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At least 127 records · Page 7

Colloidal Synthesis Path to 2D Crystalline Quantum Dot Superlattices

By combining colloidal nanocrystal synthesis, self-assembly, and solution phase epitaxial growth techniques, we developed a general method for preparing single dot thick atomically attached quantum dot (QD) superlattices with high-quality translational and crystallographic orientational order along with state-of-the-art uniformity in the attachment thickness. The procedure begins with colloidal synthesis of hexagonal prism shaped core/shell QDs (e.g., CdSe/CdS), followed by liquid subphase self-assembly and immobilization of superlattices on a substrate. Solution phase epitaxial growth of additional semiconductor material fills in the voids between the particles, resulting in a QD-in-matrix structure. The photoluminescence emission spectra of the QD-in-matrix structure retains characteristic 0D electronic confinement. Importantly, annealing of the resulting structures removes inhomogeneities in the QD–QD inorganic bridges, which our atomistic electronic structure calculations demonstrate would otherwise lead to Anderson-type localization. The piecewise nature of this procedure allows one to independently tune the size and material of the QD core, shell, QD–QD distance, and the matrix material. These four choices can be tuned to control many properties (degree of quantum confinement, quantum coupling, band alignments, etc.) depending on the specific applications. Lastly, cation exchange reactions can be performed on the final QD-in-matrix, as demonstrated herein with a CdSe/CdS to HgSe/HgS conversion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Valley filtering in strain-induced α-$\mathcal{T}_3$ quantum dots

We test the valley filtering capabilities of a quantum dot inscribed by locally straining an α-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and calculate the generated pseudo-magnetic field having opposite direction for electrons originating from different valleys, the resulting valley-polarized currents, and the conductance between the injector and collector situated opposite one another. Depending on the quantum dot’s width and width-to-height ratio, we detect different transport regimes with and without valley filtering for both the α-$\mathcal{T}_3$ and Dice lattice structures. In addition, we analyze the essence of the conductance resonances with high valley polarization in terms of related (pseudo) Landau levels, the spatial distribution of the local density of states and the local current densities. The observed local charge and current density patterns reflect the local inversion symmetry-breaking by the strain, besides the global inversion symmetry breaking due to the scaling parameter α. By this way we can also filter out different sublattices

36 MATERIALS SCIENCE↗

Quantum Dots Microstructured Optical Fiber for X-Ray Detection

Microstructured optical fibers containing quantum dots scintillation material comprised of zinc sulfide nanocrystals doped with magnesium sulfide are presented. These quantum dots are applied inside the microstructured optical fibers using capillary action. The x-ray photon counts of these fibers are compared to the output of a collimated CdTe solid state detector over an energy range from 10 to 40 keV. The results of the fiber light output and associated effects of an acrylate coating and the quantum dot application technique are discussed.

DeHaven, Stan↗

Anthracene Diphosphate Ligands for CdSe Quantum Dots; Molecular Design for Efficient Upconversion

Quantum dot (QD)-sensitized photon upconversion follows a multi-step energy transfer process from the QD to transmitter ligand to a soluble annihilator. Using a novel 10-R-anthracene-1,8-diphosphoric acid (R = octyl, 2- hexyldecyl, phenyl) ligand with high binding affinity for CdSe QD surfaces, we demonstrate a photon upconversion process that is limited by the transmitter to annihilator transfer efficiency. Using 1 H NMR spectroscopy, we demonstrate that these bidentate diphosphate ligands rapidly and irreversibly displace two carboxylate ligands. These ligands mediate energy transfer from the photoexcited QDs to a triplet annihilator (1,10-diphenylanthracene), producing overall photon upconversion quantum efficiencies as high as 17%, the highest for QDs with no shells. In conclusion, transient absorption spectroscopy shows that the anthracene dihydrogen phosphate (ADP) ligand supports a 3.4 fold longer triplet state lifetime compared to 9-anthracene carboxylic acid (299.9 ± 9.5 vs 88.2 ± 2.1 μs), increasing the probability of energy transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Pressure-Modulated Energy Transfer Dynamics in Mn 2+ -Doped CdS/ZnS Core/Shell Quantum Dots

