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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Bulk photovoltaic effect in hexagonal LuMnO 3 single crystals

Hexagonal manganites, such as h-LuMnO 3 , are ferroelectric and have a narrow electronic band gap of ≈1.5eV. Here we report on the photoresponse of h-LuMnO 3 single crystals. It is found that the short circuit photocurrent density (J sc ) and the open circuit voltage (V oc ) are dependent on the direction of the polarization plane of a linearly polarized impinging light. Its angular dependence indicates the contribution of bulk photovoltaic effect to the short circuit photocurrent (J BPE ). It is also observed that a switchable drift photocurrent, originating from the depoling field of the ferroelectric and thus tunable(<10%) by its polarization direction, also contributes to J sc . Although its presence precludes accurate determination of the bulk photovoltaic tensor elements and Glass coefficients, some bounds can be established. The Glass coefficients are found to be significantly larger than those obtained in BiFeO 3 . We argue that the smaller band gap of h-LuMnO 3 , its distinctive bipyramidal crystal field, and electronic configuration (3d 4 vs 3d 5 ), account for the difference and suggest a path towards ferroelectrics of higher photoconversion efficiency.

14 SOLAR ENERGY↗
NASA NTRS1983

A review and summary of cell and module mismatch losses from theoretical and experimental studies

Studies on power loss due to photovoltaic (PV) cell and module parameter mismatch were reviewed. The losses result from the current voltage (I-V) characteristics of cells which vary over a manufactured lot. The peak power and the peak power I-V point vary from cell to cell. The largest parameter variation occurs in the cell photocurrent generation and the most significant loss occurs in series connections since all cells are essentially limited by the lowest photocurrent. Most theoretical studies address only photocurrent variation effects, which consider shunt and series resistance, ideality factor and saturation current to be comparatively insignificant. One study is identified which specifically configured the study of mismatch loss effects. Experimental results consist of estimates based on limited data not taken from specially configured tests.

Lambarski, T. J.↗
NASA NTRS1990

Resonant tunneling IR detectors

Researchers propose a novel semiconductor heterojunction photodetector which would have a very low dark current and would be voltage tunable. A schematic diagram of the device and its band structure are shown. The two crucial components of the device are a cathode (InGaAs) whose condition band edge is below the conduction band edge of the quantum wells and a resonant tunneling filter (GaAs-AlGaAs). In a standard resonant tunneling device the electrodes are made of the same material as the quantum wells, and this device becomes highly conducting when the quantum levels in the wells are aligned with the Fermi level in the negatively biased electrode. In contrast, the researchers device is essentially non-conducting under the same bias conditions. This is because the Fermi Level of the cathode (InGaAs) is still well below the quantum levels so that no resonant transport occurs and the barriers (AlGaAs) effectively block current flow through the device. However, if light with the same photon energy as the conduction-band discontinuity between the cathode and the quantum wells, E sub c3-E sub c1, is shone on the sample, free carriers will be excited to an energy corresponding to the lowest quantum level in the well closest to the cathode (hv plue E sub c1 = E sub o). These electrons will resonantly tunnel through the quantum wells and be collected as a photocurrent in the anode (GaAs). To improve the quantum efficiency, the cathode (InGaAs) should be very heavily doped and capped with a highly reflective metal ohmic contact. The thickness of the device should be tailored to optimize thin film interference effects and afford the maximum absorption of light. Because the device relies on resonant tunneling, its response should be very fast, and the small voltages needed to change the responsivity should allow for very high frequency modulation of the photocurrent. In addition, the device is tuned to a specific photon energy so that it can be designed to detect a fairly narrow range of wavelengths. This selectivity is important for reducing the photocurrent due to spurious light sources.

