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Results for “Radiation Tolerance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Electron microscopy data on irradiation effects in glassy carbon, nuclear graphite, pyrolytic carbon, and carbon fibers

Glassy carbon, a monoatomic allotrope of carbon, is a candidate material for components in fission nuclear power systems due to its radiation tolerance. This article presents comprehensive electron microscopy data revealing the effects of neutron and electron irradiation on glassy carbon. For comparison, additional data are provided for pyrolytic graphite and carbon fibers, materials that exhibit similar structural behavior under irradiation. In situ electron irradiation experiments further illustrate the real-time microstructural evolution of glassy carbon during exposure. The dataset is organized into five parts: (1) transmission electron microscopy (TEM) micrographs of as-received and neutron-irradiated glassy carbon; (2) TEM micrographs of neutron-irradiated graphite; (3) TEM micrographs of unirradiated and irradiated carbon–carbon composites; (4) TEM micrographs of pyrolytic carbon specimens in both conditions; (5) scanning transmission electron microscopy (STEM) micrographs of as-received and neutron-irradiated glassy carbon and (6) in situ electron irradiation data of a glassy carbon particle. These datasets provide valuable insights into radiation-induced structural changes in carbon-based materials relevant to nuclear applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Non-destructive depth-resolved characterization of residual strain fields in high electron mobility transistors using differential aperture x-ray microscopy

Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for the characterization of these concentrations is that they exist over sub-μm length-scales, precluding their characterization by more traditional residual stress measurement techniques. Here, in this study, we demonstrate the use of synchrotron x-ray-based differential aperture x-ray microscopy (DAXM) as a viable, non-destructive means to characterize these stress and strain concentrations in a depth-resolved manner. DAXM is used to map two-dimensional strain fields between the source and the drain in a gallium nitride (GaN) layer within high electron mobility transistors (HEMTs) with sub-μm spatial resolution. Strain fields at various positions in both pristine and irradiated HEMT specimens are presented in addition to a preliminary stress analysis to estimate the distribution of various stress components within the GaN layer. γ-irradiation is found to significantly reduce the lattice plane spacing in the GaN along the sample normal direction, which is attributed to radiation damage in transistor components bonded to the GaN during irradiation.

42 ENGINEERING↗
DOE OSTI2026

In situ studies on heavy ion irradiation and partial oxidation induced stacking faults and nanograins in tungsten nanolaminates

Understanding the microstructural evolution of tungsten (W) under extreme irradiation environments is critical for its application as a plasma-facing material in future fusion reactors. Heavy ion irradiation study offers expedited damage accumulation and thus allows irradiation tolerance property prediction in a short period of time. In this study we explore in situ Kr ion irradiation of W nanolaminates at 800 °C and uncover a complex interplay of irradiation-induced transformations, including the emergence of stacking faults, nanograin formation, and generation of thickened grain boundaries defined as GB regions with the thickness of up to 15 nm. High-resolution transmission electron microscopy studies reveal the formation of extended planar faults and a metastable hexagonal close-packed (hcp) phase within the body-centered cubic (bcc) matrix. These structural transitions are facilitated by irradiation-induced shear. They are further stabilized by the presence of oxygen, which promotes stacking fault formation and vacancy trapping. Elevated temperatures enhance defect mobility, enabling dynamic recrystallization into ultrafine grains and the thickening of GBs due to defect absorption and impurity segregation. These findings unravel non-equilibrium phase transformation pathways in heavy ion irradiated W and highlight the critical role of impurity-mediated defect dynamics in governing its radiation tolerance properties.