Transition metal doping in semiconductor quantum dots (QDs) significantly impacts their optical properties, thus expanding the range of their potential optoelectronic applications. This study investigates the pressure-dependent energy transfer dynamics in Mn 2+ -doped CdS/ZnS core/shell QDs, focusing on how external hydrostatic pressure modulates these dynamics and optical properties. By synthesizing Mn 2+ -doped QDs with varying Mn 2+ doping concentrations, we explore the effects of the pressure on photoluminescence (PL) spectra and energy transfer efficiency. Our study reveals that increasing pressure induces a blueshift in the QD host bandgap PL and a redshift in the Mn 2+ dopant PL. The pressure-induced shifts highlight a unique modulation mechanism where the energy transfer efficiency decreases with pressure due to reduced wave function overlap between host excitons and Mn 2+ dopants. Detailed analysis of the PL quantum yields and energy transfer rate constants provides insights into these dynamics, suggesting that the pressure can effectively and reversibly regulate the energy transfer efficiencies and rates. In conclusion, these results have implications for developing pressure-sensitive configurable devices and exploring pressure-induced phenomena in doped nanomaterials.

36 MATERIALS SCIENCE↗

Ultrafast Symmetry Control in Photoexcited Quantum Dots

Symmetry control is essential for realizing unconventional properties, such as ferroelectricity, nonlinear optical responses, and complex topological order, thus it holds promise for the design of emerging quantum and photonic systems. Nevertheless, fast and reversible control of symmetry in materials remains a challenge, especially for nanoscale systems. Here, reversible symmetry changes are unveiled in colloidal lead chalcogenide quantum dots on picosecond timescales. Using a combination of ultrafast electron diffraction and total X-ray scattering, in conjunction with atomic-scale structural modeling and first-principles calculations, it is revealed that symmetry-broken lead sulfide quantum dots restore to a centrosymmetric phase upon photoexcitation. The symmetry restoration is driven by photoexcited electronic carriers, which suppress lead off-centering for about 100 ps. Furthermore, the change in symmetry is closely correlated with the electronic properties, and the bandgap transiently red-shifts in the symmetry-restored quantum dots. Overall, this study elucidates reversible symmetry changes in colloidal quantum dots, and more broadly defines a new methodology to optically control symmetry in nanoscale systems on ultrafast timescales.

36 MATERIALS SCIENCE↗

Conductance of a dissipative quantum dot: Nonequilibrium crossover near a non-Fermi-liquid quantum critical point

In this work, we find the nonlinear conductance of a dissipative resonant level in the nonequilibrium steady state near its quantum critical point. The system consists of a spin-polarized quantum dot connected to two resistive leads that provide ohmic dissipation. We focus on the crossover from the strong-coupling, non-Fermi-liquid regime to the weak-coupling, Fermi-liquid ground state, a crossover driven by the instability of the quantum critical point to hybridization asymmetry or detuning of the level in the dot. We show that the crossover properties are given by tunneling through an effective single barrier described by the boundary sine-Gordon model. The nonlinear conductance is then obtained from thermodynamic Bethe ansatz results in the literature, which were developed to treat tunneling in a Luttinger liquid. The current-voltage characteristics are thus found for any value of the resistance of the leads. For the special case of lead resistance equal to the quantum resistance, we find mappings onto, first, the two-channel Kondo model and, second, an effectively noninteracting model from which the nonlinear conductance is found analytically. A key feature of the general crossover function is that the nonequilibrium crossover driven by applied bias is different from the crossover driven by temperature---we find that the nonequilibrium crossover is substantially sharper. Finally, we compare to experimental results for both the bias and temperature crossovers: the agreement is excellent.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Entropy Measurement of a Strongly Coupled Quantum Dot