Woodall, Jerry M.↗
NASA NTRS1991

Temperature dependence of the transient photoconductive response in stretched trans-polyacetylene films with below-gap excitation

The temperature dependence of the picosecond photocurrent with below-gap excitation (1.06 microns) has been measured for a highly oriented form of transpolyacetylene. The one-dimensional picosecond photocurrent is independent of temperature. The three-dimensional picosecond photocurrent is temperature dependent with an activation energy of 63 meV. These results demonstrate the photoproduction of nonlinear charged carriers (solitons and polarons) at energies that are below the principal interband absorption edge.

Walser, A. D.↗
NASA NTRS2011

Sub-Shot Noise Power Source for Microelectronics

Low-current, high-impedance microelectronic devices can be affected by electric current shot noise more than they are affected by Nyquist noise, even at room temperature. An approach to implementing a sub-shot noise current source for powering such devices is based on direct conversion of amplitude-squeezed light to photocurrent. The phenomenon of optical squeezing allows for the optical measurements below the fundamental shot noise limit, which would be impossible in the domain of classical optics. This becomes possible by affecting the statistical properties of photons in an optical mode, which can be considered as a case of information encoding. Once encoded, the information describing the photon (or any other elementary excitations) statistics can be also transmitted. In fact, it is such information transduction from optics to an electronics circuit, via photoelectric effect, that has allowed the observation of the optical squeezing. It is very difficult, if not technically impossible, to directly measure the statistical distribution of optical photons except at extremely low light level. The photoelectric current, on the other hand, can be easily analyzed using RF spectrum analyzers. Once it was observed that the photocurrent noise generated by a tested light source in question is below the shot noise limit (e.g. produced by a coherent light beam), it was concluded that the light source in question possess the property of amplitude squeezing. The main novelty of this technology is to turn this well-known information transduction approach around. Instead of studying the statistical property of an optical mode by measuring the photoelectron statistics, an amplitude-squeezed light source and a high-efficiency linear photodiode are used to generate photocurrent with sub-Poissonian electron statistics. By powering microelectronic devices with this current source, their performance can be improved, especially their noise parameters. Therefore, a room-temperature sub-shot noise current source can be built that will be beneficial for a very broad range of low-power, low-noise electronic instruments and applications, both cryogenic and room-temperature. Taking advantage of recent demonstrations of the squeezed light sources based on optical micro-disks, this sub-shot noise current source can be made compatible with the size/power requirements specific of the electronic devices it will support.

Strekalov, Dmitry V.↗
DOE OSTI2023

Long carrier diffusion length in two-dimensional lead halide perovskite single crystals

Ruddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high-performance optoelectronic devices. In this work, we report a long in-plane carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7–14μm are observed when the number of PbI 6 –2 octahedra between organic spacers increases from 1 to 3. Using detailed light intensity and electric-field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements, where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation, which overcomes strong excitonic effects. In conclusion, our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Efficient Broadband Terahertz Generation by Above‐Band‐Gap Excitation of the Pyroelectric ZnSnN 2

Terahertz (THz) radiation is a powerful probe of low-energy excitations in all phases of matter. However, it remains a challenge to find materials that efficiently generate THz radiation in a broad range of frequencies following optical excitation. Here, we investigate a pyroelectric material, ZnSnN 2 , and find that its above-band-gap excitation results in the efficient formation of an ultrafast photocurrent generating THz radiation. The resulting THz electric field spans a frequency range from below 1 THz to above 30 THz. The results suggest that the photocurrent is primarily driven by an ultrafast pyroelectric effect where the photo-excited carriers screen the spontaneous electric polarization of ZnSnN 2 . Strong structural disorder reduces the photocarrier lifetime significantly and, thus, enables broadband operation. ZnSnN2 shows a similar THz-emitter performance as the best spintronic THz emitters regarding bandwidth and amplitude. The study unveils the large potential of pyroelectric materials as efficient and broadband THz emitters with built-in bias fields.