Wazeer, Adil [Purdue University]↗
DOE OSTI2025

In-situ irradiation of uranium carbide

Uranium carbide (UC) is a leading candidate fuel for Generation IV reactors due to its high uranium density and thermal conductivity. However, its irradiation performance—particularly gas bubble swelling and defect dynamics—remains poorly characterized. Using in-situ transmission electron microscopy (TEM), we irradiated UC with 300 keV Xe + and 1 MeV Kr 2+ ions at temperatures up to 900 °C to quantify swelling behavior and dislocation loop evolution. The swelling remained below 0.6 % across all temperatures, suggesting the dimensional stability of UC under irradiation at these temperatures. Dislocation loops grew faster in UC than in UO 2 or UN, correlating with its lower homologous temperature. Notably, nanograin structures emerged in thin regions of the lamellar, mirroring phenomena previously observed in UO 2 and ZrC. These results address critical knowledge gaps in the radiation tolerance of UC and provide insight into its suitability for advanced reactor systems.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Irradiation Experiments on High Efficiency Nanowire Solar Cells Including Tilted Incidence Angle

Nanowire based solar cells have promising potential to become the next generation of space solar cells. In this study we corroborate their high radiation tolerance by irradiating high efficiency GaAs (efficiency > 15 %) nanowire solar cells with 1 MeV electrons at a fluence of 10 16 e - /cm 2 . Additionally, we theoretically show that the damage in nanowire solar cells is expected to be slightly dependent on the incidence angle and the geometry of the nanowire array. However, experimentally, two sets of GaAs nanowire solar cells have been irradiated with 1 MeV electrons at normal incidence and with a 25° tilted angle exhibiting a similar degradation.

high specific power↗
DOE OSTI2021

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors Under Extraterrestrial Radiation Conditions

Silicon detection is a mature technology for registering the passage of charged particles. At the same time it continues to evolve toward increasing radiation tolerance as well as precision and adaptability. For these reasons it is likely to remain a critical element of detection of systems associated with extraterrestrial exploration. Silicon sensor leakage current and depletion voltage depend on the integrated fluence received by the sensor and on its thermal history during and after the irradiation process. For minimal assumptions on shielding and hence on the particle energy spectrum, and using published data on Martian ground temperature, we predict the leakage current density and the depletion voltage, as a function of time, of silicon sensors in transit to and deployed continuously on the Mars surface for a duration of up to 28 Earth-years, for several sensor geometries and a worst-case temperature scenario.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

In situ study on heavy ion irradiation induced microstructure evolution in single crystal Cu with nanovoids at elevated temperature

Understanding the response of nanovoids to irradiation damage advances our capability to design radiation tolerant materials. Recent in situ studies reveal the shrinkage of hexagon-shaped nanovoids in (110) textured Cu. However, the evolution of voids with irregular geometries under irradiation is less well understood. Here, in situ Kr ion irradiation was performed at 100 °C on single-crystal Cu (112) that possesses nanovoids with high aspect ratio. In situ studies show these elongated voids fragment into smaller voids and shrink gradually with increasing dose. Phase field simulations confirm that fragmentation of the void is governed by the competing kinetics between atoms diffusing toward and away from the elongated nanovoid. In conclusion, cost irradiation analysis reveals the formation of high-density defect clusters.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2025

Laser beam pointing stabilization using analog position-sensitive diodes

Laser wire scanners have been used for ion beam profile and emittance measurements at the Spallation Neutron Source linear accelerator. Due to propagation distances exceeding 100 m, reliable measurements require laser beam stabilization, previously accomplished with a feedback control loop using a digital camera as a position sensor [Hardin et al., Opt. Express 19, 2874 (2011)]. Here, this paper presents an upgraded pointing stabilization system utilizing analog position-sensitive diodes (PSDs) as the position detector, optimized with an optical diffuser. The new system significantly surpasses the previous system by offering an order-of-magnitude improvement in radiation tolerance and a bandwidth limited only by the burst repetition rate of the laser beam. Operating with a 60-Hz burst mode laser, the new system effectively suppresses laser beam drifts up to 30 Hz, compared to the previous system’s 4 Hz limit. In addition, the amplitude of spectral components below 0.1 Hz was reduced by a factor of more than 100, which is over seven times greater than was achieved by the previous system.