The spin 1/2 entropy of electrons trapped in a quantum dot has previously been measured with great accuracy, but the protocol used for that measurement is valid only within a restrictive set of conditions. Here, in this work, we demonstrate a novel entropy measurement protocol that is universal for arbitrary mesoscopic circuits and apply this new approach to measure the entropy of a quantum dot hybridized with a reservoir. The experimental results match closely to numerical renormalization group (NRG) calculations for small and intermediate coupling. For the largest couplings investigated in this Letter, NRG calculations predict a suppression of spin entropy at the charge transition due to the formation of a Kondo singlet, but that suppression is not observed in the experiment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dots

NEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.

transport tunneling quantum↗

Quantum Dot–Organic Molecule Conjugates as Hosts for Photogenerated Spin Qubit Pairs

The inherent spin polarization present in photogenerated spin-correlated radical pairs makes them promising candidates for quantum computing and quantum sensing applications. The spin states of these systems can be probed and manipulated with microwave pulses using electron paramagnetic resonance spectrometers. However, to date, there are no reports on magnetic resonance-based spin measurements of photogenerated spin-correlated radical pairs hosted on quantum dots. In the current work, we prepare dye molecule-inorganic quantum dot conjugates and show that they can produce photogenerated spin-polarized states. The dye molecule, D131, is chosen for its ability to undergo efficient charge separation, and the nanoparticle materials, ZnO quantum dots, are chosen for their promising spin properties. Transient and steady state optical spectroscopy performed on ZnO quantum dot-D131 conjugates shows that reversible photogenerated charge separation is occurring. Transient and pulsed electron paramagnetic resonance experiments are then performed on the photogenerated radical pair, which demonstrate that (1) the radical pair is polarized at moderate temperatures and well modeled by existing theories and (2) the spin states can be accessed and manipulated with microwave pulses. In conclusion, this work opens the door to a new class of promising qubit materials that can be photogenerated in polarized states and hosted by highly tailorable inorganic nanoparticles.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Two‐Color Amplified Spontaneous Emission from Auger‐Suppressed Quantum Dots in Liquids

Abstract Colloidal quantum‐dot (QD) lasing is normally achieved in close‐packed solid‐state films, as a high QD volume fraction is required for stimulated emission to outcompete fast Auger decay of optical‐gain‐active multiexciton states. Here a new type of liquid optical‐gain medium is demonstrated, in which compact compositionally‐graded QDs (ccg‐QDs) that feature strong suppression of Auger decay are liquefied using a small amount of solvent. Transient absorption measurements of ccg‐QD liquid suspensions reveal broad‐band optical gain spanning a wide spectral range from 560 (green) to 675 nm (red). The gain magnitude is sufficient to realize a two‐color amplified spontaneous emission (ASE) at 637 and 594 nm due to the band‐edge (1S) and the excited‐state (1P) transition, respectively. Importantly, the ASE regime is achieved using quasicontinuous excitation with nanosecond pulses. Furthermore, the ASE is highly stable under prolonged excitation, which stands in contrast to traditional dyes that exhibit strong degradation under identical excitation conditions. These observations point toward a considerable potential of high‐density ccg‐QD suspensions as liquid, dye‐like optical gain media that feature readily achievable spectral tunability and stable operation under intense photoexcitation.

Li, Xueyang↗

Optimization of the electron transport layer in quantum dot light-emitting devices

Quantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

36 MATERIALS SCIENCE↗

Resonance plasmonic coupling: selective enhancement of band edge emission over trap state emission of CdSe quantum dots

