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At least 127 records · Page 7

Sub-melt nanosecond pulsed-laser induced densification and strain-field relaxation in single-crystal diamond

Dislocations and polishing-induced defect networks in synthetic diamond introduce local strain fields and broaden Raman features, limiting performance in optical, thermal, and electronic applications. Laser annealing is emerging as a promising approach to repair surface and near-surface defects in diamond without entering the melt regime, yet surface densification, defect-state modification, and associated structural changes have not been well quantified. In this work, we show that sub-melt nanosecond pulsed-laser annealing (PLA) induces near-surface densification and defect-mediated strain relaxation in single-crystal Chemical Vapor Deposition (CVD) diamond. Single- and two-pulse PLA were applied, and structural evolution was quantified using co-registered ISO 25,178 white-light interferometry, depth-resolved Raman spectroscopy, and cross-sectional STEM with geometric phase analysis (GPA). Across a 5 × 6 grid (n = 30), responsive regions exhibit large reductions in local slope (Sdq 45–65%), developed area (Sdr 60–90%), height spread (Sp, Sz 30–65%), void volume (Vv 57–60%), and roughness amplitude (Sa, Sq 48–57%), consistent with densification of ∼4–6.5 nm. Raman profiling shows narrowing of the diamond line and improved spectral uniformity to depths of ∼2–3 μm. Given that the Raman probing depth significantly exceeds the densified layer thickness, this response is interpreted as consistent with long-range strain-field redistribution originating from the near-surface region. STEM-GPA strain maps further support this interpretation, showing smoother strain fields, suppressed hotspots, and redistribution of localized strain concentrations following PLA. These results are consistent with defect-mediated strain relaxation and densification-driven modification of the near-surface energy state. The approach provides a scalable pathway for improving near-surface structural quality in diamond relevant to electronic, photonic, and quantum applications.

Areal surface metrology (ISO 25,178)↗

Autonomous Synthesis of Thin Film Materials with Pulsed Laser Deposition Enabled by In Situ Spectroscopy and Automation

Autonomous systems that combine synthesis, characterization, and artificial intelligence can greatly accelerate the discovery and optimization of materials, however platforms for growth of macroscale thin films by physical vapor deposition techniques have lagged far behind others. Here this study demonstrates autonomous synthesis by pulsed laser deposition (PLD), a highly versatile synthesis technique, in the growth of ultrathin WSe 2 films. Further, by combing the automation of PLD synthesis and in situ diagnostic feedback with a high-throughput methodology, this study demonstrates a workflow and platform which uses Gaussian process regression and Bayesian optimization to autonomously identify growth regimes for WSe 2 films based on Raman spectral criteria by efficiently sampling 0.25% of the chosen 4D parameter space. With throughputs at least 10x faster than traditional PLD workflows, this platform and workflow enables the accelerated discovery and autonomous optimization of the vast number of materials that can be synthesized by PLD.

36 MATERIALS SCIENCE↗

Carrier-envelope-phase characterization of ultrafast mid-infrared laser pulses through harmonic generation and interference in argon

The propagation of an intense, femtosecond, mid-infrared laser pulse in a gaseous medium results in the efficient generation of spectrally overlapping low-order harmonics, whose optical carrier phases are linked to the carrier-envelope phase (CEP) of the mid-infrared driver pulse. Random peak-power fluctuations of the driver pulses, converted to the fluctuations of the nonlinear phases, acquired by the pulses on propagation, cause this phase correlation to smear out. We show that this seemingly irreversible loss of phase can be recovered, and that the complete information needed for the phase correction is contained in the harmonic spectra itself. The optical phases of the intense driver pulse and its harmonics, as fragile as they appear to be against even weak disturbances, evolve deterministically during highly nonlinear propagation through the extended ionization region.

nonlinear optics↗

Synthesis and composition control of epitaxial FeWO4 thin films using pulsed laser deposition