36 MATERIALS SCIENCE↗
DOE OSTI2024

In Situ Exploration of Dipole Field Effects on Weak Hysteresis in 3D/2D Perovskites

This research delves into the effects of 2D layers on the functionality of 3D perovskite using lock-in amplifier-based in situ surface photovoltage (SPV) and its phase spectroscopy, with an emphasis on elucidating the connection between the tuning of dipole moments and the photocurrent hysteresis. Conventionally, the SPV of a perovskite/hole transport layer is observed to diminish as positive bias escalates. However, this trend is reversed in the case of 3D perovskite samples, where an augmentation in SPV is noted under positive bias. Notably, 3D/2D perovskite structures initially show a decrease, then an increase in SPV as bias intensifies, a phenomenon more pronounced with larger dipole moments in 2D. However, there is no linear relationship between the dipole moment and the hysteresis factor. Furthermore, using in situ light-chopping-frequency-modulated SPV and Kelvin Probe Force Microscopy, it is revealed that the dipole fields of 2D layers can hinder ion migration. This leads to efficient hole transfer and minimal photocurrent hysteresis in 3D/2D perovskites, providing strong evidence for the underlying cause of hysteresis. Additionally, these findings suggest intricate interplays among the external electric field, interface dipole moments, and surface photovoltaics, offering significant insights into perovskite optoelectronics.

3D/2D perovskite↗
DOE OSTI2020

Retarded Charge-Carrier Recombination in Photoelectrochemical Cells from Plasmon-Induced Resonance Energy Transfer

N-type metal oxides such as hematite (α-Fe 2 O 3 ) and bismuth vanadate (BiVO 4 ) are promising candidate materials for efficient photoelectrochemical water splitting; however, their short minority carrier diffusion length and restricted carrier lifetime result in undesired rapid charge recombination. In this paper, a 2D arranged globular Au nanosphere (NS) monolayer array with a highly ordered hexagonal hole pattern (hereafter, Au array) is introduced onto the surface of photoanodes comprised of metal oxide films via a facile drying and transfer-printing process. Through plasmon-induced resonance energy transfer, the Au array provides a strong electromagnetic field in the near-surface area of the metal oxide film. The near-field coupling interaction and amplification of the electromagnetic field suppress the charge recombination with long-lived photogenerated holes and simultaneously enhance the light harvesting and charge transfer efficiencies. Consequently, an over 3.3-fold higher photocurrent density at 1.23 V versus reversible hydrogen electrode (RHE) is achieved for the Au array/α-Fe 2 O 3 . Furthermore, the high versatility of this transfer printing of Au arrays is demonstrated by introducing it on the molybdenum-doped BiVO 4 film, resulting in 1.5-fold higher photocurrent density at 1.23 V versus RHE. The tailored metal film design can provide a potential strategy for the versatile application in various light-mediated energy conversion and optoelectronic devices.

2D pattern array↗
DOE OSTI2024

Identifying and Amplifying the Spontaneously Formed Photo‐Charge Contribution in Opaque and Semitransparent Organic Photovoltaics

Abstract Spontaneous photo‐charge (SP) generation within the non‐fullerene (NFA) bulk helps avoid exciton (EX) related loss as compared to the traditional heterojunction route in organic solar cells (OSCs). Unfortunately, the promising SP utilization attracts little attention at this time due to the lack of knowledge on its specific contribution to the photovoltaic performance and rational optimization in high‐efficiency devices. To fill the gap, the NFAs’ SP characteristics are related with their photocurrent loss and power conversion efficiency (PCE) in state‐of‐the‐art materials. Though higher SP population is good for efficient EX utilization, it simultaneously acts as an additional photo‐charge recombination channel. The former can be further enhanced by increasing the NFAs’ crystallinity with preferred lamellar growth, and the latter can be suppressed via electric doping. With the aid of the two‐step optimization strategy, the total photocurrent loss is reduced from 14.4% to 4.8%, accompanying with PCE increment from 16.9% to 18.5%. The SP utilization strategy is finally applied in the semitransparent OSCs (ST‐OSCs), due to its less heterojunction area sensitive photo‐charge generation characteristic. A light utilization efficiency (LUE) is then increased from 3.21% to 3.77%. The findings highlight the pursue of efficient SP utilization as a new design philosophy in future OSCs’ progresses.