The photoluminescence properties of quantum dots (QDs) are often enhanced by eliminating surface trap states through chemical methods. Alternatively, a physical approach is presented here for improving photoluminescence purity in QDs by employing frequency-specific plasmon resonance coupling. Emitter-bound plasmonic hybrids are designed by electrostatically binding negatively charged QDs in water to positively charged gold nanoparticles having a thin polymer coating. Herein, two types of QDs are used: (i) bare CdSe, which exhibits both band edge and trap state emission, and (ii) CdSe overcoated with a ZnS shell (CdSe/ZnS) devoid of trap state emission. Tuning the extinction spectrum of the plasmonic system to match the band edge emission of CdSe enables the selective enhancement of band edge emission over trap state emission. Excellent match in the extinction spectrum of the gold nanoparticle with both, experimentally calculated photoluminescence enhancement factor and theoretically calculated radiative rate enhancement signifies the role of frequency-specific plasmon resonance coupling. Plasmon-coupled photoluminescence of CdSe/ZnS is further investigated by varying the number density of emitter on the surface of plasmonic nanoparticle. An enhancement in the photoluminescence is observed at a lower emitter density of CdSe/ZnS and the photoluminescence enhancement factor closely follows the plasmon resonance. However, photoluminescence quenching occurs with an increase in CdSe/ZnS due to plasmon-assisted nonradiative energy transfer between nearby QDs, as indicated by a red shift in the PL maximum. These studies establish that resonance plasmonic coupling is a convenient physical strategy for tuning the intrinsic photoluminescence properties of QDs for various optoelectronic applications.

Paul, Livin↗

Fabricating Single Crystal Quantum Dot Solids

The central goal of this research program was to establish fundamental synthesis and processing principles to enable the fabrication of single crystal quantum dot solids (QDS) with programmable structure (i.e., hexagonal and square) and composition. Our approach towards that goal leveraged access to and experience with unique in-situ, multi-probe characterization techniques to understand and ultimately control the fundamental relationship between processing conditions and nucleation and growth of QDS. The program integrated synthesis and fabrication (Hanrath) with in-situ TEM analysis (Kourkoutis) and computational modeling (Clancy) to gain atomic-level insights into the underlying physical phenomena governing assembly and attachment and to guide the development of optimized processing methods. We have established a foundational understanding of physicochemical interactions of self-assembly at a fluid interface, superlattice structure transformation pathways, the critical role of disorder during the initial dimerization of colloidal quantum dot monomers, and the residual strain distribution within the inter-dot epitaxial bridge which hampers the formation of novel electronics states of the quantum dot solids. Collectively, these insights have contributed towards advancing the mechanistic understanding of the complex choreography of assembly and attachment as well as understanding what currently limits further advances in high-fidelity quantum dot solids and tiles.

36 MATERIALS SCIENCE↗

Quantum dot microscope apparatus comprising a nanoscale semiconductor on the tip of a fiber, a tunneling electrical lead and a capacitive electrical lead on the fiber

A quantum dot microscope apparatus is provided. A further aspect employs a tilted or tapered end or tip on a microscopic probe. Another aspect of the present apparatus employs a probe including a quantum dot with only one tunneling lead connected to a power source. A manufacturing aspect includes creating a tapered or asymmetrically shaped specimen-facing end of a probe where a quantum dot is located on the end. A further manufacturing aspect includes using focused ion-beam milling to create a tip or end of a quantum dot microscope probe.

Tessmer, Stuart Holden↗

Toward Robust Autotuning of Noisy Quantum dot Devices

The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a “gatekeeper” system, ensuring that only reliable data are processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9)% when tested on experimental data. We then validate the functionality of the data quality control module by showing that the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Unraveling Exciton Trap Dynamics and Nonradiative Loss Pathways in Quantum Dots via Atomistic Simulations

Surface defects in colloidal quantum dots are a major source of nonradiative losses, yet the microscopic mechanisms underlying exciton trapping and recombination remain elusive. Here, we develop a model Hamiltonian based on atomistic electronic calculations to investigate exciton dynamics in CdSe/CdS core/shell QDs containing a single hole trap introduced by an unpassivated sulfur atom. By systematically varying the defect depth and reorganization energy, we uncover how defect-induced excitonic states mediate energy relaxation pathways. Our simulations reveal that a single localized defect can induce a rich spectrum of excitonic states, leading to multiple dynamical regimes, from slow, energetically off-resonant trapping to fast, cascaded relaxation through in-gap defect states. Crucially, we quantify how defect-induced polaron shifts and exciton-phonon couplings govern the balance between efficient radiative emission and rapid nonradiative decay. These insights clarify the microscopic origin of defect-assisted loss channels and suggest pathways for tailoring QD optoelectronic properties via surface and defect engineering.

Defects↗