband transitions. The resolution of the photolithography and acuracy of the etching beomce key issues in producing smaller rating feature sizes expecially in shorter wavelengths.

Quantum Wells Intersubband infrared detectors grat↗
NASA NTRS1993

Very Long Wavelength InxGal-xAs/GaAs Quantum Well Infrared Photodetectors

We demonstrate the first long-wavelength (=20) quantum well infrared photodetector using non-lattice matched InGaAs/GaAs materials system. High optical gains (low capture probabilities) were achieved by using GaAs as a barrier material in this system.

long-wavelength quantum non-lattice GaAs detectors↗