Chemistry↗
DOE OSTI2023

Correlation of Broad Absorption Band with Small Singlet‐Triplet Energy Gap in Organic Photovoltaics

Abstract Organic photovoltaics (OPV) are one of the most effective ways to harvest renewable solar energy, with the power conversion efficiency (PCE) of the devices soaring above 19 % when processed with halogenated solvents. The superior photocurrent of OPV over other emerging photovoltaics offers more opportunities to further improve the efficiency. Tailoring the absorption band of photoactive materials is an effective way to further enhance OPV photocurrent. However, the field has mostly been focusing on improving the near‐infrared region photo‐response, with the absorption shoulders in short‐wavelength region (SWR) usually being neglected. Herein, by developing a series of non‐fullerene acceptors (NFAs) with varied side‐group conjugations, we observe an enhanced SWR absorption band with increased side‐group conjugation length. The underpinning factors of how molecular structures and geometries improve SWR absorption are clearly elucidated through theoretical modelling and crystallography. Moreover, a clear relationship between the enhanced SWR absorption and reduced singlet‐triplet energy gap is established, both of which are favorable for the OPV performance and can be tailored by rational structure design of NFAs. Finally, the rationally designed NFA, BO‐TTBr, affords a decent PCE of 18.5 % when processed with a non‐halogenated green solvent.

Chemistry↗
DOE OSTI2024

Evidence of hot carrier extraction in metal halide perovskite solar cells

The presence of hot carriers is presented in the operational properties of an (FA,Cs)Pb(I, Br, Cl) 3 solar cell at ambient temperatures and under practical solar concentration. Albeit, in a device architecture that is not suitably designed as a functional hot carrier solar cell. At 100 K, clear evidence of hot carriers is observed in both the high energy tail of the photoluminescence spectra and from the appearance of a nonequilibrium photocurrent at higher fluence in light J–V measurements. At room temperature, however, the presence of hot carriers in the emission at elevated laser fluence is shown to compete with a gradual red shift in the PL peak energy as photoinduced halide segregation begins to occur at higher lattice temperature. The effects of thermionic emission of hot carriers and the presence of a nonequilibrium carrier distribution are also shown to be distinct from simple lattice heating. In conclusion, this results in large unsaturated photocurrents at high powers as the Fermi distribution exceeds that of the heterointerface controlling carrier transport and rectification.

14 SOLAR ENERGY↗
DOE OSTI2022

Investigation on the AgPt and AgPd hybrid alloy nanoparticles (HANPs) for the hybrid MoS 2 /ZnO/HANP UV photodetector application

We report hybrid photodetectors made of two or more nanomaterial components can offer the high potential for advanced photodetection applications with enhanced light absorption, improved efficiency and structural tunability. A hybrid UV photodetector (PD) configuration incorporating the plasmonic hybrid alloy nanoparticles (HANP), ZnO quantum dots (QDs) and MoS 2 nanoflakes, namely MoS2/ZnO/HANP PD, is demonstrated. The optimized MoS 2 /ZnO/HANP PD exhibits a high photocurrent of 5.66 mA at 0.34 mW/mm 2 under 385 nm illumination with two orders of improvement from the bare ZnO, which is one of the highest photocurrents by the ZnO-based PDs. It also demonstrates high figure-of-merits with the responsivity of 14,523 mA/W, detectivity of 8.13 x 10 11 jones, and external quantum efficiency (EQE) of 4,680 %, outperforming most of the ZnO-based hybrid architectures. The enhanced photoresponse is primarily attributed to the significantly enhanced hot electron generation by the AgPd HANPs and photocarrier collection through the ZnO QD layer. MoS 2 nanoflakes also provide additional photon absorption sites and boost the photo-carrier transfer process. HANPs are grown by adapting a dual-step solid-state dewetting process (SSD) approach and the superiority of AgPd HANPs is confirmed by systematic investigation, FDTD simulation and comparison of AgPt and AgPd HANPs.

