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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Preliminary Analysis: Am-241 RHU/TEG Electric Power Source for Nanosatellites

The Februay 2013 Space Works Commercial report indicates a strong increase in nano/microsatellite (1-50 kg) launch demand globally in future years. Nanosatellites (NanoSats) are small spacecraft in the 1-10 kg range, which present a simple, low-cost option for developing quickly-deployable satellites. CubeSats, a special category of NanoSats, are even being considered for interplanetary missions. However, the small dimensions of CubeSats and the limited mass of the NanoSat class in general place limits of capability on their electrical power systems (especially where typical power sources such as solar panels are considered) and stored energy reserves; restricting the power budget and overall functionality. For example, leveraging NanoSat clusters for computationally intensive problems that are solved collectively becomes more challenging with power related restrictions on communication and data-processing. Further, interplanetary missions that would take NanoSats far from the sun, make the use of solar panels less effective as a power source as their required area would become quite large. To overcome these limitations, americium 241 (Am-241) has been suggested as a low power source option. The Idaho National Laboratory, Center for Space Nuclear Research reports that:  (Production) requires small quantities of isotope - 62.5 g of Pu-238; 250 g Am- 241 (for 5 We); Am-241 is available at around 1 kg/yr commercially; Am-241 produces 59 kev gammas which are stopped readily by tungsten so the radiation field is very low. Whereby, an Am-241 source could be placed in among the instruments and the waste heat used to heat the platform; and  amounts of isotope are so low that launch approval may be easier, especially with tungsten encapsulation. As further reported, Am-241 has a half-life that is approximately five times greater than that of Pu- 238 and it has been determined that the neutron yield of a 241-AmO(sub 2) source is approximately an order of magnitude lower than that of a 238-PuO(sub 2) source of equal mass and degree of (sup 16)O enrichment. Also it has been demonstrated that shielded heat sources fuelled by oxygen-enriched 238-PuO(sub 2) have masses that are up to 10 times greater than those fuelled by oxygenenriched 241-AmO(sub 2) with equivalent thermal power outputs and neutron dose rates at 1 m radii. For these reasons, Am-241 is well suited to missions that demand long duration electrical power output, such as deep spaceflight missions and similar missions that use radiation-hard electronics and instrumentation that are less susceptible to neutron radiation damage.

Robertson, Glen A.↗
NASA NTRS1995

Enhanced Low Dose Rate Effects in Bipolar Circuits: A New Hardness Assurance Problem for NASA

Many bipolar integrated circuits are much more susceptible to ionizing radiation at low dose rates than they are at high dose rates typically used for radiation parts testing. Since the low dose rate is equivalent to that seen in space, the standard lab test no longer can be considered conservative and has caused the Air Force to issue an alert. Although a reliable radiation hardness assurance test has not yet been designed, possible mechanisms for low dose rate enhancement and hardness assurance tests are discussed.