Data acquisition↗
DOE OSTI2023

Beam Test Results of the RADiCAL—A Radiation Hard Innovative EM Calorimeter

High-performance calorimetry conducted at future hadron colliders, such as the FCC-hh, poses a significant challenge for applying current detector technologies due to unprecedented beam luminosities and radiation fields. Solutions include developing scintillators that are capable of separating events at the sub-fifty picosecond level while also maintaining performance after extreme and constant neutron and ionizing radiation exposure. The radiation-hard innovative calorimeter (RADiCAL) is an approach that incorporates radiation tolerant materials in a sampling “shashlik”-style calorimeter configuration, using quartz capillaries filled with organic liquid or polymer-based wavelength shifters embedded in layers of tungsten plates and lutetium-yttrium oxyorthosilicate (LYSO) crystals. Here, this novel design intends to address the priority research directions (PRD) for calorimetry listed in the DOE basic research needs (BRN) workshop for high energy physics (HEP) instrumentation. Here we report preliminary results from an experimental run at the Fermilab Test Beam Facility (FTBF) in June 2022. These tests demonstrate that the RADiCAL concept is capable of ¡50 ps timing resolution.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Use of diamond sensors for a high-flux, high-rate X-ray pass-through diagnostic

X-ray free-electron lasers (XFELs) deliver pulses of coherent X-rays on the femtosecond time scale, with potentially high repetition rates. While XFELs provide high peak intensities, both the intensity and the centroid of the beam fluctuate strongly on a pulse-to-pulse basis, motivating high-rate beam diagnostics that operate over a large dynamic range. The fast drift velocity, low X-ray absorption and high radiation tolerance properties of chemical vapour deposition diamonds make these crystals a promising candidate material for developing a fast (multi-GHz) pass-through diagnostic for the next generation of XFELs. A new approach to the design of a diamond sensor signal path is presented, along with associated characterization studies performed in the XPP endstation of the LINAC Coherent Light Source (LCLS) at SLAC. Qualitative charge collection profiles (collected charge versus time) are presented and compared with those from a commercially available detector. Quantitative results on the charge collection efficiency and signal collection times are presented over a range of approximately four orders of magnitude in the generated electron–hole plasma density.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Comparative evaluation of analogue front-end designs for the CMS Inner Tracker at the High Luminosity LHC

The CMS Inner Tracker, made of silicon pixel modules, will be entirely replaced prior to the start of the High Luminosity LHC period. One of the crucial components of the new Inner Tracker system is the readout chip, being developed by the RD53 Collaboration, and in particular its analogue front-end, which receives the signal from the sensor and digitizes it. Three different analogue front-ends (Synchronous, Linear, and Differential) were designed and implemented in the RD53A demonstrator chip. A dedicated evaluation program was carried out to select the most suitable design to build a radiation tolerant pixel detector able to sustain high particle rates with high efficiency and a small fraction of spurious pixel hits. The test results showed that all three analogue front-ends presented strong points, but also limitations. The Differential front-end demonstrated very low noise, but the threshold tuning became problematic after irradiation. Moreover, a saturation in the preamplifier feedback loop affected the return of the signal to baseline and thus increased the dead time. The Synchronous front-end showed very good timing performance, but also higher noise. For the Linear front-end all of the parameters were within specification, although this design had the largest time walk. This limitation was addressed and mitigated in an improved design. The analysis of the advantages and disadvantages of the three front-ends in the context of the CMS Inner Tracker operation requirements led to the selection of the improved design Linear front-end for integration in the final CMS readout chip.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

In situ microstructural evolution in face-centered and body-centered cubic complex concentrated solid-solution alloys under heavy ion irradiation

This study characterizes the microstructural evolution of single-phase complex concentrated solid-solution alloy (CSA) compositions under heavy ion irradiation with the goal of evaluating mechanisms for CSA radiation tolerance in advanced fission systems. Three such alloys, Cr 18 Fe 27 Mn 27 Ni 28 , Cr 15 Fe 35 Mn 15 Ni 35 , and equimolar NbTaTiV, along with reference materials (pure Ni and E90 for the Cr-FeMnNi family and pure V for NbTaTiV) were irradiated at 50 K and 773 K with 1 MeV Kr ++ ions to various levels of displacements per atom (dpa) using in-situ transmission electron microscopy. Cryogenic irradiation resulted in small defect clusters and faulted dislocation loops as large as 12 nm in face-centered cubic (FCC) CSAs. With thermal diffusion suppressed at cryogenic temperatures, defect densities were lower in all CSAs than in their less compositionally complex reference materials indicating that point defect production is reduced during the displacement cascade stage. High temperature irradiation of the two FCC CSA resulted in the formation of interstitial dislocation loops which by 2 dpa grew to an average size of 27 nm in Cr 18 Fe 27 Mn 27 Ni 28 and 10 nm in Cr 15 Fe 35 Mn 15 Ni 35 . This difference in loop growth kinetics was attributed to the difference in Mn-content due to its effect on the nucleation rate by increasing vacancy mobility or reducing the stacking-fault energy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Critical cooling rates for amorphous-to-ordered complexion transitions in Cu-rich nanocrystalline alloys

