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A joint spectroscopy and ab initio study identifies electronic orbitals of valence tautomeric complexes on different semiconducting polymers, including a spin-polarized ligand-to-metal charge transfer state that spans the entire molecular plane.
Spontaneous polarization as large as ~28 μC/cm 2 was recently observed around the dislocation cores in non-polar SrTiO 3 bulk crystals, and its origin was attributed to the flexoelectric effect, i.e., polarization induced by strain gradients. However, the roles of flexoelectricity, relative to other electromechanical contributions, and the nature of dislocations, i.e., edge vs screw dislocations in the induced polarization, are not well understood. In this work, we study the role of flexoelectricity in inducing polarization around three types of dislocation cores in SrTiO 3 : b= a(100) edge dislocation, b= a(110) edge dislocation, and b= a(010) screw dislocation, where b is the Burgers vector. For the edge dislocations, polarization can be induced by electrostriction alone, while flexoelectricity is essential for stabilizing the symmetric polarization pattern. The shear component of the flexoelectric tensor has a dominant effect on the magnitude and spatial distribution of the flexoelectric polarization. In contrast, no polarization is induced around the b= a(010) screw dislocation through either electrostriction or flexoelectricity. Finally, our findings provide an in-depth understanding of the role of flexoelectricity in inducing polarization around dislocation cores and offer insights into the defect engineering of dielectric/ferroelectric materials.
Polaritons in metals, semimetals, semiconductors, and polar insulators can allow for extreme confinement of electromagnetic energy, providing many promising opportunities for enhancing typically weak light-matter interactions such as multipolar radiation, multiphoton spontaneous emission, Raman scattering, and material nonlinearities. These extremely confined polaritons are quasielectrostatic in nature, with most of their energy residing in the electric field. As a result, these “electric” polaritons are far from optimized for enhancing emission of a magnetic nature, such as spin relaxation, which is typically many orders of magnitude slower than corresponding electric decays. Here, we take concepts of “electric” polaritons into magnetic materials, and propose using surface magnon polaritons in negative magnetic permeability materials to strongly enhance spin relaxation in nearby emitters. Specifically, we provide quantitative examples with MnF 2 and FeF 2 , enhancing spin transitions in the THz spectral range. In this work we find that these magnetic polaritons in 100-nm thin films can be confined to lengths over 10 000 times smaller than the wavelength of a photon at the same frequency, allowing for a surprising 12 orders of magnitude enhancement in magnetic dipole transitions. This takes THz spin-flip transitions, which normally occur at timescales on the order of a year, and forces them to occur at sub-ms timescales. Our results suggest an interesting platform for polaritonics at THz frequencies, and more broadly, a way to use polaritons to control light-matter interactions.
Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this paper, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.
Chiral metal halide perovskite semiconductors (CMHS) are fascinating semiconductors with unique chiroptical properties and spin-polarized charge transport. Achieving long spin lifetimes and high carrier mobility concurrently is essential to realize the true potential of CMHS in manipulating charge, spin, and light. While conventional monolayer n = 1 CMHS possess appreciable anisotropy factors of circular dichroism (g CD ) and photoluminescence (g lum ), imparting chirality to quasi-2D CMHS (n > 1) with enhanced carrier mobilities is underexplored. Herein, we systematically investigate the layer number (n-value) dependence and emergent trade-offs in chiroptical properties, spin-relaxation times, and carrier mobilities in chiral quasi-2D (R/S-MPEA) 2 MA n-1 Pb n I 3n+1 single crystals and thin films (R/S-MPEA: R/S-β-methylphenylethylammonium; MA: methylammonium; n = 1–3). Films with n = 2 exhibited the highest g CD of 8 × 10 –3 , an order of magnitude larger than their n = 1 and n = 3 counterparts. On the other hand, n = 3 films demonstrated enhanced spin lifetimes up to 15 ps along with increased carrier mobility up to 11.6 cm 2 V –1 s –1 . As a result, photodiode-type photodetectors based on n = 3 CMHS reveal high specific detectivity and superior discrimination of circularly polarized light, outperforming n = 1 and 2. These findings highlight the potential of quasi-2D CMHS as tunable, high-performance platforms with longer spin lifetime and diffusion length, enabling new functionalities.
