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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Effects of carbon content, heat treatment and swaging on stress-rupture properties of heat resistant alloy
Effect of hydrogen on stress-rupture and fatigue of an iron-, nickel-, and cobalt-base alloy
Semiautomatic modulus of rupture tester for use in vacuum or inert atmosphere with ability to test 18 specimens without being reloaded
Semiautomatic rupture modulus tester for vacuum or inert atmosphere
Effects of two nickel alloy braze coatings, heat treatments, and processing variables on rupture strength of sheet metals
Shock rupture apparatus to test filaments under controlled conditions of atmosphere, stress and temperature
Rupture or fracture initiation of elastomers and propellants
Vacuum effect on fatigue and stress rupture properties of nickel and cobalt superalloys
Optimization of time-temperature parameters for creep and stress rupture, with application to data from German cooperative long-time creep program
Stress rupture properties of tungsten wire from 1200 to 2500 deg F
Stress rupture properties of tungsten wire at high temperatures, noting effect of primary recrystallization on microhardness, ductility and grain size
Stress rupture and creep properties analyzed in tungsten fiber reinforced copper composites
Dependence of stress rupture and superplasticity on structure in Co-W alloys
Power MOSFET devices are susceptible to heavy-ion induced Single-Event Gate Rupture. Computer modeling show that intense electric field transients can trigger the SEGR phenomenon.
The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.
The propensity for a cell design to experience can side wall rupture (SWR) during thermal runaway is highly influenced by how a battery design mechanically constrains its cells. Testing cells while unsupported has been found to yield false negative results that don't represent this risk in a battery configuration. This talk addresses how to verify the adequacy of battery design measures used to control SWR and how to get results relevant, accurate, and statistically defendable for a proposed battery design.
The braid at each end of a standard electric cable puller is modified to reinforce high pressure, flexible, fluid transfer hoses. This safety device acts as a restraint if the line ruptures.