MoS2↗
DOE OSTI2020

The significance of the local structure of cobalt-based catalysts on the photoelectrochemical water oxidation activity of BiVO 4

The local structures of the water oxidation catalysts play an important role in reaction kinetics and the performance of the photoanodes. In this study, we deposited cobalt-based catalysts on nanoporous BiVO 4 with controlled thicknesses by atomic layer deposition (ALD). Despite the similar oxidation states of cobalt in all depositions, different water oxidation activities in neutral pH conditions were observed. Here, a dramatic photocurrent raise, lowered kinetic overpotential, and smaller charge transfer resistance across the photoanode/electrolyte interface were achieved when a uniform ultrathin Co(OH) 2 layer was formed on BiVO 4 . Photocurrent density for water oxidation showed a 95% enhancement at 0.6 V vs. RHE when the catalyst was in the form of Co(OH) 2 , while an 80% increase was obtained for CoO. Ideal coordination of Co(OH) 2 on hydroxylated BiVO 4 surface assists the charge transfer between the electrolyte and BiVO 4 without increasing surface recombination. The results of this study emphasize the importance of controlling the local structure of the catalysts in the performance of the water splitting photoanodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

A hybrid CoOOH-rGO/Fe 2 O 3 photoanode with spatial charge separation and charge transfer for efficient photoelectrochemical water oxidation

As a promising photoanode for photoelectrochemical (PEC) water oxidation, hematite (Fe 2 O 3 ) still suffers from poor charge mobility and serious charges recombination and sluggish surface oxygen evolution kinetics. Herein, a hybrid photoanode of cobalt (oxy)hydroxide coupled with reduced graphene oxide modified Fe 2 O 3 (CoOOH-rGO/Fe 2 O 3 ) is well crafted by a facile hydrothermal synthesis with a chelation-mediated in-situ growth method. Morphology characterizations indicate rGO forms the internal network among isolated Fe 2 O 3 and CoOOH nanosheets distribute on the terminal of Fe 2 O 3 , forming a spatial separated nanostructure. The resultant CoOOH-rGO/Fe 2 O 3 exhibits an obviously reduced onset potential of ca. 150 mV and a significantly enhanced photocurrent density of 2.56 mA cm -2 at 1.23 V, which is ca. 3.3 times higher than that of bare Fe 2 O 3 . Especially, the functions of rGO and CoOOH are studied by using electrochemical impedance spectroscopy, open circuit potentials and intensity modulated photocurrent spectroscopy. It is found rGO act as conductive network which facilitates the electron transfer from Fe 2 O 3 to the substrate, while CoOOH evidently passivate the surface states of Fe 2 O 3 , improve charge separation and provide catalytic active sites for water oxidation. Additionally, the spatial charge separation and charge transfer caused by CoOOH and rGO are responsible for the enhanced PEC performance of water oxidation. The rational design and the facile fabrication strategy exhibit great potential to be used for other PEC system with great efficiency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Combined Experimental and Theoretical Investigations of n-Type BiFeO 3 for Use as a Photoanode in a Photoelectrochemical Cell