We report the growth of epitaxial FeWO4 thin films on c-plane sapphire via pulsed laser deposition using a Fe 2 O 3 /WO 3 target ablated in an O 2 atmosphere. At a constant O 2 pressure of 1 mTorr, x-ray diffraction (XRD) confirms FeWO 4 as the major crystalline phase for substrate temperatures from 500 to 800 °C. As temperature increases, x-ray fluorescence (XRF) shows the Fe/W ratio remains nearly constant at 0.90 ± 0.02, while x-ray photoelectron spectroscopy (XPS) shows Fe 3+ to Fe 2+ conversion increases from 20% to 35%. Morphological analysis reveals phase separation, likely of amorphous Fe 3+ oxide from crystalline FeWO 4 , increasing with Fe 3+ conversion. This is attributed to an O-rich laser ablated flux, where conversion is driven by the Arrhenius temperature dependence of Fe 3+ → Fe 2+ reduction on the film surface. At a constant substrate temperature of 750 °C, XRD confirms FeWO 4 formation for O 2 pressures from 0.5 to 10 mTorr. As pressure increases, XRF shows the Fe/W ratio decreases from 0.98 to 0.70, while XPS shows Fe 3+ conversion rises from 15% to 70%. Morphology shows phase separation decreasing with increasing Fe 3+ conversion. This is attributed to scattering, where higher O 2 pressure makes the laser ablated flux O-deficient relative to Fe and W, facilitating Fe 2+ formation. Films with Fe 3+ conversion above ∼30% and Fe/W ratios from 0.86 to 0.96 exhibit FeWO 4 optical and electronic properties suitable for photoanode applications.

36 MATERIALS SCIENCE↗

Self-Guiding of Long-Wave Infrared Laser Pulses Mediated by Avalanche Ionization

Nonlinear self-guided propagation of intense long-wave infrared (LWIR) laser pulses is of significant recent interest, as it promises high power transmission without beam breakup and multifilamentation. Central to self-guiding is the mechanism for the arrest of self-focusing collapse. Here, we show that discrete avalanche sites centered on submicron aerosols can arrest self-focusing, providing a new mechanism for self-guided propagation of moderate intensity LWIR pulses in outdoor environments. In this work, our conclusions are supported by simulations of LWIR pulse propagation using an effective index approach that incorporates the time-resolved plasma dynamics of discrete avalanche breakdown sites.

47 OTHER INSTRUMENTATION↗

Real-Time Diagnostics of 2D Crystal Transformations by Pulsed Laser Deposition: Controlled Synthesis of Janus WSSe Monolayers and Alloys

Energetic processing methods such as hyperthermal implantation hold special promise to achieve the precision synthesis of metastable two-dimensional (2D) materials such as Janus monolayers; however, they require precise control. Here, we report a feedback approach to reveal and control the transformation pathways in materials synthesis by pulsed laser deposition (PLD) and apply it to investigate the transformation kinetics of monolayer WS 2 crystals into Janus WSSe and WSe 2 by implantation of Se clusters with different maximum kinetic energies (<42 eV/Se-atom) generated by laser ablation of a Se target. Real-time Raman spectroscopy and photoluminescence are used to assess the structure, composition, and optoelectronic quality of the monolayer crystal as it is implanted with well-controlled fluxes of selenium for different kinetic energies that are regulated with in situ ICCD imaging, ion probe, and spectroscopy diagnostics. First-principles calculations, XPS, and atomic-resolution HAADF STEM imaging are used to understand the intermediate alloy compositions and their vibrational modes to identify transformation pathways. The real-time kinetics measurements reveal highly selective top-layer conversion as WS 2 transforms through WS 2(1–x) Se 2x alloys to WSe 2 and provide the means to adjust processing conditions to achieve fractional and complete Janus WSSe monolayers as metastable transition states. The general approach demonstrates a real-time feedback method to achieve Janus layers or other metastable alloys of the desired composition, and a general means to adjust the structure and quality of materials grown by PLD, addressing priority research directions for precision synthesis with real-time adaptive control.

2D materials↗

Two-body dissociation of formic acid following double ionization by ultrafast laser pulses