Quantum calculations show that ethylenediamine and crown ethers polarize and displace valence electrons of alkali metals to the periphery of the formed complex. The nature of the building blocks of expanded metals and electrides is discussed.
Understanding electron-phonon coupling in noncentrosymmetric materials is critical for controlling the internal fields which give rise to Rashba interactions. We apply time- and angle-resolved photoemission spectroscopy (trARPES) to study coherent phonons in the surface and bulk regions of the polar semiconductor BiTeCl. Aided by \textit{ab initio} calculations, our measurements reveal the coupling of out-of-plane $A_1$ modes and an in-plane $E_2$ mode. By considering how these modes modulate the electric dipole moment in each unit cell, we show that the polar $A_1$ modes are more effectively screened in the metallic surface region, while the non-polar $E_2$ mode couples in both regions. Finally, in addition to informing strategies to optically manipulate Rashba interactions, this work has broader implications for the behavior of electron-phonon coupling in systems characterized by inhomogeneous dielectric environments.
Spin-polarized electron beams are important for nuclear physics research performed at electron accelerators. Over many years, beam polarization has increased significantly, from 35% provided by unstrained bulk GaAs, to ~ 75% using single strained-layer GaAs, to ~ 90% using strained-superlattice GaAs photocathodes grown using molecular beam epitaxy (MBE). Commercial vendors once provided high-polarization photocathodes but today there is little interest in supporting this small market. Here, we report successful results fabricating high polarization GaAs/GaAsP superlattice photocathodes using metal organic chemical vapor deposition (MOCVD), a method dismissed by some as not providing sufficient control of layer thickness and uniformity. The best samples provide spin polarization greater than 90% and quantum efficiency (QE) exceeding 2%, with QE enhanced using a distributed Bragg reflector (DBR) incorporated into the structure. Together, these quantities represent some of the best results ever reported for high polarization photocathodes. Enhanced QE via DRB is very important for future work at CEBAF/Jefferson Lab because it will simplify the production of polarized electron beams at milliampere current needed for a polarized positron source.
1D organic metal halide hybrids (OMHHs) exhibit strongly anisotropic optical properties, highly efficient light emission, and large Stokes shift, holding promise for novel photodetection and lighting applications. However, the fundamental mechanisms governing their unique optical properties and in particular the impacts of surface effects are not understood. Herein, 1D C 4 N 2 H 14 PbBr 4 by polarization‐dependent time‐averaged and time‐resolved photoluminescence (TRPL) spectroscopy, as a function of photoexcitation energy, is investigated. Surprisingly, it is found that the emission under photoexcitation polarized parallel to the 1D metal halide chains can be either stronger or weaker than that under perpendicular polarization, depending on the excitation energy. The excitation‐energy‐dependent anisotropic emission is attributed to fast surface recombination, supported by first‐principles calculations of optical absorption in this material. The fast surface recombination is directly confirmed by TRPL measurements, when the excitation is polarized parallel to the chains. The comprehensive studies provide a more complete picture for a deeper understanding of the optical anisotropy in 1D OMHHs.
Rechargeable aqueous batteries based on metallic anodes hold tremendous potential of high energy density enabled by the combination of relatively low working potential and large capacity while retaining the intrinsic safety nature and economical value of aqueous systems; However, the realization of these promised advantages relies on the identification of an ideal metal anode chemistry with all these merits. In this review, the emerging Sn metal anode chemistry is examined as such an anode candidate in both acidic and alkaline media, where the inertness of Sn toward hydrogen evolution, flat low voltage profile, and low polarization make it a unique metal anode for aqueous batteries. From a panoramic viewpoint, the key challenges and detrimental issues of Sn metal batteries are discussed, including dead Sn formation, self‐discharge, and electrolyte degradation, as well as strategies for mitigating these issues by constructing robust Sn anodes. New design approaches for more durable and reliable Sn metal batteries are also discussed, with the aim of fully realizing the potential of Sn anode chemistry.