Combined experimental and theoretical investigations were performed to evaluate the potential of n-type BiFeO 3 as a photoanode. While previous experimental and theoretical studies on BiFeO 3 mainly focused on its ferroelectric properties, several studies have reported the advantages of BiFeO 3 as a photoelectrode for solar water splitting (e.g. bandgap energy and band edge positions relative to water reduction and oxidation potentials). However, the photoelectrochemical properties of n-type BiFeO 3 have not yet been thoroughly investigated. In our experimental investigation, we developed an electrodeposition-based synthesis to prepare uniform n-type BiFeO 3 thin-film electrodes. Furthermore, using a heat treatment under a N 2 environment, we intentionally introduced additional oxygen vacancies into the pristine n-type BiFeO 3 electrodes to increase the majority carrier density. The bandgaps, flatband potentials, photocurrent onset potentials, photocurrent generation, and photoelectrochemical stabilities of the pristine and N 2 -treated BiFeO 3 photoanodes were investigated comparatively to improve our understanding of BiFeO 3 photoanodes and to examine the effect of oxygen vacancies on the photoelectrochemical properties of BiFeO 3 . In our theoretical investigation, we performed first-principles calculations and demonstrated the formation of a small polaron when an extra electron was introduced into the BiFeO 3 lattice. Changes in electronic states cause by the small polaron formation were carefully investigated. We also examined the effects of oxygen vacancies on electron polaron formation and carrier concentration in BiFeO 3 . Using charge formation energy calculations and referencing charge transition levels to the free electron polaron level instead of to the conduction band minimum, we showed that the oxygen vacancy is capable of serving as a donor to enhance the carrier concentration of BiFeO 3 . Furthermore, our theoretical results agree well with our experimental findings. Together, the new experimental and theoretical results and discussion provided in this study have considerably improved our understanding of n-type BiFeO 3 as a photoanode.

25 ENERGY STORAGE↗
DOE OSTI2023

Investigation of Electron Extraction and Protection Layers on Cu 2 O Photocathodes

Many semiconductor photoelectrodes used for solar fuel production require the addition of buffer and protection layers to enhance their solar-to-fuel conversion efficiency and long-term stability. For example, Cu 2 O, which is the most efficient oxide-based photocathode but suffers from photocorrosion, has been assembled with various buffer and protection layers to suppress photocorrosion and use more photoexcited electrons for useful reactions such as water reduction to H 2 . However, the abilities of various buffer and protection layers to extract electrons from Cu 2 O have never been directly evaluated. Instead, their abilities were estimated based on the photocurrent for water reduction after adding a hydrogen evolution catalyst on top of them. In these evaluations, as the photocurrent is affected not only by the buffer or protection layer but also by the catalyst, the ability of the buffer or protection layer to extract electrons from Cu 2 O could not be accurately determined or compared. Here, in this study, we demonstrate that 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl (TEMPOL), whose reduction rate is faster than the photocorrosion rate of Cu 2 O, can be used as an effective electron scavenger to directly evaluate any change caused by a buffer or protection layer in electron-hole separation in Cu 2 O. In particular, we compared the performances of ZnO and TiO 2 layers on Cu 2 O for extracting electrons and suppressing photocorrosion. We also compared the performances of TiO 2 layers prepared by electrodeposition and atomic layer deposition (ALD) to show that the deposition method can make a striking impact on the performance of the same TiO 2 because it can affect the critical characteristics of the layer (e.g., defect levels, conductivity, interfacial atomic arrangements) that govern interfacial charge transfer in multilayer photoelectrodes.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electronic Coherence and Coherent Dephasing in the Optical Control of Electrons in Graphene

Electronic coherence is of utmost importance for the access and control of quantum-mechanical solid-state properties. Using a purely electronic observable, the photocurrent, we measure a lower bound of the electronic coherence time of 22 ± 4 fs in graphene. The photocurrent is ideally suited to measure electronic coherence, as it is a direct result of coherent quantum-path interference, controlled by the delay between two ultrashort two-color laser pulses. The maximum delay for which interference between the population amplitude injected by the first pulse interferes with that generated by the second pulse determines the electronic coherence time. In particular, numerical simulations reveal that the experimental data yields a lower bound on the electronic coherence time, masked by coherent dephasing due to the broadband absorption in graphene. Overall, we expect that our results will significantly advance the understanding of coherent quantum control in solid-state systems ranging from excitation with weak fields to strongly driven systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