We studied the fragmentation of planar formic acid (HCOOH) molecules following their double ionization by intense ultrashort laser pulses. Deuterium tagging (i.e., HCOOD) combined with coincidence momentum imaging measurements of all fragment ions enabled determination of the role of the hydroxyl and carboxyl hydrogen atoms in the breakup. Specifically, we observe a strong preference for the hydroxyl (OD) group to remain intact in a ${\mathrm{HCOOD}}^{2+}{\rightarrow}{\mathrm{OD}}^{+}+{\mathrm{HCO}}^{+}$ fragmentation, which is an order of magnitude more likely than ${\mathrm{OH}}^{+}+{\mathrm{DCO}}^{+}$. An even larger preference for breaking the H-C bond over the O-H bond is observed in the ${\mathrm{H}}^{+}+{\mathrm{DCO}}_{2}^{+}$ and ${\mathrm{D}}^{+}+{\mathrm{HCO}}_{2}^{+}$ deprotonation channels. Bond rearrangement, leading to ${\mathrm{H}}_{2}^{+}$ or ${\mathrm{H}}_{2}{\mathrm{O}}^{+}$ formation, exhibits no isotopic preference. The kinetic-energy-release distributions of the ${\mathrm{OH}}^{+}+{\mathrm{DCO}}^{+}$ and ${\mathrm{O}}^{+}+{\mathrm{H}}_{2}{\mathrm{CO}}^{+}$ breakup channels suggest that more than one process contributes to these final products, although further theoretical work is needed to identify the specific paths.

74 ATOMIC AND MOLECULAR PHYSICS↗

High resolution time- and angle-resolved photoemission spectroscopy with 11 eV laser pulses

Performing time- and angle-resolved photoemission (tr-ARPES) spectroscopy at high momenta necessitates extreme ultraviolet laser pulses, which are typically produced via high harmonic generation (HHG). Despite current advances, HHG-based setups still require large pulse energies (from hundreds of μ J to mJ) and their energy resolution is limited to tens of meV. Here, we present a novel 11 eV tr-ARPES setup that generates a flux of 5 × 10 10 photons/s and achieves an unprecedented energy resolution of 16 meV. It can be operated at high repetition rates (up to 250 kHz) while using input pulse energies down to 3 µ J. We demonstrate these unique capabilities by simultaneously capturing the energy and momentum resolved dynamics in two well-separated momentum space regions of a charge density wave material ErTe 3 . This novel setup provides the opportunity to study the non-equilibrium band structure of solids with exceptional energy and time resolutions at high repetition rates.

47 OTHER INSTRUMENTATION↗

Ultrasmooth Epitaxial Pt Thin Films Grown by Pulsed Laser Deposition

Platinum (Pt) thin films are useful in applications requiring high-conductivity electrodes with excellent thermal and chemical stability. Ultrasmooth and epitaxial Pt thin films with single-crystalline domains have the added benefit of providing ideal templates for the subsequent growth of heteroepitaxial structures. Here, we grow epitaxial Pt (111) electrodes (ca. 30 nm thick) on sapphire (α-Al 2 O 3 (0001)) substrates with pulsed laser deposition. This versatile technique allows control of the growth process and fabrication of films with carefully tailored parameters. X-ray scattering, atomic-force microscopy, and electron microscopy provide structural characterization of the films. Various gaseous atmospheres and temperatures were explored to achieve epitaxial growth of films with low roughness. A two-step (500 °C/300 °C) growth process was developed, yielding films with improved epitaxy without compromising roughness. The resulting films possess ultrasmooth interfaces (<3 Å) and high electrical conductivity (6.9 × 10 6 S/m). Finally, Pt films were used as current collectors and templates to grow lithium manganese oxide (LiMn 2 O 4 (111)) epitaxial thin films, a cathode material used in Li-ion batteries. In conclusion, using a solid-state ionogel electrolyte, the films were highly stable when electrochemically cycled in the 3.5-4.3 V vs Li/Li + range.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pristine Interface between Lithium Lanthanum Zirconate and Lithium Manganese Oxide by Pulsed Laser Deposition

Solid state lithium-ion batteries have garnered increasing interest in recent years due to several potential advantages over liquid-electrolyte based systems. The possibility of integrating the lithium garnet oxide, Li 6.75 La 3 Zr 1.75 Ta 0.25 O 12 (LLZTO), with the high voltage cathode, spinel Li x Mn 2 O 4 (LMO), is evaluated here. Thin film bilayer structures are prepared by pulsed laser deposition on MgO (001) substrates and characterized by x-ray diffraction and transmission electron microscopy. The LLZTO is grown by an alternating layer-by-layer deposition of LLZTO and Li 3 N and subsequently annealed for several hours at 575 °C to promote crystallinity. Growth of crystalline LMO with a pristine interface to LLZTO is achieved by gentle heat treatment (500 °C) to remove surface carbonate from the electrolyte and by cathode growth at a low temperature of 250 °C. Higher temperature depositions (330 – 450 °C) result in reaction between the two materials and the appearance of Li 2 MnO 3 , which may be in part due to the presence of excess lithium in the electrolyte layer. Because fully lithiated LiMn 2 O 4 has a voltage of ≈3.7 V versus Li+/Li, the observation of a well-defined interface, free of impurity phases and with no interdiffusion of elements, indicates LLZTO is stable to at least 3.7 V.