bipolar integrated circuits↗
NASA NTRS1985

Chemistry of MOS-LSI radiation hardening

The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

Grunthaner, P.↗
NASA NTRS2006

X-Ray Detector Research at MSFC for Space Applications

NASA's Vision for Space Exploration has specific goals aimed at exploring the Solar System. This vision, under presidential mandate includes landing humans on the moon before the end of the next decade, paving the way for eventual journeys to Mars and beyond. The first missions to the moon will be in the form of both Orbiters and Landers, with the goal of paving the way for human return. One of the instruments we are currently working on,in collaboration with Brookhaven National Laboratory, is a lunar orbiter fluorescent x-ray spectrometer to finely map the light elements (down to Carbon) on surface of the moon. Funded NASA s Planetary Instrument Definition and Development Program the instrument is based on silicon drift detector arrays read out by custom ASICs. These offer the promise of high spectral resolution, necessary for resolving weak lines against a strong background continuum, and very low power requirements, necessary for large areas (greater than 500 square centimeters) required for future lunar missions. Further, the inherent radiation hardness of these detectors makes them ideal candidates for exploring the Jovian system, where the harsh radiation environment from Jupiter s radiation belts creates unfavorable detector conditions. Looking beyond our solar system, in the hard x-ray regime (20-80keV.), we are studying Cadmium-Zinc-Telluride pixilated detectors as feasible candidates for focal plane detectors of a hard x-ray telescope. This energy region bridges the gap between thermal and non-thermal x-ray emission from astronomical sources, will allow us to better understand supernovae nucleosynthesis (such as through the Ti-44 lines at 68keV and 78keV), Active Galactic Nuclei and other compact objects, more completely. The detectors that we are characterizing are 2mm in thickness and are pixilated with a 16x16 array of 300 micrometer pitch pixels (50micometer gap). These detectors are designed at Rutherford Appleton Laboratory, material is from eV Products, and polymer flip-chip assembly was performed by a commercial vendor. An energy resolution of 2.0% at 60keV (or better) should allow us to sufficiently distinguish lines of interest from background continuum, and the detector spatial resolution should be fine enough to over-sample the focal spot from the x-ray focusing optics by about a factor of two. Full technical details of these developments will be presented.

Gaskin, Jessica↗
NASA NTRS1982

Thermal annealing of radiation damage in CMOS ICs in the temperature range -140 C to +375 C

Annealing of radiation damage was investigated in the commercial, Z- and J-processes of the RCA CD4007A ICs in the temperature range from -140 C to +375 C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140 C. It was found that at -140 C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z- and J-process is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20 C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.

Danchenko, V.↗
NASA NTRS1991

Space environmental effects on coated optics

Several multilayer coated mirror designs developed for potential space applications were tested on the Long Duration Exposure Facility (LDEF) along with single layer witness coatings deposited on fused silica and a coated CaF2 window. Performance requirements included high mirror reflectivity, low absorption, low scatter, environmental durability, and radiation hardness. The designs were selected in screening tests using combined electron, proton, and simulated solar UV radiation. The purpose of the space test was to validate the above test results and determine the effects of atomic oxygen and contamination on mirror performance.

Donovan, T. M.↗
NASA NTRS2021

NASA Engineering and Safety Center Technical Bulletin No. 19-01-1: Mitigating Risks of Single-Event Effects in Space Applications

Since most Electrical, Electronic, and Electromechanical (EEE) parts are intended for terrestrial applications, they are susceptible to a range of radiation threats in the space environment if the resulting effects are not properly characterized and mitigated. Even specially designed radiation-hardened parts may not be tolerant to all types of radiation effects. Radiation hardness is a multi-dimensional property of any part that describes intrinsic abilities to tolerate various radiation environments [1,2]. Effects to be concerned with include total ionizing dose, total non-ionizing dose, and single-event effects (SEE) – all of which depend on the mission, environment, application, and lifetime. Radiation effects concerns may be the same whether a EEE part is Commercial-Off-The-Shelf (COTS), MIL-SPEC, or some other variant, all of which are susceptible to the same radiation threats [3]. SEE consequences range from recoverable faults to catastrophic failure. Like other random faults, SEE can be mitigated with informed circuit design practices at the device, card, and/or system level.

Single-event effects↗
NASA NTRS2015

High Radiation Resistance IMM Solar Cell

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Pan, Noren↗
NASA NTRS2017

Radiation Effects: Overview for Space Environment Specialists

Radiation Hardness Assurance (RHA) methodologies need to evolve to capitalize on the increased flexibility introduced by new models of space radiation environments. This presentation examines the characteristics of various radiation threats, the sources of error that RHA methodologies seek to control and the contributions of environment models to those errors. The influence of trends in microelectronic device technology is also considered.