Abstract Ferroelectricity, the electrostatic counterpart to ferromagnetism, has long been thought to be incompatible with metallicity due to screening of electric dipoles and external electric fields by itinerant charges. Recent measurements, however, demonstrated signatures of ferroelectric switching in the electrical conductance of bilayers and trilayers of WTe 2 , a semimetallic transition metal dichalcogenide with broken inversion symmetry. An especially promising aspect of this system is that the density of electrons and holes can be continuously tuned by an external gate voltage. This degree of freedom enables measurement of the spontaneous polarization as free carriers are added to the system. Here we employ capacitive sensing in dual-gated mesoscopic devices of bilayer WTe 2 to directly measure the spontaneous polarization in the metallic state and quantify the effect of free carriers on the polarization in the conduction and valence bands, separately. We compare our results to a low-energy model for the electronic bands and identify the layer-polarized states that contribute to transport and polarization simultaneously. Bilayer WTe 2 is thus shown to be a fully tunable ferroelectric metal and an ideal platform for exploring polar ordering, ferroelectric transitions, and applications in the presence of free carriers.
Coupling ordinary metals with topological Bi 2 Se 3 can instigate the long-range migration of the spin-polarized Dirac states. Instead, for trivial metallic VSe 2 films on Bi 2 Se 3 , topological and trivial Rashba-type interface states emerge, each strongly localized at the VSe 2 /Bi 2 Se 3 interface. Their rapidly decaying spectral weights are uncovered by thickness-dependent band mappings of VSe 2 films and replicated by a phenomenological first-principles model of the spectral function. In this work, the results are pertinent to spintronic devices requiring spin transmission across metal/topological insulator interfaces.
In this study, we have used the first-principle approaches of density functional theory to determine the electronic and magnetic performances related to spintronics applications of titanium (Ti)-substituted SrS such as Sr{sub 1−x}Ti{sub x}S at concentration x = 0.125. The results of electronic and magnetic properties by using TB–mBJ potential revealed that Sr{sub 0.875}Ti{sub 0.125}S compound is half-metallic ferromagnetic with a half-metallic gap and a spin polarization of 100%. The ferromagnetic nature of Sr{sub 0.875}Ti{sub 0.125}S material is confirmed by the ferromagnetic coupling between magnetic moments of Ti, Sr and S atoms. The total magnetic moment of integer Bohr magneton of 2 μ{sub B} and the large half-metallic gap of 1.245 suggest that this compound is a true half-metallic ferromagnet.
Abstract The manipulation of magnetism through strain control is a captivating area of research with potential applications for low‐power devices that do not require dissipative currents. Recent investigations of insulating multiferroics have unveiled tunable relationships among polar lattice distortions, Dzyaloshinskii–Moriya interactions (DMI), and cycloidal spin orders that break inversion symmetry. These findings have raised the possibility of utilizing strain or strain gradient to manipulate intricate magnetic states by changing polarization. However, the effectiveness of manipulating cycloidal spin orders in “metallic” materials with screened magnetism‐relevant electric polarization remains uncertain. In this study, the reversible strain control of cycloidal spin textures in a metallic van der Waals magnet, Cr 1/3 TaS 2 , through the modulation of polarization and DMI induced by strain is demonstrated. With thermally‐induced biaxial strains and isothermally‐applied uniaxial strains, systematic manipulation of the sign and wavelength of the cycloidal spin textures is realized, respectively. Additionally, unprecedented reflectivity reduction under strain and domain modification at a record‐low current density are also discovered. These findings establish a connection between polarization and cycloidal spins in metallic materials and present a new avenue for utilizing the remarkable tunability of cycloidal magnetic textures and optical functionality in van der Waals metals with strain.