Amorphous complexions in nanocrystalline metals have the potential to improve mechanical properties and radiation tolerance, as well as resistance to grain growth. In this study, the stability of amorphous complexions in binary and ternary Cu-based alloys is investigated by observing the effect of cooling rate from high temperature on the occurrence of amorphous-to-ordered complexion transitions. Bulk Cu-Zr and Cu-Zr-Hf alloy samples were annealed to induce boundary premelting and then quenched through a procedure that induces a gradient of local cooling rate through the sample height. Amorphous complexion thickness distributions were found to be invariant to local cooling rate in the Cu-Zr-Hf alloy, demonstrating enhanced stability of the amorphous complexion structure compared to the Cu-Zr alloy, which had thinner amorphous complexions in the regions that were slowly cooled. The experimental results are used to construct time-temperature-transformation diagrams for the amorphous-to-ordered complexion transition in both the binary and ternary alloys, enabling a deeper understanding of the influence of cooling rate and grain boundary chemistry on complexion transitions. In conclusion, the critical cooling rate necessary to avoid complexion transitions in the ternary alloy is found to be at least three orders of magnitude slower than that for the binary alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Fiber/matrix debonding evaluation of SiCf/SiC composites using micropillar compression technique

Third-generation silicon carbide (SiC) composites reinforced by SiC fibers (Hi-Nicalon S [HNS] and Tyranno SA3 [SA3]) are attractive for use in next generation reactors owing to their high strength and chemical inertness at high temperatures, as well as enhanced radiation tolerance under neutron irradiation environments. To optimize composite performance, the interfacial mechanical properties of chemical vapor–infiltrated (CVI) SiC f /SiC composites are investigated in this effort by using a slant interface micropillar compression testing procedure. The micropillar test specimens, containing an inclined pyrolytic carbon (PyC) interphase, are prepared using a focused ion beam. The novel microcompression testing successfully quantifies the debond shear strength and internal friction coefficient of micropillar test samples by using the Mohr-Coulomb formulation. Furthermore, according to four types of SiCf/SiC composite microcompression test results, interfacial properties and debond mechanisms are significantly affected by the PyC layer thickness, the local bonding mechanism of the PyC interphase on the SiC fiber surface, and the surface roughness of fibers. Regardless of PyC thicknesses, SA3-reinforced CVI SiC f /SiC composites are found to have much higher debond shear strengths than HNS-reinforced SiC f /SiC CVI composites. By using this micropillar compression technique alongside analytical methods, we uncover new understandings of PyC interface properties. Additionally, the micropillar test results obtained are correlated with macroscopic mechanical properties of neutron-irradiated CVI SiCf/SiC composites.

42 ENGINEERING↗
DOE OSTI2020

Oxide dispersoid coherency of a ferritic-martensitic 12Cr oxide-dispersion-strengthened alloy under self-ion irradiation