Galactic Cosmic Ray (GCR)↗
NASA NTRS1994

Summary of Workshop on InP: Status and Prospects

The primary objective of most of the programs in InP solar cells is the development of the most radiation hard solar cell technology. In the workshop, it was generally agreed that the goal is a cell which displays high radiation tolerance in a radiation environment equivalent to a 1 MeV electron fluence of about 10(exp 16)/sq cm. Furthermore, it is desired that the radiation response of the cell be essentially flat out to this fluence - i.e. that the power output of the cell not decrease from its beginning of life (BOL) value in this radiation environment. It was also agreed in the workshop that the manufacturability of InP solar cells needs to be improved. In particular, since InP wafers are relatively dense and brittle, alternative substrates need to be developed. Research on hetero-epitaxial InP cells grown on Si, Ge, and GaAs substrates is currently underway. The ultimate goal is to develop hetero-epitaxial InP solar cells using a cheap, strong, and lightweight substrate.

Walters, R. J.↗
NASA NTRS2003

Protosteller Disks Under the Influence of Winds and UV Radiation

Star formation and the creation of protostellar disks generally occur in a crowded environment. Nearby young stars and protostars can influence the disks of their closets neighbors by a combination of outflows and hard radiation. The central stars themselves can have a stellar wind and may produce sufficient UV and X-ray to ultimately destroy their surrounding disks. Here we describe the results of numerical simulations of the influence that an external UV source and a central star's wind can have on its circumstellar disk. The numerical method (axial symmetry assumed) is described elsewhere. We find that protostellar disks will be destroyed on a relatively short time scale (~ 10(sup 5)yr) unless they are well shielded from O-stars. Initially isotropic T-Tauri winds do not significantly influence their disks, but instead are focused toward the rotation axis by the disk wind from photoevaporation.

formation↗
NASA NTRS2012

Radiation-Tolerant DC-DC Converters

A document discusses power converters suitable for space use that meet the DSCC MIL-PRF-38534 Appendix G radiation hardness level P classification. A method for qualifying commercially produced electronic parts for DC-DC converters per the Defense Supply Center Columbus (DSCC) radiation hardened assurance requirements was developed. Development and compliance testing of standard hybrid converters suitable for space use were completed for missions with total dose radiation requirements of up to 30 kRad. This innovation provides the same overall performance as standard hybrid converters, but includes assurance of radiation- tolerant design through components and design compliance testing. This availability of design-certified radiation-tolerant converters can significantly reduce total cost and delivery time for power converters for space applications that fit the appropriate DSCC classification (30 kRad).

Skutt, Glenn↗
NASA NTRS1996

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
NASA NTRS1980

Radiation tolerance of boron doped dendritic web silicon solar cells

The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

Rohatgi, A.↗
NASA NTRS1991

Direct glass bonded high specific power silicon solar cells for space applications

A lightweight, radiation hard, high performance, ultra-thin silicon solar cell is described that incorporates light trapping and a cover glass as an integral part of the device. The manufacturing feasibility of high specific power, radiation insensitive, thin silicon solar cells was demonstrated experimentally and with a model. Ultra-thin, light trapping structures were fabricated and the light trapping demonstrated experimentally. The design uses a micro-machined, grooved back surface to increase the optical path length by a factor of 20. This silicon solar cell will be highly tolerant to radiation because the base width is less than 25 microns making it insensitive to reduction in minority carrier lifetime. Since the silicon is bonded without silicone adhesives, this solar cell will also be insensitive to UV degradation. These solar cells are designed as a form, fit, and function replacement for existing state of the art silicon solar cells with the effect of simultaneously increasing specific power, power/area, and power supply life. Using a 3-mil thick cover glass and a 0.3 g/sq cm supporting Al honeycomb, a specific power for the solar cell plus cover glass and honeycomb of 80.2 W/Kg is projected. The development of this technology can result in a revolutionary improvement in high survivability silicon solar cell products for space with the potential to displace all existing solar cell technologies for single junction space applications.

Dinetta, L. C.↗