Polyolefins are by far the most ubiquitous industrially produced polymers and are primarily produced by early transition metal catalysts. These catalysts are not functional group tolerant, and copolymerization of ethylene and polar vinyl monomers is quite challenging. Furthermore, early metal catalysts convert ethylene to linear polyethylene, and introduction of branches requires addition of comonomers. In this Account, we describe our efforts in designing and implementing new Pd(II) and Ni(II) olefin polymerization catalysts based on mechanistic understanding of the chain growth process. Here, the original hindered nickel- and palladium-aryl-substituted diimine complexes were discovered in 1995. The key to the success of these now “classic” systems in generating high polymers rather than dimers or oligomers was realizing that incorporation of ortho-disubstituted aryl groups partially blocks the axial sites of the metal and thus retards the rate of chain transfer relative to propagation. Two key features of these late metal catalysts distinguish them from early metal complexes. First, they tolerate certain functional groups, which allows copolymerization of olefins with polar comonomers. Second, they can form a branched polymer from ethylene without the need to add α-olefin comonomers. Importantly, for nickel catalysts, branching levels can be modulated by changing reaction conditions, such as temperature and monomer pressure.
Coating polar dielectrics with thin film vanadium dioxide (VO 2 ) enables one to exploit the temperature-dependent phase transition within VO 2 to actively tune and modulate surface phonon polaritons at mid-infrared. However, controlling the behavior of such systems requires intimate knowledge of the temperature-dependent optical constants of VO 2 , which depend greatly on the growth conditions and substrate material. Here, in this work, we accurately determine the complex optical constants of VO 2 on polar dielectrics across the insulator-to-metal phase transition (IMT) using only normal incident reflectance spectra by analyzing the reflectance with Kramers–Kronig relations and thin film Fresnel equations. This non-ellipsometry technique offers an advantage in determining the refractive index using a standard infrared spectrometer.
Transition metal complexes containing platinum(II) are of substantial interest for their rich photophysics, biomedical applications, and catalytic function. Nuclear magnetic resonance (NMR) spectra of the spin-1/2 isotope, 195Pt, offer detailed insights into the molecular structures of closed-shell Pt(II) complexes, including solvent effects. However, the sensitivity of 195Pt NMR is mediocre, and its NMR spectra are typically complex. As a result, 1H NMR spectra are used as the primary characterization tool for Pt(II)-based molecules, relying on J-coupling to the 195Pt nucleus to provide structural information from the resulting satellite peaks. In efforts to significantly improve the information content from 1H NMR spectroscopy in a Pt(II)-containing molecule, we utilize [Pt2H2(μ-H)(μ-dppm)2]PF6, where dppm is bis(diphenylphosphino)methane, and leverage its established photoactivity with UV light and H2 for para-hydrogen-induced polarization (PHIP) to enhance the resultant NMR signals, revealing numerous 195Pt J-couplings. Moreover, we investigate direct solvent hyperpolarization effects, as well as the indirect effects of solvent on the various observed J-coupling constants in the Pt species, demonstrating correlations with both Lewis basicity and dielectric constant.
Half metals are ferromagnets hosting spin-polarized conducting carriers and are crucial for spintronics applications. The chromium spinel HgCr 2 Se 4 represents a unique type of half-metal, which features a half-metal to semiconductor transition (HMST) and exhibits colossal magnetoresistance (CMR) across the ferromagnetic-paramagnetic (FM-PM) transition. Here, using angle-resolved photoemission spectroscopy, we find that the Fermi surface of n-type HgCr 2 Se 4 (n–HgCr 2 Se 4 ) consists of a single electron pocket which moves above the Fermi level (E F ) upon the FM-PM transition, leading to the HMST. Such a Lifshitz transition manifests a giant band splitting which originates from the exchange interaction unveiled with a specific chemical nonstoichiometry. The exchange band splitting and the chemical nonstoichiometry are two key ingredients to the HMST and CMR, consistent with our ab initio calculation. Our findings provide spectroscopic evidence of the electronic origin of the anomalous properties of HgCr 2 Se 4 , which address the unique phase transition in half-metals.