Garnet LLZO↗

A comparative study of cerium oxides formed by pulsed laser ablation and continuous wave laser heating

Abstract The formation of Ce 2 O 3 from cerium metal requires complex reducing conditions. Alternatively, we show that different stoichiometries and structures of cerium oxides can be generated in high‐temperature laser experiments by varying the availability of oxygen and the use of either pulsed laser ablation (PLA) or continuous wave (CW) laser heating of cerium metal. X‐ray diffraction and Raman spectroscopy suggest that a low structural order Ce 2 O 3 /CeO 2 mixed structure is formed in a 1% O 2 atmosphere with PLA. For CW heating in a 1% O 2 environment, Raman measurements show the formation of crystalline A‐type Ce 2 O 3 in proximity to the point of laser impingement. These experiments were repeated in 18 O 2 and allowed us to report for the first time the corresponding Raman spectrum of Ce 2 18 O 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Analysis of THz generation by multicolor laser pulses with various frequency ratios

Here, terahertz (THz) generation in a gas medium is simulated by quantum calculations with multicolor intense laser pulses of various frequency ratios. By correlating THz radiation with the above-threshold-ionization photoelectron spectrum, we confirm that our previously proposed free-free transition model for the generation of THz radiation is also applicable to multicolor pulses. THz photon emissions can proceed through transitions between continuous states with similar energies that have opposite parities. This mechanism predicts that THz waves can be efficiently generated at special two-color laser frequency ratios when the multiphoton mixing condition is satisfied. Applying this model to multicolor fields (sawtooth wave shape), we provide a quantum-mechanical interpretation for the reason for THz radiation enhancement. A scheme combining multiple lasers to raise THz radiation satisfying multiphoton mixing conditions is also proposed.

74 ATOMIC AND MOLECULAR PHYSICS↗

Epitaxial growth and characterization of magnesium gallate (MgGa 2 O 4 ) thin films by pulsed laser deposition

To advance high power device application of MgGa 2 O 4 , it is imperative to achieve crystalline epitaxial thin films and to observe its materials’ characteristics within a wide range of growth conditions. However, there is no published work on the growth of this promising ultrawide bandgap material till this day. In this study, we report the crystalline growth of MgGa 2 O 4 thin films on c-plane (006) sapphire substrates using the pulsed laser deposition (PLD) technique in a broad range of temperature and oxygen pressure. The temperature range for this crystalline growth was within the temperature range of 300°C to 700°C and a pressure range of 1x10 -1 to 1x10 -3 Torr. Within this parameter range, the structural, chemical, optical, and surface property of MgGa 2 O 4 thin films have been investigated. Specifically, the acquired XRD patterns confirmed the film growth along the [111] preferential crystal orientation in the lattice. Here, the rocking curve measurement of the prominent (222) plane showed an increasing trend of the crystallinity with growth temperature and pressure. Furthermore, the XRD phi (φ) scan demonstrated the six-fold rotational symmetry of the MgGa 2 O 4 films and the epitaxial relationship of 30° between the film and the sapphire substrate. The XPS spectra confirmed the presence of +2 and +3 oxidation state for Mg and Ga respectively, in the films. The direct bandgap of MgGa 2 O 4 films was obtained ~5.27±0.03 eV by analyzing the UV-Vis absorbance spectra using the Tauc equation. The SEM images exhibited a granular surface morphology of the MgGa 2 O 4 films with an increasing trend in the grain size from low to high temperature and pressure. The refractive index and thickness of these films were in the range of ~1.90±0.02 and ~70±2.0 nm, respectively determined by fitting the spectroscopic ellipsometry data.