Ferritic-martensitic oxide-dispersion-strengthened (ODS) alloy has shown excellent mechanical property and high radiation tolerance. However, the stability of dispersoids during displacive irradiation in the individual ferritic and martensitic phases is unclear. In this work, the correlation among dispersoid coherency, size, density, and matrix phase are studied in dual-phase 12Cr ODS after 100 peak displacements-per-atom (dpa) irradiation at 475°C, using 3.5 MeV Fe 2+ self-ions. The size and density changes of coherent and incoherent dispersoids were analyzed as a function of irradiation depth. The average dispersoid size decreased after irradiation in both phases, and the large incoherent dispersoids in the tempered martensite phase underwent a more dramatic change than those in the ferrite phase. The dispersoid density significantly increased in the ferrite phase within the irradiated region, mostly resulting in an increase in coherent dispersoid density. On the other hand, only a small change in density was observed in the tempered martensite phase for both coherent and incoherent dispersoids. This study shows that dispersoid evolution is dramatically different in ferrite and tempered martensite phases.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Radiation induced amorphization of carbides in additively manufactured and conventional ferritic-martensitic steels: In-situ experiments on extraction replicas

In-situ irradiations using 1 MeV Kr 2+ ions in a transmission electron microscope were performed on extraction replica samples containing M 23 C 6 carbides and MX carbonitrides from two ferritic-martensitic (FM) steels: (i) 9%Cr-1%W-TaV based Eurofer97 and (ii) 9%Cr-1%Mo-VNb (all in wt.%) based additively manufactured (AM) Grade91 steel. The irradiations were performed between 100 and 773 K up to a maximum dose of ~2.4 displacements per atom (dpa). The M 23 C 6 carbides are highly susceptible to radiation induced amorphization (RIA), while the MX type nanoprecipitates are highly amorphization resistant across the entire irradiation temperature range. Between 100 and 423 K, RIA of M 23 C 6 carbides occurs very rapidly with critical amorphization doses ranging between ~0.35 and 0.9 dpa, increasing to higher doses at 573 K. Complete amorphization of the M 23 C 6 carbides up to doses of ~2.4 dpa is not possible at 773 K under the present irradiation conditions. The critical amorphization dose of M 23 C 6 carbides increases nearly exponentially with irradiation temperature. The critical temperature for the crystalline-to-amorphous phase transformation (T c→a ) of M 23 C 6 carbides irradiated as replica samples, i.e. without the surrounding metal matrix, was estimated to be ~812 K. Comparing the present results with neutron irradiation data on bulk samples reveals a decrease in the critical amorphization dose for M 23 C 6 and an increase of T c→a , highlighting the effect of dose rate on the amorphization behavior that is qualitatively consistent with literature on other non-metals. Changes in the minor chemistry of M 23 C 6 , such as presence or absence of W, V, Nb, Mo, seems to have little effect on the amorphization behavior. Here, in-situ irradiations on extraction replica samples provide a novel pathway to explore radiation tolerance of nanoprecipitates in nuclear structural materials

36 MATERIALS SCIENCE↗
DOE OSTI2023

Irradiation Effects on Stability of δ-UZr2 phase in U-50 wt% Zr Alloy

U-50wt%Zr is a candidate metallic nuclear fuel with potential application in light water reactors due to its excellent thermal properties and high radiation tolerance. The Zr-rich UZr fuels possess greater swelling resistance and fission gas release characteristics compared with U-rich UZr fuels. In this current study, the δ-phase U-50wt%Zr is proton irradiated at room temperature to 1 displacement per atom (dpa) to provide insights on phase stability under irradiation conditions. High resolution characterization of Transmission Electron Microscopy (TEM) and Atom Probe Tomography (APT) characterization techniques are used to elucidate microstructural changes due to irradiation. TEM and APT results show highly oriented bcc β-Zr-rich platelet precipitates nucleating adjacent to α-U phases inside the UZr 2 matrix. Formation of this platelet morphology is characteristic of Widmänstatten structure which can be attributed to a variety of factors such as differences in thermal expansion coefficient between the phases, grain size, alloy composition, and cooling rate. The phases present are distinctly different than those observed through in situ annealing, but irradiation accelerates diffusion and phase separation kinetics. These microstructural changes in U-50wt%Zr are different from those achieved by pure thermodynamic or high temperature heavy ion irradiation experiments. Finally, our work, together with previous ones, highlight the necessity to study the U-Zr phase diagram under non-equilibrium thermodynamics conditions to support this material's deployment as a viable nuclear fuel form.

36 MATERIALS SCIENCE↗