36 MATERIALS SCIENCE↗

Optical properties of differing nanolayered structures of divalent europium doped barium fluoride thin films synthesized by pulsed laser deposition

Optically-active thin films are employed in a variety of applications, such as LEDs and photovoltaics, due to their ability to act as up- or down-photon energy converters. Their performance depends critically on their composition and structure; thus, the use of novel synthesis techniques that allow for their control at the nanoscale level can result in improved efficiency and practicality. Here, layered thin films consisting of Eu 2+ - doped BaF 2 nanocrystalline layers separated by amorphous Al 2 O 3 were synthesized via sequential pulsed laser deposition using three separate targets for the different components; this synthesis technique provides precise control of layer thickness at the nanoscale along with dopant distribution within the film. Cross-sectional transmission electron microscopy analysis verified the desired nano-layering. Post-deposition heat treatments in a nitrogen atmosphere resulted in samples exhibiting steady emission with a broad peak ranging from 400 to 600 nm and a shoulder at 410 nm. The CIE 1931 chromaticity coordinates are x = 0.26-0.29 and y = 0.32-0.35 and vary as a function of the sample configuration. Because the chromaticity coordinates are close to those of a pure white light (x = 0.33, y = 0.33), these films demonstrate advantageous properties for applications with UV-pumped white light LEDs.

36 MATERIALS SCIENCE↗

Pulsed laser synthesis of mesoporous metal chalcogenide thin films

Mesoporous films of the metal chalcogenide B-FeSe were grown on MgO substrates by KrF pulsed laser deposition (PLD) in an argon background. At 100 mTorr, gated intensified charge-coupled device imaging and ion probe measurements showed that the plasma plume responsible for crystal growth initially comprised three components, with distinct expansion velocities. Plume interactions with the substrate heater and ablation target gave rise to complex dynamics, including collisions between the charged leading edge—rebounding between the substrate and the target—and slower-moving species in the plume interior. Film growth was dominated by species with kinetic energies ≤0.5 eV/atom. X-ray reflectivity revealed that films grown in this environment—with a substrate temperature of 350 ° C, a laser fluence of 1.0 J cm −2 , and a 7.5 mm 2 spot area—formed a porous framework with 15% porosity. Atomic force microscopy showed surface features that suggest pore sizes below 100 nm. X-ray diffraction indicated that the porous films were epitaxial with respect to the substrate and likely grew by oriented-attachment of gas-phase molecular clusters or very small nanoparticles, in contrast to the conventional epitaxy of vacuum films from atomic constituents. The in-plane orientation of the mesoporous films was B-FeSe [100]||[110] MgO, attributed to the soft landing of pre-formed crystallites on the MgO substrates, where protruding Se rows of B-FeSe aligned with corrugations of the MgO surface. In conclusion, this work implies that growth of candidate electrocatalyst materials by PLD in inert gas background may allow mesoporous frameworks with a single crystallographic orientation that expose specific crystal facets for electrochemical reactions and active site engineering.

cluster epitaxy↗

Focusability in the multi-pump Raman amplification of short laser pulses

Spatially combining multiple strong laser beams is a promising concept for achieving ultrahigh laser intensities. Proof-of-principle experiments have been conducted at the National Ignition Facility to report a combination of up to 20 pulses with high energy conversion efficiency. However, the combination process might damage the seed focusability due to mismatch of the seed and pump wavefronts. Here, we investigate the effect of the finite pump beam size on the focusability of the seed pulse. We propose an approach to retain and even improve the seed focusability by specifically arranging multiple pump beams. The results are demonstrated by the numerical solution of coupled nonlinear Schrödinger equations. Our findings also apply to seed amplification by filamented pump pulses.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Toward direct spatial and intensity characterization of ultra-high-intensity laser pulses using ponderomotive scattering of free electrons

Spatial distributions of electrons ionized and scattered from ultra-low-pressure gases are proposed and experimentally demonstrated as a method to directly measure the intensity of an ultra-high-intensity laser pulse. Analytic models relating the peak scattered electron energy to the peak laser intensity are derived and compared to paraxial Runge–Kutta simulations highlighting two models suitable for describing electrons scattered from weakly paraxial beams (f#>5) for intensities in the range of 1018−1021 W cm−2. Scattering energies are shown to be dependent on gas species, emphasizing the need for specific gases for given intensity ranges. Direct measurements of the laser intensity at full power of two laser systems are demonstrated, both showing a good agreement between indirect methods of intensity measurement and the proposed method. One experiment exhibited the role of spatial aberrations in the scattered electron distribution, motivating a qualitative study on the effect. We propose the use of convolutional neural networks as a method for extracting quantitative information on the spatial structure of the laser at full power. We believe the presented technique to be a powerful tool that can be immediately implemented in many high-power laser facilities worldwide.

47 OTHER INSTRUMENTATION↗